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PAPER REVIEW
Except a few out of scope questions from EDC, remaining questions in the paper can be
easily attempted. Particular in this paper selection of questions plays a vital role in securing
a good score. For example Section-A is relatively tougher than Section-B, so choosing 3
questions from Section-B will fetch you a big advantage.
Subject Experts,
ACE Engineering Academy
SECTION-A
01. (a) In a long semiconductor bar (EG = 2 eV), conduction band electrons come in from the left
in the positive x-direction with a kinetic energy of 3 eV. They move from location A to B to
C to D. Between A and B, the electric field is zero; between locations B and C, there is a
linearly varying voltage increase of 4 V; between C and D, the field is again zero. Assuming
no scattering, sketch a simplified band diagram describing the motions of these electrons.
Assuming that these electrons can be described as plane waves, with a free-electron mass,
write down the wave function of the electrons at location D. Leave your result in terms of
an arbitrary normalization constant. Assume the mass of free electron to be 9.11 1031 kg.
(12 M)
01. (a)
Sol: Given, band-gap = 2eV
Energy of electron, E = 3eV
Zero electric field from A to B and C to D
Voltage between B and C = 4V
m0 = 9.111031 kg
Band diagram:
A B
2eV 4eV
D
V0 = +4V
W = V0q = 4eV
V(x)
V0
Region-I Region-II
x
0
Figure: Potential function
2mE
Where k1
h2
and
2 ( x ) A 2 e k 2x B2 e k 2x (x 0)
2m(V0 E)
Where k 2
h2
01. (b) Calculate the Fermi energy EFO at 0K for copper and estimate the average speed of the
conduction electrons in Cu. The density of Cu is 8.96 gm/cm3 and atomic weight is 63.5.
Given Avogadros number is 6 1023. (12 M)
01. (b)
Sol: Fermi-energy is the maximum energy occupied by electron at 0ok
The conduction electron population for a metal is calculated by multiplying the density of
conduction electron states (E) and Fermi function, f(E).
dn
( E ) . f ( E )
dE
8 2m3 / 2 1
E ( E E F ) kT
h 3
e 1
8 2m 3 / 2 2 3 2
n EF
h3 3
23
h 2 3 2 3
E F n
8m
01. (c) In the common source amplifier shown, evaluate voltage gain Av, given RD = 2.7 k, = 50
and rds = 25 k. Derive the expression used. (12 M)
+
VDD
RD
+
+
vi v0
RG RS CS
01. (c)
Sol: Given circuit is
VDD
RD
+
+
+
Vi V0
RG
RS CS
RD = 2.7 k
= 50
rds = 25k
We know = gm rds
50 = gm 25k
gm = 2 mA/V
G + +
Vi rds RD V0
RG Vgs
gmVgs 25k
01. (d) Define lumen and candela. The wavelength of visible light ranges from violet at
approximately 380 nm to red at 720 nm. Obtain the bandwidth available of visible light.
(12 M)
01. (d)
Sol: Lumen:
It is measure of total quantity of visible light emitted by source
It is S.1 unit of Luminous flux
Candela:
It is measure of Luminous power per unit solid angle emitted by a point light source in a
particular direction
It is S.1 unit of Luminous Intensity
1 lumen = 1 candela Sr
01. (e) Implement the following expression using NAND gates only:
Y a c a b c (12 M)
01. (e)
Sol: Y = (a + c) (a b c )
= (a + c) abc
a (abc) c(abc) a
b y
a (abc) c(abc) c
a (abc) . c(abc)
02. (a) For the MOSFET characteristic shown in the figure, calculate:
(i) Linear VT and KN
(ii) Saturation VT and KN
(iii) The gate oxide thickness and substrate doping.
