Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
August 2014

FGA40N65SMD
650 V, 40 A Field Stop IGBT
Features General Description
Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series of
Positive Temperature Co-efficient for Easy Parallel Operating field stop 2nd generation IGBTs offer the optimum performance
High Current Capability for solar inverter, UPS, welder, induction heating, telecom, ESS
and PFC applications where low conduction and switching
Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
losses are essential.
Fast Switching : EOFF = 6.5 uJ/A
Tighten Parameter Distribution
RoHS Compliant

Applications
Solar Inverter, UPS, Welder, PFC, Induction Heating
Telecom, ESS

TO-3PN
G CE E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 650 V
Gate to Emitter Voltage 20 V
VGES
Transient Gate to Emitter Voltage 30 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current 120 A
o
Diode Forward Current @ TC = 25 C 40 A
IF
Diode Forward Current @ TC = 100oC 20 A
IFM (1) Pulsed Diode Maximum Forward Current 120 A
Maximum Power Dissipation @ TC = 25oC 349 W
PD
Maximum Power Dissipation @ TC = 100oC 174 W
o
TJ Operating Junction Temperature -55 to +175 C
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8 from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 C/W
oC/W
RJC(Diode) Thermal Resistance, Junction to Case - 1.5
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGA40N65SMD FGA40N65SMD TO-3PN Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 650 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.6 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 3.5 4.5 6.0 V
IC = 40 A, VGE = 15 V - 1.9 2.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
- 2.1 - V
TC = 175oC

Dynamic Characteristics
Cies Input Capacitance - 1880 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 180 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 50 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 12 16 ns
tr Rise Time - 20 28 ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 92 120 ns
tf Fall Time RG = 6 , VGE = 15 V, - 13 17 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 0.82 1.23 mJ
Eoff Turn-Off Switching Loss - 0.26 0.34 mJ
Ets Total Switching Loss - 1.08 1.57 mJ
td(on) Turn-On Delay Time - 15 - ns
tr Rise Time - 22 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 116 - ns
tf Fall Time RG = 6 , VGE = 15 V, - 16 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 1.08 - mJ
Eoff Turn-Off Switching Loss - 0.60 - mJ
Ets Total Switching Loss - 1.68 - mJ

2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

Qg Total Gate Charge - 119 180 nC
VCE = 400 V, IC = 40 A,
Qge Gate to Emitter Charge - 13 20 nC
VGE = 15 V
Qgc Gate to Collector Charge - 58 90 nC

Electrical Characteristics of the Diode TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 2.1 2.6
VFM Diode Forward Voltage IF = 20 A V
TC = 175oC - 1.7 -
Erec Reverse Recovery Energy TC = 175oC - 96 - uJ
TC = 25oC - 42 -
trr Diode Reverse Recovery Time IF =20 A, ns
diF/dt = 200 A/s TC = 175oC - 200 -
TC = 25oC - 3.6 -
Irr Diode Peak Reverse Recovery Current A
TC = 175oC - 8.0 -
TC = 25oC - 76 -
Qrr Diode Reverse Recovery Charge nC
TC = 175oC - 800 -

2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o 20V 12V o 20V 12V
TC = 25 C TC = 175 C
15V 15V 10V
100 10V 100
Collector Current, IC [A]

Collector Current, IC [A]

80 80

60 60

VGE = 8V VGE = 8V
40 40

20 20

0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level
120 3.0
Common Emitter
Common Emitter
Collector-Emitter Voltage, VCE [V]

VGE = 15V
VGE = 15V
100 80A
o
TC = 25 C 2.5
Collector Current, IC [A]

o
TC = 175 C
80

2.0
60
40A
40
1.5

20 IC = 20A

1.0
0 25 50 75 100 125 150 175
0 1 2 3 4 o
Collector-Emitter Voltage, VCE [V] Case Temperature, TC [ C]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 175 C
o
Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

40A
80A 80A
4 4
40A
IC = 20A

IC = 20A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

4000 15
Common Emitter
Common Emitter o
VGE = 0V, f = 1MHz TC = 25 C
400V

Gate-Emitter Voltage, VGE [V]

TC = 25 C
o 12
3000 VCC = 200V
Capacitance [pF]

300V
9
Cies
2000
6

1000 Coes
3

Cres

0 0
0.1 1 10 30 0 40 80 120
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance
100 1000

tr
td(off)
Switching Time [ns]
Switching Time [ns]

100
td(on)
10 tf

Common Emitter
10 Common Emitter
VCC = 400V, VGE = 15V
VCC = 400V, VGE = 15V
IC = 40A
IC = 40A
o
TC = 25 C o
TC = 25 C
o
TC = 175 C o
TC = 175 C
1 1
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [] Gate Resistance, RG []

