Vous êtes sur la page 1sur 4

SGA-6589

Product Description
SGA-6589Z Pb
RoHS Compliant
& Green Package

The SGA-6589 is a high performance SiGe HBT MMIC DC-3500 MHz, Cascadable
Amplifier. A Darlington configuration featuring 1 micron
emitters provides high F T and excellent thermal
SiGe HBT MMIC Amplifier
perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junc-
tions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation prod-
ucts. Only 2 DC-blocking capacitors, a bias resistor and
an optional RF choke are required for operation.

The matte tin finish on Sirenza’s lead-free package uti-


lizes a post annealing process to mitigate tin whisker Product Features
formation and is RoHS compliant per EU Directive 2002/ • Now available in Lead Free, RoHS
95. This package is also manufactured with green mold-
Compliant, & Green Packaging
ing compounds that contain no antimony trioxide nor
halogenated fire retardants. • High Gain : 20 dB at 1950 MHz
Gain & Return Loss vs. Frequency • Cascadable 50 Ohm
VD= 4.9 V, ID= 80 mA (Typ.) • Operates From Single Supply
32 0
GAIN • Low Thermal Resistance Package
24 -10
Return Loss (dB)

IRL
Gain (dB)

ORL
16 -20 Applications
8 -30 • PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
0 -40
0 1 2 3 4 5
• IF Amplifier
Frequency (GHz)
• Wireless Data, Satellite

S ymbol P arameter U nits Frequency Min. Typ. Max.


850 MHz 23.0 25.5 28.1
G S mall S i gnal Gai n dB 1950 MHz 20.0
2400 MHz 18.2
850 MHz 21.5
P 1dB Output P ower at 1dB C ompressi on dB m
1950 MHz 19.0
850 MHz 32.5
OIP 3 Output Thi rd Order Intercept P oi nt dB m
1950 MHz 32.0
B andwi dth D etermi ned by Return Loss (>9dB ) MHz 4000
IRL Input Return Loss dB 1950 MHz 13.1

ORL Output Return Loss dB 1950 MHz 9.2

NF Noi se Fi gure dB 1950 MHz 3.0

VD D evi ce Operati ng Voltage V 4.5 4.9 5.3

ID D evi ce Operati ng C urrent mA 72 80 88

RTH, j-l Thermal Resi stance (juncti on to lead) °C /W 97


VS = 8 V ID = 75 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Test Conditions:
RBIAS = 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com


1 EDS-101268 Rev. D
SGA-6589 DC-3500 GHz Cascadable MMIC Amplifier

Preliminary

Typical RF Performance at Key Operating Frequencies


Frequency
Frequency
Frequency (MHz)
(MHz)(MHz)
Symbol Parameter Unit 100 500 850 1950 2400 3500
G Small Signal Gain dB 28.4 27.1 25.2 19.8 18.2 15.1
OIP3 Output Third Order Intercept Point dBm 32.1 32.5 32.0 30.3
P1dB Output Power at 1dB Compression dBm 21.6 21.5 19 17.8
IRL Input Return Loss dB 13.9 15.0 15.6 13.1 12.4 11.4
ORL Output Return Loss dB 16.1 13.5 11.4 9.2 9.4 10.6
S12 Reverse Isolation dB 30.3 29.8 28.7 24.3 23.1 19.2
NF Noise Figure dB 2.5 2.5 2.9 3.3
VSS== 88 V
V V IIDD == 80
80 mA
mA Typ.
Typ. OIP33 Tone
OIP Tone Spacing
Spacing == 11 MHz,
MHz, Pout
Pout per
per tone
tone == 00 dBm
dBm
Test
TestConditions:
Conditions:
RBIAS
R = 39 Ohms
BIAS= 39 Ohms TTLL == 25ºC
25ºC ZZSS== ZZLL== 50
50 Ohms
Ohms

Absolute Maximum Ratings


Noise Figure vs. Frequency Parameter Absolute Limit
VD=4.9 V, ID= 80 mA Max. D evi ce C urrent (ID) 160 mA
5 Max. D evi ce Voltage (VD) 7V
Max. RF Input Power +16 dBm
4
Noise Figure (dB)

