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VS-100MT060WDF

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Vishay Semiconductors
Primary MTP IGBT Power Module
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
MTP please see www.vishay.com/doc?99912

BENEFITS
PRIMARY CHARACTERISTICS
• Lower conduction losses and switching losses
FRED Pt® AP DIODE, TJ = 150 °C
VRRM 600 V • Higher switching frequency up to 150 kHz
IF(DC) at 80 °C 11 A • Optimized for welding, UPS, and SMPS applications
VF at 25 °C at 60 A 2.08 V • PCB solderable terminals
IGBT, TJ = 150 °C • Direct mounting to heatsink
VCES 600 V 
VCE(on) at 25 °C at 60 A 1.98 V 
IC at 80°C 83 A 
FRED Pt® CHOPPER DIODE, TJ = 150 °C 
VR 600 V 

IF(DC) at 80 °C 17 A

VF at 25 °C at 60 A 2.06 V

Speed 30 kHz to 150 kHz 
Package MTP 
Circuit configuration Dual forward

ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage VRRM 600 V
FRED Pt TC = 25 °C 17
Maximum continuous forward current
antiparallel IF(DC) A
diode TJ = 150 °C maximum TC = 80 °C 11
Maximum power dissipation PD TC = 25 °C 25 W
Collector to emitter voltage VCES TJ = 25 °C 600 V
Gate to emitter voltage VGE IGES max. ± 250 ns ± 20 V
Maximum continuous collector current TC = 25 °C 121
IGBT IC
at VGE = 15 V, TJ = 150 °C maximum TC = 80 °C 83 A
Clamped inductive load current ILM 300
Maximum power dissipation PD TC = 25 °C 462 W
Repetitive peak reverse voltage VRRM 600 V
FRED Pt Maximum continuous forward current TC = 25 °C 26
IF A
chopper diode TJ = 150 °C maximum TC = 80 °C 17
Maximum power dissipation PD TC = 25 °C 56 W
Maximum operating junction temperature TJ 150
°C
Storage temperature range TStg -40 to +150
Isolation voltage VISOL VRMS t = 1 s, TJ = 25 °C 3500 V

Revision: 09-Oct-17 1 Document Number: 93412


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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Blocking voltage BVRRM 0.5 mA 600 - - V
AP diode IF = 60 A - 2.08 2.43
Forward voltage drop VFM V
IF = 60 A, TJ = 125 °C - 2.05 2.3
Collector to emitter
BVCES VGE = 0 V, IC = 0.5 mA 600 - - V
breakdown voltage
Temperature coefficient of
VBR(CES)/TJ IC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C
breakdown voltage
VGE 15 V, IC = 60 A - 1.93 2.29
IGBT Collector to emitter voltage VCE(on) V
VGE = 15 V, lC = 60 A, TJ = 125 °C - 2.36 2.80
Gate threshold voltage VGE(th) VCE = VGE, IC = 500 μA 2.9 - 6.0 V
Collector to emitter VGE = 0 V, VCE = 600 V - - 100 μA
ICES
leakage current VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 2.0 mA
Gate to emitter leakage IGES VGE = ± 20 V - - ± 100 nA
IF = 60 A - 2.06 2.53
Forward voltage drop VFM
FRED Pt IF = 60 A, TJ = 125 °C - 1.83 2.26 V
chopper Blocking voltage BVRM 0.5 mA 600 - -
diode VRRM = 600 V - - 75 μA
Reverse leakage current IRM
VRRM = 600 V, TJ = 125 °C - - 0.5 mA
RECOVERY PARAMETER
Peak reverse recovery current Irr IF = 60 A - 67 11 A
AP diode Reverse recovery time trr dI/dt = 200 A/μs - 120 160 ns
Reverse recovery charge Qrr VR = 200 V - 620 850 nC
Peak reverse recovery current Irr IF = 60 A - 4.5 6.0 A
Reverse recovery time trr dI/dt = 200 A/μs - 67 85 ns
FRED Pt Reverse recovery charge Qrr VR = 200 V - 130 250 nC
chopper
diode Peak reverse recovery current Irr IF = 60 A - 9.5 12.0 A
Reverse recovery time trr dI/dt = 200 A/μs - 128 165 ns
Reverse recovery charge Qrr VR = 200 V, TJ = 125 °C - 601 900 nC

