ae 1 (a) iste : ny (T=3e0k) = Leb -/0°(300)"" exp] ~@ebeV) 2013810 %) (Beek) = 2.50" cur? sBy ny (T=600&) = 1.66 +10" (600). ox {0.66eV) 2139 O' HM be0k) | = Atbri0'Ccmr? Com aring these results with these tn Example: hy (Ge @ 300k) 2 2315 hi (Ge@book) |. Ts hi (Si @ 300k) ni (S@ be0k) At higher temperature, the &xponential terns approaches oe, which TmplieS that np T% independent of Banelgap energy , Fy. (by For sity clped material np = nz? Assiunin at Tico k i i ie 510 cng? n= [ne(T-»06)]/p = (250% m3) = 125-10? 5-10"cm2 (0) Mobili of elections in Sp > [B50 Orns Mobittty of holes in Si = 480 on/y-s > velocity of electrons = Line =/290 un) Oly velavity of electrons AnE (1990 Fs) = (35-10% m/s velocity of holes = pe 3 2) vs mt) = 45-10? ms (b) Given E=ot Yun hole. conent neql gible Mn= 1290 Ofv-s bp = 480 CHr/ies Ter = LA Lum = 4 lune + ppE| % dlgnE eens Tee = Alun? GME (Lew NGD othe OL Yn) = £6 -10 om?3. Given L=otum fA (6 Sum) Vz LV Un? B50 Otfes lip = 480 Os nese! om (Assuming n-type depart) (a) Wi(T=200k) = 9210" "(300)" ea, 2(t eae = 108 10 Cw prreln = 1710? Cm? E=%/ = 10% oo Lap = A Stor = fa ple “fh alan ag MmJIE = (65un} (b16"C) | Dxpcie (00 bw}. Ae oo (.i)0%, vs ve (12 Yon) > In = 0.054 mAb) @ Hook © my = 3.1107 ow? enn = LAO core be 10 V/um o Lp = Ag Luan spl a) LE = (0.0 un} (615) [1 ost (loi) Maal rat . ves Ve ‘ (ie Yarn ) D Lp % 0.054 mA4 Gren Leotum = 4205 um)* Vs tv Mn> 7400 oles Mp = 1900 on'lv-s n= 10cm? (assuming n-ty Ser ng tipe agant ) (a) From previews problem, @ eck: My= 2.5610? cm p> Nit, =£3:(0'? E= (0 Yum Tor = ATor = A g Luan hp CANE = (605ua Sb) [Parador rae bai) Vs “Vs * (10 Yam) > Int © 624 mA by) @ Mook: m= 240%? pe B50 'tur? E = l0Yum Tr = Aq [aan + Mp (Za) TE = (a wo) [ cot (Wii?) + 1 400 oF (8 riod) ves V5 e - y (We Zim) > Tor = 62.4 mA5 Given Dn= 3h ow ls 2 p Jee ales | : 3 : ° | ogi]

ater electric field <—> gravitattena) fred drift [cureut —~ jwakr flowUO (9 ee eecsueesee cents ; | | Assume ST. Lets Na N i o zhidew? = 5a0low? Ph * Na = 4 10¢Cen? Np = NP = (1.08 oon) x 29-10 cw? Pp 4.(o'%cm In = No = 57(0"Un> nz 1, eB)? Py = ME = (108 10% CH) = 93.16% em? Ny S70? (b) Vo = &T ln we) ¢ ( ne @ 250k 2 Vo = 0.905 V @ 300k: Wyo 0.943 V @ 350K. Vo = 0-784V Towards higher temperatures, Yo ~ T in) That is, overall, Ve drops with higher T(lL Given No =3 10 om Ne = 080° as? ind Vo. ti} ? Toe) FOU) (33.10? %JGeok n(2 toler? ) 3 Le iotte Vo it J.08- 10°C Wt 0, 384 Va3 (2. Given Nd= 3110" om? Na = 2010" cw oe =LbV Gop = 7 AIG OTE, @) hy = (08-10% cm? Y= F