1. Why we use SiC over Si ?

Si power devices blocking voltage is typically

less than 6.5 kV. The ten times
higher electric field strength in the SiC allows devices be
designed for much higher blocking voltages.

2. Why we use p-GTOs instead of n-GTOs? can we use n-GTO?

SiC GTOs are all p-GTOs instead of n-GTOs because

the available 4H-SiC wafers have a N+ substrate hence
it is easier to develop p-GTO first.

Antenna notes :

https://www.tutorialspoint.com/antenna_theory/antenna_theory_half_wave_folded_dipol
e.htm

Post By: Muhammad Usman

Password: usmanworldfree.com