cm 2
Assume channel mobility = 500
Vs
VFB = 0, Z = 100 m, L = 2 m
Where Z is the depth of the channel and L is the length of the channel. (25 M)
ID(mA)
2.0
VG= 5V
1.0 VG= 4V
VG= 3V
0 1 2 3 4 5
VD(V)
Since more acceptors are added into donor atoms it becomes p-type compensated semiconductor
n i2
Now electron concentration =
hole concentration
n i2
atoms / cm3
9 1016
02. (c) Define Fan-in and Fan-out with an example. Draw the circuit diagram of an NMOS circuit
to realize f (a, b, c) = a b ac. (20 M)
02. (c)
Sol: Fan-In: The maximum number of inputs connected to the logic gate is called fan-in
Ex:
Here fan-in = k
In generally Gates with large fan-in are slower than gates with small fan-in
Fan-Out: fanout is the maximum number of logic gates that can be driven by a logic gate output
by maintaining the output levels without affecting the logic gate performance.
(or)
Fan-out of a gate specifies no of standard loads that can be connected to the output of
the gate without degrading its normal operation.
Ex:
f (a , b, c) a b ac
a b ac
a b ac
(a b). ac
VDD
VDD
RD
RD f
a
c
VDD
VDD
RD
RD
a
b
03. (a) (i) Consider the ac equivalent circuit of a MOSFET Colpitts oscillator.
C2 C1
L
Derive the expression for oscillation frequency. Also find the condition on the gain to
initiate the oscillations spontaneously.
(ii) As per the Barkhausen criterion, the positive feedback exists a particular frequency
range and the resulting feedback signal reinforces the error signal. Explain the
phenomenon which limits the amplitude of the oscillations under steady state.
(20 M)
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: 13 : CONVENTIONAL PAPER - 1
C2 C1
Equivalent circuit is
L sC2 vgs
sC2 vgs G
+ VD
C2 vgs gmvgs C1
R
1
VD sL sC 2 v gs
sC 2
VD s 2 LC2 1v gs ......1
C1 C 2
LC1C 2
1 CC
C eq 1 2
LCeq C1 C 2
V0
A1 2 10
Vi
Amplitude stabilization:
Given that the circuit is in positive feed back (|A|>1) for the given frequency range of
operation. In order to generate and sustain oscillations the gain control mechanism is as follows
first to ensure that oscillations will start, initial design is such that A is slightly greater than
unity. This corresponds to designing the circuit so that the poles are in the right half of the
splane. Thus as the power supply is turned on oscillations will grow in amplitude. When the
amplitude reaches the desired level, the non linear network comes into action and causes the loop
gain to be reduced to exactly unity. In other words, the poles will be pulled back to j axis.
This action will cause the circuit to sustain. oscillations at this desired amplitude.
A>1 [gain adjustment] A=1
X X
X X
sustained
Generation
A>1 A=1
Amplitude Stabilization:
Vz+ 0.7 V
Slope = A2
V0
Slope A1
0 Vf
(Vz+ 0.7V)
Slope A2
RB
R1
RF
+
+ C +
C C
Vf Vo
R R R
To have amplitude stabilization in the oscillator, it is necessary to limit the output voltage by
introducing nonlinearity. Stability can be achieved by adding two zener diodes in series with
resistance RB.
As long as the magnitude of the voltage V0 across Rf is less than the Vz + 0.7V, the gain of the
RF
Amplifier A1
R1
If V0 increases more than Vz + 0.7, then zener diodes are ON
R F || R B
A2 V0
R1
A
Zener
ON
Zener
OFF A
V0
03. (b) A typical 1 MHz quartz crystal has the following properties:
fs = 1 MHz, fa = 1.0025 MHz
Co = 5 pF, R = 20
The two frequencies fs and fa are called the series and parallel resonant frequencies. In the
equivalent circuit, C0 is parallel with LCR.
What are C and L in the equivalent circuit of the crystal?
