Electronics Devices - Circuits

1.
At room temperature the current in an intrinsic semiconductor is due to
A. holes
B. electrons
C. ions
D. holes and electrons
Answer & Explanation
Answer: Option D
Explanation:
Intrinsic material has equal number of holes and electrons.
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2. Work function is the maximum energy required by the fastest electron at 0 K to escape from the
metal surface.
A. True B. False
Answer: Option B
Explanation:
Work function is the minimum energy required by the fastest electron at 0 K to escape from the
metal surface.
3. The most commonly used semiconductor material is
A. silicon
B. germanium
C. mixture of silicon and germanium
D. none of the above

Answer: Option A
Explanation:
Germanium is rarely used.
4. In which of these is reverse recovery time nearly zero?
A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode
Answer: Option C
Explanation:
In schottky diode there is no charge storage and hence almost zero reverse recovery time.
5. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A. 100 B. 99
C. 1.01 D. 0.99
Answer: Option A
Explanation:
Current gain = 1 + β = 100.

6. In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-
region to n-region and IE due to injection of electrons from n-region to p-region. Then
A. IEp and IEn are almost equal
B. IEp >> IEn
C. IEn >> IEp
D. either (a) or (c)
Answer: Option B
Explanation:
Emitter is p-type in p-n-p transistor.
Therefore holes are majority carriers.
7. In an n channel JFET, the gate is
A. n type
B. p type
C. either n or p
D. partially n & partially p
Answer: Option B
Explanation:
Since channel is n type gate must be p type.
8. The amount of photoelectric emission current depends on

A. frequency of incident radiation
B. intensity of incident radiation
C. both frequency and intensity of incident radiation
Answer: Option B
Explanation:
Only the intensity of incident radiation governs the amount of photoelectric emission.
9. Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer
increases.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A
Explanation:
The increase in reverse resistance is due to widening of depletion layer.
10. In the circuit of figure the function of resistor R and diode D are
A. to limit the current and to protect LED against over voltage
B. to limit the voltage and to protect LED against over current
C. to limit the current and protect LED against reverse breakdown voltage.
D. none of the above.
Answer: Option C
Explanation:
Resistance limits current and diode is reverse connected and therefore protects LED against
reverse breakdown.
11. At very high temperatures the extrinsic semi conductors become intrinsic because
A. drive in diffusion of dopants and carriers
B. band to band transition dominants over impurity ionization
C. impurity ionization dominants over band to band transition
D. band to band transition is balanced by impurity ionization
Answer: Option B
Explanation:
Covalent bonds are broken.
12. When a voltage is applied to a semiconductor crystal then the free electrons will flow.
A. towards positive terminal
B. towards negative terminal
C. either towards positive terminal or negative terminal
D. towards positive terminal for 1 μs and towards negative terminal for next 1 μs
Answer: Option A
Explanation:
Since electrons are negatively charged they will flow towards positive terminal.
13. Ferrite have
A. low copper loss
B. low eddy current loss
C. low resistivity
D. higher specific gravity compared to iron
Answer: Option C
Explanation:
Ferrite is a low density material of composition with Fe2O3 x O, where x is a bivalent metal, such
as Cobart, Ni, Mn. These magnetic materials having very low loss of current and used in high
frequency circuit.
14. In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor
atoms is increased. The new position of Fermi level is likely to be
A. 0.5 eV above valence band
B. 0.28 eV above valence band

C. 0.1 eV above valence band
D. below the valence band
Answer: Option B
Explanation:
Addition of acceptor atom brings Fermi level closer to valence band.
15. In an n-p-n transistor, the majority carriers in the base are
A. electrons
B. holes
C. both holes and electrons
D. either holes or electrons
Answer: Option A
Explanation:
Emitter is n type and emits electrons which diffuse through the base.
16. An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series
resistance is
A. 0 to 200 Ω
B. 200 - 400 Ω
C. 200 Ω and above
D. 400 Ω and above

Answer: Option D
Explanation:
R= = 400Ω.
R must be at least 400Ω so that current in LED does not exceed 10 mA.
17. The number of doped regions in PIN diode is
A. 1
B. 2
C. 3
D. 1 or 2
Answer: Option B
Explanation:
A PIN diode has p and n doped regions separated by intrinsic layer.
18. A transistor has two p-n junctions. The batteries should be connected such that
A. both junctions are forward biased
B. both junctions are reverse biased
C. one junction is forward biased and the other is reverse biased
Answer: Option C
Explanation:
Emitter-base junction is forward biased and base collector junction is reverse biased.
19. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico
Ampere. The reverse saturation current at 40°C for the same bias is approximately.
A. 30 pA
B. 40 pA
C. 50 pA
D. 60 pA
Answer: Option B
Explanation:
By increasing of temperature by 10°C, Io become double so by increasing temperature 20°C,

Io become 4 time than initial value... and it is 40 PA.
20. In a bipolar transistor the barrier potential
A. 0
B. a total of 0.7 V
C. 0.7 V across each depletion layer
D. 0.35 V
Answer: Option C
Explanation:
Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer.
21. Recombination produces new electron-hole pairs
A. True B. False
Answer: Option B
Explanation:
Due to recombination the number of electron-hole pairs is reduced.
22. An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output
resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the
above amplifier with a feedback factor of 0.2 is
A. 1/11 kΩ
B. 1/5 kΩ
C. 5 kW
D. 11 kW
Answer: Option A
Explanation:
Input Resistance with feedback for current shunt, .
23. As compared to an ordinary semiconductor diode, a Schottky diode
A. has lower cut in voltage
B. has higher cut in voltage
C. lower reverse saturation current
D. both (b) and (c)

Answer: Option A
Explanation:
Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor
diode.
24. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.
Answer: Option A
Explanation:
Avalanche breakdown occurs at high reverse voltage.
25. As compared to an ordinary semiconductor diode, a Schottky diode
A. has higher reverse saturation current
B. has higher reverse saturation current and higher cut in voltage
C. has higher reverse saturation current and lower cut in voltage
D. has lower reverse saturation current and lower cut in voltage
Answer: Option C
Explanation:
This is due to high electron concentration in metals.

26. Crossover distortion behaviour is characteristic of
A. class A O/P stage
B. class B O/P stage
C. class AB output stage
D. common pulse O/P state
Answer: Option B
Explanation:
It is a characteristics of class B output stage as the amplifier is biased in cut-off region.
In class B amplifier, two transistor are operated in such a way that one is amplify the half cycle
and second is amplify -ve half cycle.
27. If ac for transistor is 0.98 then βac is equal to

A. 51 B. 49
C. 47 D. 45
Answer: Option B
Explanation:
28. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic
semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction
band.
Answer: Option B
Explanation:
A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct
but independent.
29. In an n-p-n transistor biased for operation in forward active region
A. emitter is positive with respect to base
B. collector is positive with respect to base
C. base is positive with respect to emitter and collector is positive with respect to base
Answer: Option C
Explanation:
In forward active mode emitter base junction is forward biased and base collector junction is
reverse biased.
30. An increase in temperature increases the width of depletion layer.
A. True B. False
Answer: Option B
Explanation:
With increase in temperature width of depletion layer decreases.

31. A zener diode is used in
A. voltage regulator circuit
B. amplifier circuits
C. both voltage regulator and amplifier circuit
Answer: Option A
Explanation:
Zener diode is used only in voltage regulator circuits.
32. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the
semiconductor material used there is .. h = 6.6 x 10-34 J sec.
A. 2.26 eV
B. 1.98 eV
C. 1.17 eV
D. 0.74 eV
Answer: Option A
Explanation:
From Plank equation joule
to convert it into electron volt it will be divided by 1.6 x 10-19.
33. In a zener diode
A. the forward current is very high
B. sharp breakdown occurs at a certain reverse voltage
C. the ratio v-i can be negative
D. there are two p-n junctions
Answer: Option B
Explanation:
When reverse voltage equals breakdown value it starts conducting and voltage does not increase
further.
34. In a bipolar transistor which current is largest
A. collector current
B. base current
C. emitter current
D. base current or emitter current

Answer: Option C
Explanation:
Emitter current is larger, collector current is slightly less than emitter current and base current is
very small.
35. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small
signal amplification
A. AB B. BC
C. CD D. BD
Answer: Option B
Explanation:
Small signal amplifier operation is in constant current region of characteristics.

36. Secondary emission is always decremental.
A. True B. False
Answer: Option B
Explanation:
Sometimes it can be useful also.
37. In a degenerate n type semiconductor material, the Fermi level,

A. is in valence band
B. is in conduction band
C. is at the centre in between valence and conduction bands
D. is very near valence band
Answer: Option B
Explanation:
This is due to lower doping.
38. The types of carriers in a semiconductor are
A. 1 B. 2
C. 3 D. 4
Answer: Option B
Explanation:
Holes and electrons.
39. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the
diode. The current is
A. 7 mA
B. 6.3 mA
C. 0.7 mA
D. 0

Answer: Option B
Explanation:
40. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32
nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C
rise in temperature.
Answer: Option A
Explanation:
At 20°C, 4 nA, at 30°C, 8 nA, at 40°C, 16 nA, at 50°C, 32 nA.

41. Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/
RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.
A. 42.53, 0.85 μA
B. 40.91, 0.58 μA
C. 40.91, 0.58 μA
D. 41.10, 0.39 μA
Answer: Option A
Explanation:
SICO = (1 + β).
51. = 42.53
ΔIC = (SICO).ΔICO
= 42.53 x 19.9 nA
= 0.85 μA.
42. A periodic voltage has following value for equal time intervals changing suddenly
from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then
rms value of the waveform is
A. 31 V
B. 32 V
C. insufficient data
D. none of these
Answer: Option A
Explanation:
RMS value = 965 = 31.064 Volt.
43. Work function of oxide coated cathode is much lower than that of tungsten cathode.
A. True B. False
Answer: Option A
Explanation:
Therefore emission current from oxide coated cathode is more.
44. The word enhancement mode is associated with
A. tunnel diode
B. MOSFET
C. JFET
D. photo diode
Answer: Option B
Explanation:
MOSFET may be depletion mode or enhancement mode.
45. In which region of a CE bipolar transistor is collector current almost constant?
A. Saturation region
B. Active region
C. Breakdown region
D. Both saturation and active region
Answer: Option B
Explanation:
It is used as amplifier when it operates in this region.

