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:2: E & TE

PAPER REVIEW

Except a few out of scope questions from EDC, remaining questions in the paper can be
easily attempted. Particular in this paper selection of questions plays a vital role in securing
a good score. For example Section-A is relatively tougher than Section-B, so choosing 3
questions from Section-B will fetch you a big advantage.

SUBJECT WISE REVIEW

SUBJECT(S) LEVEL MARKS

Basic Electronics Hard 75

Network Theory Easy 77

Basic Electrical Engineering Moderate 89

Electronic Measurements & Instrumentation Moderate 74

Analog Electronics & Digital Electronics Easy 94

Materials Science Hard 71

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:3: CONVENTIONAL PAPER - 1

SECTION-A

01. (a) In a long semiconductor bar (EG = 2 eV), conduction band electrons come in from the left
in the positive x-direction with a kinetic energy of 3 eV. They move from location A to B to
C to D. Between A and B, the electric field is zero; between locations B and C, there is a
linearly varying voltage increase of 4 V; between C and D, the field is again zero. Assuming
no scattering, sketch a simplified band diagram describing the motions of these electrons.
Assuming that these electrons can be described as plane waves, with a free-electron mass,
write down the wave function of the electrons at location D. Leave your result in terms of
an arbitrary normalization constant. Assume the mass of free electron to be 9.11 1031 kg.

(12 M)
01. (a)
Sol: Given, band-gap = 2eV
Energy of electron, E = 3eV
Zero electric field from A to B and C to D
Voltage between B and C = 4V
m0 = 9.111031 kg

Band diagram:

A B
2eV 4eV
D

V0 = +4V
W = V0q = 4eV

Time-independent Schrodingers wave equation is given by


2 ( x ) 2m
2 E V( x ) ( x ) 0
x 2 h

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:4: E & TE

V(x)

V0

Region-I Region-II

x
0
Figure: Potential function

The general solution to this can be written as:


1 ( x ) A1e jk1x B1e jk1x (x 0)

2mE
Where k1
h2
and
2 ( x ) A 2 e k 2x B2 e k 2x (x 0)

2m(V0 E)
Where k 2
h2

01. (b) Calculate the Fermi energy EFO at 0K for copper and estimate the average speed of the
conduction electrons in Cu. The density of Cu is 8.96 gm/cm3 and atomic weight is 63.5.
Given Avogadros number is 6 1023. (12 M)

01. (b)
Sol: Fermi-energy is the maximum energy occupied by electron at 0ok
The conduction electron population for a metal is calculated by multiplying the density of
conduction electron states (E) and Fermi function, f(E).
dn
( E ) . f ( E )
dE
8 2m3 / 2 1
E ( E E F ) kT
h 3
e 1

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:5: CONVENTIONAL PAPER - 1

8 2m 3 / 2 2 3 2
n EF
h3 3
23
h 2 3 2 3
E F n
8m

Every atom of Cu contributes one electron


A 0d
n = Atomic concentration ; Where A0 is Avogadros no.
A
= 8.46 1022 cm3 d is density, A is atomic weight
EF = 7.026 eV
12
6E
Average speed of conduction electrons in Cu is v e F 0
5m e
We get Ve = 1.2 106 m/s

01. (c) In the common source amplifier shown, evaluate voltage gain Av, given RD = 2.7 k, = 50
and rds = 25 k. Derive the expression used. (12 M)

+
VDD
RD
+

+
vi v0
RG RS CS

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:6: E & TE

01. (c)
Sol: Given circuit is

VDD

RD
+

+
+
Vi V0
RG
RS CS

RD = 2.7 k
= 50
rds = 25k
We know = gm rds
50 = gm 25k
gm = 2 mA/V

Small signal equivalent circuit is

G + +
Vi rds RD V0
RG Vgs
gmVgs 25k

V0 = gm Vgs (rds ||RD)


V0 = gm Vi (rds||RD)
V0 r R D 50 R D
A V g m ds 4.90V / V
Vi rds R D rds R D

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:7: CONVENTIONAL PAPER - 1

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:8: E & TE

01. (d) Define lumen and candela. The wavelength of visible light ranges from violet at
approximately 380 nm to red at 720 nm. Obtain the bandwidth available of visible light.
(12 M)
01. (d)
Sol: Lumen:
It is measure of total quantity of visible light emitted by source
It is S.1 unit of Luminous flux

Candela:
It is measure of Luminous power per unit solid angle emitted by a point light source in a
particular direction
It is S.1 unit of Luminous Intensity

1 lumen = 1 candela Sr

Frequency of violet spectrum is given by


3 108
f1
38 10 8
3 1016

38
0.7895 1015 Hz
789.5 THz

Frequency of red spectrum is given by


3 108
f2
72 10 8
3 1016

72
0.4167 1015 Hz
416.7 THz

Band width of visible light = f1 f2


= 372.8 THz
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:9: CONVENTIONAL PAPER - 1

01. (e) Implement the following expression using NAND gates only:
Y a c a b c (12 M)
01. (e)
Sol: Y = (a + c) (a b c )

= (a + c) abc
a (abc) c(abc) a
b y
a (abc) c(abc) c

a (abc) . c(abc)

02. (a) For the MOSFET characteristic shown in the figure, calculate:
(i) Linear VT and KN
(ii) Saturation VT and KN
(iii) The gate oxide thickness and substrate doping.
cm 2
Assume channel mobility = 500
Vs
VFB = 0, Z = 100 m, L = 2 m
Where Z is the depth of the channel and L is the length of the channel. (25 M)

ID(mA)

2.0
VG= 5V

1.0 VG= 4V

VG= 3V

0 1 2 3 4 5
VD(V)

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: 10 : E & TE

02. (b) (i) What is compensated doping?


