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OF TECHNOLOGY
NAGPUR
ECE BTECH 15-19
DEVICE MODELLING
LAB
ASSIGNMENT 4
Submitted By:
AMISHA TURKEL
BT15ECE004
*charecteristics*
r1 1 2 1meg
r2 4 3 1k
q1 3 2 0 bjt
vcc 5 0 dc 5
Vdum 5 4 dc 0
vbb 1 0 dc 0
.control
dc vbb 0 5 0.05
run
plot i(Vdum)
.endc
.end
*charecteristics*
r1 1 2 1meg
r2 4 3 1k
q1 3 2 0 bjt
vcc 5 0 dc 5
Vdum 5 4 dc 0
vbb 1 0 dc 0
.control
set xbrushwidth=3
run
plot i(Vdum)
.endc
.end
B)PNP:
*charecteristics*
r1 2 1 1meg
r2 4 3 1k
q1 3 2 0 bjt
vcc 0 5 dc 12
Vdum 4 5 dc 0
vbb 0 1 dc 0
.control
dc vbb 0 10 0.05
run
plot i(Vdum)
.endc
.end
*charecteristics*
r1 2 1 1meg
r2 4 3 1k
q1 3 2 0 bjt
vcc 0 5 dc 12
Vdum 4 5 dc 0
vbb 0 1 dc 0
.control
run
plot i(Vdum)
.endc
.end
Q2. Plot transfer and the output IV characteristics of n-channel and p-channel
MOSFET. Use multiple DC sweep analysis for plotting in Ngspice.
*nmos*
m1 2 1 0 0 MOSN
vg 1 0 dc 5
vd 3 0 dc 5
vdum 3 2 dc 0
.control
dc vg 0 5 0.01
run
plot i(vdum)
.endc
.end
*nmos*
m1 2 1 0 0 MOSN
vg 1 0 dc 5
vd 3 0 dc 5
vdum 3 2 dc 0
.control
dc vd 5 0 0.05 vg 5 0 1
run
plot i(vdum)
.endc
.end
B)PMOS:
*pmos*
.model MOSN
pmos
m1 2 1 0 3 MOSN
vg 1 0 dc 5v
vd 3 0 dc 5v
vdum 3 2 dc 0
.control
dc vg -5 5 0.01
run
plot i(vdum)
.endc
.end
*Pmos*
m1 2 1 0 3 MOSN
vg 1 0 dc 5v
vd 3 0 dc 5v
vdum 3 2 dc 0
.control
dc vd -5 0 0.05 vg -5 0 1
run
plot i(vdum)
.endc
.end
Q4. Q4)Design a 3 input NAND and NOR Gate using CMOS technology.
A)NAND:
vdd 4 0 dc 5v
m1 4 1 5 4 mosp
m2 4 2 5 4 mosp
m3 4 3 5 4 mosp
m4 5 1 6 0 mosn
m5 6 2 7 0 mosn
m6 7 3 0 0 mosn
.control
set xbrushwidth=3
run
plot v(1)
plot v(2)
plot v(3)
plot v(5)
.endc
.end
INPUT A
INP
UT B
INPUT C
TIME(ms) A B C Y
0-12.5 1 1 1 0
12.5-25 1 1 0 1
25-37.5 1 0 1 1
37.5-50 1 0 0 1
50-62.5 0 1 1 1
62.5-75 0 1 0 1
75-87.5 0 0 1 1
87.5-100 0 0 0 1
B)NOR
vdd 4 0 dc 5v
m1 4 1 5 4 mosp
m2 5 2 6 4 mosp
m3 6 3 7 4 mosp
m4 7 1 0 0 mosn
m5 7 2 0 0 mosn
m6 7 3 0 0 mosn
.control
set xbrushwidth=3
run
plot v(1)
plot v(2)
plot v(3)
plot v(7)
.endc
.end
INPUT A
INPUT B
INPUT C
TIME(ms) A B C Y
0-12.5 1 1 1 0
12.5-25 1 1 0 0
25-37.5 1 0 1 0
37.5-50 1 0 0 0
50-62.5 0 1 1 0
62.5-75 0 1 0 0
75-87.5 0 0 1 0
87.5-100 0 0 0 1
Q3.a) Design an Inverter/NOT gate using CMOS technology and plot its voltage
transfer Curve (VTC) and Define and measure the VOH, VIH, VOL, VIL from VTC.
vin 1 0 dc 5v
m1 4 1 2 2 mosp
m2 4 1 0 0 mosn
vdd 2 0 dc 5v
.control
dc vin 0 10 0.005
run
plot v(4)
.endc
.end
b) Perform Q3a) for Kr = 0.5, 1, 5 where kr = Kn/Kp of MOSFET. Justify the answer?
kr=0.5
Kr=1
kr=5
VOL: Nominal voltage corresponding to a low logic state at the output of a logic gate for vI = VOH. Generally V- ≤
VOL.
VOH: Nominal voltage corresponding to a high logic state at the output of a logic gate for vI = VOL. Generally VOH ≤
V+.
VIL: Maximum input voltage that will be recognised as a low input logic level.
VIH: Minimum input voltage that will be recognised as a high input logic level