SHINDENGEN

Super Fast Recovery Rectifiers Dual

OUTLINE DIMENSIONS
SF20LC30 Case : FTO-220
Unit : mm

300V 20A

RATINGS
œAbsolute Maximum Ratings (If not specified Tc=25Ž)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`150 Ž
Operating Junction Temperature Tj 150 Ž
Maximum Reverse Voltage VRM 300 V
Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=112Ž 20 A
Peak Surge Forward Current I FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž 180 A
Dielectric Strength Vdis Terminals to case, AC 1 minute 2k V
Mounting Torque TOR (Recommended torqueF0.3N¥m) 0.5 N¥m

œElectrical Characteristics (If not specified Tc=25Ž)

Item Symbol Conditions Ratings Unit
Forward Voltage VF I F=10A, Pulse measurement, Rating of per diode Max.1.3 V
Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.25 ÊA
Reverse Recovery Time trr I F=0.5A,@ I R=1A,@ Rating of per diode Max.30 ns
Total Gate Charge CJ f=1MHz, VR=10V,@ Rating of per diode Typ.90 pF
Thermal Resistance Æjc junction to case Max.1.5 Ž/W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

http://www.Datasheet4U.com
 SF20LC30 Forward Voltage

10
Forward Current IF [A]

Tc=150°C [MAX]
Tc=150°C [TYP]

Tc=25°C [MAX]
Tc=25°C [TYP]

Pulse measurement per diode

0.1
0 0.4 0.8 1.2 1.6 2 2.4

Forward Voltage V F [V]

 SF20LC30 Forward Power Dissipation
40

DC
35
D=0.8
Forward Power Dissipation PF [W]

30
0.5
SIN
25 0.3

0.2
20
0.1
0.05
15

10

0
0 5 10 15 20 25 30 35

Average Rectified Forward Current I O [A]

Tj = 150°C
IO
0
tp
D=tp /T
T
 SF20LC30 Derating Curve
40
Average Rectified Forward Current IO [A]

35
DC
30
D=0.8

25
0.5
SIN
20
0.3

15 0.2

0.1
10
0.05

0
0 20 40 60 80 100 120 140 160

Case Temperature Tc [ °C]

VR = VRM
IO
0
0
VR

tp
D=tp /T
T
 SF20LC30 Peak Surge Forward Capability
200

IFSM
10ms 10ms
1 cycle
non-repetitive,
sine wave,
150 Tj=25°C before
surge current is applied
Peak Surge Forward Current IFSM [A]

100

50

0
1 2 5 10 20 50 100

Number of Cycles [cycles]

 SF20LC30 Junction Capacitance

f=1MHz
Tc=25°C
TYP
per diode

100

10

Junction Capacitance Cj [pF]

1
1 10 100

Reverse Voltage VR [V]