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Cathode Gate
Anode
Introduction
Cathode Gate
Anode
Introduction
Cathode
Gate
Module
Anode
Introduction
Cathode
Gate
Module
Anode
Disk/Puck
Introduction
Cathode
Gate
Module
Anode
Disk/Puck
Introduction
“Highest
power-‐handling
capability
(more
than,
7
kV,
4
kA).
They
are
among
the
largest
semiconductor
devices
made
(10
cm
diameter)”
Introduction
Introduction
Introduction
A bank of six 2000 A thyristors (white disks arranged in a row at top, and seen edge-on)
Thyristor Symbol
Thyristor Symbol
J1
J2
J3
Thyristor Operation
J1
J2
J3
Thyristor Operation
1)
When
anode
is
posi)ve
compare
to
cathode
junc)on
J1
and
J3
are
forward
biased,
but
J2
is
reversed
biased
(blocking
mode)
and
there
small
forward
leakage
current.
Thyristor Operation
“Opera)on
of
thyristor
can
be
modelled
by
two
transistor
model.“
The
regenera)ve
or
latching
ac)on
due
to
posi)ve
feedback
(thyristor
keep
ON
state
even
gate
signal
is
removed)”
Conditions that can turn ON a Thyristor
Switch
ON
using
gate
signal
-‐
Applying
posi)ve
voltage
on
gate
terminal
would
turn
ON
thyristor.
(Main
method)
Conditions that can turn ON a Thyristor
Switch
ON
using
gate
signal
-‐
Applying
posi)ve
voltage
on
gate
terminal
would
turn
ON
thyristor.
(Main
method)
High
voltage
-‐
if
forward
voltage
>>
VBO
diode
will
conduct,
but
this
is
destruc)ve
and
should
be
avoided.
Conditions that can turn ON a Thyristor
Switch
ON
using
gate
signal
-‐
Applying
posi)ve
voltage
on
gate
terminal
would
turn
ON
thyristor.
(Main
method)
High
voltage
-‐
if
forward
voltage
>>
VBO
diode
will
conduct,
but
this
is
destruc)ve
and
should
be
avoided.
Light
-‐
if
light
strike
junc)on;
create
electron-‐hole
pairs;
turn-‐on
thyristor
Conditions that can turn ON a Thyristor
Switch
ON
using
gate
signal
-‐
Applying
posi)ve
voltage
on
gate
terminal
would
turn
ON
thyristor.
(Main
method)
High
voltage
-‐
if
forward
voltage
>>
VBO
diode
will
conduct,
but
this
is
destruc)ve
and
should
be
avoided.
Light -‐ if light strike junc)on; create electron-‐hole pairs; turn-‐on thyristor
Thermals
-‐
if
temperature
is
high;
increase
number
of
electron-‐hole
pairs;
turn-‐on
thyristor
Conditions that can turn ON a Thyristor
Switch
ON
using
gate
signal
-‐
Applying
posi)ve
voltage
on
gate
terminal
would
turn
ON
thyristor.
(Main
method)
High
voltage
-‐
if
forward
voltage
>>
VBO
diode
will
conduct,
but
this
is
destruc)ve
and
should
be
avoided.
Light -‐ if light strike junc)on; create electron-‐hole pairs; turn-‐on thyristor
Thermals
-‐
if
temperature
is
high;
increase
number
of
electron-‐hole
pairs;
turn-‐on
thyristor
dv/dt
–
if
the
rate
rise
of
anode
cathode
voltage
quite
high,
this
can
cause
charging
current
of
the
capaci)ve
junc)ons
large
enough
to
turn
on
the
thyristor.
A
high
value
charging
current
can
damage
the
thyristor.
Turn ON using gate terminal
J1
J2
J3
Applying
posi)ve
voltage
around
gate
and
cathode
terminal
would
turn
on
thyristor.
As
gate
current
increases
the
forward
blocking
decreases.
Summary
“A
thyristor
is
iden)cal
to
power
diode
with
an
addi)onal
gate
terminal
that
allow
us
to
control
to
turn
ON
only
in
forward
biased
condi)on.
Once
turn
ON
will
con)nue
to
turn
ON
unless
the
supply
is
reversed
biased.”
Example
If
the
latching
current
in
the
circuit
below
is
4mA,
obtain
the
minimum
width
of
the
ga)ng
pulse
required
to
properly
turn
on
the
thyristor?
Example
If
the
latching
current
in
the
circuit
below
is
4mA,
obtain
the
minimum
width
of
the
ga)ng
pulse
required
to
properly
turn
on
the
thyristor?
Example
If
the
latching
current
in
the
circuit
below
is
4mA,
obtain
the
minimum
width
of
the
ga)ng
pulse
required
to
properly
turn
on
the
thyristor?
di/dt protection
A
thyristor
requires
a
minimum
)me
to
spread
the
current
conduc)on
uniformly
throughout
the
junc)ons.