What is the quality factor Q of the crystal? (20 M)
03. (b)
Sol: Quartz crystal equivalent circuit
Co
Rs Ls Cs
Given,
fs = 1MHz
fa = 1.0025MHz
C0 = 5pF
Rs = 20
Cs
fa fs 1
C0
f
2
1.0025 10 6
2
C s C 0 a 1 5 10 12 1
1 10
6
f s
= 25.03125 1015F
1
fs
2 L s C s
1 1
Ls
2fs 2
Cs 2 110 25 10
6 2 15
1.013211H
Quality factor
2f s L s
Q
Rs
2 106 1.013211
20
318309.8862
03. (c) What is a multiplexer? Write the symbol and truth table of a 4-1 multiplexer. Implement
the same using logic gates. (20 M)
03. (c)
Sol: (c)
Multiplexer: It is a combinational circuit that selects one of several inputs and forwards it to
output. In general a n 1 MUX has n inputs and log2n selection lines. It is also called as Data
selector
Symbol of 4 1 MUX:
I0
I1 output
41
I2
I3
s1 s0
Truth table:
S1 S0 Output
0 0 I0
0 1 I1
1 0 I2
1 1 I3
S0
S1
I0
output
I1
I2
I3
04. (a) Consider a CMOS inverter biased at VDD = 5V with transistor parameters of KN= KP and
VTN = VTP 1 V. Then consider another CMOS inverter biased at VDD = 10 V with the
same transistor parameters. Determine the critical voltages on the voltage transfer curve of
the CMOS inverter. (20 M)
04. (a)
Sol:
V0
VDD Slope= 1
VIL VI
VIH
Voltage transfer characteristics
VIL: By definition, VIL is the smaller of the two input voltage at which the slope of the VTC
dVout
becomes equal to (1), i.e., 1 . In this case nMOS transistor is in saturation while the
dVin
pMOS transistor is in linear mode. From IDn = IDp we obtain:
kn
2
k
VGSn VTn 2 p 2VGSn VTn VDSp VDSp
2
2
Note that VGSn = Vin, VDSn = Vout, VGSp= (VDD Vin), and VDSp = (VDD Vout)
dV dV
k n Vin VTn k p Vin VDD VTp out Vout VDD Vout VDD out
dVin dVin
dVout
Substituting Vin = VIL and 1 into, we obtain
dVin
kn
Case-i:For VDD = 5V, VTN = VTP 1V, k R 1
kp
2V0 1 5 1
VIL
11
VIL = V0 2.5 (3)
From (1) and (3)
kn
2
k
V0 2.5 12 p 2V0 2.5 5 1V0 5 V0 52
2
VIH: In this point nMOS is in linear mode and pMOS in saturation. Similarly to VIL we apply
KCL to the output node:
kn
2
2VGSn VTn VDSn VDSn
2 k
2
p VGSp VTp
2
Again, using VGSn = Vin, VDSn = Vout, VGSp= (VDD Vin), and VDSp = (VDD Vout)
kn
Case-i:For VDD = 5V, VTN = VTP = 1V, k R 1
kp
5 1 2V0 1
VIL = V0 + 2.5 (6)
2
10 1 2V0 1
VIH = 5 + V0 (7)
2
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: 24 : E & TE
1
04. (b) If is defined as the mean probability per unit time that an electron scattered, show that
the mean time between collisions is . (15 M)
04. (b)
Sol: Consider an infinitesimally small interval dt at time t. Let N be the number of unscattered
1
electrons at time t. The probability of scattering during dt is dt, and the no. of scattered
1 1
electrons during dt is N dt . The change dN in N is thus dN N dt
This equation represents the no. of unscattered electrons at time t. It reflects an exponential
decay law for the no. of unscattered electrons the mean free time t can be calculated from the
mathematical definition of t
t N dt
t 0
N dt
0
04. (c) (i) The transistor circuit shown has = 100, VBE(ACTIVE)= 0.7 V. Find the operating
point (VCE, IC) and the mode of operation when S1, S2, are closed and S1, S2, are open.
S1
IC
470k 1k
IB +
10V
1k
S2
(10 M)
(ii) Find the diode current ID in the circuit shown below when the diode has cut-in voltage,
V = 0.7 and forward resistance, Rf = 25 (15 M)
100 ID
+ 100
100
10V
S1
IC
470k 1k
IB +
10V
1k
S2
10V
IC
1k
470k
1k
IB
When S1&S2 are closed 0.7V
1k
10 0.7
IB 19.7A
470k
IC = IB = 1.977mA
VE = 0V
VC =10 1k(IC) = 8.03V
VCE > 0.2 Transistor is in active region
Operation point (VCE,IC) = (8.03V,1.97mA)
100 ID
+ 100
10V 100
50 ID
5V 100
Given Rf = 25
V =0.7V
50 ID + 0.7
25
+
100
5V
5 0.7
ID 24.57mA
175
SECTION-B
05. (a) Find the Thevenin resistance for the circuit shown below by zeroing the sources. Then,
find the short-circuit current and the Thevenin equivalent circuit.