46. A p-n junction diode has
A. low forward and high reverse resistance
B. a non-linear v-i characteristics
C. zero forward current till the forward voltage reaches cut in value
D. all of the above
Answer: Option D
Explanation:
A p-n Junction has all these features.
47. Which of the following is true as regards photo emission?
A. Velocity of emitted electrons is dependent on light intensity
B. Rate of photo emission is inversely proportional to light intensity
C. Maximum velocity of electron increases with decreasing wave length
D. Both holes and electrons are produced
Answer: Option C
Explanation:
As wavelength decreases, frequency increases and maximum velocity of electron

increases.
48. The power dissipation in a transistor is the product of
A. emitter current and emitter to base voltage
B. emitter current and collector to emitter voltage

C. collector current and collector to emitter voltage
Answer: Option C
Explanation:
Maximum power dissipation occurs at collector junction.
49. The normal operation of JFET is
A. constant voltage region
B. constant current region
C. both constant voltage and constant current regions
D. either constant voltage or constant current region
Answer: Option B
Explanation:
In major portion of drain characteristics ID is constant.
50. The minority carrier life time and diffusion constant in a semiconductor material are
respectively 100 microsecond and 100 cm2/sec. The diffusion length is
A. 0.1 cm
B. 0.01 cm
C. 0.0141 cm
D. 1 cm

Answer: Option A
Explanation:
Diffusion length = .
SECTION 2
1. An incremental model of a solid state device is one which represents the
A. ac property of the device at desired operating point
B. dc property of the device at all operating points
C. complete ac and dc behaviour at all operating points
D. ac property of the device at all operating points
Answer: Option A
Explanation:
Incremental model is used for ac response at one operating point.
2. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar
junction transistor?
1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. E pi-layer formation
Select the correct answer using the codes given below:
A. 3, 4, 1, 2
B. 4, 3, 1, 2
C. 3, 4, 2, 1
D. 4, 3, 2, 1
Answer: Option D
Explanation:
It is always non-linear.
3. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than
that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will
A. remain unchanged
B. decrease
C. change Polarity
D. increase
Answer: Option A
Explanation:
VT depends upon MOSFET construction, hence it will Independent from MOSFET parameters.
4. Which of the following is used for generating time varying wave forms?
A. MOSFET
B. PIN diode
C. Tunnel diode
D. UJT
Answer: Option D
Explanation:
Its output is used to trigger SCR.
5. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x
1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm2/
V-sec and mobility of holes = 100 cm2/V-sec.
A. 0.43 Ω-m
B. 0.34 Ω-m
C. 0.42 Ω-m
D. 0.24 Ω-m
Answer: Option B
Explanation:
Resistivity() = .
σ = e(neue + nnun).
6. An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage
and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16,
ε0 = 8.87 x 10-12 F/m) is
A. 0.036 nm
B. 0.6 μm
C. 3 mm
D. 1.5 mm
Answer: Option B
Explanation:
.
7. n-type semiconductors
A. are negatively charged
B. are produced when indium is added as impurity to germanium
C. are produced when phosphorus is added as impurity to silicon
Answer: Option C
Explanation:
n type semiconductor is produced when pentavalent impurity is added.
8. In all metals
A. conductivity decreases with increase in temperature
B. current flow by electrons as well as by holes
C. resistivity decreases with increase in temperature
D. the gap between valence and conduction bands is small
Answer: Option A
Explanation:
In all metals conductivity decreases (and resistance increases) with increase in temperature.
9. The voltage across a zener diode

A. is constant in forward direction
B. is constant in reverse direction
C. is constant in both forward and reverse directions
Answer: Option B
Explanation:
Zener diode is always reverse biased.
10. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects
(doping, construction, shape, size). The n-p-n transistor will have better frequency response.
Reason (R): The electron mobility is higher than hole mobility.
Answer: Option A
Explanation:
Therefore mostly npn transistors are used.
11. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is
biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
A. 1.5 V
B. 2.5 V
C. 3.5 V
D. 4.5 V
Answer: Option B
Explanation:
It is used with reverse bias.
12. Which of these has degenerate p and n materials?
A. Zener diode
B. PIN diode
C. Tunnel diode
D. Photo diode
Answer: Option C
Explanation:
Tunnel diode has heavily doped p and n layers called degenerate p and n materials.
13. A Schottky diode clamp is used along with switching BJT for
A. reducing the power dissipation
B. reducing the switching time
C. increasing the value of β
D. reducing the base current

Answer: Option B
Explanation:
Schottky diode has very low switching time.
14. From the given circuit below, we can conclude that.
A. BJT is pnp
B. BJT is npn
C. transistor is faulty
D. not possible to determined
Answer: Option C
Explanation:
According to figure, both the LED is glowing, which indicate that circuit is complete in both the half
cycle of a.c. signal.
Therefore Emitter and Base junction will act as short circuit in both direction, which indicate
transistor is faulty.
15. In a piezoelectric crystal, applications of a mechanical stress would produce
A. plastic deformation of the crystal

B. magnetic dipoles in the crystal
C. electrical polarization in the crystal
D. shift in the Fermi level
Answer: Option C
Explanation:
In piezoelectric materials mechanical stress produces electric polarization.
16. In which of the following is the width of junction barrier very small?
A. Tunnel diode
B. Photo diode
C. PIN diode
D. Schottky diode
Answer: Option D
Explanation:
Schottky diode has very small depletion layer.
17. If the reverse voltage across a p-n junction is increased three times, the junction capacitance
A. will decrease
B. will increase
C. will decrease by an approximate factor of about 2
D. will increase by an approximate factor of about 2

Answer: Option C
Explanation:
Increase of reverse voltage widens the depletion layer and junction capacitance decreases.
However the decrease in capacitance is not proportional to increase in voltage.
18. Which of these has highly doped p and n region?
A. PIN diode
B. Tunnel diode
C. Schottky diode
D. Photodiode
Answer: Option B
Explanation:
Tunnel diode has heavily doped p and n regions leading to very thin depletion layer.
19. Measurement of Hall coefficient enables the determination of
A. recovery time of stored carrier
B. type of conductivity and concentration of charge carriers
C. temperature coefficient and thermal conductivity
D. Fermi level and forbidden energy gap
Answer: Option B
Explanation:
If a potential difference is developed across a current carrying metal strip when the strip is placed
in transverse magnetic field.
Hall effect is very weak in metals, but it is large semiconductors.
20. The units for transconductance are
A. ohms B. amperes
C. volts D. siemens
Answer: Option D
Explanation:
Its units are the same as the units of conductance.

21. The amount of photoelectric emission current depends on the frequency of incident light.
A. True B. False
Answer: Option B
Explanation:
It depends on intensity of incident light.
22. When a p-n junction is forward biased
A. the width of depletion layer increases
B. the width of depletion layer decreases
C. the majority carriers move away from the junction
D. the current is very small
Answer: Option B
Explanation:
Forward voltage decreases the width of depletion layer leading to low resistance.
23. The carriers of n channel JFET are
A. free electrons and holes
B. holes
C. free electrons or holes
D. free electrons
Answer: Option D
Explanation:
In n type semiconductors carriers are electrons.
24. The depletion layer around p-n junction in JFET consists of
A. hole
B. electron
C. immobile charges
Answer: Option C
Explanation:
Depletion layer always has immobile charges.
25. Junction temperature is always the same as room temperature.
A. True B. False
Answer: Option B
Explanation:
When the device is being used, junction temperature is higher than room temperature.
26. The mean free path of conduction electrons in copper is about 4 x 10-8 m. For a copper block, find
the electric field which can give, on an average, 1 eV energy to a conduction electron
A. 2.62 x 107 V/m
B. 2.64 x 107 V/m
C. 2.5 x 107 V/m
D. 2.58 x 107 V/m
Answer: Option C
Explanation:
Work (Energy) = F x d
1 eV = e.E x d
2.5 x 107 V/m.
27. When a p-n-p transistor is properly biased to operate in active region the holes from emitter.
A. diffuse through base into collector region
B. recombine with electrons in base
C. recombine with electrons in emitter

Answer: Option A
Explanation:
The reason that collector current is nearly equal to emitter current.
28. Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.
Reason (R): Forbidden gap in silicon is more than that in germanium.
Answer: Option A
Explanation:
Wider forbidden gap in silicon makes it less sensitive to temperature than germanium.
29. Assertion (A): A decrease in temperature increases the reverse saturation current in ap-n diode.
Reason (R): When a diode is reverse biased surface leakage current flows.
Answer: Option D
Explanation:
A is wrong because decrease in junction temperature decreases reverse saturation current.
30. At room temperature a semiconductor material is
A. perfect insulator
B. conductor
C. slightly conducting
D. any of the above
Answer: Option C
Explanation:
At 0 K a semiconductor is perfect insulator. At room temperature it is slightly conducting.

31. The static characteristic of an adequately forward biased P-n junction is a
straight line, if the plot is of __________ Vs → versus
A. log I Vs log V
B. log I Vs V
C. I Vs log V
D. I Vs V
Answer: Option B
Explanation:
Diode current equation
I = Is(eV/Vr - 1) = eV/Vr - 1
= = eVs/VR
Vs = VR .
32. In an n channel JFET
ID, IS and IG are considered positive when flowing into the

A.
transistor
ID and IS are considered positive when flowing into transistor

B.
and IG is considered positive when flowing out of it
C. ID, IS, IG are considered positive when flowing out of transistor
IS and IG are considered positive when flowing into transistor

D.
and ID is considered positive when flowing out of it
Answer: Option A
Explanation:
All currents are assumed positive when flowing into JFET.
33. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x

1016/m3. If after doping, the number of majority carriers is 5 x 1020/m3.
The minority carrier density is
A. 4.5 x 1011/m3
B. 3.33 x 104/m3
C. 5 x 1020/m3
D. 3 x 10-5/m3
Answer: Option A
Explanation:
34. A diode is operating in forward region and the forward voltage and current
are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average
power dissipated is
A. 15 mW
B. about 15 mW
C. 1.5 mW
D. about 1.5 mW
Answer: Option B
Explanation:
The contribution of sine terms to power dissipation is zero.
35. Two identical silicon diodes D1 and D2 are connected back to back shown in
figure. The reverse saturation current Is of each diode is 10-8 amps and the
breakdown voltage VBris 50 v. Evaluate the voltages VD1 and VD2 dropped
across the diodes D1 and D2assuming KT/q to be 25 m V.
A. 4.983 V, 0.017 V
B. - 4.98 V, - 0.017 V
C. 0.17 V, 4.983 V
D. - 0.017 V, - 4.98 V
Answer: Option B
Explanation:
According to figure, D2 is forward bias, D1 is reverse biased. Reverse

saturation current I0 = 10-8A. in clockwise direction.
For Diode D2 Is = I0
Here Is = I0
eqv2/kT = 2 or ev2/0.026 = 2
V2 = 0.018 V
Drop across D1 = V1 = 5 - 0.018
4.98 V
By KVL in mesh, VD1 = -4.98 V, VD2 = 0.018 V.
36. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature
is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to
about
A. 100 mW
B. 250 mW
C. 450 mW
D. 600 mW

