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JFET 1
Abstractunipolar devices are called those JFETs can have an n-type or p-type channel. In the
semiconductor devices that base their driving mechanism n-type, if the voltage applied to the gate is less than
almost exclusively on a single type of load carrier. In this
article we will study the unipolar device called JFET Junction that applied to the source, the current will be
FET (Field Effect Transistor), their features and different reduced (similarly in the p-type, if the voltage
applications. applied to the gate is greater than that applied to the
source).
Keywords Drain, Gate, Junction, Source,
Semiconductor, Transistor. A JFET has a large input impedance (sometimes on
the order of 1010 ohms), which means that it has a
negligible effect on external components or circuits
connected to its gate.
I. INTRODUCTION
Fsica de Semiconductores
UNIVERSIDAD NACIONAL ABIERTA Y A DISTANCIA UNAD. Gonzalez Duque. JFET 2
The characteristics curves example shown above The characteristics curves for a P-channel junction
shows the four different regions of operation for a field effect transistor are the same as those above,
JFET and these are given as (see Fig. 2.) except that the Drain current ID decreases with an
Fsica de Semiconductores
UNIVERSIDAD NACIONAL ABIERTA Y A DISTANCIA UNAD. Gonzalez Duque. JFET 3
In the Common Source configuration (similar to This type of FET configuration can be used in high
common emitter), the input is applied to the Gate frequency circuits or in impedance matching
and its output is taken from the Drain as shown. circuits were a low input impedance needs to be
This is the most common mode of operation of the matched to a high output impedance. The output is
FET due to its high input impedance and good in-phase with the input.
voltage amplification and as such Common Source
amplifiers are widely used.
Fsica de Semiconductores
UNIVERSIDAD NACIONAL ABIERTA Y A DISTANCIA UNAD. Gonzalez Duque. JFET 4
Fsica de Semiconductores
UNIVERSIDAD NACIONAL ABIERTA Y A DISTANCIA UNAD. Gonzalez Duque. JFET 5
Fsica de Semiconductores