to(nate) #=(26 mV) ly 310% 210% ¢ (L080!) | = 06979 V Gy = [Ge NANo +t p ra NatNo : = [upepisiolteg | foe get -t] 2 zor 20 Ve = 0149 FE/um? ad G(R) = [ie (6/ve] «Ge = 0.082 fF fee (b) Given G news | si NaNo 2 NatNy Ve ir & a asSquating both sides & Simplifying gives ay PTIG 9 ( Np c No! >) , NatN/ 4. Na Ne! : where No = ol Vo + Ve p+ Ve value. Here , there is only one variable No (neu valve.) The solution can be found iteratively by solving this equation. But we can make an assumption that lo+ Ve * Vet Va Since Ve =lév the dominant term, Then we ven fy Vo & Vo" after wards. > Np 4g Ne NatNo Na # No“ > No = ANNA @ 4(2109)310) » L00-10 cit? Na-3Ns B10) -3-(2:10) > No. / ot ad Noo 20 Veri Vo, ot = 0-699 V 2 Vor Ve & 23 V ‘hs Volnaw = 0. TOV D> hte x23V (Y) ve Increase No by 5 times.B. 2 a2 if + 3 “1G -05 Vp Ojo 22 7 OE Vo CS" 3 + be ( Ve N —®d © or®@: it'%y _ aay > b= 00365 V t+ oA, S03 Substitute Vo inte O: Gjo = 22 Os = 943 fF fu? > NAND w (6) Ve 2 NatNp | ag ‘ = (B43 fE) «(00%5v) 2 2313-10 cm? Un? qeFY a value fir Ny > Nano, ay NieNo Naz 210% ewe? 3 Np = ya Na-¥ : = (213-10 Tw N20 owt”) (2:10 = 31310) cv? © 3.11 (07 ew?(‘4 «@) Th fernard bas, Ba ImA Y= 250mV “Ig % Lew = (m4) expl- Fm V/zemv] = 29F 10" A (b) Since Ts x #rea, doubling area implies doubling Ts Frow (a), Vs her lmh=2e@ > i = Vy la Be \ =(26mY) n/m : (=) : (So 0.432 V MiTt = 4, + B. -r,(e i) Ble) = (Is, +In)(@ ‘Ye _1) Therefore the parallel combination gperates as an & ey device with an epavalent saturation current of £,+Is2 (b) By KVL, Vo, =Voe 2 \ylo by = Vr ln (fe (a) eG) ] LIyt=b,+i. > b= Tet-S, i ) =\r —- B= Te) > hb. = Tet Iz Js + I,(6 (a) 4 PE \ dW, Suppose r-T; (eo D) \ b= b(E"-) ym By KCL, b,-b, -I >(e Yer, D>(e “-1)=(@ “-1) > Vo, = Voz = 2 oe ur ret (eM) , or fm We 2M oe a series Combination can be viewed as a. Single Two-Tterminal device with exponential characteyisttes (by Suppose Vi = initial Up. Need (Ox \y 7 final Vp increase in, > (0 = 1 (e1) ie en I. (¢% -1) AV = Wye VG = Wp da (le) =(26m¥) (C0) = bo, mV.log Ts, Vb, Yoo Find : tome of of fT, & Ve lyf Ie me Vp = y+bb, = tln(Z) By kvl, We Ts2 Vr ly ( * ) mes i s: pe = No [le or se 7 ip = (By Ts, (2 B)> Wl ae Bie bp b, = Verb Ts Vay T = | {& Ti Ve Vet ( 1 $2 oP S 2. Vy Hes )18 eh be oo ee + Ve 7 Vg = Ve ly Te +n a alt tae ) 7 Ba > Ip= 2: xp 7 oo Pow Increase Te by (0 times: bnew = 10% > Vanew = Vr '» (ast ) = tr inte | Tet Toy TE, Be = ne + Ir ly loo ih = Ve tyluloo * lat 0.120v *. Ve increases by 0.020 V.