Answer: Option B
Explanation:
350 - 2.5 (60 - 25) ∼ 250 mW.
37. The concentration of minority carriers in a semiconductor depends mainly on
A. the extent of doping
B. temperature
C. the applied bias
Answer: Option B
Explanation:
Minority carriers are generated due to thermal excitation.
38. Which of the following has highest conductivity?
A. Silver B. Aluminium
C. Tungsten D. Platinum
Answer: Option A
Explanation:
Silver has highest conductivity (and lowest resistivity) in all metals.
39. In a bipolar junction transistor the base region is made very thin so that
A. recombination in base region is minimum
B. electric field gradient in base is high
C. base can be easily fabricated
D. base can be easily biased
Answer: Option A
Explanation:
Since recombination in base region is minimum, I - IE.
40. Compared to bipolar junction transistor, a JFET has
A. lower input impedance
B. high input impedance and high voltage gain
C. higher voltage gain
D. high input impedance and low voltage gain
Answer: Option D
Explanation:
JFET is voltage controlled device. Therefore its input impedance is high. But voltage
gain is lower than in BJT.
41. The drain characteristics of JFET in operating region, are
A. inclined upwards
B. almost flat
C. inclined downwards
D. inclined upwards or downwards

Answer: Option B
Explanation:
The drain current is almost constant. Therefore, characteristics is flat.
42. As temperature increases
A. the forbidden energy gap in silicon and germanium increase
B. the forbidden energy gap in silicon and germanium decrease
the forbidden energy gap in silicon decreases while that in

C.
germanium decreases
the forbidden energy gap in silicon increases while that in

D.
germanium decreases
Answer: Option B
Explanation:
Therefore, conductivity increases.
43. When a reverse bias is applied to a p-n junction, the width of depletion
layer.
A. decreases
B. increases
C. remains the same
D. may increase or decrease
Answer: Option B
Explanation:
Therefore, the resistance is very high.
44. The Hall constant in Si bar is given by 5 x 103 cm3/ coulomb, the hole
concentration in the bar is given by
A. 105/cm3
B. 1.25 x 1015/cm3
C. 1.5 x 1015/cm3
D. 1.6 x 1015/cm3
Answer: Option B
Explanation:
45. Which of the following devices has a silicon dioxide layer?
A. NPN transistor
B. Tunnel diode
C. JFET
D. MOSFET
Answer: Option D
Explanation:
The SiO2 layer provides very high input impedance.

46. Which statement is false as regards holes
A. Holes exist in conductors as well as semiconductors
B. Holes constitute positive charges
C. Holes exist only in semiconductors
D. Holes and electrons recombine
Answer: Option A
Explanation:
Holes do not exist in conductors.
47. Photo electric emission can occur only if
A. wave length of incident radiation is equal to threshold value
B. wave length of incident radiation is less than threshold value
C. frequency of incident radiation is less than threshold frequency
Answer: Option B
Explanation:
The frequency of incident radiation has to be more than threshold value. Wavelength is inversely
proportional to frequency.
Therefore wavelength of incident radiation must be less than threshold value.
48. The reverse saturation current of a diode does not depend on temperature.
A. True B. False

Answer: Option B
Explanation:
It increases with increase of temperature.
49. In a piezoelectric crystal, application of a mechanical stress would produce
A. plastic deformation of the crystal
B. magnetic Dipoles in the crystal
C. electric polarization in the crystal
D. shift in the Fermi level
Answer: Option C
Explanation:
Commonly material used as piezoelectric crystal is Barium Nitrate. Generally ferroelectric crystals
and piezoelectric.
50. The value of  in a transistor

A. is always equal to 1
B. is less than 1 but more than 0.9
C. is about 0.4
D. is about 0.1
Answer: Option B
Explanation:
 is about 0.98.
Section 3
1. Which of these has 3 layers?
A. PIN diode
B. Zener diode
C. Schottky diode
D. Photo diode
Answer: Option A
Explanation:
p layer, i layer and n layer.
2. As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by
the equation
A.
mv2 = hf - Uw
B.
mv2 ≤ hf - Uw
C.
mv2 = hf + Uw
D.
mv2 ≤ hf + Uw
Answer: Option B
Explanation:
Some electrons have less energy than Fermi level E and, therefore, more energy than Uw to
escape.
Therefore, this equation has inequality sign.
3. For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10 -3A/V2,
VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.
A. 10 mA
B. 1.11 mA
C. 0.751 mA
D. 46.98 mA
Answer: Option B
Explanation:
Drain current Id = k (|Vgs| - |VT|)2
= 0.278 x 10-3(4 - 2)2
= 1.11 mA.
4. The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same
temperature and at 2 MHz, the skin depth would be approximately
A. 47 μm
B. 33 μm
C. 92 μm
D. 1.22 μm
Answer: Option A
Explanation:
Skin depth =
5. When p-n junction is reverse biased the holes in p material move towards the junction and
electrons in n material move away from the junction.
A. True B. False
Answer: Option A
Explanation:
Both holes and electrons move away from junction.
6. A semiconductor diode is biased in forward direction and carrying current I. The current due to
holes in p material is
A. I
B. 0
C. less than I
D. 0.5
Answer: Option C
Explanation:
Small current due to minority carriers also. Therefore hole current is less than.
7. Between which regions does BJT act like switch?
A. Cut off and saturation
B. Cut off and forward active
C. Forward active and cut off

D. Saturation and active
Answer: Option A
Explanation:
In cut off mode a BJT is an open switch and in saturation mode it is a closed switch.
8. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive
device.
Answer: Option D
Explanation:
A is wrong because exposure to light decreases bulk resistance.
9. Which of the following elements act as donor impurities?
1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium
Select the answer using the following codes :
A. 1, 2 and 3
B. 1, 2, 4, and 6
C. 3, 4, 5 and 6
D. 2, 4 and 5
Answer: Option D
Explanation:
Only antimony, arsenic and phosphorous are pentavalent.
10. Light dependent resistor is
A. photo resistive device
B. photo voltaic device
C. photo emissive device
Answer: Option A
Explanation:
Resistance of LDR depends on light.
11. The breakdown voltage in a zener diode
A. is almost constant
B. is very small
C. may destroy the diode
D. decreases with increase in current

Answer: Option A
Explanation:
Therefore, it is used in voltage regulator circuits.
12. A varactor diode is used for
A. tuning
B. rectification
C. amplification
D. rectification and amplification
Answer: Option A
Explanation:
Its voltage dependent capacitance is used for tuning.
13. One eV = 1.602 x 10-19 joules.
A. True B. False
Answer: Option A
Explanation:
One electron has a charge 1.602 x 10-19 C, when it falls through 1 V, energy is 1 eV = 1.602 x 10-
19 J.
14. Assertion (A): When VDS is more than rated value the drain current in a JFET is very high.
Reason (R): When VDS is more than rated value, avalanche breakdown occurs.
Answer: Option A
Explanation:
Avalanche breakdown causes high current.
15. If ib is plate current, eb is plate voltage and ec is grid voltage the v-i curve of a vacuum triode is
ib = 0.003 (eb + kec)n. Typical values of k and n are
A. 0.5 and 1
B. - 2 and 1
C. 30 and 1
D. 30 and 1.5
Answer: Option D
Explanation:
k has to be much higher than 1 so that grid is effective in controlling plate current n is not 1
because it is a nonlinear device.
16. In which material do conduction and valence bands overlap
A. insulators
B. conductors
C. both conductor and semiconductor
D. semiconductors
Answer: Option B
Explanation:
This is the reason for high conductivity of conductors.
17. For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the
ends, an increase in illumination results in
A. a change in O.C. voltage
B. a change in S.C. current
C. a decrease in resistance
D. an increase in resistance
Answer: Option C
Explanation:
Increase in illumination reduces resistance of a photoconductor.
18. Discrete transistors T1 and T2 having maximum collector current rating of 0.75 amp are connected
in parallel as shown in the figure, this combination is treated as a single transistor to carry a total
current of 1 ampere, when biased with self bias circuit. When the circuit is switched on, T 1 draws
0.55 amps and T2 draws 0.45 amps. If the supply is kept on continuously, ultimately it is very
likely that
A. Both T1, and T2 get damaged

B. Both T1, and T2 will be safe.
C. T1 Will get damaged and T2 will be safe
D. T2 will get damaged and T1, will be safe.
Answer: Option C
Explanation:
T1 draws 0.55 A and T2 draws 0.45 A, T1 will get more heated and correct increase. Ultimately,
I1 = 1A and I2 = 0.
19. The number of p-n junctions in a semiconductor diode are
A. 0
B. 1
C. 2
D. 1 or 2
Answer: Option B
Explanation:
Semiconductor diode has one p-n junction, BJT has two and SCR has three p-njunctions.
20. Assertion (A): A high junction temperature may destroy a diode.
Reason (R): As temperature increases the reverse saturation current increases.

Answer: Option A
Explanation:
Both A and R are correct. The diode is destroyed due to high reverse current.
21. When a diode is not conducting, its bias is
A. forward
B. zero
C. reverse
D. zero or reverse
Answer: Option D
Explanation:
Diode conducts only when forward biased. There is no conduction when

bias is zero or reverse.
22. The SCR would be turned OFF by voltage reversal of applied anode-
cathode ac supply of frequency of
A. 30 kHz
B. 15 kHz
C. 5 kHz
D. 20 kHz
Answer: Option C
Explanation:
For inverter grade SCR, typical turn off time (toff) is 5 to 50 μsec while
50 to 100 μsec for converter grade SCR.
Hence supply frequency of 5 kHz will turn off the SCR by voltage
reversal
because = 200 μsec.
23. The number of valence electrons in a donor atom is
A. 2 B. 3
C. 4 D. 5
Answer: Option D
Explanation:
Therefore, it can donate one electron.
24. An electron rises through a voltage of 100 V. The energy acquired by it

will be
A. 100 eV
B. 100 joules
C. (100)1.2 eV
D. (100)1.2 joules
Answer: Option A
Explanation:
When an electron rises through 1 V, energy = 1 eV.
25. Measurement of hall coefficient enables the determination of

A. mobility of charge carriers
B. type of conductivity and concentration of charge carriers
C. temperature coefficient and concentration of charge carriers
D. fermi level and forbidden energy gap
Answer: Option B
Explanation:
Hall effect can be used to find type and concentration of charge

carriers.
26. A Varactor diode has
A. a fixed capacitance
B. a fixed inductance
C. a voltage variable capacitance
D. a current variable inductance
Answer: Option C
Explanation:
The applied bias governs the width of depletion layer. Therefore, capacitance varies with bias.
27. The most important set of specifications of transformer oil includes
A. dielectric strength and viscosity
B. dielectric strength and flash point
C. flash point and viscosity
D. dielectric strength, flash point and viscosity

Answer: Option D
Explanation:
Oil used in transformer work as cooling as well as dielectric strength.
28. Assertion (A): In Hall effect the O.C. transverse voltage developed by a current carrying
semiconductor with a steady magnetic field perpendicular to the current direction has opposite
signs for n and p semiconductors.
Reason (R): The magnetic field pushes both holes and electrons in the same direction.
Answer: Option A
Explanation:
Holes and electrons move in opposite directions. Therefore R is wrong.
29. A voltage of 9 V is applied in forward direction to a semiconductor diode in series with a load
resistance of 1000 Ω. The voltage across the load resistance is zero. It indicates that
A. diode is short circuited
B. diode is open circuited
C. resistor is open circuited
D. diode is either o.c or s.c

