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Caracterstica
Smbolo Unidad Ge Si GaAs
(300K)
tomos/
Densidad atmica N0 4.421022 51022 2.211022
cm3
Brecha de energa de la
banda prohibida
Eg eV 0.67 1.107 1.43
Fuentes :
R.S. Muller and T.I. Kamins. Device Electronics for Integrated Circuits (second
edition). John Wiley & Sons. Singapore 1986.
S.M. Sze. Semiconductor Devices. Physics and Technology (2nd edition). John Wiley &
Sons. 2002