Ordering number : ENA1149 2SC6144

www.DataSheet4U.com

SANYO Semiconductors
DATA SHEET

2SC6144 NPN Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Applications
Relay drivers, lamp drivers, motor drivers.

Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 10 A
Collector Current (Pulse) ICP 13 A
Base Current IB 2 A
2 W
Collector Dissipation PC
Tc=25C 25 W
Junction Temperature Tj 150 C
Storage Temperature Tstg --55 to +150 C

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

32608FA TI IM TC-00001285 No. A1149-1/4

 2SC6144
www.DataSheet4U.com
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0A 10 A
Emitter Cutoff Current IEBO VEB=4V, IC=0A 10 A
DC Current Gain hFE VCE=2V, IC=270mA 200 560
Gain-Bandwidth Product fT VCE=10V, IC=3A 330 MHz
Output Capacitance Cob VCB=10V, f=1MHz 60 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=300mA 180 360 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=6A, IB=300mA 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=100A, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= 50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100A, IC=0A 5 V
Turn-ON Time ton See specified Test Circuit. 62 ns
Storage Time tstg See specified Test Circuit. 350 ns
Fall Time tf See specified Test Circuit. 25 ns

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7508-002
IB1
PW=20s
OUTPUT
10.0 4.5 D.C.1% IB2
3.2 2.8
INPUT VR RB
3.5

RL
7.2

50 + +
16.0

100F 470F
18.1

1.6 VBE= --5V VCC=20V

5.6

1.2
IC=20IB1= --20IB2=5A
14.0

0.75 0.7

1 2 3
1 : Base
2.4

2 : Collector
3 : Emitter

2.55 2.55
SANYO : TO-220ML

IC -- VCE IC -- VCE
10 5.0
35mA
A

40mA 35mA

A
mA

18m A 14mA
mA

mA 30mA
100m

60 40mA
25

9 4.5
16m 12mA
80

8
25mA 4.0
Collector Current, IC -- A
Collector Current, IC -- A

10mA
20mA A
7
45mA
3.5 2 0m
6 3.0 8mA
A
50mA 15mA 30m
5 2.5
6mA
4 10mA 2.0
4m A
3 1.5

2
5m A 1.0 2m A
1 0.5

0
IB=0mA 0
IB=0mA
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0
Collector-to-Emitter Voltage, VCE -- V IT13454 Collector-to-Emitter Voltage, VCE -- V IT13455

No. A1149-2/4
 2SC6144
www.DataSheet4U.com IC -- VBE hFE -- IC
25 7
VCE=2V VCE=2V
5

20 Ta=75C
Collector Current, IC -- A

DC Current Gain, hFE

25C
15 2
--25C

10 100

C
7
C

C --25
5
= 75
5
Ta

25
0 3
0 0.5 1.0 1.5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Base-to-Emitter Voltage, VBE -- V IT13456 Collector Current, IC -- A IT13457
hFE -- IC fT -- IC
5 7
Ta=25C VCE=10V
5

Gain-Bandwidth Product, fT -- MHz

3 3
V CE
DC Current Gain, hFE

0. 2
2 2V
=2.
0.5

0V
V

100
0.7V

7
100
5
1.0V

7
3
5
2

3 10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT13458 Collector Current, IC -- A IT13459
Cob -- VCB VCE(sat) -- IC
5 1.0
f=1MHz IC / IB=20
7
5
Saturation Voltage, VCE(sat) -- V

3
Output Capacitance, Cob -- pF

3
2
2

0.1
Collector-to-Emitter

100 7
5 C
7 =75
C

3 Ta
25
C

5
5

2
--2

3 0.01
7
2 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Collector-to-Base Voltage, VCB -- V IT13460 Collector Current, IC -- A IT13461
VCE(sat) -- IC VBE(sat) -- IC
1.0 3
IC / IB=50 IC / IB=20
7
Saturation Voltage, VCE(sat) -- V

2
Saturation Voltage, VBE(sat) -- V

2
1.0
Collector-to-Emitter

0.1 Ta= --25C

7
Base-to-Emitter

7
C C 25C
5 5
5
a =7 --2 5 75C
T
3
C
25
2 3

0.01 2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC -- A IT13462 Collector Current, IC -- A IT13463

No. A1149-3/4
 2SC6144
www.DataSheet4U.com Forward Bias A S O PC -- Ta
3 2.5
2 ICP=13A
10
7 IC=10A 10

1m

Collector Dissipation, PC -- W
2.0
0m

PT
5
Collector Current, IC -- A

s
s

=5
3

00
DC
2

10

s
ms
1.5

op
1.0 No

era
7 he

tio
5 at

n
sin
3 k
1.0
2
0.1
7
5 0.5
3
2 Tc=25C
0.01
Single pulse 0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT13464 Ambient Temperature, Ta -- C IT13452
PC -- Tc
30

25
Collector Dissipation, PC -- W

20

15

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C IT13453

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third partys
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.

This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.

PS No. A1149-4/4