Answer: Option B
Explanation:
Since there is no voltage across load resistor, the current is zero and diode is open-circuit. If diode
is short- circuited or resistor is open-circuited almost 9 V will appear across resistor.
30. If the drift velocity of holes under a field gradient of 100 V/m in 5 m/s, their mobility (in
SI units) is
A. 0.05 B. 0.5
C. 50 D. 500
Answer: Option A
Explanation:
.
31. The derating factor for a BJT transistor is about
A. 0.5 mW/°C
B. 2.5 mW/°C
C. 10 mW/°C
D. 25 mW/°C
Answer: Option B
Explanation:
For every 1°C rise in ambient temperature the power dissipation must
be reduced by 2.5 mW so that transistor is safe.
32. An intrinsic silicon sample has 2 million free electrons. The number of
holes in the sample is
A. 2 million
B. almost zero
C. more than 2 million
D. less than 2 million
Answer: Option A
Explanation:
In intrinsic semiconductor, the number of free electrons is equal to

number of holes.
33. Assertion (A): When reverse voltage across a p-n junction is

increased, the junction capacitance decreases.
Reason (R): Capacitance of any layer is inversely proportional to

thickness.
Answer: Option A
Explanation:
Increase in reverse voltage increases the width of depletion layer and

decrease of capacitance of layer.
34. In an n type semiconductor

A. number of free electrons and holes are equal
number of free electrons is much greater than the number

B.
of holes
number of free electrons may be equal or less than the

C.
number of holes
number of holes is greater than the number of free

D.
electrons
Answer: Option B
Explanation:
Therefore, in n type semiconductor electrons are majority carriers.
35. Mobility of electrons and holes are equal.
A. True B. False
Answer: Option B
Explanation:
Mobility of electrons is more than that of holes.

36. Electrons can be emitted from a metal surface due to high electric field.
A. True B. False
Answer: Option A
Explanation:
This is called field emission.
37. In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the
concentration of donor atoms is increased to three times. The new position of Fermi level will be
A. 0.35 eV below conduction band
B. about 0.32 eV below conduction band
C. about 0.32 eV above conduction band
D. about 0.1 eV below conduction band
Answer: Option B
Explanation:
Therefore, conductivity increases.
38. Assertion (A): In a BJT, the base region is very thick.
Reason (R): In p-n-p transistor most of holes given off by emitter diffuse through the base.
Answer: Option D
Explanation:
Base region is thin.
39. Assertion (A): The behaviour of FET is similar to that of a pentode.
Reason (R): FETs and vacuum triode are voltage controlled devices.

Answer: Option A
Explanation:
Low work function permits easy emission.
40. SCR can be turned on by
1. applying anode voltage at a sufficient fast rate

2. applying sufficiently large anode voltage
3. increasing the temperature of SCR to a sufficiently
4. applying sufficiently large gate current.
A. 1, 2, 4 only
B. 4 only
C. 1, 2, 3, 4
D. none
Answer: Option C
Explanation:
If we apply the anode voltage above breakover voltage of SCR, SCR can be triggered. Also by
sufficiently fast rate of rise of anode voltage and large gate current will trigger SCR on.
During forward blocking most of the applied voltage appears across reverse biased junction J2.
This voltage across J2 associated with leakage current may rise temperature of this junction.
With increase in temperature, leakage current through junction J2 further increases and this
cumulative process may turn on the SCR at some high temperature.
41. In a bipolar transistor
A. recombination in base regions of both n-p-n and p-n-p transistor is low
B. recombination in base regions of both n-p-n and p-n-p transistors is high
recombination in base region of n-p-n transistor is low but that in p-n-ptransistor is

C.
high
recombination in base region of p-n-p transistor is low but that in n-p-ntransistor is

D.
high
Answer: Option A
Explanation:
Base is very thin and therefore recombination is minimum in both p-n-p and n-p-ntransistors.
42. If for a silicon n-p-n transistor, the base to emitter voltage (VBE) is 0.7 V and the collector to base
voltage VCB is 0.2 Volt, then the transistor is operating in the
A. normal active mode
B. saturation mode
C. inverse active mode
D. cut off mode
Answer: Option A
Explanation:
Transistor will operate in active mode because
VBE = 0.7 volt, (Base emitter junction is forward biased)
VCB = - VBC = - 0.2 V (Base to collector junction is reverse biased).

43. The number of doped regions in a bipolar junction transistor is
A. 1 B. 2
C. 3 D. 4
Answer: Option C
Explanation:
p, n, p or n, p, n.
44. Donor energy level is n type semiconductor is very near valence band.
A. True B. False
Answer: Option B
Explanation:
It is near conduction band.
45. GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in the
A. visible region of the spectrum
B. infrared region of the spectrum
C. ultraviolet region of the spectrum
D. for ultraviolet region of the spectrum
Answer: Option B
Explanation:
GaAs has very large band gap and high carrier mobility.
46. Which of the following is basically a voltage controlled capacitance?
A. Zener diode
B. Diode
C. Varactor diode
D. LED
Answer: Option C
Explanation:
Therefore, varactor is used for tuning in TV.
47. When the i-v curve of a photodiode passes through origin the illumination is
A. maximum
B. minimum
C. zero
D. equal to rated value
Answer: Option C
Explanation:
i is plotted on y-axis and v on x-axis. When passing through origin current can be zero only.
48. An n type silicon bar 0.1 cm long and 100 μm2 in cross-sectional area has a majority carrier
concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an
electron is 1.6 x 10-19 coulomb, then the resistance of the bar is
A. 106 ohm
B. 104 ohm
C. 10-1 ohm
D. 10-4 ohm
Answer: Option C
Explanation:
Resistance of bar(R) =
l = 0.1 cm, A = 100 x 10-6 m2
σ = neμn + Peμp
But bar is of n type then it can be approximated to σ = neμn.
49. The threshold voltage of a MOSFET can be lowered by
1. using thin gate oxide

2. reducing the substrate concentration
3. increasing the substrate concentration.
Of the above statement
A. 3 alone is correct
B. 1 and 2 are correct
C. 1 and 3 are correct
D. 2 alone is correct
Answer: Option C
Explanation:
Increasing the substrate concentration lowers threshold voltage. Gate oxide layer has no effect an
threshold voltage.
50. In which device does the extent of light controls the conduction
A. photovoltaic cell
B. photo electric relay
C. LED
D. photo sensitive device
Answer: Option D
Explanation:
The resistance of photosensitive device depends on the light.
Section 4
1. An increase in junction temperature of a semiconductor diode
A. causes a small increase in reverse saturation current
B. causes a large increase in reverse saturation current
C. does not affect reverse saturation current
may cause an increase or decrease in reverse saturation current depending on rating of

D.
diode
Answer: Option B
Explanation:
Reverse saturation current doubles for every 10°C rise in junction temperature.
2. An air gap provided in the iron core of an inductor prevents
A. flux leakage
B. hysteresis loss
C. core saturation
D. heat generation
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
3. Generally, the gain of a transistor amplifier falls at high frequency due to the
A. internal capacitance of the device
B. coupling capacitor at the I/P
C. skin effect
D. coupling capacitor at the O/P
Answer: Option A
Explanation:
4. Which of these has a layer of intrinsic semiconductor?
A. Zener diode
B. PIN diode
C. Photo diode
D. Schottky diode

Answer: Option B
Explanation:
The intrinsic layer is in between p and n layers.
5. Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be
exceeded.
Reason (R): A high inverse voltage can destroy a p-n junction.
Answer: Option A
Explanation:
PIV is an important parameter in rectifier operation.
6. A Si sample is doped with a fixed number of group N impurities. The electron density nis
measured from 4 K to 1200 k for the sample. Which one of the following is correct?
A. n remains constant over the temperature range
B. n increases monotonicaliy with increasing temp
n increases first remains constant over a range and again increases with
C.
increasing temperature
D. n increases show a peak and then decrease with temperature
Answer: Option B
Explanation:
7. Assertion (A): In design of circuit using BJT, a derating factor is used.
Reason (R): As the ambient temperature increases, heat dissipation becomes slower.
Answer: Option A
Explanation:
Increase of ambient temperature lowers the heat dissipation capacity.
Therefore derated operation of BJT is necessary lest BJT should be destroyed.
8. If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is
A. 0.05 B. 0.5
C. 50 D. 500
Answer: Option A
Explanation:
E = μ . Vd μ= .

9. In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic
carrier concentration is 1.5 x 1010/ cm3 the electron concentration is
A. zero
B. 1010/cm3
C. 105/cm3
D. 1.5 x 1025/cm3
Answer: Option C
Explanation:
Electron concentration .
10. The behaviour of a JFET is similar to that of
A. NPN transistor
B. PNP transistor
C. SCR
D. Vacuum triode
Answer: Option D
Explanation:
Both JFET and vacuum triode are voltage controlled devices.
11. What is the effect of cut in voltage on the wave form of output as compared to input in a
semiconductor diode?
A. The duration of output waveform is less than 180°
B. Output voltage is less than input voltage

C. Output voltage is more than input voltage
D. Both (a) and (b)
Answer: Option D
Explanation:
Since the duration of output waveform is less than 180°, output voltage is less than input voltage.
12. As temperature increases the number of free electrons and holes in an intrinsic semiconductor
A. increases
B. decreases
C. remains the same
D. may increase or decrease
Answer: Option A
Explanation:
Increase of temperature increases conductivity of semiconductors.
13. At room temperature kT = 0.03 eV.
A. True B. False
Answer: Option A
Explanation:

14. Assertion (A): A JFET behaves as a resistor when VGS < VP.
Reason (R): When VGS < VP, the drain current in a JFET is almost constant.
Answer: Option C
Explanation:
15. In a reverse biased P-N junction, the current through the junction increases abruptly at
A. zero voltage
B. 1.2 V
C. 0.72 V
D. breakdown voltage
Answer: Option D
Explanation:
16. Dielectric strength of polythene is around
A. 10 kV/mm
B. 40 kV/mm
C. 100 kV/mm
D. 140 kV/mm
Answer: Option B
Explanation:
17. Resistivity of hard drawn copper is
A. less than that of annealed copper
B. more than that of annealed copper
C. same as that of annealed copper
D. decreasing when temperature increases
Answer: Option B
Explanation:
18. The channel of JFET consists of
A. p type material only
B. n type material only
C. conducting material
D. either p or n type material