(ii) An n-type semiconductor containing 1016 phosphorus (donor) atoms/cm3 has been
doped with 1017 boron (acceptor) atoms/cm3.Calculate the electron and hole
concentrations in the semiconductor. (15 M)
02. (b) (i)
Sol: Compensated doping:
Compensated doping is a term used to describe the doping of a semiconductor with both donors
and acceptors to control the properties. For example, a p-type semiconductor doped with NA
acceptors can be converted to a n-type semiconductor by simply adding donors until the
concentration ND exceeds NA.
The effect of donors compensates for the effect of acceptors and vice-versa
The electron concentration is then given by NDNA provided the latter is larger than NA. What
essentially happens is that electrons from donors recombine with the holes from the acceptors so
that the mass action law np n i2 is obeyed

02. (b) (ii)


Sol: ND = 1016 atoms/cm3
NA = 1017 atoms/cm3

Since more acceptors are added into donor atoms it becomes p-type compensated semiconductor

So the resultant hole concentration = NA ND [ valid when NA ND >> 2ni ]


= 1017 1016
= 9 1016 atoms/cm3

n i2
Now electron concentration =
hole concentration

n i2
atoms / cm3
9 1016

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: 11 : CONVENTIONAL PAPER - 1

02. (c) Define Fan-in and Fan-out with an example. Draw the circuit diagram of an NMOS circuit
to realize f (a, b, c) = a b ac. (20 M)
02. (c)
Sol: Fan-In: The maximum number of inputs connected to the logic gate is called fan-in
Ex:

Here fan-in = k
In generally Gates with large fan-in are slower than gates with small fan-in

Fan-Out: fanout is the maximum number of logic gates that can be driven by a logic gate output
by maintaining the output levels without affecting the logic gate performance.
(or)
Fan-out of a gate specifies no of standard loads that can be connected to the output of
the gate without degrading its normal operation.

Ex:

(o/p= high) (o/p= low)


IOH IOL
IIH IIL

n gates IIL n gates

(a) High-level output (b) low level output


I OH I OL
n fanout H n fanout L
I IH I IL

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: 12 : E & TE

f (a , b, c) a b ac

a b ac

a b ac

(a b). ac
VDD
VDD
RD
RD f
a

c
VDD
VDD
RD
RD

a
b

03. (a) (i) Consider the ac equivalent circuit of a MOSFET Colpitts oscillator.

C2 C1

L
Derive the expression for oscillation frequency. Also find the condition on the gain to
initiate the oscillations spontaneously.

(ii) As per the Barkhausen criterion, the positive feedback exists a particular frequency
range and the resulting feedback signal reinforces the error signal. Explain the
phenomenon which limits the amplitude of the oscillations under steady state.
(20 M)
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: 13 : CONVENTIONAL PAPER - 1

03. (a) (i)


Sol: Given circuit

C2 C1

Equivalent circuit is

L sC2 vgs

sC2 vgs G
+ VD
C2 vgs gmvgs C1
R

1
VD sL sC 2 v gs
sC 2

VD s 2 LC2 1v gs ......1

Apply KCL at drain terminal


VD
VDsC1 g m v gs sc 2 v gs 0
R
1
v gs sC1 s 2 LC2 1 g m v gs sC 2 v gs 0
R
sC1R 1 s 2 LC 1 g sC 0
R 2 m 2

s 3LC1C2R+ s C1R+ s 2LC2+1+gmR+ s C2R= 0

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: 14 : E & TE

Make imaginary part of the above equation is equal to zero


3 LC1C2R + LC1R+ C2 = 0
[RC1+RC22LC1C2R] = 0
R C1 C 2 2 LC1C 2 0

C1 C 2

LC1C 2

1 CC
C eq 1 2
LCeq C1 C 2

Condition for the gain to initiate the oscillations


1 2LC2+gmR = 0
1+gmR = 2LC2
C1 C 2
1 gmR LC2
LC1C 2
C2
1 gmR 1
C1
C2
gmR
C1

03. (a) (ii)


Sol: +
A1 V0
Vi
+

V0
A1 2 10
Vi

Conditions for sustained oscillations as per Backhouses criterion


(i) |A| = 1
(ii) A = 1+2 = 0

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: 15 : CONVENTIONAL PAPER - 1

Amplitude stabilization:
Given that the circuit is in positive feed back (|A|>1) for the given frequency range of
operation. In order to generate and sustain oscillations the gain control mechanism is as follows
first to ensure that oscillations will start, initial design is such that A is slightly greater than
unity. This corresponds to designing the circuit so that the poles are in the right half of the
splane. Thus as the power supply is turned on oscillations will grow in amplitude. When the
amplitude reaches the desired level, the non linear network comes into action and causes the loop
gain to be reduced to exactly unity. In other words, the poles will be pulled back to j axis.
This action will cause the circuit to sustain. oscillations at this desired amplitude.
A>1 [gain adjustment] A=1
X X


