MG400J2YS60A

TOSHIBA IGBT Module Silicon N Channel IGBT

MG400J2YS60A(600V/400A 2in1)
High Power Switching Applications
Motor Control Applications

· Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
· The electrodes are isolated from case.
· Low thermal resistance
· VCE (sat) = 1.8 V (typ.)

Equivalent Circuit

Ｃ1

5
6 FO
7 E1/C2

4 OT
1
2 FO
3

E2

Signal terminal
1. G (L) 2. FO (L) 3. E (L) 4. VD
5. G (H) 6. FO (H) 7. E (H) 8. Open

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Package Dimensions: 2-123C1B

1. G (L) 2. FO (L) 3. E (L) 4. VD

5. G (H) 6. FO (H) 7. E (H) 8. Open

Signal Terminal Layout

7 8
5 6
2.54

25.4 ± 0.6

1. G (L) 2. FO (L) 3. E (L) 4. VD

5. G (H) 6. FO (H) 7. E (H) 8. Open

3 4
1 2
2.54

2.54

Weight: 375 g

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Maximum Ratings (Ta = 25°C)

Stage Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 600 V

Gate-emitter voltage VGES ±20 V
DC IC 400
Collector current A
Inverter 1 ms ICP 800
DC IF 400
Forward current A
1 ms IFM 800
Collector power dissipation (Tc = 25°C) PC 2160 W
Control voltage (OT) VD 20 V
Control Fault input voltage VFO 20 V
Fault input current IFO 20 mA
Junction temperature Tj 150 °C
Storage temperature range Tstg -40~125 °C
Module Operation temperature range Tope -20~100 °C
Isolation voltage Visol 2500 (AC 1 min) V
Screw torque ¾ 3 (M5) N･m

Electrical Characteristics (Tj = 25°C)

1. Inverter Stage

Characteristics Symbol Test Condition Min Typ. Max Unit

VGE = ±20 V, VCE = 0 ¾ ¾ +3/-4 mA

Gate leakage current IGES
VGE = +10 V, VCE = 0 ¾ ¾ 100 nA
Collector cut-off current ICES VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA
Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 400 mA 5.0 6.5 8.0 V

VGE = 15 V, Tj = 25°C ¾ 1.8 2.1

Collector-emitter saturation voltage VCE (sat) V
IC = 400 A Tj = 125°C ¾ ¾ 2.3
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ¾ 3500 ¾ pF
Turn-on delay time td (on) 0.10 ¾ 1.00
Switching time Turn-off time toff VCC = 300 V, IC = 400 A ¾ ¾ 2.00
VGE = ±15 V, RG = 7.5 W ms
Fall time tf (Note 1) ¾ ¾ 0.50
Reverse recovery time trr ¾ ¾ 0.50
Forward voltage VF IF = 400 A ¾ 1.8 2.2 V

Note 1: Switching time test circuit & timing chart

2. Control (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Fault output current OC VGE = 15 V 480 ¾ ¾ A

Over temperature OT ¾ 100 ¾ 125 °C
Fault output delay time td (Fo) VCC = 300 V, VGE = ±15 V ¾ ¾ 6.5 ms

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3. Module (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Inverter IGBT stage ¾ ¾ 0.057

Junction to case thermal resistance Rth (j-c) °C/W
Inverter FRD stage ¾ ¾ 0.068
Case to fin thermal resistance Rth (c-f) With silicon compound ¾ 0.013 ¾ °C/W

Switching Time Test Circuit

RG
IF
-VGE

VCC
IC L

RG

Timing Chart

VGE 90%

10%

90% Irr
Irr 20% Irr
IC 90%
trr

10% 10%

td (on) td (off) tf

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Remark
<Short circuit capability condition>
l Short circuit capability is 6 ms after fault output signal.
Please keep following condition to use fault output signal.
· VCC < = 375 V
· 13.8 V = < VGE <
= 16.0 V
>
· RG = 7.5 W
· Tj <= 50°C

<Gate voltage>
l To use this product, VGE must be provided higher than 13.8 V.
In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.