5
20V + 20 2A
(12M)
05. (a)
Sol: Finding Rth:
20
Rth = 5//20 = 4
Finding Isc:
5 0V
20V +
20 2A Isc
0 20 0 0
2 I sc 0
5 20
4 2 + Isc = 0
Isc = 6A
Finding VOC:
5 VOC
+
20V +
20 2A VOC
VOC 20 VOC
20
5 20
4VOC 80 + VOC 40 = 0
5VOC = 120
VOC = 24V
OR
VOC = ISCRth
= 64
= 24V
24V +
05. (b) A voltmeter and an ammeter are to be used to determine the power dissipated in a resistor.
Both the instruments are guaranteed to be accurate within 1% at full-scale deflection.
If the voltmeter reads 80 V on its 150 V range and the ammeter reads 70 mA on its 100 mA
range, Determine the limiting error for the power calculation. (12 M)
05. (b)
Sol: Given data:
Both voltmeter and ammeter accurate within 1% of fsd.
Voltmeter reads 80 V on 150 V range
05. (c) The following measurements pertain to a two-port circuit operating in the sinusoidal steady
state. With port 2 open, a voltage equal to 150 cos 4000t V is applied to port 1. The current
into port 1 is 25 cos (4000t-45) A, and the port 2 voltage is 100 cos (4000t+15) V. With
port 2 short-circuited, a voltage equal to 30 cos 4000t V is applied to port1. The current
into port 1 is 1.5 cos(4000t+30) A, and the current into port 2 is 0.25cos(4000t+150)A.
Find the parameters that can describe the sinusoidal steady-state behaviour of the circuit.
(12M)
05. (c)
Sol:
25450 I2=0
+
15000 +
N/W 100150
V1 = AV2 BI2
I1= CV2 DI2
V1 1500 0
I2 = 0 A 1.5 150
V2 100150
I1 25 450 1
C 600
V2 10015 0
4
Now
1.5300
3000 +
N/W 0.251500
V1 300 0
V2 = 0 B 12030 0
I2 0.25150 0
I1 1.530 0
D 660 0
I2 0.25150 0
The parameters that can describe the sinusoidal steady state behaviour are
A B 1.5 150 12030 0
C D
0.25 60 660 0
0
05. (d) For the circuit shown in the figure, find the branch currents I1,I2 and I3 using Mesh
analysis. I1 I2 (12 M)
6
5 I3
15V + 10 4
+ 10V
05. (d)
Sol: 5 I1 6 I2
+ +
I3
15V +
+ +
10 4
+
+ 10V
I3 = I1 I2
15 5I1 10(I1I2) 10 = 0
15I1 10I2 = 5
3I1 2I2 = 1 --------(1)
6I2 + 4I2 10 +10(I2I1) = 0
2I2 I1= 1 -------(2)
05. (e) (i) Briefly discuss only the basic principles of a Thermistor and Thermocouple.
(ii) Explain why a semiconductor has a negative resistance coefficient.
(12 M)
05. (e) (i)
Sol: Thermistors are essential semiconductor devices that behave as resistors with high negative
temperature coefficient and are atleast 10 times as sensitive as the platinum resistance
thermometer. Thermisters can detect very small changes in temperature which could not be
observed with an RTD or a thermocouple. Sensitivity of thermister is higher than both RTD and
thermocouple. Sensitivity of thermistor is higher than both RTD and thermocouple. Thermistors
exhibits a highly nonlinear characteristic of resistance versus temperature.