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge Qg IC = 60 A - 460 -
Gate to source charge Qgs VCC = 480 V - 160 - nC
Gate to drain (Miller) charge Qgd VGE = 15 V - 70 -
Turn-on switching loss Eon - 0.2 -
Turn-off switching loss Eoff - 0.96 - mJ
Total switching loss Etot - 1.16 -
IC = 100 A, VCC = 360 V, VGE = 15 V
Turn-on delay time td(on) - 240 -
Rg = 5 , L = 500 μH, TJ = 25 °C
Rise time tr - 47 -
ns
Turn-off delay time td(off) - 240 -
Fall time tf - 66 -
PFC IGBT
Turn-on switching loss Eon - 0.33 -
Turn-off switching loss Eoff - 1.45 - mJ
Total switching loss Etot - 1.78 -
IC = 100 A, VCC = 360 V, VGE = 15 V
Turn-on delay time td(on) - 246 -
Rg = 5 , L = 500 μH, TJ = 125 °C
Rise time tr - 50 -
ns
Turn-off delay time td(off) - 246 -
Fall time tf - 71 -
Input capacitance Cies VGE = 0 V - 9500 -
Output capacitance Coes VCC = 30 V - 780 - pF
Reverse transfer capacitance Cres f = 1 MHz - 120 -

Revision: 09-Oct-17 2 Document Number: 93412


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THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R TJ = 25 °C - 30 000 - 
B value B TJ = 25 °C/TJ = 85 °C - 4000 - K

THERMAL AND MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL MIN. TYP. MAX. UNITS
AP FRED Pt diode Junction to case diode thermal resistance - - 4.9
IGBT Junction to case IGBT thermal resistance - - 0.27
RthJC °C/W
FRED Pt
Junction to case diode thermal resistance - - 2.25
chopper diode
Case to sink, flat, greased surface per module RthCS - 0.06 - °C/W
Mounting torque ± 10 % to heatsink (1) - - 4 Nm
Approximate weight - 65 - g
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.

160 250

140 VGE = 18 V
Case Temperature (°C)

200
Maximum Allowable

120 VGE = 15 V
100 VGE = 9 V
150 VGE = 12 V
IC (A)

80

60 100

40
50
20

0 0
0 20 40 60 80 100 120 140 0 1 2 3 4 5
93412_01 IC - Continuous Collector Current (A) 93412_03 VCE (V)

Fig. 1 - Maximum IGBT Continuous Collector Current vs. Fig. 3 - Typical IGBT Output Characteristics, TJ = 25 °C
Case Temperature

1000 250

100 200
VGE = 18 V

10 150 VGE = 15 V
IC (A)

IC (A)

VGE = 9 V

1 100
VGE = 12 V

0.1 50

0.01 0
1 10 100 1000 0 1 2 3 4 5

93412_02 VCE (V) 93412_04 VCE (V)

Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C

Revision: 09-Oct-17 3 Document Number: 93412


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IF - Instantaneous Forward Current (A)


250 100
90

200 80
70
TC = 125 °C
150 60
TC = 25 °C
IC (A)

50
40 TJ = 150 °C
100
30 TJ = 125 °C

50 20
TJ = 25 °C
10

0 0
5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0

93412_05 VGE (V) 93412_08 VF - Anode to Cathode


Forward Voltage Drop (V)
Fig. 5 - Typical IGBT Transfer Characteristics, TJ = 125 °C Fig. 8 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode, tp = 500 μs

10 160

Allowable Case Temperature (°C) 140


1
120
150 °C
100
ICES (mA)

0.1

80
0.01
60
25 °C
40
0.001
20

0.0001 0
100 200 300 400 500 600 0 5 10 15 20

93412_06 VCES (V) 93412_09 IF - Continuous Forward Current (A)

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode

5.0 100
IF - Instantaneous Forward Drop (A)

90
80 TJ = 150 °C
4.5 TJ = 25 °C
70
60
Vgeth (V)

4.0 50 TJ = 125 °C

40
TJ = 25 °C
30
3.5 TJ = 125 °C 20
10
3.0 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.25 0.75 1.25 1.75 2.25 2.75 3.25 3.75

93412_07 IC (mA) 93412_10 VF - Forward Voltage Drop (V)


Fig. 7 - Typical IGBT Gate Thresold Voltage Fig. 10 - Typical PFC Diode Forward Voltage

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160 5
Allowable Case Temperature (°C)

140
4
120

Energy (mJ)
100
3
80 Eoff

60 2
Eon
40
1
20

0 0
0 5 10 15 20 25 30 35 40 0 10 20 30 40 50
93412_11 IF - Continuous Forward Current (A) 93412_14 Rg (Ω)
Fig. 11 - Maximum Continuous Forward Current vs. Fig. 14 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C
Case Temperature PFC Diode IC = 100 A, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

0.1 1000

TJ = 150 °C
td(off)
Switching Time (ns)

0.01

td(on)
IR (mA)

0.001 100 tf

0.0001 tr
TJ = 25 °C

0.00001 10
100 200 300 400 500 600 0 20 40 60 80 100 120

93412_12 VR (V) 93412_15 IC (A)


Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs. Fig. 15 - Typical IGBT Switching Time vs. IC
Reverse Voltage TJ = 125 °C, VDD = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

2.0 1000
td(off)

1.6 td(on)
Switching Time (ns)
Energy (mJ)

1.2
100 tf
0.8 Eoff
tr

0.4 Eon

0 10
0 20 40 60 80 100 120 0 10 20 30 40 50

93412_13 IC (A) 93412_16 Rg (Ω)


