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IRLR7833PbF
IRLU7833PbF
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
VDSS RDS(on) max Qg
Converters for Computer Processor Power 30V 4.5m: 33nC
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance D-Pak I-Pak
IRLR7833PbF IRLU7833PbF
l Fully Characterized Avalanche Voltage
and Current
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05/19/09
IRLR/U7833PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.6 4.5 VGS = 10V, ID = 15A f
––– 4.4 5.5
mΩ
VGS = 4.5V, ID = 12A f
VGS(th) Gate Threshold Voltage 1.4 ––– 2.3 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V
µA
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 66 ––– ––– S VDS = 15V, ID = 12A
Qg Total Gate Charge ––– 33 50
Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.7 ––– VDS = 16V
Qgs2 Post-Vth Gate-to-Source Charge ––– 2.1 ––– VGS = 4.5V
nC
Qgd Gate-to-Drain Charge ––– 13 ––– ID = 12A
Qgodr Gate Charge Overdrive ––– 9.9 ––– See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd) ––– 15 –––
Qoss Output Charge ––– 22 ––– nC VDS = 16V, VGS = 0V
td(on) Turn-On Delay Time ––– 14 ––– VDD = 15V, VGS = 4.5V f
tr Rise Time ––– 6.9 ––– ID = 12A
ns
td(off) Turn-Off Delay Time ––– 23 ––– Clamped Inductive Load
tf Fall Time ––– 15 –––
Ciss Input Capacitance ––– 4010 ––– VGS = 0V
Coss Output Capacitance ––– 950 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 470 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 530 mJ
IAR Avalanche Current c ––– 20 A
EAR Repetitive Avalanche Energy c ––– 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 140 f MOSFET symbol D
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 12A, VGS = 0V f
trr Reverse Recovery Time ––– 39 58 ns TJ = 25°C, IF = 12A, VDD = 15V
Qrr Reverse Recovery Charge ––– 37 55 nC di/dt = 100A/µs f
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR/U7833PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
3.0V 3.0V
100 2.8V 100 2.8V
BOTTOM 2.7V BOTTOM 2.7V
2.7V
2.7V
10 10
1000 2.0
ID = 30A
RDS(on) , Drain-to-Source On Resistance
VGS = 10V
ID, Drain-to-Source Current (A)
100 1.5
(Normalized)
T J = 175°C
T J = 25°C
10 1.0
VDS = 25V
≤60µs PULSE WIDTH
1.0 0.5
1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
100000 6.0
VGS = 0V, f = 1 MHZ
ID= 12A
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd 5.0 VDS= 24V
10000 4.0
Ciss
3.0
Coss
1000 2.0
Crss
1.0
100 0.0
1 10 100 0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC)
1000.00 10000
10.00 100
100µsec
T J = 25°C
1.00 10 1msec
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse 10msec
0.10 1
0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
150 2.5
LIMITED BY PACKAGE
100 ID = 250µA
ID , Drain Current (A)
1.5
75
1.0
50
0.5
25
0.0
0
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TC, Case Temperature (°C) T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
(Z thJC)
D = 0.50
Thermal Response
0.20
P DM
0.10
0.1
0.05 t1
SINGLE PULSE
0.02 t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
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IRLR/U7833PbF
15V 15000
ID
2500
V(BR)DSS
tp
0
25 50 75 100 125 150
Starting T J , Junction Temperature (°C)
Current Regulator
V GS
Same Type as D.U.T.
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
12V .2µF
.3µF
Fig 14a. Switching Time Test Circuit
+ VDS
V
D.U.T. - DS 90%
VGS
3mA
10%
IG ID VGS
Current Sampling Resistors td(on) tr t d(off) tf
Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms
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IRLR/U7833PbF
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
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IRLR/U7833PbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Special attention has been given to the power losses The power loss equation for Q2 is approximated
in the switching elements of the circuit - Q1 and Q2. by;
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the Ploss = Pconduction + Pdrive + Poutput
*
MOSFET, but these conduction losses are only about
one half of the total losses.
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www.irf.com 9
IRLR/U7833PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
OR
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10 www.irf.com
IRLR/U7833PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by Calculated continuous current based on maximum allowable
max. junction temperature. junction temperature. Package limitation current is 30A.
Starting TJ = 25°C, L = 2.6mH, RG = 25Ω,
When mounted on 1" square PCB (FR-4 or G-10 Material).
IAS = 20A. For recommended footprint and soldering techniques refer to
Pulse width ≤ 400µs; duty cycle ≤ 2%. application note #AN-994.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2009
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