The approximate relationship between resistance and temperature applying to most thermistors is
1 1
T1 T0
R1 = R 0 e
The response time of thermistors can vary from a fraction of second to minutes depending on
the size of the detecting mass and thermal capacity of the thermistor.
Thermocouples consists of two dissimilar metal wires A and B insulated from each other but
welded or brazed together at their ends forming two junctions.
Metal A
Hot Cold
T1 T2
Metal B
Thermo junctions
If two wires of different metals are joined together at each form a complete circuit in which
current flows if two junctions are kept at two different temperature called seeback effect.
The relation between the thermo emf setup and temperature difference of hot and cold junction
is given by
E = (T T0) + ( T 2 T02 )
05. (e)(ii)
Sol: Conductivity in a semiconductor is given by
i n i n p
n i [Let = n + p]
Conductivity of intrinsic semiconductor increases and hence its resistivity decreases there by
resistance decreases from this we can say that intrinsic semiconductor has negative resistance
coefficient
T ni i R
R
Temperature coefficient Ve
T
06. (a) (i) Use source transformations to aid in solving for the currents i1 and i2 shown in the
circuit below. i1 5
(15 M)
i2
+
20V 1A
10
20V +
+
10V
20 10 2
i1 A
15 3
i2
4A 5 10 1A
5 5
i2 4 1 A
5 10 3
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: 37 : CONVENTIONAL PAPER - 1
06. (a) (ii) Find the phasor voltage and the phasor current through each element in the circuit
shown in the figure. (10 M)
iC iL iR
+
5 cos (200t) v 100F 1H 100
Y(Admittance)
1 j
Y jC
R L
1 j j
100 50 200
1 3j
100 200
2 3j
200
I = Y.V
V
I 5 cos 200t
Y
2 3j
200
1000
cos 200 t 56.30
13
cos200t 56.30
V 10
iR
R 13
iL
V
jL
5
cos 200t 146.30
13
i C V( jC)
1000
j 200 10 4 cos 200t 56.30
13
cos200t 56.30
20 j
13
20
cos 200t 33.7 0
13
06. (b) Find the equivalent resistance and capacitance that causes a Wien bridge to null with the
following component values: (15 M)
R1 = 3.1 k , R3 = 25k, R4 = 100k
C1 = 5.2 F and f = 2.5 kHz
06. (b)
Sol: b
I1
C2
R2 R4
I1
a G
I2 c
R1 R3
C1 I2
d
E
Wiens bridge is used to determine the frequency at a AC source and also used in many
applications like capacitance having series resistance at balance.
R2 j
R 3 R 1 R 4
1 j C R
2 2 C1
R 3 R1 C2 1
i.e., j C1R 2
R 4 R 2 C1 C 2 R 1
and
1
R 1 R 2 C1 C 2
1
f
2 R 1R 2C1C 2
1
6.25 106
4 (3.110 ) (5.2 10 6 ) R 2C 2
2 3
1
R 2C2
4 (3.1 10 ) (5.2 10 6 ) 6.25 106
2 3
06. (c) (i) The voltage source Vg drives the circuit shown in the figure. The response signal is the
voltage across the capacitor, V0. Calculate the numerical expression for the transfer
function. (10 M)
1000
+
250 1F
+
Vg V0
50mH
R1
+
R2
Vg +
1/cs V0
sL
1
R 2 SL // CS
V0 (s) Vg (s)
R SL // 1
R1
2
CS
V0 (s) Vg (s)
SL R 2
R 1LCS (R 1R 2 C L)S R 1 R 2
2
06. (c) (ii) Write down the incidence matrix and cut-set matrices for the network shown below.