X X

initially Generation of oscillations Sustained oscillations

sustained
Generation

A>1 A=1

Amplitude Stabilization:
Vz+ 0.7 V
Slope = A2

V0
Slope A1
0 Vf

(Vz+ 0.7V)
Slope A2

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: 16 : E & TE

RB

R1
RF

+

+ C +
C C
Vf Vo
R R R

To have amplitude stabilization in the oscillator, it is necessary to limit the output voltage by
introducing nonlinearity. Stability can be achieved by adding two zener diodes in series with
resistance RB.
As long as the magnitude of the voltage V0 across Rf is less than the Vz + 0.7V, the gain of the
RF
Amplifier A1
R1
If V0 increases more than Vz + 0.7, then zener diodes are ON
R F || R B
A2 V0
R1
A
Zener
ON

Zener
OFF A

V0

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: 17 : CONVENTIONAL PAPER - 1

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: 18 : E & TE

03. (b) A typical 1 MHz quartz crystal has the following properties:
fs = 1 MHz, fa = 1.0025 MHz
Co = 5 pF, R = 20
The two frequencies fs and fa are called the series and parallel resonant frequencies. In the
equivalent circuit, C0 is parallel with LCR.
What are C and L in the equivalent circuit of the crystal?
What is the quality factor Q of the crystal? (20 M)
03. (b)
Sol: Quartz crystal equivalent circuit

Co

Rs Ls Cs

Given,
fs = 1MHz
fa = 1.0025MHz
C0 = 5pF
Rs = 20

Cs
fa fs 1
C0

f
2
1.0025 10 6
2

C s C 0 a 1 5 10 12 1
1 10
6
f s

= 25.03125 1015F
1
fs
2 L s C s

1 1
Ls
2fs 2
Cs 2 110 25 10
6 2 15

1.013211H

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: 19 : CONVENTIONAL PAPER - 1

Quality factor
2f s L s
Q
Rs

2 106 1.013211

20
318309.8862

03. (c) What is a multiplexer? Write the symbol and truth table of a 4-1 multiplexer. Implement
the same using logic gates. (20 M)
03. (c)
Sol: (c)
Multiplexer: It is a combinational circuit that selects one of several inputs and forwards it to
output. In general a n 1 MUX has n inputs and log2n selection lines. It is also called as Data
selector
Symbol of 4 1 MUX:

I0
I1 output
41
I2
I3

s1 s0

Truth table:
S1 S0 Output
0 0 I0
0 1 I1
1 0 I2
1 1 I3

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: 20 : E & TE

S0

S1

I0

output
I1

I2

I3

04. (a) Consider a CMOS inverter biased at VDD = 5V with transistor parameters of KN= KP and
VTN = VTP 1 V. Then consider another CMOS inverter biased at VDD = 10 V with the
same transistor parameters. Determine the critical voltages on the voltage transfer curve of
the CMOS inverter. (20 M)
04. (a)
Sol:
V0
VDD Slope= 1

Vin Vout Slope = 1

VIL VI
VIH
Voltage transfer characteristics

VIL: By definition, VIL is the smaller of the two input voltage at which the slope of the VTC
dVout
becomes equal to (1), i.e., 1 . In this case nMOS transistor is in saturation while the
dVin
pMOS transistor is in linear mode. From IDn = IDp we obtain:

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: 21 : CONVENTIONAL PAPER - 1

kn
2
k

VGSn VTn 2 p 2VGSn VTn VDSp VDSp
2
2

Note that VGSn = Vin, VDSn = Vout, VGSp= (VDD Vin), and VDSp = (VDD Vout)

Substituting these values in above equation


kn
2
k

Vin VTn 2 p 2Vin VDD VTp Vout VDD Vout VDD 2 (1)
2

dVout
To satisfy 1 , we differentiate both sides of (1)
dVin

dV dV
k n Vin VTn k p Vin VDD VTp out Vout VDD Vout VDD out
dVin dVin
dVout
Substituting Vin = VIL and 1 into, we obtain
dVin

k n (VIL VTn ) k p 2Vout VIL v Tp VDD

Then VIL as a function of Vout can be expressed as:


2Vout VTp VDD k R VTn
VIL (2)
1 kR
where
kn
kR
kp

kn
Case-i:For VDD = 5V, VTN = VTP 1V, k R 1
kp

Substituting values into (2) produces

2V0 1 5 1
VIL
11
VIL = V0 2.5 (3)
From (1) and (3)
kn
2
k

V0 2.5 12 p 2V0 2.5 5 1V0 5 V0 52
2

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: 22 : E & TE

V0 3.52 2V0 6.5V0 5 V0 52



V02 (3.5) 2 7V0 2 V02 11.5V0 32.5 V02 25 10V0

V02 (3.5) 2 7V0 2V02 23V0 65 V02 25 10V0


6V0 = 40 (3.5)2 = 40 12.25
27.75
V0 4.625V
6
VIL = V0 2.5 = 2.125V
kn
Case-ii: For VDD = 10V, VTN = VTP = 1V, k R 1
kp

Substituting values into (2) produces


2V0 1 10 1
VIL
2
VIL = V0 5 (3)
From (1) and (3)
kn
2
k

V0 5 12 p 2V0 5 10 1V0 10 V0 102
2

V0 62 2V0 14V0 10 V0 102

V02 36 12V0 2 V02 24V0 140 V02 100 20V0
V02 36 12V0 2V02 48V0 280 V02 100 20V0
16V0 = 180 36
V0 = 9V
VIL = V0 5 = 9 5
= 4V

