SuperSOT

FMMT617 FMMT618
SOT23 NPN SILICON POWER FMMT619 FMMT624
FMMT625
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
* IC CONT 3A
E
* 12A Peak Pulse Current C
* Excellent HFE Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
B
* Extremely Low Equivalent On Resistance; RCE(sat)

DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)

FMMT617 FMMT717 617 50mΩ at 3A
FMMT618 FMMT718 618 50mΩ at 2A
FMMT619 FMMT720 619 75mΩ at 2A
FMMT624 FMMT723 624 -
FMMT625 – 625 -

ABSOLUTE MAXIMUM RATINGS.

FMMT FMMT FMMT FMMT FMMT
PARAMETER SYMBOL 617 618 619 624 625 UNIT

Collector-Base Voltage VCBO 15 20 50 125 150 V

Collector-Emitter Voltage VCEO 15 20 50 125 150 V

Emitter-Base Voltage VEBO 5 5 5 5 5 V

Peak Pulse Current** ICM 12 6 6 3 3 A

Continuous Collector Current IC 3 2.5 2 1 1 A

Base Current IB 500 mA

Power Dissipation at Tamb=25°C* Ptot 625 mW

Operating and Storage Temperature Tj:Tstg -55 to +150 °C

Range

* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices

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 FMMT624
FMMT619 FMMT625
TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1 FMMT624 FMMT625
+25°C
PARAMETER SYMBOL UNIT CONDITIONS.
0.6
IC/IB=40
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base V(BR)CBO 125 250 150 300 V IC=100µA
100m
Breakdown Voltage
100°C
0.4 25°C
Collector-Emitter V(BR)CEO 125 160 150 175 V IC=10mA*
-55°C
Breakdown Voltage
10m
IC/IB=100
0.2
IC/IB=50
IC/IB=10
Emitter-Base V(BR)EBO 5 8.3 5 8.3 V IE=100µA
Breakdown Voltage
1m 0.0 Collector Cut-Off ICBO 100 nA VCB=100V
1m 10m 100m 1 10 1mA 10mA 100mA 1A 10A Current 100 nA VCB=130V

IC - Collector Current (A) Collector Current Emitter Cut-Off IEBO 100 100 nA VEB=4V
Current
VCE(sat) v IC VCE(SAT) vs IC
Collector Emitter ICES 100 nA VCES=100V
Cut-Off Current 100 nA VCES=130V

100°C 1.2 Collector-Emitter VCE(SAT) 26 50 26 50 mV IC=0.1A, IB=10mA*

VCE=2V IC/IB=40
1.2 Saturation Voltage 110 200 mV IC=0.1A, IB=1mA*
1.0 70 150 mV IC=0.5A, IB=50mA*
1.0 450
25°C
160 220 mV IC=0.5A, IB=10mA*
0.8 -55°C
165 250 180 300 mV IC=1A, IB=50mA*
0.8
25°C
0.6 Base-Emitter VBE(SAT) 0.85 1.0 0.85 1.0 V IC=1A, IB=50mA*
0.6 100°C
-55°C 225 Saturation Voltage
0.4 0.4
Base-Emitter VBE(ON) 0.7 1.0 0.74 1.0 V IC=1A, VCE=10V*
0.2 0.2 Turn-On Voltage
0.0 0 0.0 Static Forward hFE 200 400 200 400 IC=10mA, VCE=10V*
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Current Transfer 300 450 300 450 IC=0.2A, VCE=10V*
Ratio 100 140 30 45 IC=1A, VCE=10V*
Collector Current Collector Current 18 15 IC=3A, VCE=10V*
HFE vs IC VBE(SAT) vs IC Transition fT 100 155 100 135 MHz IC=50mA, VCE=10V
Frequency f=100MHz

10 SINGLE PULSE TEST Tamb = 25 deg C Output Capacitance COBO 7 15 6 10 pF VCB=10V, f=1MHz
VCE =2V
1.0 Turn-On Time t(ON) 60 160 ns VCC=50V, IC=0.5A
IB1=-IB2=50mA
0.8 Turn-Off Time t(OFF) 1300 1500 ns
-55°C
1.0
0.6 25°C
D.C.
1s *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
100ms
10ms
100°C 1ms
0.4 100µs
0.1

0.2

0.0 0.01
1mA 10mA 100mA 1A 10A 0.1 1 10 100

Collector Current VCE (VOLTS)

VBE(ON) vs IC Safe Operating Area

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FMMT624 FMMT625
TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS
25 °C IC/I B=20
25 °C IC/IB=20
0.5 0.5 0.5
0.5
0.4 0.4 0.4
0.4
0.3 IC/IB =50
0.3 0.3
IC/IB =20
100°C
IC/IB=100 0.3
IC/IB =10 IC/IB=20 100°C
0.2 0.2 25°C
0.2 IC/IB=10
25°C
-55°C 0.2
-55°C
0.1 0.1
0.1 0.1
0.0 0.0
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A 0.0 0.0
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
Collector Current Collector Current
Collector Current Collector Current
VCE(SAT) vs IC VCE(SAT) vs IC
VCE(SAT) vs IC VCE(SAT) vs IC

1.0
VCE =10V IC/IB=20 1.0
1.2 VCE=10V IC /IB =20
100°C -55°C 1.2 100°C

450 0.8 -55°C

1.0 0.8
25°C 1.0 450
25°C
0.8 25°C 0.6 25°C
100°C 0.8 0.6
100°C
0.6
225 0.4 0.6
-55°C
225 0.4
0.4 -55°C

0.4
0.2
0.2 0.2
0.2
0.0 0.0 0.0 0.0
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
Collector Current Collector Current

hFE vs IC VBE(SAT) vs IC Collector Current Collector Current

hFE vs IC VBE(SAT) vs IC

1.2 10 SINGLE PULSE TEST Tamb = 25 deg C SINGLE PULSE TEST Tamb = 25 deg C
VCE =10V 10
VCE =10V
1.0 1.0
-55°C
0.8 1.0 0.8
-55°C
1.0
25°C
0.6 25°C
0.6
100°C
100°C
0.4 0.1 D.C. 0.4 0.1
1s D.C.

0.2 100ms
10ms 0.2
1s
100ms
1ms 10ms
100µs
0.0 0.01 1ms
100µs
1mA 10mA 100mA 1A 10A 1.0 10 100 1000 0.0 0.01
1mA 10mA 100mA 1A 10A 1 10 100 1000
Collector Current VCE (VOLTS)
Collector Current VCE (VOLTS)
VBE(ON) vs IC Safe Operating Area VBE(ON) vs IC Safe Operating Area

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FMMT617 FMMT624 FMMT717 FMMT722
FMMT618 FMMT625 SuperSOT Series FMMT718 FMMT723
FMMT619 FMMT720

THERMAL CHARACTERISTICS AND DERATING INFORMATION

DERATING CURVE

MAXIMUM TRANSIENT THERMAL RESISTANCE

* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate

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