(10 M)
5 5
4
10V
4 4
5
06. (c) (ii)
Sol: Writing graph for given network
C
6
1 2
D
4 5
A B
3
Incident matrix given by
1 2 3 4 5 6
A
1 0 1 1 0 0
B
0 1 1 0 1 0
C
1 1 0 0 0 1
D0 0 0 1 1 1
Now writing tree for given graph and identifying basic cut sets
C3
C
6
1 2
4 5
A B
3
C1 C2
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: 43 : CONVENTIONAL PAPER - 1
07. (a) A certain 5-hp three-phase induction motor operates from a 440-V-rms (line-to-line) three-
phase source and draws a line current of 6.8 A rms at a power factor of 78 percent lagging
under rated full load conditions. The full load speed is 1150 rpm. Under no-load conditions,
the speed is 1195 rpm, and the line current is 1.2 A rms at power factor of 30 percent
lagging. Find the power loss and efficiency with full load, the input power with no load, and
the speed regulation. (20 M)
07. (a)
Sol: Given
VLL = 440V
If1 = 6.8A
cosf1= 0.78lag
Nf1 = 1150 rpm
I0 = 1.2A
cos0= 0.3lag
N0 = 1195 rpm
At full load:
Power loss Ploss = Pin P0
= 4042.19 3675
PLoss = 367.19W
Power output
efficiency =
Power input
3675
4042.19
= 90.91%
07. (b) (i) Explain the operation of a Voltage-to Frequency Converter. Given the primary
advantages and limitations of voltage-to-frequency converters.
(ii) The relationship between the input voltage vi and the output frequency f for the VCO is
given as vi = f/50.
If 530 pulses are passed by the AND gate during 0.1 sec gating pulse, what is the
amplitude of vi? (20 M)
C
R Comparator Counter
R
Digital
Output
Pulse
Generator
Pulse trigger output
Output of integrator
Zero Level
Trigger Level
Time between
two threshold levels
The integrator produces a ramp signal whose slope is proportional to the input voltage signal
level. When this ramp signal reaches a present threshold level, a trigger pulse is produced. Also
a current pulse is produced which discharges the capacitor of the integrator, after which a new
ramp is initiated.
The time between successive threshold level crossings is inversely proportional to the slope of
the ramp.
Since the slope of the ramp is proportional to the input analog voltage, hence the frequency pf
output pulses from the comparator is directly proportional to the input voltage.
Advantages:
(1) V to F converters integrate noise and so are useful under circumstances similar to dual
slope units
(2) V to F are precise, accurate, simple, inexpensive, low powered and mostly run for a wide
range of supply voltages
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: 46 : E & TE
Limitations:
(1) Due to changeover switch there is integrator transient problem.
(2) The switch isnt closed for long time as there will be residual potential on the integrator and
the time to integrate to threshold will be reduced.
(3) It relatively slow.
07. (c) For the circuit shown in the figure below, let vc (0) = 15V
(i) Find vc,vx and ix for t > 0. (10 M)
8
ix
+
5 + 12 vx
0.1F
vc
15
Vc (s)
Vc (s) s Vc (s) 0
5 10 / s 20
1 s 1 3
Vc (s)
5 10 20 2
4 2s 1 3
Vc (s)
20 2
30 15
Vc (s)
2s 5 s 5
2
5
t
v c ( t ) 15e 2
; t>0
Vx(s) = Ix(s).12
Vc (s)
12
20
15 12
5 20
s
2
9
5
s
2
5
t
v x ( t ) 9e 2
; t>0
Vc (s)
I x (s)
20
15 1
20 s 5
2
5
3 t
i x ( t ) e 2 ; t >0
4
V1 4 V2
300A j3 j6 12
V1 (4 j) V2 (1 2 j) 360 0
4 j(V1 ) 4 j(V2 ) 401350
V2 (2 j 1) 360 401350
0
360 0 401350
V2
1 2 j
= 31.487.180
V1 = V2+10450
= 25.7870.470
08. (a) (i) Two coils are wound on a toroidal core as illustrated in the figure below. The reluctance
of the core is 107 (ampere-turns)/Wb.