Answer: Option D
Explanation:
The channel in JFET may be n type or p type. If channel is n type, gate is p type and if channel
is p type gate is n type.
19. In a bipolar junction transistor dc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is
A. 635 mA
B. 735 mA
C. 835 mA
D. 935 mA
Answer: Option B
Explanation:
20. The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor
filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
A. 100 V
B. 88 V
C. 50 V
D. 25 V
Answer: Option A
Explanation:
21. Assertion (A): The forward resistance of a p-n diode is not constant.
Reason (R): The v-i characteristics of p-n diode is non-linear.
Answer: Option A
Explanation:
If v-i characteristics is non linear, the ratio v-i is not constant.
22. For a photoengraving the mask used is
A. master mask
B. slave mask
C. working mask
D. photo mask
Answer: Option C
Explanation:
The mask that is prepared first is called the master mask made from glass substrates covered by
thin chromium film.
From the master masks are prepared working masks by contact pointing and used for
Photolithography which means Photo engraving.
23. In a varactor diode the increase in width of depletion layer results in
A. decrease in capacitance
B. increase in capacitance
C. no change in capacitance
D. either (a) or (b)
Answer: Option A
Explanation:
Capacitance is inversely proportional to distance between plates.
24. In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the
diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes
approximately equal to
A. 747 mV
B. 660 mV
C. 680 mV
D. 700 mV

25. The work function of a photo surface whose threshold wave length is 1200 A, will be
A. 0.103 eV
B. 0.673 eV
C. 1.03 eV
D. 1.27 eV
Answer: Option C
Explanation:
26. The diameter of an atom is
A. 10-6 metre
B. 10-10 metre
C. 10-15 metre
D. 10-21 metre
Answer: Option B
Explanation:
27. N-type silicon is obtained by doping silicon with
A. germanium B. aluminium
C. boron D. phosphorus

Answer: Option D
Explanation:
28. When a p-n junction is reverse biased
A. holes and electrons move away from the junction
B. holes and electrons move towards the junction
C. holes move towards junction and electrons move away from junction
D. holes move away from junction and electrons move towards junction
Answer: Option A
Explanation:
Holes and electrons move away from junction and therefore resistance increases to a high value.
29. If a sample of germanium and a sample of Si have the impurity density and are kept at room
temperature then
A. both will have equal value of resistivity
B. both will have equal -ve resistivity
C. resistivity of germanium will be higher than that of silicon
D. resistivity of Si will be higher than of germanium
Answer: Option D
Explanation:
Since the majority of charge carrier is better in Ge than in Si, for the same concentration of
charge carriers, the conductivity of Ge is higher than that of Si.
30. When a large number of atoms are brought together to form a crystal
the energy levels of inner shell electrons are affected appreciably by the presence of
A.
other neighbouring atoms.
The energy levels of outer shell electrons are affected appreciably by the presence of
B.
other neighbouring atoms.
the energy levels of both inner and outer shell electrons are affected appreciably by the
C.
presence of other neighbouring atoms.
D. none of the above.
Answer: Option B
Explanation:
Inner shell electrons are tightly bound to the nucleus. Their energy levels cannot be affected by
presence of other atoms.
31. Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of
4.2 V if C(0) = 80 pf and VT = 0.7 V
A. 42 pf
B. 153.03 pf
C. 13.33 pf
D. Data inadequate
Answer: Option A
Explanation:
, Here n = for diffused junction

.
32. At room temperature the barrier potential in a silicon diode is
A. 0.1 V
B. 0.3 V
C. 0.7 V
D. 1V
Answer: Option C
Explanation:
This 0.7 V is also called cut in voltage. When forward voltage is 0.7 V or less there is no current.
33. The cut in voltage of a diode is nearly equal to
A. applied forward voltage
B. applied reverse voltage
C. barrier potential
Answer: Option C
Explanation:
34. Assertion (A): In a BJT base current is very small.
Reason (R): In a BJT recombination in base region is high.
Answer: Option C
Explanation:
Recombination in base region is very low.
35. A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion
layer is
A. 0V
B. 0.7 V
C. about 10 V
D. 18 V
Answer: Option D
Explanation:
Almost whole of reverse voltage is across depletion layer.
36. As temperature increases the forbidden gap in silicon increases.

A. True B. False
Answer: Option B
Explanation:
With increase in temperature, the forbidden gap decreases.
37. Assertion (A): Germanium is more commonly used than silicon.
Reason (R): Forbidden gap in germanium is less than that in silicon.
Answer: Option D
Explanation:
A is wrong because germanium is rarely used.
38. Which of the following devices has substrate?
A. JFET
B. Depletion Type MOSFET
C. Enhancement type MOSFET
D. Both (b) and (c)

Answer: Option D
Explanation:
All MOSFETs have substrate.
39. Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.
Reason (R): Photo electric emission can occur only if frequency of incident light is less than
threshold frequency.
Answer: Option C
Explanation:
Photo electric emission occurs only if frequency is higher than threshold frequency thus R is
wrong.
40. In degenerate p type semiconductor material, the Fermi level,
A. is in the valence band
B. is in conduction band
C. is at the centre in between valence and conduction bands
D. is very near conduction band
Answer: Option A
Explanation:
This is due to heavy doping.
41. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive
device.
Answer: Option D
Explanation:
When exposed to light bulk resistance decreases. Therefore, A is wrong.
42. As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode
A. is more
B. is less
C. may be more or less
D. is almost the same
Answer: Option A
Explanation:
Tunnel diode has heavily doped p and n regions.

43. In active filter circuits, inductances are avoided mainly because they
A. are always associated with some resistance
B. are bulky and unsuitable for miniaturisation
C. are non-linear in nature
D. saturate quickly
Answer: Option B
Explanation:
In active circuit, Inductors are used by Op-Amp resistors and capacitor instead of simple inductor.
44. When a p-n-p transistor is operating in active region, the current in the n region is due to
A. only holes
B. only electrons
C. mainly holes
D. mainly electrons
Answer: Option C
Explanation:
Since emitter is p-type, emitter current is mainly due to holes. This current diffuses through the
base.
45. In a JFET
A. drain current is very nearly equal to source current
B. drain current is much less than source current

C. drain current may be equal to or less than source current
D. drain current may be even more than source current
Answer: Option A
Explanation:
Since gate current is very small. ID and Is are almost equal.
46. Consider the following statements: The function of oxide layer in an IC device is to
1. mask against diffusion or non implant

2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer
Of these statements:
A. 1, 2, 3 are correct
B. 1, 3, 4 are correct
C. 2, 3, 4 are correct
D. 1, 2, 4 are correct
Answer: Option D
Explanation:
Oxide layer cannot have any effect on melting point of silicon. Moreover before melting silicon
breaks down.
47. An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity
atoms. The number of electrons and holes is
A. 3 million each
B. 6 billion each
C. 3 million free electrons and very small number of holes
D. 3 million holes and very small number of free electrons
Answer: Option C
Explanation:
When pentavalent impurity is added, the number of fresh electrons is very large as compared to
number of holes.
48. In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about
A. 0.1 F
B. 4 μF
C. 10 nF
D. 20 pF
Answer: Option D
Explanation:
49. Photoconductive devices uses
A. metallic conductors
B. good quality insulators
C. semiconductors

Answer: Option C
Explanation:
50. Assertion (A): Oxide coated cathodes are very commonly used.
Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure
tungsten.
Answer: Option A
Explanation:
Lower work function leads to higher emission current. Therefore oxide coated cathodes are
commonly used.
Section 5
1. A JFET operates in ohmic region when
A. VGS = 0
B. VGS is less than pinch off voltage
C. VGS = is Positive
D. VGS = VDS
Answer: Option B
Explanation:
2. In CE connection, the leakage current of a transistor is about
A. 10 x 10-9 A
B. 5 x 10-6 A
C. 200 x 10-6 A
D. 5 x 10-3 A
Answer: Option C
Explanation:
3. The early effect in a BJT is caused by
A. fast turn on
B. fast turn off
C. large collector base reverse bias
D. large emitter base forward bias
Answer: Option C
Explanation:
4. In a common emitter BJT amplifier, the maximum usable supply voltage is limited by
A. avalanche Beakdown of Base-Emitter junction
B. collector emitter breakdown voltage with base open(βVCEO)
C. collector emitter breakdown voltage with emitter open(βVCEO)
D. zener break down voltage of the emitter base junction
5. Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly
constant.
Reason (R): Base current in CE connection is very small.
Answer: Option A
6. The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic
emission current is about
A. 0.1% B. 4%
C. 50% D. 150%
Answer: Option D
Explanation:

7. Consider the following statement: At finite temperature, magnetic dipoles in a material are
randomly oriented giving low magnetization. When magnetic field H is applied, the magnetization?
1. Increases with H
2. Decreases with H
3. Decreases with temp for constant H
Which of the statement given above is/are correct?
A. 1
B. 2
C. 2, 3
D. 1 and 3
Answer: Option D
Explanation:
8. Ferrites have
A. low copper loss
C. low resistivity
D. higher specific gravity compared to iron
Answer: Option C
Explanation:

9. Eg is the band gap, A is pre-factor, k is Boltzmann constant? Which one of the following is the
remaining grade of paper used in paper capacitor, besides the other two grade of paper-low and
extra low loss?
A. Strong dielectric
B. Regular
C. Rough
D. High loss
Answer: Option B
Explanation:
10. Barkhausen criterion of oscillation is
A. Aβ > 1
B. Aβ = 1
C. Aβ = < 1
D. Aβ ≤ 1
Answer: Option B
11. The current through a PN Junction diode with v volts applied to the P region to the N region,
where (I0 is the reverse saturation current to the diode, m the ideality factor, kthe Boltzmann
constant, T the absolute temperature and q the magnitude of charge on an electron) is
A. I0 (e-qv/mkT - 1)
B. I0 e-qv/mkT
C. I0 (1 - eqv/mkT)
D. I0 (eqv/mkT - 1)

Answer: Option B
Explanation:
12. The ratio of diffusion constant for hole DP to the mobility for holes is proportional to
A. T2 B. T
C. 1/T D. T3
Answer: Option B
Explanation:
13. The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in
m2/s).
A. 0.43 B. 0.16
C. 0.04 D. 0.01
Answer: Option B
Explanation:
14. During induction heating of metals which of the following is abnormally high?
A. Frequency
B. Voltage
C. Current
D. Power factor
Answer: Option A
Explanation:
15. Assertion (A): Alkali metals are used as emitters in phototubes.
Reason (R): Alkali metals have low work functions.
Answer: Option A
Explanation:

16. The output v-i characteristics of enhancement type MOSFET has
A. only an ohmic region
B. only a saturation region
C. an ohmic region at low voltage value and a saturation region at high voltage
D. a saturation region at low voltage value and an ohmic region at high voltage
Answer: Option C
Explanation:
17. In a full wave rectifier, the current in each of the diodes flows for
A. the complete cycle of the input signal
B. half cycle of the input signal
C. less than half cycle of the input signal
D. one-fourth cycle of the input signal
Answer: Option B
Explanation:
18. In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C)
is such that
A. E>B>C
B. B>C>E
C. C>E>B
D. C=E=B
Answer: Option A
Explanation:

19. The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier
will be nearly
A. 1 kVA
B. 350 VA
C. 175 VA
D. 108 VA
Answer: Option B
Explanation:
20. When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes
the barrier potential.
A. True B. False
Answer: Option A
Explanation:
21. Which rectifier has the best ratio of rectification?
A. Half wave rectifier
B. Full wave rectifier
C. Bridge rectifier
D. Three phase full wave rectifier