{q x Vy i" R= 280 E> Fs (€%-1) * ae I=2 104 By KVL Ve = TR, + Vor LR + Ueln (4/15) = TR, + Ve ln (PAs) i This can be solved Airectly with special programs er graphing calculators But this cau be selved teratirvely , by hand Vx =0.5V Wwe Suppose that D, isn > current flaws through D,. Te ssume Q ‘one ve T > Vp = oy a feat D> Ik= Vere, = 05-04)V _ 05 mA 2 R: 2 KS Yo = Ve (By =(0 240) o (22a) = 9.62 V Is 216° <. Contradiction because Yo, -exceects Vx I This means oar assumpticn is jncorrect D>D, is off > Veh =25V =oVy = 0.8V Suppose D, ts on. (This is a reasonable assumptien Since juost chivdes turn on at around b= OT Vv.) For startup, use h=0T v \rzaTV Tx = Vey = 0.05 mA R, 3 y= It In(Yis) = 0.622 ¥ Vb = 0.022 V > Ex = (0,.8-O.b22)v = 0.089 mA 2k > Vp, =(N.026 iy (22824 ) zo.e3]y t ( In (Sera ©. Tv Vo, ~ 063TV DI = C8-268TV — 9 032 mh 2 k2 => Vp, = (n026y) [nf 0.0%2mh ) p, = (0.026V) »/ Cte a 0.635V %, = 0.635V > Ty = (88-9.99)V = 9 993 mA 2 kD > Vy, = (erty) In (2.0820 ) 0.635V 210" 2. With an accuracy of three oecimal points, Vo, * 0.635 V (of course, Mole iterations Ix ® o.082 mA. give a more acourate esul¥. )[atv] Suppose, again, thet Di is on. Use Vp, eu previous calculations as starting pon = 005Y B= (LOH = 0.18 mA 2 ke > lb, = Grab) ln( Stl 2 0.656 V 20% A Vp, = 0.65bV D Tye (1- 0656)V = 0.17 mA 2 Ki » br, = (nereen(o (TmA\ & 0.655 V 21074 fp, = O.655V D Ty = (1-2.659)V = OT mA 2 kQ D> vb, 7 655 V “ep, & 0.655 V Te 0.17 wA, Using similar assumptions as those In previews calculations , Vp, = 0655 V D> r= 02, mA > bb, * Obelv Vp 2 e6e1Y 2 q=02TmA 2 Wb, * 0.b6bVv Vp, = 666 ¥ > k=6.zTmA ® bh, % 0.beeV fe Ty 0:2] md hy, =Obbb Vfor more than 3x increase in Ix, Wy, onl Tnereases by ~ BOmV, whith 7s less Pho 1% of the turn-on voltage f the diede. In other words, once. the dicde conducts current, its voltage varies marginally (epected due to its Oxponential chayacter’stic) This also implres thet the diede , mce on, Can allow an amount of cutrent te flew threugh (whtil Vo,* Tp, becomes $0 lage that the “dicde. Simply "breaks clown")20 i> 1 Since. Is, o< Area, DB, becomes = | 7 , ne aT FEE Ve, | 3 Te = (0x (210A) (CP) ZL uppose Dr 7s on. Assume Ve,>0.T¥ Vp, 207 D> Tx = Ve-¥o = oly = 005 mA Re 2k ESE lDtai le in(B/5)= (0.026%) fw 0 (Beene) 20-10°A = 0,563 V Vp, =0.563v D> Ty = (0.