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IR MOSFET - StrongIRFET™
D VDSS 200V
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
IRF200P222 TO-247AC Tube 25 IRF200P222
20 200
RDS(on) , Drain-to -Source On Resistance (m)
18 ID = 82A 180
16 160
140
ID , Drain Current (A)
14
120
12
TJ = 125°C 100
10
80
8
60
6 TJ = 25°C
40
4 20
2 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature
Final Datasheet Please read the important Notice and Warnings at the end of this document V1.0
www.infineon.com 2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Table of Contents
Table of Contents
Applications …..………………………………………………………………………...……………..……………1
Benefits …..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1 Parameters ………………………………………………………………………………………………3
2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
3 Electrical characteristics ………………………………………………………………………………5
4 Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………14
Qualification Information ……………………………………………………………………………………………15
Revision History …………………………………………………………………………………………..…………16
1 Parameters
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 50, IAS = 82A, VGS =10V.
ISD 82A, di/dt 2290A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V.
3 Electrical characteristics
Table 5 Static characteristics
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 200 - - V
Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2mA - 0.1 - V/°C
Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 82A - 5.3 6.6 m
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 270µA 2.0 - 4.0 V
VDS = 160V, VGS = 0V - - 1.0
Drain-to-Source Leakage Current IDSS µA
VDS = 160V,VGS = 0V,TJ =125°C - - 100
Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA
Gate Resistance RG - 1.3 -
IS - - 182
(Body Diode) showing the
G A
Pulsed Source Current integral reverse
ISM - - 728
(Body Diode) p-n junction diode.
S
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
4.5V 4.5V
BOTTOM 4.0V BOTTOM 4.0V
4.0V
10 10
4.0V
1000 3.0
ID = 82A
RDS(on) , Drain-to-Source On Resistance
100 2.0
(Normalized)
TJ = 175°C 1.5
TJ = 25°C
10 1.0
1E+006 14
VGS = 0V, f = 1 MHZ
ID = 82A
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd 12
100000 VDS = 160V
10000
Coss 8
1000
6
100
4
Crss
10 2
1 0
1 10 100 1000 0 20 40 60 80 100 120 140 160 180
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)
Figure 7 Typical Capacitance vs. Drain-to-Source Figure 8 Typical Gate Charge vs. Gate-to-Source
Voltage Voltage
1000
ISD , Reverse Drain Current (A)
100
T J = 175°C TJ = 25°C
10
VGS = 0V
0.1
0.0 0.4 0.8 1.2 1.6 2.0
VSD , Source-to-Drain Voltage (V)
1000
100µsec
100
ID , Drain-to-Source Current (A)
1msec
10
OPERATION IN THIS AREA
LIMITED BY R DS (on) 10msec
1
DC
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
235 20
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 2.0mA 18
16
225
14
12
Energy (µJ)
215 10
6
205
4
195 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 200 220
7.0 4.5
RDS (on), Drain-to -Source On Resistance (m)
VGS = 6.0V
VGS = 7.0V 4.0
3.0
6.0
2.5
2.0 ID = 270µA
5.5
ID = 1.0mA
1.5 ID = 1.0A
5.0 1.0
0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175
ID , Drain Current (A) TJ , Temperature ( °C )
Figure 13 Typical On-Resistance vs. Drain Figure 14 Threshold Voltage vs. Temperature
Current
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t 1 , Rectangular Pulse Duration (sec)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
Avalanche Current (A)
10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav, assuming
Tj = 25°C and Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
exceeded.
600 3. Equation below based on circuit and waveforms shown in
Figures 23a, 23b.
500 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
400
6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax
300 (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
200 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
100 PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
0 EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
Final Datasheet 10
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams
60 60
IF = 55A IF = 82A
50 VR = 170V VR = 170V
50
TJ = 25°C TJ = 25°C
TJ = 125°C TJ = 125°C
40 40
IRRM (A)
IRRM (A)
30 30
20 20
10 10
0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
di F /dt (A/µs) di F /dt (A/µs)
Figure 18 Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt
3500 4000
IF = 55A IF = 82A
3000 3500
VR = 170V VR = 170V
TJ = 25°C 3000 TJ = 25°C
2500 TJ = 125°C TJ = 125°C
2500
2000
QRR (nC)
QRR (nC)
2000
1500
1500
1000
1000
500 500
0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
di F /dt (A/µs) di F /dt (A/µs)
Figure 20 Typical Stored Charge vs. dif/dt Figure 21 Typical Stored Charge vs. dif/dt
Final Datasheet 11
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams
Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs
Figure 23a Unclamped Inductive Test Circuit Figure 23b Unclamped Inductive Waveforms
Final Datasheet 12
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams
Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms
Figure 25a Gate Charge Test Circuit Figure 25b Gate Charge Waveform
Final Datasheet 13
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Package Information
5 Package Information
Final Datasheet 14
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Qualification Information
6 Qualification Information
Qualification Information
Industrial
Qualification Level (per JEDEC JESD47F) †
Final Datasheet 15
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Revision History
Revision History
Major changes since the last revision
Revision
Page or Reference Date Description of changes
Final Datasheet 16
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
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Edition 2015-05-06 The information given in this document shall in no delivery terms and conditions and prices please
Published by event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office
Infineon Technologies AG characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com).
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With respect to any examples, hints or any typical
values stated herein and/or any information WARNINGS
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IRF200P222