MTP6N60

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID

MTP6N60 600 V < 1.2 Ω 6.8 A

■ TYPICAL RDS(on) = 1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ APPLICATION ORIENTED
3
CHARACTERIZATION 2
1

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING TO-220
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VD S Drain-source Voltage (V GS = 0) 600 V
V DG R Drain- gate Voltage (R GS = 20 kΩ) 600 V
V GS Gate-source Voltage ± 20 V
o
ID Drain Current (continuous) at T c = 25 C 6.8 A
ID Drain Current (continuous) at T c = 100 oC 4.2 A
ID M(•) Drain Current (pulsed) 30 A
o
P tot Total Dissipation at Tc = 25 C 125 W
Derating Factor 1 W/o C
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
(•) Pulse width limited by safe operating area

November 1996 1/9

MTP6N60

THERMAL DATA
o
R thj-cas e Thermal Resistance Junction-case Max 1 C/W
o
Rthj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
Rthj- amb Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

IA R Avalanche Current, Repetitive or Not-Repetitive 6.8 A
(pulse width limited by T j max, δ < 1%)
E AS Single Pulse Avalanche Energy 460 mJ
(starting T j = 25 o C, ID = I AR, VD D = 25 V)
E AR Repetitive Avalanche Energy 21 mJ
(pulse width limited by T j max, δ < 1%)
IA R Avalanche Current, Repetitive or Not-Repetitive 4.2 A
(T c = 100 o C, pulse width limited by T j max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V( BR)DSS Drain-source I D = 250 µA VG S = 0 600 V
Breakdown Voltage
I DS S Zero Gate Voltage V DS = Max Rating 25 µA
Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 oC 250 µA
IG SS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (V D S = 0)

ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V G S(th) Gate Threshold Voltage V DS = V GS ID = 1 mA 2 3.1 4.5 V
R DS( on) Static Drain-source On V GS = 10V ID = 3 A 1 1.2 Ω
Resistance
I D( on) On State Drain Current V DS > ID( on) x RD S(on) max 6.8 A
V GS = 10 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward V DS > ID( on) x RD S(on) max ID = 3 A 2 4.8 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VG S = 0 1150 1500 pF
C oss Output Capacitance 160 240 pF
C rss Reverse Transfer 75 110 pF
Capacitance

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 MTP6N60

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 300 V I D = 3 A 50 65 ns
tr Rise Time R G = 50 Ω VGS = 10 V 140 175 ns
(see test circuit, figure 3)
(di/dt) on Turn-on Current Slope V DD = 480 V I D = 6 A 240 A/µs
R G = 50 Ω VGS = 10 V
(see test circuit, figure 5)
Qg Total Gate Charge V DD = 480 V ID = 6 A V GS = 10 V 78 98 nC
Q gs Gate-Source Charge 8 nC
Q gd Gate-Drain Charge 41 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t r(Vof f) Off-voltage Rise Time V DD = 480 V I D = 6 A 100 125 ns
tf Fall Time R G = 50 Ω VGS = 10 V 27 34 ns
tc Cross-over Time (see test circuit, figure 5) 145 180 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IS D Source-drain Current 3.8 A
I SDM(•) Source-drain Current 24 A
(pulsed)
V S D (∗) Forward On Voltage I SD = 6 A V GS = 0 2 V
t rr Reverse Recovery I SD = 6 A di/dt = 100 A/µs 750 ns
Time V DD = 100 V T j = 150 o C
Q rr Reverse Recovery (see test circuit, figure 5) 13.5 µC
Charge
I RRM Reverse Recovery 38 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Area Thermal Impedance

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MTP6N60

Derating Curve Output Characteristics

Transfer Characteristics Transconductance

Static Drain-source On Resistance Gate Charge vs Gate-source Voltage

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 MTP6N60

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Turn-off Drain-source Voltage Slope Cross-over Time

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MTP6N60

Switching Safe Operating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

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 MTP6N60

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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MTP6N60

ISOWATT220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3

L6

L7
F1

Ø
G1

G
H

F2

1 2 3

L2 L4
P011G

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 MTP6N60

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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.

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