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2D2-17 Proceedings of APMC 2012, Kaohsiung, Taiwan, Dec.

4-7, 2012

A 24-GHz Single-to-Balanced Multicoupled Line Bandpass Filter in


CMOS Technology
Chiou-Wen You and Yo-Shen Lin

Department of Electrical Engineering, National Central University, Chungli 320, Taiwan, R.O.C.

Abstract — In this work, on-chip single-to-balanced semiconductor IC process is capable of producing very fine
bandpass filter centered at 24 GHz is proposed. The functions of line/gap width with tight tolerance. In [8], a 77-GHz single-
bandpass filter and balun are integrated using a simple to-balanced bandpass filter is fabricated in CMOS. The GaAs
multicoupled line structure along with capacitive loadings. The
use of inductor is avoided such that very compact chip size can
pHEMT process [10] and the thin-film integrated passive
be achieved. It can be easily designed with the desired bandpass device technology [11] can also be used to realize single-to-
response and reference impedances through the conventional balanced bandpass filters with good performance. In addition,
filter synthesis techniques. Specifically, a 3rd-order single-to- the semiconductor IC process is capable of integrating
balanced bandpass filter design with a center frequency of 24 multiple functional blocks in a single chip to achieve circuit
GHz and a fractional bandwidth of about 15% is presented
using the 0.18-ȝm CMOS technology. The chip size is 0.533
size and cost minimization. If one may implement those
mm×0.443 mm and the corresponding electrical size is only novel multi-functional microwave components on chip, then
0.085Ȝg×0.07Ȝg at the center frequency. In addition, good the advantages of design-based integration and process-based
selectivity and balanced performance are obtained. integration can be combined and the maximal benefit for RF
Index Terms — Balun, bandpass filter, CMOS, coupled-line, frontend implementation can be achievable.
multicoupled line, single-to-balanced. In this work, a 24-GHz single-to-balanced bandpass filter
that integrated the functions of bandpass filter and balun is
I. INTRODUCTION implemented using the commercial 0.18-Ӵm CMOS process
so as to take the advantages of both design- and process-
Conventional microwave passive component designs are based integration technologies. The proposed on-chip single-
mostly based on transmission lines of half- or quarter- to-balanced bandpass filter is based on a multicoupled line
wavelength (ӳ/4) long, such that their circuit sizes are large, along with loaded capacitors in [4]. The use of an inductor is
especially for low frequency applications. Various works avoided because the on-chip inductor exhibits larger circuit
have been devoted to the size reduction of microwave passive size and lower quality factor compared to on-chip capacitors.
components. However, since these passive components are By loading the multicoupled line with the high-density on-
implemented with conductors and dielectrics, the minimal chip metal-insulator-metal (MIM) capacitor, the coupled-line
achievable circuit size is usually limited by the fabrication length can be made as short as ӳg/18. In this way, very
process, e.g. minimal line/gap width. For the further size compact circuit size as well as very wide upper stopband can
reduction of microwave passive components, one may count be achieved.
on the development of more advanced process technology,
but this always leads to an increase in cost. On the other hand,
the development of novel multi-functional microwave circuit II. CIRCUIT DESIGN AND IMPLEMENTATION
components provides a practical way for the further size Shown in Fig. 1 is the circuit structure of the on-chip
reduction beyond the process limit. The single-to-balanced single-to-balanced bandpass filter in this work, which
bandpass filter or balun filter [1]-[11] that integrates the effectively integrates the functions of balun, bandpass filter,
functions of bandpass filter and balun represents a good and the impedance matching network. It is based on the
example. Further integration of the RF switch is also capacitively loaded multicoupled line structure in [4]. Here,
demonstrated in [12]. In addition to the reduction in circuit in order to achieve good selectivity, a five-line coupled-line
size and power loss, due to the reduction of component count structure is used to achieve a 3rd-order bandpass response.
as well, the packaging cost for implementing the RF frontend The orientation of the capacitively loaded short-stub is
can also be reduced with some improvements on yield. properly arranged such that the outputs at Port 2 and Port 3
Most of the recent works on single-to-balanced bandpass will exhibit 180o phase difference. According to the design
filter or balun filter designs utilize the low-temperature co- method outlined in [4], the corresponding equivalent circuit
fired ceramic (LTCC) process to achieve effective circuit size model and equivalent filter prototype can be obtained as
reduction through the 3D layout [1], [3]-[4], [6]-[7], [9]. shown in Fig. 2. Based on them, the proposed single-to-
However, due to the larger fabrication error of the LTCC, it balanced bandpass filter can then be designed according to
is not quite suitable for the mass production of these circuits the conventional filter synthesis technique.
at millimeter-wave frequencies. On the other hand,