Max. Juncti on Temp. (TJ) +150°C

3 Operati ng Temp. Range (TL) -40°C to +85°C


Max. Storage Temp. +150°C
2 Operati on of thi s devi ce beyond any one of these li mi ts may
TL=+25ºC cause permanent damage. For reli able conti nous operati on,
1 the devi ce voltage and current must not exceed the maxi mum
operati ng values speci fi ed i n the table on page one.
Bi as C ondi ti ons should also sati sfy the followi ng expressi on:
0 IDVD < (TJ - TL) / RTH, j-l
0 0.5 1 1.5 2 2.5 3 Take i nto account out of band VSWR presented by devi ces
Frequency (GHz) such as SAW fi lters to determi ne maxi mum RF i nput power.
Reflected harmoni c levels i n saturati on are si gni fi cant.

OIP3 vs. Frequency P1dB vs. Frequency


VD= 4.9 V, ID= 80 mA VD= 4.9 V, ID= 80 mA
40 24

22
35
P1dB (dBm)
OIP3 (dBm)

20
30
18

25
16
TL=+25ºC TL=+25ºC
20 14
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Frequency (GHz) Frequency (GHz)

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com


2 EDS-101268 Rev. D
SGA-6589 DC-3500 GHz Cascadable MMIC Amplifier

Preliminary

|S | vs. Frequency
21
|S | vs. Frequency
11
VD= 4.9 V, ID= 80mA VD= 4.9 V, ID= 80 mA
32 0

24 -10
|S21| (dB)

|S11| (dB)
16 -20

8 -30
+25°C +25°C
TL -40°C TL -40°C
+85°C +85°C
0 -40
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)

|S | vs. Frequency
12
|S | vs. Frequency
22
VD= 4.9 V, ID= 80 mA VD= 4.9 V, ID= 80 mA
-10 0

-15 -10
|S12| (dB)

|S22| (dB)

-20 -20

-25 -30
+25°C +25°C
TL -40°C TL -40°C
+85°C +85°C
-30 -40
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)

* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com


3 EDS-101268 Rev. D
SGA-6589 DC-3500 GHz Cascadable MMIC Amplifier

Preliminary

Basic Application Circuit

Application Circuit Element Values


R BIAS
VS Frequency (Mhz)
Reference
Designator 500 850 1950 2400 3500
1 uF 1000 CD CB 220 pF 100 pF 68 pF 56 pF 39 pF
pF
CD 100 pF 68 pF 22 pF 22 pF 15 pF
LC
LC 68 nH 33 nH 22 nH 18 nH 15 nH
4
1 SGA-6589 3 Recommended Bias Resistor Values for ID=80mA
RF in RF out
RBIAS=( VS-VD ) / ID
CB 2 CB
Supply Voltage(VS) 6V 8V 10 V 12 V

RBIAS 12 39 62 91
Note: RBIAS provides DC bias stability over temperature.
VS
1 uF
RBIAS
1000 pF Mounting Instructions
CD 1. Solder the copper pad on the backside of the
A65 LC
device package to the ground plane.
2. Use a large ground pad area with many plated
CB CB
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.

Pin # Function Description


1 RF IN RF input pin. This pin requires the use
of an external DC blocking capacitor
Part Identification Marking
chosen for the frequency of operation.
4 4 2, 4 GND Connection to ground. For optimum RF
performance, use via holes as close to

A65 A65Z ground leads as possible to reduce lead


inductance.
3 RF OUT/ RF output and bias pin. DC voltage is
BIAS present on this pin, therefore a DC
2

1 2 3 1 2 3
1

blocking capacitor is necessary for


proper operation.

Caution: ESD sensitive Part Number Ordering Information


Appropriate precautions in handling, packaging
and testing devices must be observed.
Part Number Reel Size Devices/Reel
See Application Note AN-075 SGA-6589 13" 3000
for Package Outline Drawing SGA-6589Z 13" 3000

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com


4 EDS-101268 Rev. D