G-TYPE PANELS

Photovoltaic System

Kaneka Silicon PV
Gift from the sun

New generation technology for superior performance in Australian conditions

Greater generated watt-power compared
to crystalline silicon PV modules
Kaneka thin film silicon
Kaneka’s amorphous siliconPV module (a-Si) has PV modules powered by
superior light absorption. Compared to mono-
crystalline siliconPV module (c-Si) or poly-crystalline unlimited solar energy
siliconPV module (poly-Si), it generates considerably
more power.
Comparison of total generated watt-power per year
among various materials

The total solar radiation per year is 1,323kWh/m2.

Source: “NEDO/Ritsumeikan University Module Field Test and
Operational Analysis” presented at the International PV SEC-11,
Sapporo, Hokkaido, Japan, 1999. Installation location: Kusatsu,
Shiga Prefecture, Japan Slope angle: 15.3 degree.
NEDO: New Energy and Industrial Technology Organization

Superior performance under high

temperatures during summer makes a real
difference in actual generated watt-power
The c-Si PV modules lose some power-generating
capability by rises in temperature. But a-Si PV
modules generate higher power during summer. The
a-Si PV modules can deliver maximum performance
during summer when the electricity is needed most
for air-conditioners in houses and offices.
Comparison of total generated watt-power per
month among various materials

G-TYPE

*Kaneka Silicon PV’s generated watt-power is approximately the

same as that of other crystalline silicon PVs during the winter
months, but in summer the Kaneka Silicon PV generates
significantly more power compared to other crystalline silicon PVs.
Source: “NEDO/Ritsumeikan University Module Field Test and
Operational Analysis” presented at the international PV SEC-11,
Sapporo, Hokkaido, Japan, 1999. Installation location: Kusatsu,
Shiga Prefecture Japan Slope angle: 15.3 degree
NEDO: New Energy and Industrial Technology Organization
 Stable power output over long period
Consumer for outstanding reliability
The a-Si PV module maintains initial energy
conversion efficiency (after full stabilization) over
long period, attesting to its outstanding reliability.
Long-term reliability data for module efficiency after
stabilization (JQA acceleration test)

Business
Long-term reliability data for module efficiency after stabilisation
Note 1: Data measured by JQA (Japan Quality Assurance
Organization) using Kaneka’s a-Si PV module as a part of research
project subcontracted by NEDO.
Note 2: The acceleration test was performed to evaluate reliability
almost over a 30-year period by considering seasonal variations
of solar radiation and temperatures.
NEDO: New Energy and Industrial Technology Organization

Environmentally friendly
Another advantage is that the single junction a-Si
layer can be made extremely thin. The thickness of
a-Si cell is 0.3μm, which is 1/600 of that of crystalline
silicon cell (approx. 200μm). This means that a-Si cell
uses less material and energy thereby enabling high
productivity for mass production .

Sun Farms

Shorter energy pay-back time (EPT)

EPT is the time a PV module takes to “pay back” the
energy used in its manufacture by its own power
generation. The EPT of amorphous-Si PV is 1.6
Commercial years, which is approximately 6 months shorter than
that of crystalline silicon PV (2.2 years). EPT is one
of the most important aspects when evaluating the
ecological benefit of PV systems.
 Model G-EB060
Model Power (W)
Nominal G-EB060
60.0
Nominal Power (W)
Open Circuit Voltage (V) 60.0
91.8
Open Circuit Voltage
Short Circuit Current (A) (V) 91.8
1.19

 IEC Grade ( IEC 61646, Safty ClassⅡ

Short Circuit Current (A) 1.19
1 Maximum Power Voltage (V)
Maximum Power Voltage
Maximum Power Current (A) (V)
67.0
67.0
0.90 )
Maximum Power Current
Maximum System Voltage (V) (A) 0.90

Kaneka Silicon PV
G-TYPE 530
Maximum System
Dimensions (mm) Voltage (V) 530
L960 W990 D40
Model Dimensions (mm) G-EB060
L960 W990
Weight (kg) 13.7 D40
Nominal Weight
Power (W)(kg) 60.0 13.7
Connector MC
Open Circuit Voltage (V)
Connector 91.8 MC
Short Circuit Current (A) 1.19

 UL
2
 UL Grade
Grade ((
Maximum Power Voltage (V)
2 CEC
CEC Registered
Registered ))
67.0

 IEC
Maximum Power Current (A) 0.90

Dimensions IEC
1 1 Grade ( IEC 61646, Safty ClassⅡ
(mm)
Model
Grade
Maximum System Voltage (V)
( IEC 61646, Safty Class 530 GEB-TYPE
L960 W990 GEB-TYPE
D40
G-SA060
) )
Model
Weight (kg) 13.7 G-SA060
Nominal Power (W) G-TYPE60.0
ConnectorNominal Power (W) MC 60.0
ModelOpen Circuit Voltage (V) G-EB060 91.8
Open
Short Circuit
Circuit Voltage (V) 91.8
Nominal Power (W)Current (A) 60.0 1.19