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2D2-17 Proceedings of APMC 2012, Kaohsiung, Taiwan, Dec. 4-7, 2012

Integrated into a single component order to achieve a compact circuit size, the electrical length
of the multicoupled line is selected as 19o at 24 GHz. The
required circuit parameters can then be solved based on the
equivalent circuit models in Fig. 2 and the conventional filter
Single-Ended Matching Balanced
BPF Balun Signal synthesis techniques as in the case of [5]. The geometrical
Signal Circuit
parameters are then obtained with the aid of the quasi-static
solver Ansoft Q3D and the full-wave simulator Ansoft HFSS.
(a)
Shown in Fig. 4 is the chip photograph of the proposed
single-to-balanced bandpass filter. The chip size is 0.533 mm
×0.443 mm, and the circuit size without pads is 0.426mm
×0.211 mm.

(b)
Fig. 1. (a) Functional representation and (b) circuit structure of
proposed single-to-balanced bandpass filter of 3rd-order.
Fig. 3. Illustration of the meshed ground plane for the
multicoupled line in CMOS.
ZSingle
ZBal/2 y35 ZBal/2
(Port 3)
-y13 (Port 1) -y12 -y24 (Port 2)

C5 C3 C1 C2 C4

y55-y35 y44+y24
y33+y13-y35 y11/2+y13 y11/2+y12 y22+y12+y24
(a)

Port1
ZSingle Fig. 4. Chip photograph of proposed single-to-balanced bandpass
Port3
J 35 J12 J 24
Port2 filter of 3rd-order. (Chip size: 0.533 mm ×0.443 mm.)
ZBal J13 ZBal

y55 C5 y33 C3 y11 C1 C1 y11 C2 y22 C4 y44 Shown in Fig. 5 are the measured and simulated results of
2 2 2 2
proposed single-to-balanced bandpass filter. The simulation
(b)
Fig. 2. (a) Equivalent circuit model and (b) equivalent filter is done by the full-wave simulator Ansoft HFSS. Good
prototype of proposed single-to-balanced bandpass filter of 3rd- agreement between measured and simulated results is
order. observed. According to Fig. 5(a), the measured in-band input
and output return losses are all better than 15 dB from 22.4 to
The single-to-balanced bandpass filter is implemented in 26.4 GHz. The measured in-band insertion loss is better than
the TSMC 0.18-Ӵm 1P6M CMOS technology. The 6 dB in the same frequency range, with a minimum insertion
multicoupled line is realized using the thin-film microstrip loss of 5.2 dB at 25.5 GHz. The higher insertion loss is
structure based on the metal layers M1 and M6. Due to the mainly due to the conductor loss associated with the
thin dielectric thickness between M1 and M6, a meshed multicoupled line. The measured bandwidth also becomes
ground plane at M1 is used to reduce the per-unit-length smaller compared to the designed value due to the presence
capacitance between the signal trace at M6 and the ground of power loss. As shown in Fig. 5(c), the in-band amplitude
plane at M1. In this way, a wider signal trace is required for a imbalance is better than 0.28 dB, and the phase imbalance is
given line impedance and a lower conductor loss can be within 5o. Notably, the measured upper stopband rejection is
obtained. Shown in Fig. 3 is the 3D view of part of the circuit better than 40 dB from 38.7 up to the highest measured
layout to illustrate the meshed ground plane used at M1. The frequency of 60 GHz for both Port 1 to 2 and Port 1 to 3.
single-to-balanced bandpass filter is designed with a center This is due to the additional transmission zero at around 40
frequency of 24 GHz, a fractional bandwidth of 25% for a GHz, which is caused by the non-adjacent line coupling
3rd-order 0.01-dB ripple Chebyshev response. The reference associated with the multicoupled line structure [10].
impedances at Port 1, 2, and 3 are all equal to 50 ohm. In

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2D2-17 Proceedings of APMC 2012, Kaohsiung, Taiwan, Dec. 4-7, 2012

ACKNOWLEDGEMENT
This work is support in part by the National Science
Council of Taiwan, R.O.C. under Grant NSC 100-2628-E-
Magnitude (dB)

008-010-MY3, the National Chip Implementation Center,


Taiwan, R.O.C., and the National Center for High-
Performance Computing, Taiwan, R.O.C..

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