Vous êtes sur la page 1sur 4

Ordering number : ENA0274 2SC6093LS

SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor

2SC6093LS Color TV Horizontal Deflection


Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 5 A
Collector Current (Pulse) ICP 12 A
2.0 W
Collector Dissipation PC
Tc=25C 25 W
Junction Temperature Tj 150 C
Storage Temperature Tstg --55 to +150 C

Electrical Characteristics at Ta=25C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=800V, IE=0A 10 A
Collector Cutoff Current ICES VCE=1500V, RBE=0 1.0 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0A 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0A 40 130 mA
VCE(sat)1 IC=1.35A, IB=0.27A 0.1 0.3 V
Collector-to-Emitter Saturation Voltage
VCE(sat)2 IC=2.7A, IB=0.54A 2 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=2.7A, IB=0.54A 1.5 V
hFE1 VCE=5V, IC=0.5A 10
DC Current Gain
hFE2 VCE=5V, IC=3A 5.3 7.5
Diode Forward Voltage VF IEC=4A 2 V
Fall Time tf IC=1.8A, IB1=0.36A, IB2=--0.72A 0.2 s

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11707KC TI IM TC-00000456 No. A0274-1/4


2SC6093LS

Package Dimensions Switching Time Test Circuit


unit : mm (typ)
7509-003
IB1
PW=20s
OUTPUT
10.0 4.5 D.C.1% IB2
3.2 2.8
INPUT RB
3.5 VR RL=111
7.2
16.0 50 + +
16.1

100F 470F

0.6
0.9 VBE= --5V VCC=200V
3.6

1.2 1.2
14.0

0.75 0.7

1 2 3 1 : Base
2 : Collector
2.4

3 : Emitter

2.55 2.55 SANYO : TO-220FI(LS)

IC -- VCE IC -- VBE
5.0 5.0
VCE=5V
A
4.5 1.5 4.5

4.0 4.0
Collector Current, IC -- A

Collector Current, IC -- A

3.5 3.5
0.6A
3.0 0.5A 3.0

9A 0. 8A 0. 7A 0.4A
2.5 1.0A 0. 2.5
0.3A
2.0 1.1A 2.0
0.2A
1.2A
C

1.5 1.5
20

0.1A
1.3A
1
25C

1.0
C

1.0
Ta=

--40

0.05A
0.5 1.4A 0.5
IB=0A
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Collector-to-Emitter Voltage, VCE -- V IT11312 Base-to-Emitter Voltage, VBE -- V IT11313
hFE -- IC VCE(sat) -- IC
5 10
VCE=5V IC / IB=5
25C

7
3 5
C
Saturation Voltage, VCE(sat) -- V

0C

120
Ta= 3
4

2
Ta= --
DC Current Gain, hFE

2
C
25
C
120

C
10 0 1.0
--4
Collector-to-Emitter

7
7 5
5 3
2 Ta=
3 --4
25 0C
0.1 C
2
7
5 120C
1.0 3
0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7
Collector Current, IC -- A IT11314 Collector Current, IC -- A IT11315

No. A0274-2/4
2SC6093LS
SW Time -- IC SW Time -- IB2
7 10
VCC=200V VCC=200V
5 tstg 7
IC / IB2=5 IC=1.8A
IB2 / IB1=2 5 IB1=0.36A
Switching Time, SW Time -- s

Switching Time, SW Time -- s


3
R load tst R load
3 g
2
2

1.0
1.0
7
7
5
5

tf
3 3

2 2
tf

0.1 0.1
0.1 2 3 5 7 1.0 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A IT11316 Base Current, IB2 -- A IT11317
Forward Bias A S O Reverse Bias A S O
3 3
2 ICP=12A 2
L=500H
IB2= --1.0A
10
7 IC=5A 10
Tc=25C
5 Single pulse
Collector Current, IC -- A

Collector Current, IC -- A
10

7
0

3
30

5
s

2
0
s
1m

3
1.0
s

7 2
10

5
ms

3
1.0
2
7
DC

0.1 5
7
op

5
era

3
tio

3 2
Tc=25C
n

2
Single pulse
0.01 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 10 2 3 5 7 100 2 3 5 7 1000 2 3 5
Collector-to-Emitter Voltage, VCE -- V IT11318 Collector-to-Emitter Voltage, VCE -- V IT11319
PC -- Ta PC -- Tc
2.5 30

25
Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

2.0

20
1.5
No
he 15
at
1.0
sin
k
10

0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C IT11320 Case Temperature, Tc -- C IT11321

No. A0274-3/4
2SC6093LS

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.

This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.

PS No. A0274-4/4