Académique Documents
Professionnel Documents
Culture Documents
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) () ID (A)
–60 0.020 –65a
TO-220AB
S
TO-263
G
G D S G D S
Top View
Top View D
TC = 25_C –65a
Continuous Drain Current
ID
(TJ = 175_C) TC = 125_C –39
A
Pulsed Drain Current IDM –200
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 A –60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 A –2.0 –3.0 –4.0
Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V, TJ = 125_C –50
VDS = –60 V, VGS = 0 V, TJ = 175_C –150
On-State Drain Currenta ID(on) VDS = –5 V, VGS = –10 V –120 A
VGS = –10 V, ID = –30 A 0.017 0.020
Dynamicb
Input Capacitance Ciss 4500
Output Capacitance Coss VGS = 0 V, VDS = –25 V, f = 1 MHz 870 pF
Reversen Transfer Capacitance Crss 350
Total Gate Chargec Qg 85 120
Gate-Source Chargec Qgs VDS = –30 V, VGS = –10 V, ID = –65 A 24 nC
Gate-Drain Chargec Qgd 22
Turn-On Delay Timec td(on) 15 40
Rise Timec tr VDD = –30 V, RL = 0.47 40 80
ns
Turn-Off Delay Timec td(off) ID ] –65 A, VGEN = –10 V, RG = 2.5 65 120
Fall Timec tf 30 60
Notes:
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.
80 80
5V
40 40
4V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
TC = –55_C 0.025
80
r DS(on)– On-Resistance ( )
g fs – Transconductance (S)
20
0.005
0 0.000
0 20 40 60 80 100 0 20 40 60 80 100
16 ID = 65 A
C – Capacitance (pF)
4000
12
3000
8
2000
Coss 4
1000 Crss
0 0
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175
1.5 TJ = 25_C
10
1.0
0.5
0.0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.3 0.6 0.9 1.2 1.5
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
80 500
10 s
Limited by rDS(on)
100
100 s
60
I D – Drain Current (A)
1 ms
10
40
10 ms
100 ms
dc
20 1 TC = 25_C
Single Pulse
0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V)
1
Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1 0.05
0.02
Single Pulse
0.01
10–5 10–4 10–3 10–2 10–1 1 3
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.