§-0563)v = 0,12 mA 2 kd > Vo, = (0.026 v) In O12 mA) = 0.585 V 2010" Vp, = 0.995 V D> Ty = (8-0.585)¥ = 0.11 Wh 2k D Vp, = (0.026 u) Inf OU mA \ w& O593V 20199 Vp, = 00993V > Ty = (0$- 05) = 9.11 mA 2K Dv, = 0.593 ¥ oY, * 0.583 ¥ Ip = 0. mA[Yet2v] Siwy pose Dts on Use results fry ae wtloudations as sfarting pried: Yo, = 0.5923V > i = (1.2-053)v = 03! mA hy, =0.600V D> 2 KI 2 Vo, = (2.026v) tn( 22h \&® obioVv 20x00". Vb, = 0.610¥ D> Ty = (t2-p.bio)vy = 0.30mA 2 RD > Vb, = (ooetv) un ( o30mh = O609V : oA = (L2-06)V =< 630A “wes . Ve, Dx increasin intustivel 2 kK2 > b= 6 boiVv 0. 609 V 0.30 mA the cross-section area of Dj, this means P, can conduct Same amount of curvenT with less bb, The results hdve Shown that in this problem, Vo is less and Ik is morewu. Given: @ Ve=2V I, > Fim KO be D> Trl = 058 mA ayia Ri, é. Ts =_ 4k a Ix exp l/r] ee" -1) 2 (058 ni) op l-O¥ens] © 364-10"22. Tk Given Ye = Vr/2 : fet i& [edt Ts= 20104 lo 1 By KcL -| 92 Ase, Ye, = %, = Ye/z (kvl) "Hf no) This must be Solved rterative ly From Prperivace ; Suppose Ve = 2¥ Ven2v D> Re Ve(2z0 = (Vv = 5mh We =hagy D> Ty = bbley = 0 1 mA 2ZkQ D> Ve =2(0 ozo) (let RLATV 21684 WrlatV > i = (aly = 0.34 wA Zk > Ve = L4TV2st Gden te=tvy 2 Ee =02mA +B nd Wy=2Vv D> Te=05wA i r& Find &, and Is. By KVL, Vb, = Vx- ER, = Ve in (%) D> 1- (o.2mA)R, =(6.026V) ln (224) ——) 2 — (05mA)R, = (o.020v) bn ( Suh) @® 5 @-0: L- (03 mA) 2, oe @ o26v) Ln _ 2eR, = [Oe V a 325 ks 03m * Substitute R, inte ©: Ty = Tx: xp [ \s Z| Vr = (0.2mA) | {-leam)ossb] 529410 A O02 R, = 3.25 k2Q Ig x 294-10 AGien Ie2 3104, 24. By kek, Tee by + 5, = tei ls) +B, R, z IG Since Ik, lr, 8, and Is are Known, this cay be solved directly with speci l vograms or Graphing caleulators . However “tus Can be also solved by Weretions.: Assume a4 Vp, calculate Ip,”, and ve-iterate on Voi. Assume Vp,=97V as starting pemt. [B= fmA Vp, = 87 V2 Zp, = Ie- bes/R, = tm - OT = 030A [kK Dp, = Vein a) =(.026v) M Luh ) zz OdV 3-104 i>, = OGY SD Ty = tmh- @.Udy = 0.28 mA [k2 2 Vp, = (0.026¥) in (gets 3-10 A, jennyYo, =0.1TV D I= LmA - OTY = 0.29 mA Tk > by, =O. TT V forsee Oates Ta2mal Assume bo, 70.0TV fem prewns result. Vo, = 0.7 VD Tp, = 2mA~- BTV = .28 mA PKs > Vo, = (B.0r6v) bn (a4) a o0tebv 3-104 Vp) =0.156V D> Ip, =2mA- O.176V = 124 mA jee > Vo, = (0.026 inate a OTS5V 3610 8A Vp, = O.155V In, =2mA — 2TSEV = [24 mA [ke > Y, = O.1SGV a Ub = OEYAssume Vp, = 0.199 from previews resul Vy, = 0.195 D> Ip, = 4mA- O.255V = 225 mA [k2 > Vo, = Ooze) bn ( 32 & OT Bet Vy, = 2.78 V 2 To, = 4nd ~ 2-20K = 3.22 mA bk 3 Vp, = (0.026 i 3.22mA \ = O-Td0V Bile oe Vo, = Owe V. Note: As Ie increases, Ib, increases , while Cte) stays pelatively the ee the axponential Charactenste, the diode ence en, Will gbsord as much current as necessary