Thomas Ihn

Semiconductor Nanostructures
Fall 2017

Solutions 8 released: 08.11.2017

Topic: Mobility, scattering time discussed: 15.11.2017

Problem 1

part 1:

The current going through the sample is defined by the voltage source and the external
resistor (neglecting the small sample resistance):

1V
I= = 0.1µA
107 Ω

The sample resistance then is:

Ux
Rxx = = 100Ω
I

The resistivity of the sample (by definition):

W
ρxx = Rxx = 50Ω
L

part 2:

In a 2DEG, the Hall resistance and the Hall resistivity are the same:

Uy B
Rxy = ρxy = =
I ns |e|

Solving for ns :

ns = 2.9 · 1011 cm−2

part 3:

Using the following two formulas

|e|τD
µe =
m?
m?
ρxx =
ns |e|2 τD
leads to:

1
µe = ≈ 4300 000 cm2 /V s
ρxx ns |e|

The corresponding scattering time is τD ≈ 16 ps. The mean free path can be calculated
(including spin degeneracy) by:

σh
l=
|e|2 kF

1
Here, σ = ρxx for zero magnetic field. For a two-dimensional electron gas with
parabolic dispersion relation and spin degeneracy 2 (see exercise 3), the following
equation holds:

kF2
ns =
2π

Putting the formulas together:

h 1 1
l= √ ≈ 3.8 µm
e2 ρxx 2πns