BAPATLA ENGINEERING COLLEGE::BAPATLA(AUTONOMOUS)

ELECTRONICS AND COMMUNICATIONS

I ASSIGNMENT
TIME:40MIN
SECTION:A,B,C MAXIMUM MARKS:10

ONE MARKS QUESTIONS

1. Consider the hybrid-Π circuit, so that 𝐶𝑒 , 𝐶𝑐 may be neglected. Omit the none other elements
𝑉𝑐𝑒
in circuit. If the load resistance is 𝑅𝐿 ,calculate with and without millers theorem.
𝑉𝑏′𝑒

2. A single stage CE amplifier with typical hybrid-𝛱 values.What value of source resistance will
give a 3-dB frequency 𝑓𝐻 which give a) half value for 𝑅𝑠 =0, b) twice the value for 𝑅𝑠 =∞ does
these values depends on load resistance

3. A single stage CE amplifier is measured to have voltage gain-bandwidth 𝑓𝐻 of 5MHz with

𝑅𝐿 =500Ω.Assume ℎ𝑓𝑒 =100, 𝑔𝑚 =100mA/v, 𝑟𝑏𝑏′ =100Ω,𝐶𝑐 =1PF,𝑓𝑇 =400MHz.

a) Find the value of source resistance that will give required bandwidth

𝑉𝑜
b) With the value found in part a find midband voltage gain ⁄𝑉
𝑠

4. Derive voltage gain for emitter follower circuit at high frequencies using exact analysis.

5. For circuit shown Using miller’s theorem and approximated analysis compute the following
using hybrid-Π parameter model.

a) Upper 3-dB frequency of current gain 𝐴𝐼 = 𝐼𝐿 /𝐼𝐼

b) The magnitude of the voltage gain 𝐴𝑣𝑠 = 𝑣𝑜 /𝑣𝑠

 BAPATLA ENGINEERING COLLEGE::BAPATLA(AUTONOMOUS)
ELECTRONICS AND COMMUNICATIONS
I ASSIGNMENT
TIME:40MIN
SECTION:A,B,C MAXIMUM MARKS:10

6. Consider a single stage CE amplifier with the load resistor RL shunted by a capacitance CL.
𝑉
a) Prove that the internal voltage gain 𝐾 = 𝑉 𝑐𝑒 is
𝑏′𝑒

−𝑔𝑚 𝑅𝐿
𝐾=
1 + 𝑗𝜔(𝐶𝑐 + 𝐶𝐿 )𝑅𝐿

b) Prove that the 3-dB frequency is given by

1
𝑓𝐻 =
2𝜋(𝐶𝑐 + 𝐶𝐿 )𝑅𝐿

Provided that the following condition is satisfied:

𝑔𝑏′ 𝑒 𝑅𝐿 (𝐶𝑐 + 𝐶𝐿 ) ≫ 𝐶𝑒 + 𝐶𝑐 (1 + 𝑔𝑚 𝑅𝐿 )