Determine the self-inductances and mutual inductance of the coils. Assume that the flux
is confined to the core so that all of the flux links both the coils. (10 M)
i1 i2
+ +
e1 e2
N1 = 100 N2 = 200
L1
100
2
10 7
10 4
L1
107
L1 = 103H
N 22
Self conductance of coil 2 L 2
L2
200
2
L2
2002
L2 = 4103H
Since the flux is confined only to core coefficient of coupling K = 1
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: 51 : CONVENTIONAL PAPER - 1
M = 1 10 3 4 10 3
M = 2103H
08. (a) (ii) Consider the source, transformer and load shown in the figure below. Determine the
rms values of the currents and voltages, (case-1) with the switch open and (case-2) with
the switch closed. (10 M)
N1:N2 I2
I1
+ +
+
110 Vrms V1 10
V2
50 Hz
N1
5
N2
08. (a) (ii)
Sol: Case I: switch open
N1:N2 I2
I1
+ +
+
110 Vrms V1 10
V2
50 Hz
N1
5
N2
Assuming zero voltage drop V1= 110V
When secondary is open
I2 = 0A
From current transformation formula
I1 N 2 1
I 2 N1 5
I1 = 0A
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: 52 : E & TE
V1 N1
but (Voltage transformation)
V2 N 2
110
5
V2
V2 = 22V
V1= 110V I1 = 0A
V2 = 22V I2= 0A
N1
5
N2
N2 1
V2 110V 110
N1 5
V2= 22V
1
I1 I 2
5
2.2
I1
5
I1= 0.44A
V1= 110V I1= 0.44A
V2= 22V I2= 2.2A
08. (b) (i) Describe sampling oscilloscope and storage oscilloscope in brief.
(ii) If, in the figure given below, the distance Y1 is 1.8 cm and Y2 is 2.3 cm, what is the
phase angle using the X-Y mode of oscilloscope?
(15 M)
Y1 Y2
The horizontal deflection of the electron beam is obtained by application of a staircase waveform
to X deflection plates
Input Waveform
Sampling Plates
A digital oscilloscope digitises the input signal, so that all subsequent signals are digital.
A conventional CRT is used and storage occurs in electronic digital memory.
Vertical
Input Amplifier Digitiser Memory Analyser Waveform Plates
Signal Circuitry Reconstruction
CRT
Trigger Time Horizontal
Clock Base Amplifier Horizontal Plates
The input signal is digitised and stored in memory in digital form as shown in block diagram. In
this state it is capable of being analysed to produce a variety of different information. To view
the display on the CRT the data from memory is reconstructed in analog form.
Digitising occurs by taking a sample of the input waveform at periodic intervals. In order to
ensure that no information is lost, sampling theory states that the sampling rate must be atleast
twice as fast as the highest frequencies in the input signal. To full fill this requirement we
require digitiser which is flash A/D converter which is fastest in conversion rate many different
input channels are used with DSO. However if all these channels share a common store, through
a multiplexer then the memory available to each channel is reduced.
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: 55 : CONVENTIONAL PAPER - 1
Ymax Y2 2.3
But as direction of movement of Lissagious figure not given phase angle may be two possible
cases
1.8 o 1.8 1 1.8 o
1 = sin 1 = 51.5 or 2 = sin 1 = 360 sin = 308.5
2.3 2.3 2.3
08. (c) For the S-domain circuit shown in the figure, find:
(i) the transfer function H(s) = V0/V1,
(ii) the impulse response,
(iii) the response when vi(t) = u(t) V, and
(iv) the response when vi(t) = 8 cos 2t V. (25 M)
1 a S
+
Vi +
1 1 V0
b
08. (c)
Sol:
(i) 1 Va S
a
+
Vi +
1 1 V0
Va Vi Va V
a 0 -------(1)
1 1 s 1
1
V0 Va ------(2)
s 1
Va
(1) 2Va Vi+ 0
s 1
1
Va 2 Vi
s 1
Va s 1
Vi 2s 3
V0 1
(2)
Va s 1
V0 V0 Va 1 s 1
Vi Va V1 s 1 2s 3
V0 1
Vi 2s 3
V0 1 / 2
(ii)
Vi s 3
2
3
1 2t
h(t) e ;t0
2
1
(iii) Vi(t) = u(t) Vi (s)
s
1
1/ 2 2 1 1 1
V0 (s) Vi (s)
3 3 3 s s 3
s s s
2 2 2
V0 ( t )
1
3
1 e 3 t / 2 u ( t )
4
Tan
3
= 53.130