VIH: In this point nMOS is in linear mode and pMOS in saturation. Similarly to VIL we apply
KCL to the output node:
kn
2

2VGSn VTn VDSn VDSn
2 k
2

p VGSp VTp
2

Again, using VGSn = Vin, VDSn = Vout, VGSp= (VDD Vin), and VDSp = (VDD Vout)

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: 23 : CONVENTIONAL PAPER - 1

By substituting these values


kn
2

2Vin VTn Vout Vout
2 k
2

p Vin VDD VTp (4)
2

Differentiating both sides with respect to Vin


dV dV
k n Vin VTn out Vout Vout out k p Vin VDD VTp
dVin dVin
dVout
Substituting Vin = VIH and 1 in above equation, we obtain
dVin

k n (VIH VTn 2Vout ) k p VIH VDD VTp

Then VIH as a function of Vout can be expressed as:


VDD v Tp k R (2Vout VTn )
VIH (5)
1 kR

kn
Case-i:For VDD = 5V, VTN = VTP = 1V, k R 1
kp

Substituting values into equation(5) produces

5 1 2V0 1
VIL = V0 + 2.5 (6)
2

From (4) and (6)


2V0 2.5 1(V0 ) V02 V0 2.5 5 1
2

2(V0 1.5)(V0 ) V02 V0 1.5


2

2V02 3V0 V02 V02 3V0 2.25


6V0 = 2.25
V0 = 0.375
VIH = V0 + 2.5 = 2.875 V
kp
Case-ii: For VDD = 10V, VTN = VTP = 1V, k R 1
kn

10 1 2V0 1
VIH = 5 + V0 (7)
2
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: 24 : E & TE

From (4) and (7)


2V0 5 1(V0 ) V02 V0 5 10 1
2

2(V02 4V0 ) V02 V0 4


2

2V02 8V0 V02 V02 16 8V0


16V0 = 16
V0 = 1V
VIH = V0 + 5 = 6V

Critical voltages: For VDD = 5V VIL = 2.125V, VIH = 2.875V


For VDD = 10V VIL = 4V, VIH = 6V

1
04. (b) If is defined as the mean probability per unit time that an electron scattered, show that

the mean time between collisions is . (15 M)
04. (b)
Sol: Consider an infinitesimally small interval dt at time t. Let N be the number of unscattered
1
electrons at time t. The probability of scattering during dt is dt, and the no. of scattered

1 1
electrons during dt is N dt . The change dN in N is thus dN N dt

The negative sign indicates a reduction in N because, as electrons becomes scattered, N


decreases. Integrating this equation, we can find N at any time t, given that at time t = 0, N0 is the
total number of unscattered electrons.
N N 0 e t

This equation represents the no. of unscattered electrons at time t. It reflects an exponential
decay law for the no. of unscattered electrons the mean free time t can be calculated from the
mathematical definition of t

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: 25 : CONVENTIONAL PAPER - 1

t N dt
t 0


N dt
0

Where we have used N N 0 e t

Clearly, (1/) is the mean probability of scattering per unit time

04. (c) (i) The transistor circuit shown has = 100, VBE(ACTIVE)= 0.7 V. Find the operating
point (VCE, IC) and the mode of operation when S1, S2, are closed and S1, S2, are open.

S1

IC
470k 1k
IB +
10V

1k
S2

(10 M)

(ii) Find the diode current ID in the circuit shown below when the diode has cut-in voltage,
V = 0.7 and forward resistance, Rf = 25 (15 M)

100 ID
+ 100
100
10V

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: 26 : E & TE

04. (c) (i)


Sol: Given data is =100
VBE (active) = 0.7V

S1

IC
470k 1k
IB +
10V

1k
S2

When S1,S2 are open

10V
IC
1k

470k
1k

Transistor is in cutoff mode so IC = 0


VCE = 10V 10V
IC
Operating point (VCE,IC) = (10,0)
470k 1k

IB
When S1&S2 are closed 0.7V

1k

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: 27 : CONVENTIONAL PAPER - 1

Let us consider transistor is in active region


10V
IC
470k 1k
IB
+
0.7V

10 0.7
IB 19.7A
470k
IC = IB = 1.977mA
VE = 0V
VC =10 1k(IC) = 8.03V
VCE > 0.2 Transistor is in active region
Operation point (VCE,IC) = (8.03V,1.97mA)

04. (c) (ii)


Sol: Given circuit is

100 ID
+ 100
10V 100

After applying thevenins equivalent at 100

50 ID

5V 100

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: 28 : E & TE

Given Rf = 25
V =0.7V

50 ID + 0.7
25
+
100
5V

5 0.7
ID 24.57mA
175

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: 29 : CONVENTIONAL PAPER - 1

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: 30 : E & TE

SECTION-B

05. (a) Find the Thevenin resistance for the circuit shown below by zeroing the sources. Then,
find the short-circuit current and the Thevenin equivalent circuit.

