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  • Solutions 1: Semiconductor Nanostructures Thomas Ihn Fall 2017

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    This document contains notes from a semiconductor nanostructures class, including solutions to problems about modern CPUs and calculating resistances. The notes discuss how CPUs now contain several billion transistors with gate lengths around 14 nm, consisting of only a few atoms. It also shows how to calculate the resistance of a silicon wafer and a copper wire using resistivity, cross-sectional area, and length, finding the silicon to be 2 kilohms and copper to be 340 microhms.

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    This document contains notes from a semiconductor nanostructures class, including solutions to problems about modern CPUs and calculating resistances. The notes discuss how CPUs now contain several billion transistors with gate lengths around 14 nm, consisting of only a few atoms. It also shows how to calculate the resistance of a silicon wafer and a copper wire using resistivity, cross-sectional area, and length, finding the silicon to be 2 kilohms and copper to be 340 microhms.

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    44 vues1 page

    Solutions 1: Semiconductor Nanostructures Thomas Ihn Fall 2017

    Transféré par

    Apu
    This document contains notes from a semiconductor nanostructures class, including solutions to problems about modern CPUs and calculating resistances. The notes discuss how CPUs now contain several billion transistors with gate lengths around 14 nm, consisting of only a few atoms. It also shows how to calculate the resistance of a silicon wafer and a copper wire using resistivity, cross-sectional area, and length, finding the silicon to be 2 kilohms and copper to be 340 microhms.

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme PDF, TXT ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    sur 1

    Thomas Ihn

    Semiconductor Nanostructures
    Fall 2017

    Solutions 1 released: 20.09.2016


    Topics: Modern CPUs, resistance determination discussed: 27.09.2016

    Problem 1: Modern CPUs

    1. several billions

    2. Intel, Samsung, Qualcomm

    3. gate length of about 14 nm

    4. around 1 nm, which corresponds to several atoms only

    5. leakage currents!

    Problem 2: Silicon wafer

    ρSi = 10 Ωcm, ρCu = 1.7 × 10−6 Ωcm; cross sectional area A = 0.05 cm2 , length L = 10 cm,
    ⇒ RSi = ρSi L/A = 2 kΩ; RCu = ρCu L/A = 340 µΩ.

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