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
5 1000
Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
o
Eon TC = 175 C
Switching Loss [mJ]

Switching Time [ns]

100 tr
1
Eoff

Common Emitter
VCC = 400V, VGE = 15V 10 td(on)
IC = 40A
o
TC = 25 C
o
TC = 175 C
0.1 1
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]

2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
1000 6
Common Emitter
VGE = 15V, RG = 6
Eon
o
TC = 25 C
td(off) o
TC = 175 C

Switching Loss [mJ]

Switching Time [ns]

100
Eoff
1
tf

10 Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
o
TC = 175 C
1 0.1
20 30 40 50 60 70 80 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics
250 300
Square Wave
o 100 10s
TJ <= 175 C, D = 0.5, VCE = 400V
200 VGE = 15/0V, RG = 6 100s
Collector Current, [A]

Collector Current, Ic [A]

10 1 ms
10ms
150 DC
o
TC = 75 C
1
100

o
TC = 100 C *Notes:
0.1 o
50 1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0 0.01
1k 10k 100k 1M 1 10 100 1000
Switching Frequency, f[Hz] Collector-Emitter Voltage, VCE [V]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

200 12
o
TC = 25 C
100
Reverse Recovery Current, Irr [A]

10 o
TC = 175 C
o
Forward Current, IF [A]

TC = 175 C
8
o
TC = 125 C

TC = 75 C
o 6
di/dt =100A/uS
10 di/dt = 200A/uS
o
TC = 175 C 4
o
TC = 125 C
o 2
TC = 75 C
o
TC = 25 C o
TC = 25 C
1 0
0 1 2 3 4 0 10 20 30 40
Forward Voltage, VF [V] Forward Current, IF [A]

2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

300 1200
o o
TC = 25 C TC = 25 C

Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

o
250 TC = 175 C 1000 TC = 175 C
o

200 800

150 600
di/dt = 100A/s
di/dt = 200A/s
100 400 di/dt = 100A/s
di/dt = 200A/s

50 200

0 0
0 10 20 30 40 0 10 20 30 40
Forward Current, IF [A] Forwad Current, IF [A]

Figure 21.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5

0.1 0.2
0.1
0.05
0.02
0.01 single pulse
0.01 PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
-5 -4 -3 -2 -1 0
10 10 10 10 10 10
Rectangular Pulse Duration [sec]

Figure 22.Transient Thermal Impedance of Diode

3
Thermal Response [Zthjc]

1
0.5

0.2
0.1
0.1 0.05
PDM
0.02
t1
0.01 t2
single pulse Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
Mechanical Dimensions

Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003

2011 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGA40N65SMD Rev. C5
 FGA40N65SMD 650 V, 40 A Field Stop IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower F-PFS *
Awinda FRFET tm

AX-CAP * Global Power ResourceSM PowerTrench
TinyBoost
BitSiC GreenBridge PowerXS
TinyBuck
Build it Now Green FPS Programmable Active Droop
TinyCalc
CorePLUS Green FPS e-Series QFET
TinyLogic
CorePOWER Gmax QS
TINYOPTO
CROSSVOLT GTO Quiet Series
TinyPower
CTL IntelliMAX RapidConfigure
TinyPWM
Current Transfer Logic ISOPLANAR TinyWire
DEUXPEED Marking Small Speakers Sound Louder
TranSiC
Dual Cool and Better Saving our world, 1mW/W/kW at a time
TriFault Detect
EcoSPARK MegaBuck SignalWise
TRUECURRENT*
EfficentMax MICROCOUPLER SmartMax
SerDes
ESBC MicroFET SMART START
MicroPak Solutions for Your Success
MicroPak2 SPM
Fairchild MillerDrive STEALTH UHC
Fairchild Semiconductor MotionMax SuperFET Ultra FRFET
FACT Quiet Series MotionGrid SuperSOT-3 UniFET

FACT MTi SuperSOT-6 VCX
MTx SuperSOT-8 VisualMax
FAST
FastvCore MVN SupreMOS VoltagePlus

FETBench mWSaver SyncFET XS
FPS OptoHiT Sync-Lock Xsens

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I71
2011 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FGA40N65SMD Rev. C5
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer
application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 8002829855 Toll Free ON Semiconductor Website: www.onsemi.com
USA/Canada
Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 421 33 790 2910
Japan Customer Focus Center For additional information, please contact your local
Phone: 81358171050 Sales Representative

Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com

1
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Fairchild Semiconductor:
FGA40N65SMD