5
20V + 20 2A

(12M)

05. (a)
Sol: Finding Rth:

20

Rth = 5//20 = 4

Finding Isc:
5 0V

20V +
20 2A Isc

0 20 0 0
2 I sc 0
5 20
4 2 + Isc = 0
Isc = 6A

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: 31 : CONVENTIONAL PAPER - 1

Finding VOC:
5 VOC
+
20V +
20 2A VOC

VOC 20 VOC
20
5 20
4VOC 80 + VOC 40 = 0
5VOC = 120
VOC = 24V

OR

VOC = ISCRth
= 64
= 24V

24V +

05. (b) A voltmeter and an ammeter are to be used to determine the power dissipated in a resistor.
Both the instruments are guaranteed to be accurate within 1% at full-scale deflection.
If the voltmeter reads 80 V on its 150 V range and the ammeter reads 70 mA on its 100 mA
range, Determine the limiting error for the power calculation. (12 M)
05. (b)
Sol: Given data:
Both voltmeter and ammeter accurate within 1% of fsd.
Voltmeter reads 80 V on 150 V range

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: 32 : E & TE

Ammeter reads 70 mA on 100 mA range


1
For voltmeter error = 150 1.5V
100
1.5
Relative error for voltmeter = 100 1.875 %
80
1
For ammeter error = 100 mA 1mA
100
1
Relative error for ammeter = 100 1.43%
70
% limiting error in power measurement % P = %V + %I = 1.875 % + 1.43 % = 3.305 %
Power = 8070 mA = 5.6 W
3.305
Limiting Error = 5.6 0.18W
100
Power = 5.6 0.18 W

05. (c) The following measurements pertain to a two-port circuit operating in the sinusoidal steady
state. With port 2 open, a voltage equal to 150 cos 4000t V is applied to port 1. The current
into port 1 is 25 cos (4000t-45) A, and the port 2 voltage is 100 cos (4000t+15) V. With
port 2 short-circuited, a voltage equal to 30 cos 4000t V is applied to port1. The current
into port 1 is 1.5 cos(4000t+30) A, and the current into port 2 is 0.25cos(4000t+150)A.
Find the parameters that can describe the sinusoidal steady-state behaviour of the circuit.
(12M)
05. (c)
Sol:
25450 I2=0
+
15000 +
N/W 100150

V1 = AV2 BI2
I1= CV2 DI2

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: 33 : CONVENTIONAL PAPER - 1

V1 1500 0
I2 = 0 A 1.5 150
V2 100150

I1 25 450 1
C 600
V2 10015 0
4
Now
1.5300

3000 +
N/W 0.251500

V1 300 0
V2 = 0 B 12030 0
I2 0.25150 0

I1 1.530 0
D 660 0
I2 0.25150 0

The parameters that can describe the sinusoidal steady state behaviour are
A B 1.5 150 12030 0
C D
0.25 60 660 0
0

05. (d) For the circuit shown in the figure, find the branch currents I1,I2 and I3 using Mesh
analysis. I1 I2 (12 M)
6

5 I3
15V + 10 4

+ 10V

05. (d)
Sol: 5 I1 6 I2
+ +
I3
15V +
+ +
10 4
+

+ 10V

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: 34 : E & TE

I3 = I1 I2
15 5I1 10(I1I2) 10 = 0
15I1 10I2 = 5
3I1 2I2 = 1 --------(1)
6I2 + 4I2 10 +10(I2I1) = 0
2I2 I1= 1 -------(2)

from (1) & (2)


I1 = 1A
I2 = 1A
I3 = I1 I2
= 11
I3 = 0A

05. (e) (i) Briefly discuss only the basic principles of a Thermistor and Thermocouple.
(ii) Explain why a semiconductor has a negative resistance coefficient.
(12 M)
05. (e) (i)
Sol: Thermistors are essential semiconductor devices that behave as resistors with high negative
temperature coefficient and are atleast 10 times as sensitive as the platinum resistance
thermometer. Thermisters can detect very small changes in temperature which could not be
observed with an RTD or a thermocouple. Sensitivity of thermister is higher than both RTD and
thermocouple. Sensitivity of thermistor is higher than both RTD and thermocouple. Thermistors
exhibits a highly nonlinear characteristic of resistance versus temperature.

The approximate relationship between resistance and temperature applying to most thermistors is
1 1

T1 T0
R1 = R 0 e

= thermistor constant in Kelvin


R1, R0 Resistance at absolute temperature T1 and T0 .
Thermistors widely involve in temperature measurement in range of 60oC to 15oC.

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: 35 : CONVENTIONAL PAPER - 1

The response time of thermistors can vary from a fraction of second to minutes depending on
the size of the detecting mass and thermal capacity of the thermistor.
Thermocouples consists of two dissimilar metal wires A and B insulated from each other but
welded or brazed together at their ends forming two junctions.
Metal A
Hot Cold
T1 T2
Metal B
Thermo junctions
If two wires of different metals are joined together at each form a complete circuit in which
current flows if two junctions are kept at two different temperature called seeback effect.
The relation between the thermo emf setup and temperature difference of hot and cold junction
is given by
E = (T T0) + ( T 2 T02 )

E = Thermoelectric emf (Volts)


T = Absolute temperature of hot junction
T0 = Absolute temperature of cold junction
, - Constants depends upon the metals used.