If
anode
current
is
very
fast
compare
to
spreading
velocity
of
a
turn
on
process,
a
localized
hot
spot
hea)ng
will
occur.
Device
might
fail
due
to
excessive
temperature.
di/dt
is
limited
by
adding
series
inductor.
di Vs
=
dt Ls
dv/dt protection
If
switch
is
closed
at
t=0,
a
step
voltage
will
be
applied
across
thyristor
T1
and
dv/
dt
maybe
high
enough
to
turn
on
the
thyristor
connected.
dv 0.632Vs
=
dt Rs Cs
Thyristor turn off
1)
Turn
off
by
reducing
forward
current
<
IH
or
changing
the
supply
polarity.
2)
Similar
to
a
diode
turn
off
characteris)c
(junc)on
J1
and
J3)
with
reverse
recovery
)me
tRR
and
peak
reverse
recovery
current
IRR.
Use
similar
equa)on
like
diode
for
finding
tRR
and
IRR.
3)
The
reverse
recovery
voltage
start
appear
immediately
aWer
forward
current
goes
to
zero.
4)
Inner
junc)on
J2
require
recombina)on
)me
trc
to
recombine
excess
carrier.
trc
is
dependent
on
magnitude
of
reverse
voltage.
6)
Turn
off
)me,
tq
is
dependent
on
peak
value
of
on
state
current
and
the
instantaneous
on
state
voltage.
Thyristor turn off
6)
Reverse
recovery
charge
QRR
is
the
amount
of
charge
which
has
to
be
recovered
during
turn
off
process.
Value
depent
on
rate
of
fall
on
state
current
and
peak
value
on
state
current
before
turn
off.
QRR
contribute
to
switching
losses.
Thyristor turn off
Thyristor types
2) tq in order 50 to 100us, on state voltage in between 1.15V to 2.5V.
3)
Modern
thyristor
used
an
amplifying
gate.
This
permit
high
dynamic
characteris)c
of
di/dt
and
dv/dt
limita)on.
2)
tq
in
order
5
to
50us,
on
state
voltage
typically
about
1.7V.
High
dv/dt
(1000V/us)
and
di/dt
(1000A/us).
3)
Other
fast
thyristor
known
as
inverter
thyristor
has
low
tq
in
order
3
to
5us,
but
low
reverse
blocking
capability
10V.
Gate turn off thyristor (GTO)
1)
GTO
has
addi)onal
capability
than
normal
SCR
thyristor
that
is
the
ability
to
turn
off
by
applying
short
nega)ve
pulse
to
the
gate.
3)
For
low
power
applica)on
advantage
GTO
over
bipolar
transistor
are;
higher
blocking
voltage,
high
ra)on
of
peak
controllable
current
to
average
current,
high
ra)on
of
peak
surge
current
to
average
current,
high
on
state
gain
and
short
dura)on
pulse
gate
signal.
Gate turn off thyristor (GTO)
4)
Disadvantages-‐
has
higher
on
state
voltage
of
about
3.4V
and
rela)vely
high
nega)ve
current
pulse
to
turn
off.
Bidirectional Thyristor TRIAC
1)
TRIAC
is
a
bidirec)onal
devices
thus
can
conduct
in
both
direc)on.
Bidirectional Thyristor TRIAC
2)
When
MT2
is
posi)ve
compare
to
MT1
-‐
the
TRIAC
can
be
turn
on
by
applying
posi)ve
gate
signal.
T2
will
conduct.
+
Bidirectional Thyristor TRIAC
+
2)
When
MT1
is
posi)ve
compare
to
MT2
the
TRIAC
can
be
turn
on
by
applying
posi)ve
gate
signal.
T2
will
conduct.
2)
Unlike
diode,
thyristor
requires
voltage
sharing
for
both
reverse
and
off
state
condi)ons.
Series Connection
3)
This
is
accomplish
by
connec)ng
resistor
across
each
thyristor.
2)
Solved
by
adding
small
resistor
but
this
will
increase
conduc)on
losses.
Parallel Connection
3)
Common
solu)on:
magne)cally
couple
inductor.
4)
If
current
through
T1
increases,
a
voltage
of
opposite
polarity
will
induced
in
winding
T2.
This
reduce
impedance
in
T2
thus
balances
the
current
flow.
Firing Circuits
The
power
circuit
usually
held
at
100V
or
greater
while
the
gate
circuit
held
typically
at
12V
to
30V.
Two
way
to
achieve
this
by
isola)on
through
opto-‐coupler
or
transformer.
Opto-‐coupler
required
separate
power
supply
thus
increase
cost
and
weight
of
firing
circuit.