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SPP03N60C3, SPB03N60C3

Final data SPA03N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V


Feature RDS(on) 1.4 Ω
• New revolutionary high voltage technology ID 3.2 A
• Ultra low gate charge
• Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

• Extreme dv/dt rated


• High peak current capability 1
2
3

• Improved transconductance P-TO220-3-31

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code Marking


SPP03N60C3 P-TO220-3-1 Q67040-S4401 03N60C3
SPB03N60C3 P-TO263-3-2 Q67040-S4391 03N60C3
SPA03N60C3 P-TO220-3-31 - 03N60C3

Maximum Ratings
Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current ID A
TC = 25 °C 3.2 2.8
TC = 100 °C 2 1.8
Pulsed drain current, tp limited by Tjmax ID puls 9.6 9.6 A
Avalanche energy, single pulse EAS 100 100 mJ
ID =1.6A, VDD =50V

Avalanche energy, repetitive tAR limited by Tjmax 1) EAR 0.2 0.2


ID =3.2A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 3.2 A


Reverse diode dv/dt dv/dt 6 6 V/ns
IS = 3.2 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C

Gate source voltage static VGS ±20 ±20 V


Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 38 29.7 W
Operating and storage temperature Tj , Tstg -55...+150 °C
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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.3 K/W
Thremal resistance, junction - case, FullPAK RthJC_FP - - 4.1
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Linear derating factor - - 0.3 W/K
Linear derating factor, FullPAK - - 0.24
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified


Static Characteristics
Drain-source breakdown voltage V(BR)DSS 600 - - V
VGS =0V, ID =0.25mA

Drain-source avalanche breakdown voltage V(BR)DS - 700 -


VGS =0V, ID =3.2A

Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 3.9


ID = 135 µA

Zero gate voltage drain current IDSS µA


VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.5 1
VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 70
Gate-source leakage current IGSS - - 100 nA
VGS =30V, VDS=0V

Drain-source on-state resistance RDS(on) - 1.26 1.4 Ω


VGS =10V, ID=2A, Tj=25°C

Gate input resistance RG - 10 -


f = 1 MHz, open drain

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS ≥2*ID *RDS(on)max, - 3.4 - S
ID =2A

Input capacitance Ciss VGS =0V, VDS =25V, - 400 - pF


Output capacitance Coss f=1MHz - 150 -
Reverse transfer capacitance Crss - 5 -
Effective output capacitance, 3) Co(er) VGS =0V, - 12 -
energy related VDS =0V to 480V

Effective output capacitance, 4) Co(tr) - 26 -


time related
Turn-on delay time td(on) VDD =350V, VGS =0/10V, - 7 - ns
Rise time tr ID =3.2A, - 3 -
Turn-off delay time td(off) RG=20Ω - 64 100
Fall time tf - 12 20
Gate Charge Characteristics
Gate to source charge Qgs VDD =420V, ID =3.2A - 2 - nC
Gate to drain charge Qgd - 6 -
Gate charge total Qg VDD =420V, ID =3.2A, - 13 17
VGS =0 to 10V

Gate plateau voltage V(plateau) VDD =420V, ID =3.2A - 5.5 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AV AR
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V
o(er) oss DS DSS .
4C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Inverse diode continuous IS TC=25°C - - 3.2 A
forward current
Inverse diode direct current, ISM - - 9.6
pulsed
Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V
Reverse recovery time trr V R=420V, I F=I S , - 250 400 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 1.8 - µC
Peak reverse recovery current Irrm - 15 - A
Peak rate of fall of reverse dirr /dt Tj=25°C - - - A/µs
recovery current

Typical Transient Thermal Characteristics


Symbol Value Unit Symbol Value Unit
SPP_B SPA SPP_B SPA
Rth1 0.054 0.054 K/W Cth1 0.00005915 0.00005238 Ws/K
Rth2 0.115 0.103 Cth2 0.0002028 0.0002036
Rth3 0.18 0.178 Cth3 0.0003548 0.0002966
Rth4 0.361 0.456 Cth4 0.0008227 0.0009111
Rth5 0.345 0.745 Cth5 0.004183 0.003461
Rth6 0.107 2.562 Cth6 0.046 0.412

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

1 Power dissipation 2 Power dissiaption FullPAK


Ptot = f (TC ) Ptot = f (TC )