05. (e)(ii)
Sol: Conductivity in a semiconductor is given by
i n i n p

n i [Let = n + p]

Let ni is intrinsic carrier concentration, be the mobility of intrinsic semiconductor


as temperature increases
ni increases
decreases

But here dominant factor is ni [ ni > ]

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: 36 : E & TE

Conductivity of intrinsic semiconductor increases and hence its resistivity decreases there by
resistance decreases from this we can say that intrinsic semiconductor has negative resistance
coefficient

T ni i R

R
Temperature coefficient Ve
T

06. (a) (i) Use source transformations to aid in solving for the currents i1 and i2 shown in the
circuit below. i1 5
(15 M)
i2
+
20V 1A
10

06. (a) (i)


Sol: Applying source transformation to current source and resistance in parallel
i1 5 10

20V +

+
10V

20 10 2
i1 A
15 3

Applying source transformation to voltage source and resistance in series

i2
4A 5 10 1A

5 5
i2 4 1 A
5 10 3
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: 37 : CONVENTIONAL PAPER - 1

06. (a) (ii) Find the phasor voltage and the phasor current through each element in the circuit
shown in the figure. (10 M)

iC iL iR
+
5 cos (200t) v 100F 1H 100

06. (a) (ii)


Sol:
iC iL iR
5cos200t C L 100

Y(Admittance)

1 j
Y jC
R L
1 j j

100 50 200
1 3j

100 200
2 3j

200
I = Y.V

V
I 5 cos 200t
Y

2 3j
200
1000
cos 200 t 56.30
13

cos200t 56.30
V 10
iR
R 13

iL
V
jL

5

cos 200t 146.30
13

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: 38 : E & TE

i C V( jC)
1000

j 200 10 4 cos 200t 56.30
13

cos200t 56.30
20 j

13


20

cos 200t 33.7 0
13

06. (b) Find the equivalent resistance and capacitance that causes a Wien bridge to null with the
following component values: (15 M)
R1 = 3.1 k , R3 = 25k, R4 = 100k
C1 = 5.2 F and f = 2.5 kHz
06. (b)
Sol: b
I1
C2
R2 R4
I1
a G
I2 c

R1 R3
C1 I2
d

E

Wiens bridge is used to determine the frequency at a AC source and also used in many
applications like capacitance having series resistance at balance.
R2 j
R 3 R 1 R 4
1 j C R
2 2 C1

R 3 R1 C2 1
i.e., j C1R 2
R 4 R 2 C1 C 2 R 1

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: 39 : CONVENTIONAL PAPER - 1

Equating the real and imaginary parts,


R 3 R1 C2

R 4 R 2 C1

and
1

R 1 R 2 C1 C 2

1
f
2 R 1R 2C1C 2

1
6.25 106
4 (3.110 ) (5.2 10 6 ) R 2C 2
2 3

1
R 2C2
4 (3.1 10 ) (5.2 10 6 ) 6.25 106
2 3

= 0.251106 ------- (1)


C2 R 3 R1
--------- (2)
C1 R 4 R 2

Using equation (1) & (2)


C2 is 20 pF
R2 = 12.5 k

06. (c) (i) The voltage source Vg drives the circuit shown in the figure. The response signal is the
voltage across the capacitor, V0. Calculate the numerical expression for the transfer
function. (10 M)

1000
+
250 1F
+
Vg V0
50mH

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: 40 : E & TE

06. (c) (i)


Sol: Voltage gain transfer function is given by

R1
+
R2
Vg +
1/cs V0
sL

1
R 2 SL // CS
V0 (s) Vg (s)
R SL // 1
R1
2
CS


V0 (s) Vg (s)
SL R 2

R 1LCS (R 1R 2 C L)S R 1 R 2
2

Now substitute the given values


where,
R1 = 1000
R2= 250
L = 50mH
C = 1F
then the voltage gain T.F is
V0 (s) 250 (0.05 s)


Vg (s) 5 10 5 s 2 0.3s 1250

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: 41 : CONVENTIONAL PAPER - 1

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: 42 : E & TE

06. (c) (ii) Write down the incidence matrix and cut-set matrices for the network shown below.
(10 M)
5 5
4

10V

4 4

5
06. (c) (ii)
Sol: Writing graph for given network
C

6
1 2
D
4 5

A B
3
Incident matrix given by
1 2 3 4 5 6
A
1 0 1 1 0 0
B
0 1 1 0 1 0
C
1 1 0 0 0 1
D0 0 0 1 1 1


Now writing tree for given graph and identifying basic cut sets

C3
C

6
1 2

4 5

A B
3

C1 C2
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: 43 : CONVENTIONAL PAPER - 1

Now writing down cutest matrix


1 2 3 4 5 6
C1
1 0 1 1 0 0
C2 0 1 1 0 1 0

C3 1 1 0 0 0 1

07. (a) A certain 5-hp three-phase induction motor operates from a 440-V-rms (line-to-line) three-
phase source and draws a line current of 6.8 A rms at a power factor of 78 percent lagging
under rated full load conditions. The full load speed is 1150 rpm. Under no-load conditions,
the speed is 1195 rpm, and the line current is 1.2 A rms at power factor of 30 percent
lagging. Find the power loss and efficiency with full load, the input power with no load, and
the speed regulation. (20 M)
07. (a)
Sol: Given
VLL = 440V
If1 = 6.8A
cosf1= 0.78lag
Nf1 = 1150 rpm
I0 = 1.2A
cos0= 0.3lag
N0 = 1195 rpm

Power rating of machine = 5hp


Pf10 = 5735 = 3675W

Power output at full load (P0) = 3675W


Power input at full load Pin = 3VL I f1 cos f1

Pin = 3 440 6.8 0.78


Pin = 4042.19W

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: 44 : E & TE

At full load:
Power loss Ploss = Pin P0
= 4042.19 3675
PLoss = 367.19W
Power output
efficiency =
Power input

3675

4042.19
= 90.91%

Input power at no load is


Pin O 3VL I O cos 0

= 3 440 1.2 0.3


Pin O = 274.36W

No load speed full load speed


speed regulation
full load speed
1195 1150

1150

speed regulation = 3.9%

07. (b) (i) Explain the operation of a Voltage-to Frequency Converter. Given the primary
advantages and limitations of voltage-to-frequency converters.