 UL Grade (
Short Circuit Current (A) 1.19
2 Open Maximum
Short Maximum
Power(V)
Circuit Voltage
Maximum Power
Power(A)
Circuit Current
Voltage (V)
Voltage
Current (A)(V) CEC Registered ) 91.8
1.19
67.0
67.0
0.90
Maximum System
Maximum Power Current
Voltage (A)
(V)
0.90
530
Maximum Power Voltage (V) 67.0
GEB-TYPE
Maximum
UL Fire System Voltage (V)
Rating
530 C
Maximum
Model UL
Power
Fire
Current (A)
Rating 0.90 Class
G-SA060 Class
Fuse
Maximum Rating
System (A)
Voltage (V) 7.0 C
Nominal Power
Fuse (W) (A)
Rating 60.0530 7.0
Dimensions
Dimensions (mm) (mm) L960 L960
W990 W990
D40 D40
Open Circuit Voltage (mm)
Dimensions (V) 91.8
L960 13.7
W990 D40
WeightWeight
(kg) (kg)
Short Circuit
WeightCurrent
(kg) (A) 1.1913.7 13.7
Connector
Connector MC MC
MaximumConnector
Power Voltage (V) 67.0 MC
Maximum Power Current (A) 0.90
Maximum
 UL
2 Grade (
G-EA060/G-SA060
System Voltage
G-EA060/G-SA060
G-EB060
UL Fire Rating
(V) 530
CEC Registered )
Class C
Warranty
Fuse Rating (A) 7.0
GEB-TYPE Warranty
40401 1

Dimensions (mm) Drain Holes Mounting Holes

L960 W990 D40
Model 4­φ6
Drain Holes Mounting G-SA060 ●GEB-TYPE,
990 2.5 4­φ8 Holes ●GEB-TYPE,
Weight (kg) 4­φ6 13.7
Nominal Power (W)990 2.5 4­φ8 60.0 25-year power output warranty
Connector
Open Circuit Voltage (V)
MC
91.8 25-yearT-TYPE
GEB-TYPE, power output
PV modules warranty
wll maintain more than 80% of minimum
GEB-TYPE,
rated T-TYPE
power for PV modules
25 years (based onwlldata
maintain more than
from silicon 80% of minimum
PV modules installed
Short Circuit Current (A) 1.19 ratedapower
over monthfor 25 years
under (basedofon
conditions dataA.M.
25℃, from1.5
silicon
and PV modules
100m W/cm2installed
)
G-EA060/G-SA060
Maximum Power Voltage (V) Grounding
Grounding
Holes
2­φ2Holes
67.0 over a month under conditions of 25℃, A.M. 1.5 and 100m W/cm2)
Maximum Power Current (A) 0.90
Warranty
2.5

2­φ2
660
9602.5

5 03030

Maximum System Voltage (V) 530

660
40 1

UL Fire Rating Drain Holes Mounting Holes Class C

960

4­φ6 ●GEB-TYPE,
990 2.5 4­φ8
70
480

Fuse Rating (A) 7.0

25-year power output warranty
75
480

Dimensions (mm) L960 W990 D40 GEB-TYPE, T-TYPE PV modules wll maintain more than 80% of minimum
150

Weight (kg) 13.7 rated power for 25 years (based on data from silicon PV modules installed
150

24 942
Connector 24
Grounding Holes 942 MC over a month under conditions of 25℃, A.M. 1.5 and 100m W/cm2)
2­φ2
960 2.5

Front View Back View

660

G-EA060/G-SA060
7 5 0 30

Front View Back View

* Data
Warranty
480

listed herewith are standard values measured using the JIS testing method but are not guranteed values.
** Power
Data listed herewith are standard
Drain Holesvalues measured using theby
JISthe
testing method but are
PV not guranteed values.
40 1

The PV systems's power-generating capacity is represented

Mounting Holes total of individual module power outputs calculated based on the JIS.
●GEB-TYPE,
The PV990 systems's 4­φ6conditions
2.5underpower-generating
output actual usage capacity
4­φ8 can is represented by the
vary depending on total of individual
the level PV moduleinstallation
of solar radiation, power outputs calculated
conditions based angles
(directions, on the JIS.
and ambient conditions),
150

Power output under actual usage

regional climates and temperature.
24
conditions
942
can vary depending on the level of solar radiation, 25-year
installation power
conditions outputangles
(directions, warrantyand ambient conditions),
* Specifications
regional climates
Specifications areand temperature.
subject to change without notice. GEB-TYPE, T-TYPE PV modules wll maintain more than 80% of minimum
** JIS：Japanese
Front View
are subject to change
Industrial Standards
JIS：Japanese Industrial Standards
without
BackHoles
View
notice. rated power for 25 years (based on data from silicon PV modules installed
over a month under conditions of 25℃, A.M. 1.5 and 100m W/cm ) 2
Grounding
2­φ2
960 2.5

660

* Data
7 5 0 30

listed herewith are standard values measured using the JIS testing method but are not guranteed values.
* Power
The PV systems's power-generating capacity is represented by the total of individual PV module power outputs calculated based on the JIS.
output under actual usage conditions can vary depending on the level of solar radiation, installation conditions (directions, angles and ambient conditions),
480

regional climates and temperature.

* Specifications are subject to change without notice.
* JIS：Japanese Industrial Standards 24
150

942

Front View Back View

* Data A DE
listed herewith are standard L A IDE
values - Busing
measured R IS B A NE
the - Canberra
JIS testing method but are-notMguranteed
E LB O UR N E - P E RT H - SY D N E Y
values.
* Power
The PV systems's power-generating capacity is represented by the total of individual PV module power outputs calculated based on the JIS.
output under actual usage conditions can vary depending on the level of solar radiation, installation conditions (directions, angles and ambient conditions),
regional climates and temperature. R e g ional A N D Rural N etwork
* Specifications are subject to change without notice.
* JIS：Japanese Industrial Standards Our regional advisors live locally, Australia wide

For more information

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