SPP03N60C3
40 30
W
W

32 24
22
28

P tot
20
Ptot

24 18
16
20
14
16 12
10
12
8
8 6
4
4
2
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

3 Safe operating area 4 Safe operating area FullPAK


ID = f ( VDS ) ID = f (VDS )
parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C
1
10 10 1

A A

10 0 10 0
ID

ID

tp = 0.001 ms
-1
tp = 0.001 ms -1 tp = 0.01 ms
10 tp = 0.01 ms 10
tp = 0.1 ms
tp = 0.1 ms tp = 1 ms
tp = 1 ms tp = 10 ms
DC DC

10 -2 0 1 2 3
10 -2 0 1 2 3
10 10 10 V 10 10 10 10 V 10
VDS VDS

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

5 Transient thermal impedance 6 Transient thermal impedance FullPAK


ZthJC = f (tp ) ZthJC = f (tp )
parameter: D = tp/T parameter: D = tp/t
10 1 10 1

K/W K/W

10 0 10 0
ZthJC

ZthJC
10 -1 10 -1
D = 0.5 D = 0.5
D = 0.2 D = 0.2
D = 0.1 D = 0.1
D = 0.05 D = 0.05
D = 0.02 D = 0.02
10 -2 10 -2 D = 0.01
D = 0.01
single pulse single pulse

10 -3 -7 -6 -5 -4 -3 -1
10 -3 -7 -6 -5 -4 -3 -2 -1 1
10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

7 Typ. output characteristic 8 Typ. output characteristic


ID = f (VDS ); Tj=25°C ID = f (VDS ); Tj=150°C
parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS
11 6
A
20V
A
20V 7V
9
7V 6V
6.5V 5.5V
8
6V 5V
5.5V 4 4.5V
ID

ID

7
5V 4V
4.5V 3.5V
6
4V
3
5

4
2
3

2 1

0 0
0 4 8 12 16 V 24 0 4 8 12 16 V 24
VDS VDS

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

9 Typ. drain-source on resistance 10 Drain-source on-state resistance


RDS(on) =f(ID ) RDS(on) = f (Tj )
parameter: Tj =150°C, VGS parameter : ID = 2 A, VGS = 10 V
SPP03N60C3
10 8

Ω Ω
4V
4.5V
5V
8
5.5V 6

RDS(on)
RDS(on)

6V
7 6.5V
8V 5
20V
6
4
5

3
4

2 98%
3
typ
2 1

1 0
0 1 2 3 4 5 6 A 8 -60 -20 20 60 100 °C 180
ID Tj

11 Typ. transfer characteristics 12 Typ. gate charge


ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (QGate )
parameter: tp = 10 µs parameter: ID = 3.2 A pulsed
SPP03N60C3
11 16
A
25°C V

9
12
8
V GS

0,2 VDS max


ID

7 10 0,8 VDS max


150°C
6
8
5

4 6

3
4

2
2
1

0 0
0 2 4 6 8 10 12 14 16 V 20 0 2 4 6 8 10 12 14 16 nC 20
VGS QGate

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

13 Forward characteristics of body diode 14 Typ. switching time


IF = f (VSD ) t = f (ID), inductive load, Tj =125°C
parameter: Tj , tp = 10 µs par.: VDS =380V, VGS=0/+13V, RG =20Ω
10 1 SPP03N60C3
100

ns
A

80

70
10 0
IF

60

t
50

40 td(off)
10 -1 tf
Tj = 25 °C typ 30 td(on)
tr
Tj = 150 °C typ
20
Tj = 25 °C (98%)
Tj = 150 °C (98%) 10

10 -2 0
0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 0.5 1 1.5 2 2.5 A 3.5
VSD ID

15 Typ. switching time 16 Typ. drain current slope


t = f (RG ), inductive load, Tj =125°C di/dt = f(RG ), inductive load, Tj = 125°C
par.: VDS =380V, VGS=0/+13V, ID=3.2 A par.: VDS =380V, VGS=0/+13V, ID=3.2A
500 1500

ns A/µs

400 1200

350 1050
di/dt

300 900
t

250 td(off) 750


tf
200 td(on) 600
tr
150 450
di/dt(on)
100 300

50 150 di/dt(off)

0 0
0 20 40 60 80 100 120 140 160 Ω 200 0 40 80 120 160 Ω 220
RG RG

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

17 Typ. drain source voltage slope 18 Typ. switching losses


dv/dt = f(RG ), inductive load, Tj = 125°C E = f (ID ), inductive load, Tj=125°C
par.: VDS =380V, VGS=0/+13V, ID=3.2A par.: VDS =380V, VGS=0/+13V, RG =20Ω
90 0.01
*) Eon includes SDP06S60
V/ns mWs diode commutation losses.

