IKP10N60T

TrenchStop® Series p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs G
E
• Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
®
• TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
PG-TO-220-3-1
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package

IKP10N60T 600V 10A 1.5V 175°C K10T60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
TC = 25°C 20
TC = 100°C 10
Pulsed collector current, tp limited by Tjmax ICpul s 30
Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C - 30
Diode forward current, limited by Tjmax IF
TC = 25°C 20
TC = 100°C 10
Diode pulsed current, tp limited by Tjmax IFpul s 30
Gate-emitter voltage VGE ±20 V
2)
Short circuit withstand time tSC 5 µs
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C Ptot 110 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 260
wavesoldering, 1.6 mm (0.063 in.) from case for 10s

1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

www.DataSheet4U.net
Power Semiconductors 1 Rev. 2.2 May 06
 IKP10N60T
TrenchStop® Series p
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 1.35 K/W
junction – case
Diode thermal resistance, RthJCD 1.9
junction – case
Thermal resistance, RthJA 62
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 10 A
T j =2 5 °C - 1.5 2.05
T j =1 7 5° C - 1.8 -
Diode forward voltage VF V G E = 0V , I F = 1 0 A
T j =2 5 °C - 1.6 2.0
T j =1 7 5° C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 0. 3m A, V C E = V G E 4.1 4.6 5.7
Zero gate voltage collector current ICES V C E = 60 0 V , µA
V G E = 0V
T j =2 5 °C - - 40
T j =1 7 5° C - - 1000
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 10 A - 6 - S
Integrated gate resistor RGint none Ω

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 551 - pF
Output capacitance Coss V G E = 0V , - 40 -
Reverse transfer capacitance Crss f= 1 MH z - 17 -
Gate charge QGate V C C = 48 0 V, - 62 - nC
I C =F eh le r !
V erw e is q u el le
ko n n t e n i ch t
g ef u n d e n
w erd en. A
V G E = 15 V

Power Semiconductors 2 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p
Internal emitter inductance LE - 7 - nH
measured 5mm (0.197 in.) from case
1)
Short circuit collector current IC(SC) V G E = 15 V ,t S C ≤ 5 µs - 100 - A
V C C = 4 0 0 V,
T j = 25 ° C

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 °C , - 12 - ns
Rise time tr V C C = 40 0 V, I C = 1 0 A, - 8 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 23 Ω, - 215 -
2)
Fall time tf L σ =6 0 nH , - 38 -
2)
Turn-on energy Eon C σ = 4 0p F - 0.16 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.27 -
Total switching energy Ets reverse recovery. - 0.43 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 °C , - 115 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 0 A, - 0.38 - µC
Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ µs - 10 - A
Diode peak rate of fall of reverse d i r r /d t - 680 - A/µs
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 7 5° C, - 10 - ns
Rise time tr V C C = 40 0 V, I C = 1 0 A, - 11 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 2 3Ω - 233 -
1)
Fall time tf L σ =6 0 nH , - 63 -
1)
Turn-on energy Eon C σ = 4 0p F - 0.26 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.35 -
Total switching energy Ets reverse recovery. - 0.61 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 7 5° C - 200 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 0 A, - 0.92 - µC
Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ µs - 13 - A
Diode peak rate of fall of reverse d i r r /d t - 390 - A/µs
recovery current during t b

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p

t p=1µs

30A

5µs
25A 10A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

T C =80°C 20µs
20A

15A T C =110°C 100µs

1A
10A Ic 500µs

5A 10ms
Ic
DC
0A
0,1A
10H z 100H z 1kHz 10kHz 100kHz
1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 23Ω)

120W 30A

100W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION

80W 20A

60W

40W 10A

20W

0W
0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 4 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p
30A 30A

25A V GE =20V 25A V GE =20V

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
20A 20A
12V 12V
10V 10V
15A 15A
8V 8V
6V 6V
10A 10A

5A 5A

0A 0A
0V 1V 2V 3V 4V 0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

3,0V
25A IC =20A

2,5V
IC, COLLECTOR CURRENT

20A

2,0V IC =10A
15A
1,5V

10A I C =5A
1,0V
T J = 17 5 °C
5A 0,5V
2 5°C

0A 0,0V
0V 2V 4V 6V 8V 10 V -50°C 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p

t d(off) t d(off)

