2N7000KL/BS170KL

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) rDS(on) (Ω) VGS(th) (V) ID (A)
• TrenchFET® Power MOSFET
Pb-free
• ESD Protected: 2000 V Available
2 at VGS = 10 V 0.47
60 1.0 to 2.5 RoHS*
4 at VGS = 4.5 V 0.33 APPLICATIONS COMPLIANT

• Direct Logic-Level Interface: TTL/CMOS

• Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
• Battery Operated Systems

TO-226AA TO-92-18RM
(TO-92) (TO-18 Lead Form) D

S 1 Device Marking D 1 Device Marking

Front View Front View 100
“S” 2N “S” BS G
G 2 7000KL G 2 170KL
xxyy xxyy

“S” = Siliconix Logo “S” = Siliconix Logo

D S
3 xxyy = Date Code 3 xxyy = Date Code

Top View Top View S

Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1

2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 0.47
Continuous Drain Current (TJ = 150 °C)b ID
TA = 70 °C 0.37 A
Pulsed Drain Currenta IDM 1.0
TA = 25 °C 0.8
Power Dissipation PD W
TA = 70 °C 0.51
Maximum Junction-to-Ambient RthJA 158 °C/W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Notes:
a. Pulse width limited by maximum junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72705 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 2.0 2.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V ±1
VDS = 60 V, VGS = 0 V 1 µA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10
VGS = 10 V, VDS = 7.5 V 0.8
On-State Drain Currentb ID(on) A
VGS = 4.5 V, VDS = 10 V 0.5
VGS = 10 V, ID = 0.5 A 1.1 2
Drain-Source On-Resistanceb rDS(on) Ω
VGS = 4.5 V, ID = 0.2 A 1.6 4
Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 550 ms
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V
Dynamicb
Total Gate Charge Qg 0.4 0.6 nC
VDS = 10 V, VGS = 4.5 V
Gate-Source Charge Qgs 0.11
ID ≅ 0.25 A
Gate-Drain Charge Qgd 0.15 pF
Gate Resistance Rg 173
td(on) 3.8 10
Turn-On Time
tr VDD = 30 V, RL = 150 Ω 4.8 15
ns
td(off) ID ≅ 0.2 A, VGEN = 10 V, RG = 10 Ω 12.8 20
Turn-Off Time
tf 9.6 15
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.0 1.2
6V
VGS = 10, 7 V TJ = - 55 °C
0.8 5V
0.9
I D - Drain Current (A)
I D - Drain Current (A)

25 °C
0.6 125 °C
0.6

0.4 4V

0.3
0.2

3V

0.0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 72705

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 2N7000KL/BS170KL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0 40

3.5 VGS = 0 V
32
r DS(on) - On-Resistance (Ω)

3.0

C - Capacitance (pF)
2.5
24 Ciss

2.0 VGS = 4.5 V

16
1.5 VGS = 10 V

1.0 Coss
8
Crss
0.5

0.0 0
0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25

ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

7 2.0

6 VDS = 10 V VGS = 10 V at 500 mA

ID = 250 mA
VGS - Gate-to-Source Voltage (V)

1.6
5
rDS(on) - On-Resistance
(Normalized)

1.2 VGS = 4.5 V

4
at 200 mA

3
0.8

2
0.4
1

0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

1000 5

VGS = 0 V
4
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)

100
3
TJ = 125 °C

2 ID = 500 mA
10 TJ = 25 °C
ID = 200 mA
1
TJ = - 55 °C

1 0
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage

Document Number: 72705 www.vishay.com

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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 20

0.2
16
ID = 250 µA
V GS(th) Variance (V)

0.0

Power (W)
12

- 0.2

8
- 0.4
TA = 25 °C
4
- 0.6

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Junction Temperature (°C) Time (s)
Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient

10
IDM Limited
Limited by rDS(on)*
1
I D - Drain Current (A)

1 ms
10 ms
0.1 ID(on) 100 ms
Limited 1s

10 s
0.01 DC
TA = 25 °C
Single Pulse
BVDSS Limited

0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 350 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72705.

www.vishay.com Document Number: 72705

4 S-72202-Rev. B, 22-Oct-07
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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Revision: 18-Jul-08 1