TIP31, TIP31A, TIP31B, TIP31C,

(NPN), TIP32, TIP32A, TIP32B,

TIP32C, (PNP)

Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching http://onsemi.com
applications.
Features 3 AMPERE
CollectorEmitter Saturation Voltage POWER TRANSISTORS
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc COMPLEMENTARY SILICON
CollectorEmitter Sustaining Voltage
406080100 VOLTS,
VCEO(sus) = 40 Vdc (Min) TIP31, TIP32
= 60 Vdc (Min) TIP31A, TIP32A 40 WATTS
= 80 Vdc (Min) TIP31B, TIP32B
= 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product MARKING
fT = 3.0 MHz (Min) @ IC = 500 mAdc DIAGRAM

Compact TO220 AB Package 4

PbFree Packages are Available*

MAXIMUM RATINGS TO220AB
Rating Symbol Value Unit CASE 221A TIP3xxG

STYLE 1 AYWW
Collector Emitter Voltage TIP31, TIP32 VCEO 40 Vdc

1
TIP31A, TIP32A 60 2
3

TIP31B, TIP32B 80
TIP31C, TIP32C 100

CollectorBase Voltage TIP31, TIP32 VCB 40 Vdc

TIP31A, TIP32A 60
TIP31B, TIP32B 80 TIP3xx = Device Code

TIP31C, TIP32C 100 xx = 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,

EmitterBase Voltage VEB 5.0 Vdc
A = Assembly Location
Collector Current Continuous IC 3.0 Adc Y = Year

Peak 5.0 WW = Work Week

Base Current IB 1.0 Adc G PbFree Package

Total Power Dissipation PD
@ TC = 25_C 40

W
Derate above 25_C 0.32 ORDERING INFORMATION
W/_C

See detailed ordering and shipping information in the package
Total Power Dissipation PD dimensions section on page 2 of this data sheet.

@ TA = 25_C 2.0 W
Derate above 25_C 0.016 W/_C

Unclamped Inductive Load Energy (Note 1) E 32 mJ

Operating and Storage Junction TJ, Tstg 65 to _C

Temperature Range + 150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

September, 2005 Rev. 10 TIP31A/D
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoAmbient RqJA 62.5 _C/W

Thermal Resistance, JunctiontoCase RqJC 3.125 _C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2) TIP31, TIP32 VCEO(sus) 40 Vdc
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A 60

TIP31B, TIP32B 80

TIP31C, TIP32C 100
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO 0.3 mAdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C 0.3

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)



TIP31, TIP32
TIP31A, TIP32A
ICES
200
mAdc

200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B 200

(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C 200

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50

CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat) 1.2 Vdc

BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION
Device Package Shipping
TIP31 TO220 50 Units / Rail
TIP31G TO220 50 Units / Rail
(PbFree)
TIP31A TO220 50 Units / Rail
TIP31AG TO220 50 Units / Rail
(PbFree)
TIP31B TO220 50 Units / Rail
TIP31BG TO220 50 Units / Rail
(PbFree)
TIP31C TO220 50 Units / Rail
TIP31CG TO220 50 Units / Rail
(PbFree)
TIP32 TO220 50 Units / Rail
TIP32G TO220 50 Units / Rail
(PbFree)
TIP32A TO220 50 Units / Rail
TIP32AG TO220 50 Units / Rail
(PbFree)
TIP32B TO220 50 Units / Rail
TIP32BG TO220 50 Units / Rail
(PbFree)
TIP32C TO220 50 Units / Rail
TIP32CG TO220 50 Units / Rail
(PbFree)

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

TC TA
40 4.0

PD, POWER DISSIPATION (WATTS)

TC
30 3.0

20 2.0

TA
10 1.0

0 0
0 20 40 60 80 100 120 140 160

T, TEMPERATURE (C)

Figure 1. Power Derating

TURNON PULSE VCC

APPROX 2.0
RC IC/IB = 10
+11 V
1.0 TJ = 25C
Vin SCOPE 0.7
Vin 0 tr @ VCC = 30 V
RB 0.5
VEB(off)
t, TIME (ms)

t1
0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 7.0 ns 4.0 V
0.1
100 < t2 < 500 ms
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05
0.03
t2 DUTY CYCLE 2.0%
0.02
TURNOFF PULSE APPROX 9.0 V 0.03 0.05 0.1 0.3 0.5 1.0 3.0

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Equivalent Circuit Figure 3. TurnOn Time

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZqJC(t) = r(t) RqJC
0.07
RqJC(t) = 3.125C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

a transistor: average junction temperature and second
5.0
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC VCE

100ms
5.0ms limits of the transistor that must be observed for reliable
2.0 operation; i.e., the transistor must not be subjected to greater
1.0ms dissipation than the curves indicate.
1.0 SECONDARY BREAKDOWN
The data of Figure 5 is based on T J(pk) = 150_C; TC is
LIMITED @ TJ 150C
THERMAL LIMIT @ TC = 25C variable depending on conditions. Second breakdown pulse
0.5
(SINGLE PULSE) limits are valid for duty cycles to 10% provided T J(pk)
BONDING WIRE LIMIT v 150_C. T J(pk) may be calculated from the data in
0.2 CURVES APPLY TIP31A, TIP32A Figure 4. At high case temperatures, thermal limitations will
BELOW RATED VCEO TIP31B, TIP32B
TIP31C, TIP32C
reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 50 100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0 300
2.0 IB1 = IB2
TJ = +25C
ts IC/IB = 10
ts = ts 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25C
CAPACITANCE (pF)

0.7
0.5
t, TIME (s)

0.3 tf @ VCC = 10 V 100

Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. TurnOff Time Figure 7. Capacitance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500 2.0

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

300 TJ = 150C VCE = 2.0 V TJ = 25C
1.6
hFE , DC CURRENT GAIN

25C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 55 C
50

30 0.8

0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 +2.5

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C +2.0 *APPLIES FOR IC/IB hFE/2
1.2
+1.5 TJ = 65C TO +150C
1.0
V, VOLTAGE (VOLTS)

+1.0

0.8 +0.5 *qVC FOR VCE(sat)

VBE(sat) @ IC/IB = 10 0
0.6 0.5
VBE @ VCE = 2.0 V
0.4 1.0
1.5 qVB FOR VBE
0.2 VCE(sat) @ IC/IB = 10
2.0
0 2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT (A)

106

TJ = 150C
101
IC ICES
105
100 100C

104 IC = 2 x ICES
101 REVERSE FORWARD

102 25C 103 (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
ICES
103 102
0.4 0.3 0.2 0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 20 40 60 80 100 120 140 160
VBE, BASEEMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

PACKAGE DIMENSIONS

TO220
CASE 221A09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
T PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
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6