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S/o Ziauddin
Current Residential address Permanent address
310 HUNG DORM 857, Katra Hiddu, Farash Khana,
NTHU, No. 101, Section 2, Guangfu Road, East District, Delhi-110006, India
Hsinchu City, 300, TAIWAN Tel: +91-9313584185
Tel: +886-905439391
PASSPORT NO: L6742296
ARC NO: OC30038232
:: hasanziauddin@gmail.com
OBJECTIVE
Seeking a challenging work, beneficial learning experience and an opportunity to put my knowledge as to
achieve growth.
To take all the assignments as challenge in order to uplift and maintain the goodwill, dignity and
growth of the concern.
Challenging & growth oriented position in a professionally managed organization.
EDUCATIONAL QUALIFICATION
2012 (Jan-June) : Electrical Characterization of Quantum well laser under the Influence
JMI Of external magnetic field
Effect of low magnetic field on electrical characteristics of AlGaInP
MQW. Laser diode was studied, within the temperature range of interest.
The light output vs. current characteristics was measured. The results
show that the threshold current is increased while the optical output
power is decreased on application of the magnetic field.
Participated in Science Quiz competition for 2008 - 2009 at Centre for Science Education and
Communication, University of Delhi.
Participated in Science Quiz competition for 2008 - 2009 at Centre for Science Education and
Communication, University of Delhi.
Secretary of Department of Physics 2010 JMI.
Attended international conference IWPSD-2014 (International Workshop on Physics of
Semiconductor Devices).
Selected in prestigious CNRS Lab, Institut NEEL at France for M.Tech final Internship in 2014.
Awarded the position of Assistant Warden for Boys Hostel at Mohammad Ali Jauhar University ,
Rampur UP, India ( August 2016 – Present )
EXPERIENCE.
To integrate metal nanoparticle of suitable size and shape with proper arrangement on grapheme sheet which
may increase the quantum efficiency without affecting the optical length with the technique such as
(Thermal annealing, Electrochemical deposition technique, SCIL) on TFSC.
• To achieve light trapping effect even at longer wavelengths by using Graphene Sheet.
• To replace ITO with Graphene based – Transparent electrode.
• To investigate the usage of Graphene plasmonics for light trapping in optoelectronic devices .
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