100ns 100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf tf

t d(on)
t d(on)
10ns 10ns

tr

tr

1ns 1ns

0A 5A 1 0A 15A 20A 10Ω 20Ω 30Ω 40Ω 50Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω, VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

t d(off)
6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

m ax.
5V typ.
100ns
t, SWITCHING TIMES

tf 4V
m in.
t d(on)
3V
10ns

tr 2V

1V

1ns
0V
25°C 50°C 75°C 100°C 125°C 15 0°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 0.3mA)
VGE = 0/15V, IC = 10A, RG=23Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p
*) E on and E ts include losses
*) E on an d E ts in c lu d e lo s s es
due to diode recovery E ts *
d u e to d io de re c ov e ry E ts *
1 ,0m J 0,8 mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

0 ,8m J
E off 0,6 mJ E off

0 ,6m J
0,4 mJ E on*
0 ,4m J
E on *
0,2 mJ
0 ,2m J

0 ,0m J 0,0 mJ
0A 5A 1 0A 15A 10Ω 20Ω 30Ω 40Ω 50Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω, VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) E on and E ts include losses

*) E on and E ts include losses
0,6mJ due to diode recovery
due to diode recovery
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

0,8m J
0,5mJ
E ts*

0,4mJ 0,6m J
E ts *
0,3mJ E off
0,4m J

0,2mJ E off

E on * 0,2m J
0,1mJ
E on *

0,0mJ 0,0m J
50°C 100°C 150°C 300V 350V 400V 450V 500V 550V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, RG = 23Ω, VGE = 0/15V, IC = 10A, RG = 23Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p

1nF
C iss
VGE, GATE-EMITTER VOLTAGE

15V

c, CAPACITANCE
120V
480V
10V
100pF

C oss
5V

C rss

0V 10pF
0nC 20nC 40nC 60nC 0V 10V 20V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=10 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

150A
tSC, SHORT CIRCUIT WITHSTAND TIME

10µs
125A
8µs
100A
6µs
75A
4µs
50A

2µs
25A

0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=600V, start at TJ=25°C,
(VCE ≤ 400V, Tj ≤ 150°C) TJmax<150°C)

Power Semiconductors 8 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p

0
10 K/W
D =0.5 D =0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

0
10 K/W

R,(K/W) τ, (s)
0.2 0.2 R,(K/W) τ, (s)
0.2911 6.53*10-2
0.4092 8.33*10-3 0.3169 4.629*10-2 6
0.1 0.5008 7.37*10-4 0.4734 7.07*10-3
0.1
0.1529 7.63*10-5 0.6662 1.068*10-3
R1 R2 0.4398 1.253*10-4
0.05
-1
10 K/W -1
0.05 R1 R2
0.02 10 K/W
0.01 0.02
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
single pulse 0.01
single pulse

-2 -2
10 K/W 10 K/W
10µs 100µs 1ms 10ms 100ms 1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance Figure 22. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

0,8µC T J =175°C
300ns
0,7µC
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME

250ns
0,6µC

200ns
TJ=175°C
0,5µC

0,4µC
150ns
T J=25°C
0,3µC
100ns
TJ=25°C 0,2µC

50ns 0,1µC

0,0µC
0ns 200A/µs 400A/µs 600A/µs 800A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=10A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)

Power Semiconductors 9 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p

14A T J =175°C
-700A/µs T J=25°C
12A

OF REVERSE RECOVERY CURRENT

Irr, REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

-600A/µs

10A
-500A/µs

8A
T J =25°C
-400A/µs
T J=175°C
6A -300A/µs

4A -200A/µs

2A -100A/µs

0A/µs
0A 400A/µs 600A/µs 800A/µs
200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 10A, (VR=400V, IF=10A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

30A

T J =25°C 2,0V
I F =20A
175°C
VF, FORWARD VOLTAGE

10A
IF, FORWARD CURRENT

20A 1,5V

5A
1,0V

10A

0,5V

0A 0,0V
0V 1V 2V -50°C 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

Power Semiconductors 10 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p
TO-220AB
PG-TO220-3-1 Dimensions
symbol [mm] [inch]
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M 2.54 typ. 0.1 typ.
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

Power Semiconductors 11 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH
an d Stray capacity C σ =40pF.

Power Semiconductors 12 Rev. 2.2 May 06

 IKP10N60T
TrenchStop® Series p

Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/20/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Power Semiconductors 13 Rev. 2.2 May 06