(ii) The relationship between the input voltage vi and the output frequency f for the VCO is
given as vi = f/50.
If 530 pulses are passed by the AND gate during 0.1 sec gating pulse, what is the
amplitude of vi? (20 M)

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: 45 : CONVENTIONAL PAPER - 1

07. (b) (i)


Sol: In voltage to frequency converter the analog input is applied to an integrator.

C
R Comparator Counter
R
Digital
Output
Pulse
Generator
Pulse trigger output

Output of integrator
Zero Level
Trigger Level

Time between
two threshold levels

The integrator produces a ramp signal whose slope is proportional to the input voltage signal
level. When this ramp signal reaches a present threshold level, a trigger pulse is produced. Also
a current pulse is produced which discharges the capacitor of the integrator, after which a new
ramp is initiated.

The time between successive threshold level crossings is inversely proportional to the slope of
the ramp.

Since the slope of the ramp is proportional to the input analog voltage, hence the frequency pf
output pulses from the comparator is directly proportional to the input voltage.
Advantages:
(1) V to F converters integrate noise and so are useful under circumstances similar to dual
slope units
(2) V to F are precise, accurate, simple, inexpensive, low powered and mostly run for a wide
range of supply voltages
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: 46 : E & TE

Limitations:
(1) Due to changeover switch there is integrator transient problem.
(2) The switch isnt closed for long time as there will be residual potential on the integrator and
the time to integrate to threshold will be reduced.
(3) It relatively slow.

07. (b) (ii)


f
Sol: Vi =
50
530 pulses 0.1 sec
5300 pulses 1 sec
f = 5300
f 5300 530
Vi = = 106V
50 50 5
Vi = 106 V

07. (c) For the circuit shown in the figure below, let vc (0) = 15V
(i) Find vc,vx and ix for t > 0. (10 M)
8
ix
+
5 + 12 vx
0.1F
vc

07. (c) (i)


Sol: Vc(s) 8
Ix(s)
5
+
15/s
+
12 Vx(s)
10/s

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: 47 : CONVENTIONAL PAPER - 1

15
Vc (s)
Vc (s) s Vc (s) 0

5 10 / s 20
1 s 1 3
Vc (s)
5 10 20 2
4 2s 1 3
Vc (s)
20 2
30 15
Vc (s)
2s 5 s 5
2
5
t
v c ( t ) 15e 2
; t>0

Vx(s) = Ix(s).12
Vc (s)
12
20
15 12

5 20
s
2
9

5
s
2
5
t
v x ( t ) 9e 2
; t>0

Vc (s)
I x (s)
20
15 1

20 s 5
2
5
3 t
i x ( t ) e 2 ; t >0
4

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: 48 : E & TE

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: 49 : CONVENTIONAL PAPER - 1

07. (c) (ii) Compute V1 and V2 in the circuit shown below.


(10 M)
10450V
+

V1 4 V2

300A j3 j6 12

07. (c) (ii)


Sol: Using super node analysis
V1 V2 V2
30 0 -------(1)
3 j 6 j 12
V1 V2 = 10450
V1 V V
j 2 ( j) 2 30 0
3 6 12
(4 j)V1 V2 (2 j) V2 360 0

V1 (4 j) V2 (1 2 j) 360 0
4 j(V1 ) 4 j(V2 ) 401350

V2 (2 j 1) 360 401350
0

360 0 401350
V2
1 2 j
= 31.487.180
V1 = V2+10450
= 25.7870.470

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: 50 : E & TE

08. (a) (i) Two coils are wound on a toroidal core as illustrated in the figure below. The reluctance
of the core is 107 (ampere-turns)/Wb.
Determine the self-inductances and mutual inductance of the coils. Assume that the flux
is confined to the core so that all of the flux links both the coils. (10 M)

i1 i2
+ +
e1 e2

N1 = 100 N2 = 200

08. (a) (i)


Sol: Given reluctance of core c = 107 AT/wb
N1 = 100
N2 = 200
N12
Self inductance of coil 1 L1

L1
100
2

10 7
10 4
L1
107
L1 = 103H
N 22
Self conductance of coil 2 L 2

L2
200
2

L2
2002

L2 = 4103H
Since the flux is confined only to core coefficient of coupling K = 1
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: 51 : CONVENTIONAL PAPER - 1

Mutual inductance M = K L1L 2

M = 1 10 3 4 10 3
M = 2103H

08. (a) (ii) Consider the source, transformer and load shown in the figure below. Determine the
rms values of the currents and voltages, (case-1) with the switch open and (case-2) with
the switch closed. (10 M)