0.008
70

0.007
dv/dt

60
Eon*

E
0.006
50
0.005
40 Eoff
dv/dt(on)
0.004
30
0.003

20
0.002
dv/dt(off)
10 0.001

0 0
0 20 40 60 80 100 120 140 160 Ω 200 0 0.5 1 1.5 2 2.5 A 3.5
RG ID

19 Typ. switching losses 20 Avalanche SOA


E = f(RG ), inductive load, Tj =125°C IAR = f (tAR )
par.: VDS =380V, VGS=0/+13V, ID=3.2A par.: Tj ≤ 150 °C
0.06 3.5
*) E on includes SDP06S60
mWs diode commutation losses.
A

0.048
Eoff
0.042 2.5
I AR
E

0.036
2
Eon* Tjstart=25°C
0.03

1.5
0.024

0.018 1
Tjstart=125°C
0.012
0.5
0.006

0 0 -3 -2 -1 0 1 2 4
0 40 80 120 160 Ω 220 10 10 10 10 10 10 µs 10
RG tAR

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

21 Avalanche energy 22 Drain-source breakdown voltage


EAS = f (Tj ) V(BR)DSS = f (Tj )
par.: ID = 1.6 A, VDD = 50 V
SPP03N60C3
120 720

V
mJ

680

V(BR)DSS
EAS

80 660

640
60
620

40 600

580
20
560

0 540
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180
Tj Tj

23 Avalanche power losses 24 Typ. capacitances


PAR = f (f ) C = f (VDS)
parameter: EAR =0.2mJ parameter: VGS =0V, f=1 MHz
200 10 4

W pF

160
10 3
140 Ciss
P AR

120

100 10 2

80 Coss

60
10 1
40

20 Crss

0 4 5 6
10 0
10 10 Hz 10 0 100 200 300 400 V 600
f VDS

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

25 Typ. Coss stored energy


Eoss=f(VDS )

2.5

µJ
E oss

1.5

0.5

0
0 100 200 300 400 V 600
VDS

Definition of diodes switching characteristics

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

P-TO-220-3-1
B
10 ±0.4 4.44
A
3.7 ±0.2 2.8 ±0.2 1.27±0.13
15.38 ±0.6

0.05

9.98 ±0.48
13.5 ±0.5
5.23 ±0.9

0.5 ±0.1
3x
0.75 ±0.1 2.51±0.2
1.17 ±0.22
2x 2.54
0.25 M A B C

All metal surfaces tin plated, except area of cut.


Metal surface min. x=7.25, y=12.3

P-TO-263-3-1 (D2-PAK)
4.4
10 ±0.2
A 1.27 ±0.1
0...0.3 B
8.5 1) 0.1
1 ±0.3

0.05

2.4
7.55 1)
9.25 ±0.2
(15)

2.7 ±0.3
4.7 ±0.5

0...0.15
0.75 ±0.1 0.5 ±0.1
1.05
2.54 8 ˚ MAX.
5.08
0.25 M A B 0.1 B

1)
Typical
All metal surfaces: tin plated, except area of cut.
Metal surface min. x=7.25, y=6.9

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

P-TO-220-3-31 (FullPAK)
10.5 ±0.005
6.1 ±0.002 4.7 ±0.005
1.5 ±0.001 2.7 ±0.005


15.99 ±0.005
14.1 ±0.005
12.79 ±0.005

9.68 ±0.005
3.3 ±0.005
13.6 ±0.005

1 2 3

1.28 +0.003
-0.002 0.5 +0.005
-0.002
0.7 +0.003
-0.002 2.57 ±0.002
2.54
Please refer to mounting instructions (application note AN-TO220-3-31-01)

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SPP03N60C3, SPB03N60C3
Final data SPA03N60C3

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© Infineon Technologies AG 1999
All Rights Reserved.

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