Fig. 13 - Typical IGBT Energy Loss vs. IC Fig. 16 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C
TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5  IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH

Revision: 09-Oct-17 5 Document Number: 93412


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250 180

200 130 TJ = 125 °C


trr (ns)

trr (ns)
TJ = 125 °C

150 80
TJ = 25 °C
TJ = 25 °C

100 30
100 200 300 400 500 100 200 300 400 500

93412_17 dIF/dt (A/μs) 93412_20 dIF/dt (A/μs)


Fig. 17 - Typical trr Antiparallel Diode vs. dIF/dt Fig. 20 - Typical trr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A Vrr = 200 V, IF = 60 A

25 20

20
15
TJ = 125 °C
TJ = 125 °C
15
Irr (A)

Irr (A)

10
10 TJ = 25 °C

5 TJ = 25 °C
5

0 0
100 200 300 400 500 100 200 300 400 500

93412_18 dIF/dt (A/μs) 93412_21 dIF/dt (A/μs)


Fig. 18 - Typical Irr Antiparallel Diode vs. dIF/dt Fig. 21 - Typical Irr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A Vrr = 200 V, IF = 60 A

1100
1000
1500
900
TJ = 125 °C
800
1200 TJ = 125 °C
700
Qrr (nC)

Qrr (nC)

600

900 500
TJ = 25 °C 400
300
600
200
TJ = 25 °C
100
300 0
100 200 300 400 500 100 200 300 400 500
93412_19 dIF/dt (A/μs) 93412_22 dIF/dt (A/μs)
Fig. 19 - Typical Qrr Antiparallel Diode vs. dIF/dt Fig. 22 - Typical Qrr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A Vrr = 200 V, IF = 40 A

Revision: 09-Oct-17 6 Document Number: 93412


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ZthJC - Thermal Impedance


Junction to Case (°C/W)

0.1

D = 0.50
D = 0.20
D = 0.10
0.01
D = 0.05
D = 0.02
D = 0.01
DC

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

93412_23 t1 - Rectangular Pulse Duration (s)


Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)

10
ZthJC - Thermal Impedance
Junction to Case (°C/W)

1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
DC

0.01
0.0001 0.001 0.01 0.1 1 10

93412_24 t1 - Rectangular Pulse Duration (s)


Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics (PFC Diode)

L
+ VCC 80 V
+
D.U.T. - D.U.T.
0 -
1000 V
1K Rg

Fig. 25 - Gate Charge Circuit (Turn-Off) Fig. 26 - RBSOA Circuit

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Diode clamp/
D.U.T.
Driver L

+
-
D + -5V +
C - 900 V
D.U.T./ -
VCC
Driver
D.U.T. Rg

Fig. 27 - S.C. SOA Circuit Fig. 28 - Switching Loss Circuit

VCC
R=
ICM

+
D.U.T. -
VCC
Rg

Fig. 29 - Resistive Load Circuit

CIRCUIT CONFIGURATION

E1
F1
Q1
D1 D3
A7
E6
A1 M2
E7
B1 M3
Th
Q4
G6
D2 D4
G7
M7
I1
L1

Revision: 09-Oct-17 8 Document Number: 93412


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ORDERING INFORMATION TABLE

Device code VS- 100 MT 060 W DF

1 2 3 4 5 6

1 - Vishay Semiconductors product


2 - Current rating (100 = 100 A)
3 - Essential part number (MT = MTP package)
4 - Voltage code x 10 = voltage rating (example: 060 = 600 V)
5 - Die IGBT technology (W = warp speed IGBT)
6 - Circuit configuration (DF = dual forward)

LINKS TO RELATED DOCUMENTS


Dimensions www.vishay.com/doc?95383

Revision: 09-Oct-17 9 Document Number: 93412


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Outline Dimensions
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MTP - Full Pin
DIMENSIONS in millimeters

3.0
12 ± 0.3 39.5 ± 0.3 12.1 ± 0.3 2.1

1.5
Ø 1.1 ± 0.025 z detail

6
2.5 ± 0.1

17 ± 0.3
3
Use Self Tapping Screw
or M2.5 x X.
45 ± 0.1
e.g. M2.5 x 6 or M2.5 x 8

63.5 ± 0.15 according to PCB


thickness used
0.8 Ra

1.3 48.7 ± 0.3 7.4 21.1 ± 0.5


4.1

A B C D E F G H I L M
1
2
45°

31.8 ± 0.15
19.8 ± 0.1

33.2 ± 0.3

27.5 ± 0.3
3

Ø 5 (x 4)
15.2

22.8
7.6

4
5
6
5.2

X
7

Ø 2.1 (x 4) 6
R 2.6 (x 2)
12
18
24

30

PINS POSITION
WITH TOLERANCE Ø 0.6

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Revision: 08-Feb-17 1 Document Number: 91000