N1:N2 I2
I1
+ +
+
110 Vrms V1 10
V2
50 Hz

N1
5
N2
08. (a) (ii)
Sol: Case I: switch open

N1:N2 I2
I1
+ +
+
110 Vrms V1 10
V2
50 Hz

N1
5
N2
Assuming zero voltage drop V1= 110V
When secondary is open
I2 = 0A
From current transformation formula
I1 N 2 1

I 2 N1 5
I1 = 0A
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: 52 : E & TE

V1 N1
but (Voltage transformation)
V2 N 2

110
5
V2
V2 = 22V
V1= 110V I1 = 0A
V2 = 22V I2= 0A

Case II: When switch is closed:


N1:N2 I2
I1
+ +
+
110 Vrms V1 10
V2
50 Hz

N1
5
N2

Assuming negligible voltage drop


V1= 110V
From voltage transformation
V1 N1

V2 N 2

N2 1
V2 110V 110
N1 5
V2= 22V

From secondary side we can say that


V2 = I2RL = I2(10)
22 = I2(10)
I2= 2.2A

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: 53 : CONVENTIONAL PAPER - 1

From current transformation


I1 N 2 1

I 2 N1 5

1
I1 I 2
5
2.2
I1
5
I1= 0.44A
V1= 110V I1= 0.44A
V2= 22V I2= 2.2A

08. (b) (i) Describe sampling oscilloscope and storage oscilloscope in brief.
(ii) If, in the figure given below, the distance Y1 is 1.8 cm and Y2 is 2.3 cm, what is the
phase angle using the X-Y mode of oscilloscope?
(15 M)

Y1 Y2

08. (b) (i)


Sol: A sampling oscilloscope generally used to test fast varying signals. The advantage of a
sampling oscilloscope is that it can measure very high speed events, which require sweep speeds
of the order of 10 psec per division and amplifier bandwidths of 15 GHz.
While the disadvantage of a sampling oscilloscope is that it can only make measurements on
repetitive wave form signals, continuous display for frequencies in the range of 50 300 MHz.
The sampling oscilloscope is able to respond and store rapid bits of information and present
them in a continuous display. However it should be understood that sampling techniques cannot
be used for the display of transient waveforms.
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: 54 : E & TE

The horizontal deflection of the electron beam is obtained by application of a staircase waveform
to X deflection plates

Input Waveform

Sampling Plates

Stair case time base waveform

Figure: Sampling Oscilloscope

A digital oscilloscope digitises the input signal, so that all subsequent signals are digital.
A conventional CRT is used and storage occurs in electronic digital memory.
Vertical
Input Amplifier Digitiser Memory Analyser Waveform Plates
Signal Circuitry Reconstruction

CRT
Trigger Time Horizontal
Clock Base Amplifier Horizontal Plates

Figure: Block diagram of basic DSO

The input signal is digitised and stored in memory in digital form as shown in block diagram. In
this state it is capable of being analysed to produce a variety of different information. To view
the display on the CRT the data from memory is reconstructed in analog form.
Digitising occurs by taking a sample of the input waveform at periodic intervals. In order to
ensure that no information is lost, sampling theory states that the sampling rate must be atleast
twice as fast as the highest frequencies in the input signal. To full fill this requirement we
require digitiser which is flash A/D converter which is fastest in conversion rate many different
input channels are used with DSO. However if all these channels share a common store, through
a multiplexer then the memory available to each channel is reduced.
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: 55 : CONVENTIONAL PAPER - 1

08. (b) (ii)


Y Y
= sin 1 1 = sin 1
1.8
Sol: Phase angle = sin 1 int = 51.5
o

Ymax Y2 2.3
But as direction of movement of Lissagious figure not given phase angle may be two possible
cases
1.8 o 1.8 1 1.8 o
1 = sin 1 = 51.5 or 2 = sin 1 = 360 sin = 308.5
2.3 2.3 2.3

08. (c) For the S-domain circuit shown in the figure, find:
(i) the transfer function H(s) = V0/V1,
(ii) the impulse response,
(iii) the response when vi(t) = u(t) V, and
(iv) the response when vi(t) = 8 cos 2t V. (25 M)
1 a S

+
Vi +
1 1 V0

b
08. (c)
Sol:
(i) 1 Va S
a
+
Vi +
1 1 V0

Va Vi Va V
a 0 -------(1)
1 1 s 1
1
V0 Va ------(2)
s 1

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: 56 : E & TE

Va
(1) 2Va Vi+ 0
s 1
1
Va 2 Vi
s 1
Va s 1

Vi 2s 3

V0 1
(2)
Va s 1

V0 V0 Va 1 s 1

Vi Va V1 s 1 2s 3

V0 1

Vi 2s 3

V0 1 / 2
(ii)
Vi s 3
2
3
1 2t
h(t) e ;t0
2

1
(iii) Vi(t) = u(t) Vi (s)
s
1

1/ 2 2 1 1 1
V0 (s) Vi (s)
3 3 3 s s 3
s s s
2 2 2

V0 ( t )
1
3

1 e 3 t / 2 u ( t )

(iv) When Vi(t) = 8cos2t


1
H( j)
3 2 j

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: 57 : CONVENTIONAL PAPER - 1

When input is sine, output is also sine for LTI system


1
Magnitude of output = 8 at =2
9 4 2

8

5
2
Angle of output = Tan 1
3 2

4
Tan
3
= 53.130

So, output = 1.6cos(2t53.130)

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: 58 : E & TE

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