TM

BTB12-600BW
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

Passivated high commutation triacs in a plastic envelope intended for use in circuits where
high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the
full rated ms current at the maximum rated junction temperature without the aid of a snubber.

Symbol Simplified outline

Applications:
T2 T1
Motor control
Industrial and domestic lighting
G 12 Heating
3
TO-220 Static switching
Pin Description
1 Main terminal 1 (T1)
Features
2 Main terminal 2 (T2) Blocking voltage to 600 V
3 gate (G) On-state RMS current to 12 A

TAB Main terminal 2 (T2)

SYMBOL PARAMETER Value Unit

V DRM Repetitive peak off-state voltages 600 V

IT RMS RMS on-state current full sine wave 12 A

Non-repetitive peak on-state current
I TSM (full cycle,Tj initial=25 ) 126 A

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

Rth( j-c)
Junction to case(AC) - 1.4 - /W

Rth( j-a) Junction to ambient - 60 - /W

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 TM
BTB12-600BW
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Limiting values in accordance with the Maximum system(IEC 134)

SYMBOL PARAMETER CONDITIONS MIN Value UNIT
Non repetitive surge peak tp=10ms Tj=25 - V DRM/V RRM
V DSM/V RSM V
off-state voltage +100
I T(RMS) RMS on-state current full sine wave;Tc=105 - 12 A

Non repetitive surge full cycle,

I TSM Tj initial= 25 F=50Hz t=20ms - 120 A
peak on-state current
F=60Hz t=16.7ms - 126 A
I 2t 2
I t Value for fusing tp=10ms - 78 A 2S

dI/dt Critical rate of rise of

I G=2x I GT,tr<=100ns F=120Hz Tj=125 - 50 A/ s
on-state current

I GM Peak gate current tp=20us Tj=125 - 4 A

I DRM V DRM=V RRM Tj=25 - 5 A
I RRM V DRM=V RRM Tj=125 - 1 mA
P G(AV) Average gate power dissipation Tj=125 - 1 W
T stg Storage junction temperature range -40 150
Operating junction
Tj Temperature range
-40 125

O
T J=25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Static characteristics

I GT(1) V D=12V; R L=30

I-II-III - - 50 mA
V GT I-II-III 1.3 V

IL I G=1.2 I GT
I-III - - 70
mA
II - - 80

I H(2) I T=100mA - - 50 mA
V GD V D=V DRM R L=3.3K Tj=125 I-II-III 0.2 - - V

dV/dt(2) V D=67%V DRM gate open;Tj=125 1000 - - V/ s

(dI/dt)c(2) without snubber Tj=125 12 - - A/ms

Dynamic Characteristics

V T(2) l TM=17A tp=380 s Tj=25 - - 1.55 V

V to(2) Threshold voltage Tj=125 0.85 V

Dynamic resistance - -
R d(2) Tj=125 35 m

Note 1: minimum I GT is guaranted at 5% of I GT max.

Note 2: for both polarities of A2 referenced to A1.

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 TM
BTB12-600BW
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

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 TM
BTB12-600BW
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

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 TM
BTB12-600BW
HPM Three quadrant triacs
HAOPIN MICROELECTRONICS CO.,LTD.

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

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