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IC – VCE IC – VCE
800 400
10 V
Common emitter 12 V 15 V
Tj = 25°C 9V
VGE = 20 V 12 V
(A)

(A)
600 300
VGE = 20 V 15 V
IC

IC
Collector current

Collector current
400 200

8V
10 V

200 100

9V Common emitter
Tj = 125°C
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

VCE – VGE VCE – VGE

12 12
Common emitter Common emitter
Tj = 25°C Tj = 125°C
(V)
(V)

10 10
VCE
VCE

8 8
Collector-emitter voltage
Collector-emitter voltage

6 6

4 4

IC = 600 A IC = 600 A
2 2

200 A 200 A
400 A 400 A
0 0
0 5 10 15 20 0 5 10 15 20

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

VCE – VGE IC – VGE

12 800
Common emitter
Common emitter
Tj = -40°C
(V)

10 VCE = 5 V
(A)
VCE

600

8
IC
Collector-emitter voltage

Collector current

6 400
25°C

4 Tj = 125°C
IC = 600 A 200

2 -40°C
200 A
400 A
0 0
0 5 10 15 20 0 4 8 12

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

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IF – VF VCE, VGE – QG
800 500 20
Common emitter
Common cathode RL = 0.75 W

(V)
VGE = 0 V Tj = 25°C

(V)
400 16

VCE
(A)

600

Gate-emitter voltage VGE

Forward current IF

Collector-emitter voltage
300 12
Tj = 25°C 600 V
400

200 200 V VCE = 0 V 8

400 V
200 125°C
-40°C 100 4

0 0 0
0 0.5 1 1.5 2 2.5 3 0 1000 2000 3000 4000

Forward voltage VF (V) Charge QG (nC)

SW time – RG Eon, Eoff – RG

10000 100
Common emitter, VCC = 300 V Eon
IC = 400 A Tj = 25°C
VGE = ±15 V Tj = 125°C
(mJ)

Eoff

toff
(ns)

ton
SW loss Eon, Eoff

td (on)
SW time

1000
td (off)

tr
Common emitter
VCC = 300 V
IC = 400 A Tj = 25°C
tf
VGE = ±15 V Tj = 125°C
100 10
0 5 10 15 20 25 0 5 10 15 20 25

Gate resistance RG (9) Gate resistance RG (9)

SW time – IC Eon, Eoff – IC

10000 100
Common emitter
VCC = 300 V
RG = 7.5 W Tj = 25°C Eon
(mJ)

VGE = ±15 V Tj = 125°C

toff
(ns)

SW loss Eon, Eoff

Eoff
SW time

1000 10
td (off)
ton

td (on) Common emitter

tf
VCC = 300 V
RG = 7.5 W Tj = 25°C
tr VGE = ±15 V Tj = 125°C
100 1
0 100 200 300 400 0 100 200 300 400

Collector current IC (A) Collector current IC (A)

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Irr, trr – IF Edsw – IF

1000 10

(mJ)
Reverse recovery current Irr (A)
Reverse recovery time trr (ns)

trr

Reverse recovery loss Edsw

100 1

Irr

Common cathode Common cathode

VCC = 300 V VCC = 300 V
RG = 7.5 W Tj = 25°C RG = 7.5 W Tj = 25°C
VGE = ±15 V Tj = 125°C VGE = ±15 V Tj = 125°C
10 0.1
0 100 200 300 400 0 100 200 300 400

Forward current IF (A) Forward current IF (A)

C – VCE
1000000

Cies
(pF)

100000
Capacitance C

10000

Coes
1000

Cres

100
0.01 0.1 1 10 100 1000

Collector-emitter voltage VCE (V)

Reverse bias SOA

1000

Rth – tw
1
Tc = 25°C
(A)
IC

Diode stage
(°C/W)
Collector current

0.1
100
Rth (j-c)

Transistor stage

0.01

Tj <
= 125°C
RG = 7.5 W
VGE = ±15 V
10 0.001
0 200 400 600 0.001 0.01 0.1 1 10

Collector-emitter voltage VCE (V) Pulse width tw (s)

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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