te ; te satisfy kek1 Given TD, = 0.5mA whey Te=l3m, find Ts 25. J & iis by, ly. This means Io, = (x- B)R (0.38ma)/K2 = 08V iow > t= byewl Aq] =(05mA) exp [- 03 V/2026 v] LTO AGiven TR, = %/2 Te = 310° H Ke FR MD, | fird In. —o R = (72) oe This can be solved dlivectly with special pregyams er graphing caloutators Atternatively, one Can solve this Ce by hard. Assume Vp = 0.8 V Vy-0.8v 2 (Re)= bb = 08¥ = 0-8mA a 1 k2 =>\)y= hl Ha =(0.026V)[n Smif, i i ( Te) Sas in) = 9.144 Vv \Vpsomesy D> Me = OTH4V = 0.7K4 mA (ksu > Vp = (0.026v) I" (eae) x O.TA4LV 310AWrote Df = oTu2v = 0.142 yh 1 k2 > Vp = (0.0r6v) ln (at) & 0./a2/ 3-10"°R/] . Te = 2(0.142 mA) = L.48 mAZI. Given Ix tw > Vx =hev O. =2mA ~> Vx =18V k@ Vx Rite find R, and ts B= Jk - Y/R, (ket) By KVL) Vx = Ve in( 3) =Vr ly (5 te) Is Ts > ((2,v) = (0.026 ©)» {mad 208 | —O ts (Lv) = (0.026 tn Zh) ak] ® ds @-O: oOby =(6-026v) bn phate) Luh -'-2V/p DR = L207 [wel td 2.2 AR Lat exp °oore| Loh Te= Ty op Pp] = (2nA- 18) ewe x 2 429-10°%H238 Given 0D, =D2 with Ty= 51074 7 RF aka ice | De Find Ve, for Tx =2ud. Current through the diedes = = Ty - Va where Ve, = voltage acrosk, Ry This can be selved alirectly with special iia or graphing calculdters or by hav ttérativel Y tssume a Ve, , calculate Th, and s-iterate on new Ue, 2(2*¥%5,). From 2x erence, Most diodes conduct at Vox @TV. Assume Ve, = LAV Veel4v 2 Ip= Ie - le = 2wA- LAV = 1 3mh Ry 2kR > ee) $, = 2(0.26V) in( Bae) * (44 V BoAVet b4@¥ D> Ip = 2mA - 149 = 126 md 2k2 > Ve, = 2 (0.026V) (n/ 26 mh\ * (43V a) Ve = l49V 2 Ty = 2mh - C48v = 126 wd 2KR D> Ve, = 1.48 ee voltage actoss PR, = L48V24 Jy Given Tp, 20.5 mA, T, ) dD aX XL each diode | Find & By KcL, The Ke- Ik, = O5mA > Ve, =o, = 4 in(2) = 0.026 oy 2 ts 50h = OUR V vo Ry = Ve = 2%, = 200.118Y) = 287 ER TR, Ze, osm30 noi ed ds (et (a) Constant - a ie model : tee _ the extieme cases : when dte we have the fell aa 6 i This Tmplies Vx is linearly proper teal to Ik When Di is on Ve ts fired (by evi) by D, (= en). ‘This implies Hat an ao current from Tk cannct flew through Ry, which “means Dy will absorb all the currents to satisfy KVL —_— Di feverSe-hiased(by exponentia| model * Assume Is negligible t He id og When “Di is off, most of Ix flows through R,. When DB, “ts on, Vp, ce ie) follows this relationships Wo = = Wr ln( Za) = Wrlr(Be- He) Ts Ts BR D>i=Le (ViAq) a YP, = Is exp (YA,) when Dr is forward—biased (Vx > Vr) it. Vx & Vr ln(Fx4,) Vx | ae, te) wv (n(Fx) Jb, dominates Se | < > Fr >b, vd ~, (snall window) reverse-biaseeh