Answer: Option D
Explanation:
22. Assertion (A): A p-n junction is used as rectifier.
Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse
direction.
Answer: Option A
Explanation:
23. In an integrated circuit the SiO2 layers provide
A. electrical connection to external Ckt.
B. physical strength
C. isolation
D. conducting path.
Answer: Option C
Explanation:
24. For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V
is given by
A. 40 kΩ
B. 2.5 kΩ
C. 4.44 kW
D. 120 kW
Answer: Option A
Explanation:
25. Which of the following are voltage controlled devices?
A. Vacum triode
B. FET
C. SCR
D. Both (a) and (b)
Answer: Option D
Explanation:

26. Which of the following is known as insulated gate FET?
A. JFET
B. MOSFET
C. Both JFET and MOSFET
D. None of the above
Answer: Option B
Explanation:
27. Assertion (A): The hybrid  model of a transistor can be reduced to h parameter model and vice
versa.
Reason (R): Hybrid  and h parameter models are interrelated as both of them describe the
same device.
Answer: Option A
Explanation:
28. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?
A. Phosphorus B. Boron
C. Arsenic D. Antimony
Answer: Option B
Explanation:
29. An insulator will conduct when the
A. voltage applied is more than the breakdown voltage
B. temperature is raised to very high level
C. either (a) or (b) above
Answer: Option C
Explanation:
30. Zener breakdown occurs
A. due to rapture of covalent band
B. mostly in germanium junctions
C. in lightly doped junctions
D. due to thermally generated minority carriers
Answer: Option A
Explanation:
31. The maximum power handling capacity of a resistor depends on
A. total surface area
B. resistance value
C. thermal capacity of the resistor
D. resistivity of the material used in the resistor
Answer: Option C
Explanation:
32. Epitaxial growth is used in ICs
A. because it produces low parasitic capacitance
B. because it yields back to back isolating pn Junction
C. to grow single crystal n doped silicon on a single crystal P-type substrate
to grow Selectivity single crystal P doped silicon of one resistivity on a P

D.
type substrate of a different resistivity
Answer: Option D
Explanation:

33. The mean life time of carrier may range from 10-9 seconds to hundreds of μ-seconds.
A. True B. False
Answer: Option A
Explanation:
34. In which mode of BJT operation are both junctions forward biased?
A. Active
B. Saturation
C. Cut off
D. Reverse active
Answer: Option B
Explanation:
35. Addition of a small amount of antimony to germanium will result in
A. formation of P-type semiconductor
B. more free electrons than holes in the semiconductor
C. antimony concentrating on the edges of the crystals
D. increased resistance

Answer: Option A
Explanation:

36. In intrinsic semiconductor
magnitude of free electron and
hole concentrations are equal.
A. True B. False
Answer: Option A
Explanation:
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37. A P-N junction offers
A. high resistance in forward as well as reverse direction
B. low resistance in forward as well as reverse direction
C. conducts in forward direction only
D. conducts in reverse direction only
Answer: Option C
Explanation:
38. In modern MOSFETS, the material used for the gate is
A. high purity silicon

B. high purity silica
C. heavily doped polycrystalline silicon
D. epitaxial grown silicon
Answer: Option C
Explanation:
39. Consider the following circuit configuration
1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.
The correct sequence in increasing order of I/P impedance of these configuration:
A. 2, 1, 4, 3
B. 1, 2, 4, 3
C. 2, 1, 3, 4
D. 1, 2, 3, 4
Answer: Option B
Explanation:
40. Assertion (A): Field emission is substantially independent of temperature.
Reason (R): When a high electric field is created at metal surface field emission may occur.
Answer: Option B
Explanation:
41. In a p-n-p transistor operating in forward active mode
A. base is positive with respect to emitter and collector
B. base is negative with respect to emitter and collector
C. emitter is positive with respect to base and base is positive with respect to collector
D. emitter is negative with respect to base and base is positive with respect to collector
Answer: Option C
Explanation:
42. Consider the following statements.
1. Etching
2. Exposure to UV radiation
3. Stripping
4. Developing
After a wafer has been coated with photo resist the correct sequence of these steps in
photolithography is
A. 2, 4, 3, 1
B. 2, 4, 1, 3
C. 4, 2, 1, 3
D. 3, 2, 3, 1
Answer: Option C
Explanation:
43. If both the emitter base and the collector base junctions of a bipolar transistor are forward biased,
the transistor is in the
A. active region
B. saturated region
C. cut off region
D. inverse mode
Answer: Option B
Explanation:
44. In a triode the potential of grid (with respect to cathode) is usually
A. zero
B. negative
C. positive
D. zero or positive
Answer: Option B
Explanation:
45. A varactor diode is
A. reverse biased
B. forward biased
C. biased to breakdown
D. unbiased
Answer: Option A
46. Fermi level in intrinsic semiconductor is at the centre of forbidden energy band.
A. True B. False
Answer: Option A
Explanation:
47. In a photo transistor the photocurrent is
A. emitter base junction
B. collector base junction

C. collector
Answer: Option B
Explanation:
48. In photoelectric emission the maximum kinetic energy of emitted electron is proportional to
A. f
B. f
C. f2
D. f3
Answer: Option B
Explanation:
49. In a P-type semiconductor, the conductivity due to holes (= σP) is equal to e = charge of hole,
μP = hole mobility, P = hole concentration,
A.
B.
C. P.e.μP
D.
Answer: Option C
Explanation:
50. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field.
The resulting electric field inside the speciment will be in
A. direction normal to both current and magnetic field
B. the direction of current
C. direction antiparallel to magnetic field
D. an arbitrary direction depend upon conductivity
Answer: Option A
Explanation:
Section 6
1. In P-N junction, the region containing the uncompensated acceptor and donor ions is called
A. transition zone
B. depletion region
C. neutral region
D. active region
Answer: Option B
Explanation:
2. In a photodiode the current is due to
A. majority carriers
B. minority carriers
C. both majority and minority carriers
Answer: Option B
Explanation:
3. Consider the following statements
1. Acceptor level lies close the valence band.

2. Donor level lies close to the valence band.
3. n type semiconductor behaves as an insulator at 0 K.
4. p type semiconductor behaves as an insulator at 0 K.
Of these statements:
A. 2 and 3 are correct

D. 3 and 4 are correct
Answer: Option C
Explanation:
4. If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier

concentration is doubled, then
A. the majority carrier density doubles
B. the minority carrier density doubles
C. the minority carrier density becomes 4 times the original value
D. both majority and minority carrier densities double
Answer: Option D
Explanation:
5. Assertion (A): The conductivity of an n type semiconductor increases with increase in

temperature and increase in density of donor atoms.
Reason (R): Diffusion of carriers occurs in semiconductors.

Answer: Option B
6. The conductivity of materials found in nature ranges from 109 ohm-1m-1 to nearly 1018ohm-1 m-
1 from this it can be concluded that the conductivity of silicon in ohm -1 cm-1will be nearly
A. 0.5 x 10-15
B. 0.5 x 10-21
C. 0.5 x 10-12
D. 0.5 x 10-3
Answer: Option D
Explanation:
7. At any point on the v-i characteristics of a semiconductor diode, the slope of v-icharacteristics is
called
A. resistance of diode
B. conductance of diode
C. incremental resistance of diode
D. incremental conductance of diode
Answer: Option D
Explanation:

8. The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off
current (ICB0) as
A. ICE0 = ICB0
B. ICE0 = a ICB0
C.
ICE0 =
D.
ICE0 =
Answer: Option C
Explanation:
9. Which of the following statement about the photo electric emission is incorrect?
A. The maximum velocity of emission varies with the frequency of incident light
B. The maximum velocity of emission varies with the intensity of light
C. The amount of photoelectric emission is directly proportional to the intensity of light
D. The quantum yield depends on the frequency and not the intensity of incident light
Answer: Option B
Explanation:

10. In a semiconductor avalanche breakdown occurs when
A. reverse bias exceeds the limiting value
B. forward bias exceeds the limiting value
C. forward current exceeds the limiting value
D. potential barrier is reduced to zero
Answer: Option A
11. No load d.c. output will be least in case of
A. half wave rectifier
B. full wave rectifier
C. bridge rectifier
D. three phase full wave rectifier
Answer: Option A
Explanation:
12. When an electron breaks a covalent bond and moves away,
A. a hole is created
B. a proton is also lost
C. atom becomes an ion

D. rest of the electron move at a faster rate
Answer: Option A
Explanation:
13. A photo diode is
A. forward biased
B. reverse biased
C. either forward or reverse biased
D. unbiased
Answer: Option B
Explanation:
14. Germanium and Si phosphorus have their maximum spectral response in the
A. infrared region
B. ultraviolet region
C. visible region
D. X-ray region

Answer: Option B
Explanation:
15. In which condition does BJT behave like a closed switch?
A. Cut off
B. Saturation
C. Forward active
D. Reverse active
Answer: Option B
Explanation:
16. High purity copper is obtained by
A. rolling casting
B. casting
C. electrolytic refining
D. induction heating
Answer: Option C
Explanation:
17. Photo electric emission can occur only if the frequency of light is more than threshold frequency.
A. True B. False
Answer: Option A
Explanation:
18. In a JFET the width of channel is controlled by
A. gate voltage
B. drain current
C. source current
D. all of the above
Answer: Option A
Explanation:
19. The unit of thermal resistance of a semi-conductor device is
A. Ohms B. Ohms/°C
C. °C/ohm D. °C/watt
Answer: Option D
Explanation:
20. Figure represents a
A. Varactor
B. LED
C. Zener diode
D. Temperature dependent diode
Answer: Option D
21. For generating 1 MHz frequency signal, the most suitable circuit is
A. phase shift oscillator
B. weinbridge oscillator
C. colpitt's oscillator
D. clapp oscillator
Answer: Option C
Explanation:
22. A doped semi-conductor is called

A. impure semi-conductor
B. dipole semi-conductor
C. bipolar semi-conductor
D. extrinsic semi-conductor
Answer: Option B
Explanation:
23. In n type MOSFET, the substrate
A. is p type
B. is n type
C. is metallic
D. may be p or n type
Answer: Option A
Explanation:
24. The first and the last critical frequency of an RC driving point impedance function must
respectively by
A. a zero and a pole

B. a zero and a zero
C. a pole and a pole
D. a pole and a zero
Answer: Option A
Explanation:
25. The diffusion current is proportional to
A. applied electric field
B. concentration gradient of charge carrier
C. square of the electric field
D. cube of the applied electric field
Answer: Option B
26. In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
A. P+ -doped
B. n+ -doped
C. used to reduce the parasitic capacitance
D. located in the emitter region
Answer: Option C
Explanation:
27. Which quantity controls the effectiveness of LED in emitting light?
A. Applied voltage
B. Current
C. Extent of doping
D. Temperature
Answer: Option D
Explanation:
28. The current gain of a BJT is
A. gm r0
B. gm/r0
C. gm rp
D. gm/rp
Answer: Option C
Explanation:

29. Ferromagnetic materials exhibit
A. a linear B-H behaviour
B. a non-linear B-H behaviour
C. an exponential B-H behaviour
Answer: Option B
Explanation:
30. The saturation current in a semi-conductor diode
A. depends on forward voltage
B. depends on reverse voltage
C. is due to thermally generated minority carriers
Answer: Option C
31. When a ferromagnetic substance is magnetised, there are small changes in its dimensions. This
phenomenon is called
A. hysteresis
B. magnetostriction
C. diamagnetism
D. bipolar relaxation
Answer: Option B
Explanation:
32. Gold is often diffused into silicon PN junction devices to
A. increase the recombination rate
B. reduce the recombination rate
C. make silicon a direct gap semiconductor
D. make silicon semimetal
Answer: Option C
Explanation:
33. In the figure shows the circuits symbol of

A. FET B. PMOSFET
C. CMOSFET D. NMOSFET
Answer: Option D
Explanation:
34. Assertion (A): FET is a unipolar device.
Reason (R): BJT is bipolar device.
Answer: Option B
Explanation:
35. Ferrites are
A. ferromagnetic materials
B. ferrimagnetic materials
C. ferroelectric materials
D. ferri-ferromagnetic materials
Answer: Option A
36. In a p-n-p transistor the main current carriers and the mechanism of flow respectively are
A. electrons, drift
B. holes, drift
C. holes, diffusion
D. electrons, diffusion
Answer: Option C
Explanation:
37. The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The
minimum value of R, so that the voltage across it does not fall below 6 V is
A. 1.2 kΩ
B. 80 Ω
C. 50 W
D. 0
Answer: Option B
Explanation:
38. Secondary emission occurs in
A. diode B. triode
C. tetrode D. pentode
Answer: Option C
Explanation:
39. In common base connection, the output characteristics of a bipolar junction transistor is drawn
between
A. IC and VCB
B. IC and VCE
C. IE and VCB
D. IE and VCE
Answer: Option A
Explanation:

40. In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually
A. 2 B. 3
C. 4 D. 6
Answer: Option D
41. Consider the following statements about diamagnetic material and diamagnetism.
1. The materials have negative magnetic susceptibility.

2. At very low temperature diamagnetic materials.
Which of the statements given above is/are correct?
A. 1 only
B. 2 only
C. Both 1 and 2
D. neither 1 nor 2
Answer: Option A
Explanation:
42. In a photo emissive device and emission efficiency is increased by
A. coating the cathode ray by an active materials
B. coating the cathode by an insulating material
C. heating the cathode

D. cooling the anode
Answer: Option A
Explanation:
43. Materials in order of decreasing electrical conductivity are
A. aluminium, silver, gold, copper
B. gold, silver, copper, aluminium
C. copper, silver, gold, aluminium
D. silver, copper, gold, aluminium
Answer: Option D
Explanation:
44. Transconductance characteristics of JFET depict the relation between
A. ID and VGS for different value of VDS
B. ID and VDS for different value of VGS
C. VGS and VDS for different values of ID
D. VDS and ID for different values of VGS

Answer: Option A
Explanation:
45. The resistivity of intrinsic semiconductor material is about
A. 105 ohm-m
B. 103 ohm-m
C. 100 ohm-m
D. 1 ohm-m
Answer: Option D
46. Which of the following exhibits negative resistance in a portion of its characteristics?
A. Tunnel diode
B. Zener diode
C. JFET
D. MOSFET and tunnel diode
Answer: Option A
Explanation:
47. The emission of light is LED due to

A. emission of holes
B. emission of electrons
C. generation of electromagnetic radiations
D. conversion of heat energy into illumination
Answer: Option C
Explanation:
48. For bipolar transistor
A.
B.
C.
D.
Answer: Option A
Explanation:
49. The sum of two or more arbitrary sinusoidal is

A. always periodic
B. periodic under certain conditions
C. never periodic
D. periodic only if all the sinusoidals are identical in frequency and phase
Answer: Option D
Explanation:
50. Which of the following is used as a passive component in electronic circuits?
A. Tunnel diode
B. Capacitor
C. Transistor
D. Vacuum tube
Answer: Option B
Section 7
1. Lowest resistivity of the following is
A. constantan
B. german silver
C. manganin
D. nichrome
Answer: Option B
Explanation:
2. Peak inverse voltage will be highest for
C. bridge rectifier
Answer: Option B
Explanation:
3. In CE configuration, the output characteristics of a bipolar junction transistor is drawn between
A. IC and VCB
B. IE and VCB
C. IC and VCE
D. IE and VCE
Answer: Option C
Explanation:
4. Assertion (A): The reverse current in a p-n junction is nearly constant.
Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.
Answer: Option B
Explanation:
5. An n type semiconductor is illuminated by a steady flux of photons with energy greater than the
band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess
electron (hole) density ].
A. Δσ = 0
B. Δσ = e(σn + σp) Δn
C. Δσ = e(μnΔn - μpΔp)
D. Δσ = e μnΔn
Answer: Option B
6. Resistivity of metals is expressed in terms of
A. μ ohm
B. μ ohm/cm
C. μ ohm-cm
D. μ ohm-cm/°C
Answer: Option C
Explanation:
7. Figure shows characteristics curves for bipolar transistor. These curves are
A. output characteristics of n-p-n transistor (common base)
B. output characteristics of p-n-p transistor (common base)
C. output characteristics of n-p-n transistor (common emitter)

D. output characteristics of p-n-p transistor (common emitter)
Answer: Option B
Explanation:
8. Zener diode is invariably used with
A. forward bias
B. reverse bias
C. either (a) or (b)
D. zero bias
Answer: Option B
Explanation:
9. The relation between plate current and plate voltage of a vacuum diode is called
A. Richardson Dushman equation
B. Langmuir Child law
C. Ohm's law
D. Boltzmann's law

Answer: Option B
Explanation:
10. Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e--
hole pair generation will be
A. 5400 mm
B. 540 mm
C. 5400 Å
D. 540 Å
Answer: Option C
11. The maximum rectification efficiency in case of full wave rectifier is
A. 100% B. 81.2%
C. 66.6% D. 40.6%
Answer: Option B
Explanation:
12. For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be
A. 50 Hz
B. 100 Hz
C. 200 Hz
D. 400 Hz
Answer: Option B
Explanation:
13. When an electron rises through a potential of 100 V it will acquired an energy of
A. 100 eV
B. 100 Joules
C. 100 ergs
D. 100 x 10-6 Newtons
Answer: Option A
Explanation:
14. Which one of the following gain equations is correct for a MOSFET common-source amplifier?
(gm is mutual conductance, and RD is load resistance at the drain)
A. AV = gm/(1 - RD)
B. AV = gm/RD
C. AV = gm/(1 + RD)
D. AV = RD/gm
Answer: Option B
Explanation:
15. If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be
least in case of
C. bridge rectifier
Answer: Option D
16. Which of the following is the ferric electric material?
A. Rochelle salt
B. Barium titanate
C. Potassium dihydrogen phosphate
D. All of the above
Answer: Option D
Explanation:

17. The amount of time between the creation and disappearance of a hole in an intrinsic
semiconductor material is called
A. life cycle
B. recombination time
C. life time
D. half life
Answer: Option C
Explanation:
18. In photo electric emission, the threshold frequency f0, work function Uw, and Planck's
constant h are related as
A.
B.
C. f0 = (Uw)(h)2
D. h = (Uw)(f0)
Answer: Option A
Explanation:

19. In which n type device does p substrate extend upto silicon dioxide layer?
A. JFET
B. Depletion type MOSFET
C. Enhancement type MOSFET
D. Both (b) and (c)
Answer: Option C
Explanation:
20. In a N-type semi-conductor, the concentration of minority carriers is mainly depends on
A. the number of acceptor atoms
B. the number of donor atoms
C. the extent of doping
D. the temperature of the material
Answer: Option D
21. The band gap of Si at room temperature is
A. 1.3 eV
B. 0.7 eV
C. 1.1 eV
D. 1.4 eV

Answer: Option C
Explanation:
22. Spot the odd one out
A. aluminium B. silver
C. porcelain D. copper
Answer: Option C
Explanation:
23. Transition capacitance is associated with __________ and depletion capacitance is

associated with __________ diodes.
A. reverse bias and forward bias
B. forward bias and reverse bias
C. reverse bias and reverse bias
D. forward bias and forward bias
Answer: Option C
Explanation:

A. Tunnel diode
B. PNP transistor
C. Photo sensitive diode
D. Photo emissive diode
Answer: Option A
Explanation:
25. If the energy gap of a semiconductor is 1.1 eV, then it would be.
A. opaque to the visible light
B. transparent to the visible light
C. transparent to the ultraviolet radiation
D. opaque to the infrared radiation
Answer: Option A
26. The primary reason for the widespread use of Si in semiconductor device technology is
A. abundance of Si on the surface of earth
B. larger band gap of Si in comparison to Ge

C. favourable properties of Silicon-dioxide (SiO2)
D. lower melting point
Answer: Option C
Explanation:
27. If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be
nearly
A. 65 B. 6.5
C. 0.65 D. 0.065
Answer: Option B
Explanation:
28. Reluctivity is analogous to
A. permeability B. conductivity
C. resistivity D. retentivity
Answer: Option C
Explanation:

29. The v-i characteristics of a diode may be linear or non linear.
A. True B. False
Answer: Option B
Explanation:
30. If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is
proportional to
A. N2dF
B. Nd2F
C.
D.
Answer: Option D
31. Under low level injection assumption, the infected minority carrier current for an extrinsic
semiconductor is essentially the
A. diffusion current
B. drift current
C. recombination current
D. induced current
Answer: Option A
Explanation:
32. As the reverse voltage is increased, the depletion layer
A. becomes narrow
B. widens
C. remains the same
D. reduce to zero
Answer: Option B
Explanation:
33. The cascade amplifier is a multistage configuration of
A. CC-CB B. CE-CB
C. CB-CC D. CE-CC
Answer: Option B
Explanation:

34. The light output of LED varies as (current)n. The value of n is about
A. 0.5 B. 1
C. 1.3 D. 2.1
Answer: Option C
Explanation:
35. If an electron move through a potential difference of 500 V, the energy possesses by it will be
A. 500 ergs
B. 500 joules
C. 500 eV
D. 500 mV
Answer: Option C
36. In which of the following does a negative resistance region exist in the v-icharacteristics?
A. PIN diode
B. Schottky diode
C. Tunnel diode
D. Zener diode
Answer: Option C
Explanation:
37. The intrinsic resistivity of silicon at 300 K is about
A. 1 Ω-cm
B. 400 Ω-cm
C. 10000 Ω-cm
D. 230000 Ω-cm
Answer: Option D
Explanation:
38. What happens when forward bias is applied to a junction diode?
A. Majority carrier current is reduced to zero
B. Minority carrier current is reduced to zero
C. Potential barrier is increased
D. Potential barrier is decreased
Answer: Option D
Explanation:

39. A differential amplifier is invariably used in the I/P stage of all OP-amps. This is done basically to
produce the OP-amp with a very high.
A. CMRR
B. bandwidth
C. slew rate
D. open-loop gain
Answer: Option D
Explanation:
40. The addition of impurity in extrinsic semiconductor is about 1 part in 108 parts.
A. True B. False
Answer: Option A
41. Hall effect can be used
A. to find type of semiconductor (whether p or n)
B. to find carrier concentration
C. to measure conductivity
D. all of the above
Answer: Option D
Explanation:
42. The v-i characteristic of an element is shown in below figure the element is
A. non-linear, active, non-bilateral
B. linear, active, non-bilateral
C. non-linear, passive, non-bilateral
D. non-linear, active, bilateral
Answer: Option D
Explanation:
43. Diffusion constants Dp, Dn mobility μp, μn and absolute temperature T are related as
A.
B.
C.
D.
Answer: Option A
Explanation:
44. The probability giving distribution of electrons over a range of allowed energy levels is known as
A. Maxwell's Distribution
B. Fermi-Dirac Distribution
C. Richardson Dushman Distribution
Answer: Option B
Explanation:
45. Hall coefficient is reciprocal of charge density.
A. True B. False
Answer: Option A
46. It is required to trace the output characteristics of a CE bipolar transistor on a CRO screen. The
proper method is
apply the voltage drop across collector resistance to Y input, disconnect sweep
A.
generator and apply VCE to X input
B. apply voltage drop across collector resistance to Y input
C. apply VCE to X input
apply VCE to Y input, disconnect the sweep generator and apply voltage drop across
D.
collector resistance to X input
Answer: Option A
Explanation:
47. Atomic number of germanium is
A. 24 B. 28
C. 32 D. 36
Answer: Option C
Explanation:
48. The resistivity of ferrites is
A. very much lower than that of the ferromagnetic metals
B. slightly lower than that of the ferromagnetic materials
C. slightly higher than that of the ferromagnetic metals

D. very much higher than that of the ferromagnetic metals
Answer: Option D
Explanation:
49. A JFET
A. is current controlled device
B. has low input resistance
C. has high gate current
D. is a voltage controlled device
Answer: Option D
Explanation:
50. In monostable multivibrator
A. has no stable state
B. has one stable state
C. has two stable states
D. switches automatically from one state to other state

Answer: Option B
Section 8
1. Assertion (A): Hall effect is used to find the type of semiconductor.
Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the
force on electrons and holes is in opposite directions.
Answer: Option A
Explanation:
2. The fT of a BJT is related to its gm, C and Cμ as follows.
A.
B.
C.
D.
Answer: Option D
Explanation:
3. When a p-n junction is forward biased. The width of depletion layer decreases.
A. True B. False
Answer: Option A
Explanation:
4. In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a
load, will be least?
A. Half wave rectifier
B. Full wave rectifier
C. Bridge type full wave rectifier
D. Three phase full wave rectifier
Answer: Option D
Explanation:

5. When a p-n Junction is forward biased
A. the current flow is due to electrons only
B. the majority carriers in both p and n materials are driven toward the junction.
C. the majority carriers in both p and n materials are away from the junction.
D. both (a) and (c).
Answer: Option B
6. In a JFET, the drain current is maximum when
A. VGS = 0
B. VGS is not zero but is slightly negative
C. VGS is negative
D. VGS is negative and equal to VDS
Answer: Option A
Explanation:
7. A potential difference is developed across a current carrying metal strip when the strip is placed in
a transverse magnetic field. The above effect is known as
A. Fermi's effect
B. Photo electric effect
C. Joule's effect
D. Hall's effect
Answer: Option D
Explanation:
8. In a zener diode
A. forward voltage rating is high
B. negative resistance characteristics exists
C. sharp breakdown occurs at low reverse voltage
Answer: Option C
Explanation:
9. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr)
for similar geometry?
A. NPN germanium transistor
B. NPN silicon transistor
C. PNP germanium transistor
D. PNP silicon transistor
Answer: Option B
Explanation:
10. The depletion layer across a P+ n junction lies
A. mostly in the P+ region
B. mostly in n region
C. equally in both the P+ and n-region
D. entirely in the P+ region
Answer: Option A
11. An increase of reverse voltage decreases the junction capacitance.
A. True B. False
Answer: Option A
Explanation:
12. The maximum forward current in case of signal diode is in the range of
A. 1 A to 10 A
B. 0.1 A to 1 A
C. few milli amperes
D. few nano amperes

Answer: Option C
Explanation:
13. On which of the following effect do thermocouples work?
A. Thomson effect
B. Seeback effect
C. Peltier effect
D. Joule effect
Answer: Option B
Explanation:
14. Which of the following constitutes an active component?
A. Semiconductor device
B. Resistors
C. Capacitors
D. Inductors
Answer: Option A
Explanation:
15. Which of the following characteristics of a silicon p-n junction diode make it
suitable for use as ideal diode?
1. It has low saturation current.

2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower
degree of temperature dependence under reverse conditions.
Select the answer using the given below
A. 1 and 2
B. 1, 2, 3, 4
C. 2, 3, 4
D. 1, 3
Answer: Option B
16. Resistivity of carbon is around
A. 10 to 70 m-ohm-cm
B. 80 to 130 m-ohm-cm
C. 800 to 1300 m-ohm-cm
D. 8000 to 13000 m-ohm-cm
Answer: Option C
Explanation:
17. Which of the following is anti-ferromagnetic material?
A. CrSb
B. NIO
C. MnO
D. All of the above
Answer: Option D
Explanation:
18. Assertion (A): The capacitance of a reverse biased pin diode is lower
than that of reverse biased p-n diode.
Reason (R): A PIN diode has an intrinsic layer

between p and n regions.
Answer: Option A
Explanation:
19. In the saturation region of CE output characteristics of n-p-n transistor,

VCE is about
A. 0.5 V
B. 15 V
C. - 0.5 V
D. - 15 V
Answer: Option A
Explanation:
20. In n channel JFET
A. ID and VDS are positive but VGS is negative
B. ID and VGS are positive but VDS is negative
C. VDS and VGS are positive but ID is negative
D. ID, VDS and VGS are all positive
Answer: Option A
A. Esaki diode
B. Triac
C. Varactor
D. Gunn diode
Answer: Option C
Explanation:
22. Almost all resistors are made in a monolithic integrated circuit
A. during the entire diffusion
B. while growing the epitaxial layer
C. during the base diffusion
D. during the collector diffusion
Answer: Option A
Explanation:
23. The forbidden energy gap for silicon is
A. 0.12 eV
B. 1.12 eV
C. 0.72 eV
D. 7.2 eV
Answer: Option B
Explanation:
24. In energy band diagram of n type semiconductor, the donor energy

level is
A. in valence band
B. in conduction band
C. slightly above valence band
D. slightly below conduction band
Answer: Option D
Explanation:
25. For an n-channel JEFT having drain source voltage constant if the gate
source voltage is increased (more negative) pinch off would occur for
A. high values of drain current
B. saturation values of drain current
C. zero drain current

D. gate current equal to the drain current
Answer: Option C
26. An intrinsic semiconductor (intrinsic electron density = 1016 m-3) is deped with donors to a
level of 1022 m-3. What is the hole density assuming all donors to be ionized?
A. 107 m-3
B. 108 m-3
C. 1010 m-3
D. 106 m-3
Answer: Option D
Explanation:
27. The capacitor filter provides poor voltage regulation because
A. the increase in ripple with load current causes a decrease in average voltage
B. the increase in ripple with load current causes a increase in average voltage
C. filter promotes ripple at peak voltage
Answer: Option A
Explanation:

28. If Vr is the reverse voltage across a graded P-N Junction, then the junction capacitancecj is
proportional to
A. (Vr)2 B. (Vr)n
C. (Vr)-n D. (Vr)3/2
Answer: Option B
Explanation:
29. In the schematic representation of bipolar junction transistor, the direction of arrow shows the
direction of flow of
A. holes
B. electrons
C. holes in pnp and electrons in npn
D. electrons in pnp and holes in npn
Answer: Option A
Explanation:
30. Conductivity σ, mobility μ and Hall coefficient KH are related as
A. μ = σKH
B. σ = μKH
C. KH = μσ
D. KH =(μσ)1.1
Answer: Option A
31. The forbidden band in semiconductors is of the order of
A. 6 eV
B. 1 eV
C. 10 eV
D. 0.01 eV
Answer: Option B
Explanation:
32. For an P-N-P transistor in normal operation its junction are biased as
A. emitter base : reverse, collector base : forward
B. emitter base : forward, collector base : reverse
C. emitter base : forward, collector base : forward
D. emitter base : reverse, collector base : reverse
Answer: Option B
Explanation:

33. A FET is to be operated as voltage variable resistor. For this drain to source voltage VDSshould be,
A. 74
B. = VP
C. < VP
D. > VP
Answer: Option C
Explanation:
34. Assertion (A): FET has characteristics very similar to that of pentode.
Reason (R): Both FET and pentode are voltage controlled devices.
Answer: Option A
Explanation:

35. The current gain of a bipolar transistor drops at high frequencies because of
A. transistor capacitance
B. high current effects in the base
C. parasitic inductive elements
D. the early effect
Answer: Option A
36. In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is
proportional to
A. T B. T2
C. T3 D. T4
Answer: Option C
Explanation:
37. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).
A. generally less than that a doped semiconductor
B. σi = eni (μn - μp)
C. σi = eni (μn + μp)
D. σi = ni (μn - μp)

Answer: Option C
Explanation:
38. The current due to thermionic emission is proportional to
A. T B. T2
C. T3 D. T4
Answer: Option B
Explanation:
39. For radiating ultraviolet rays, LEDs use
A. zinc sulphide
B. gallium arsenide
C. gallium phosphide
Answer: Option A
Explanation:

40. Addition of a small amount of antimony to germanium will result in
A. formation of p-type semiconductor
B. more free electrons than holes in semiconductor
C. antimony concentrating on the edges of the crystal
D. increased resistance
Answer: Option A
41. Consider the following statements about conditions that make a metal semiconductor contact
rectifying
1. N type semiconductor with work function φs more than work function φM of metal
2. N type semiconductor with work function φs less than work function φM of metal
3. P type semiconductor with work function φs more than work function φM of metal
4. P type semiconductor with work function φs less than work function φM of metal.
Of these statements
Answer: Option A
Explanation:
42. Silicon diodes have __________ reverse resistance than germanium diodes.
A. a much smaller
B. a much larger
C. an infinite
D. a negligible
Answer: Option B
Explanation:
43. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
A. intensity of the incident radiation
B. wavelength of the incident radiation
C. surface conditions of the surface
D. angle of incidence of radiation
Answer: Option B
Explanation:
44. When reverse bias is applied to a junction diode
A. minority carrier current is increased
B. majority carrier current is increased
C. potential barrier is lowered
D. potential barrier is raised

Answer: Option D
Explanation:
45. Which of the following statements regarding two transistor model of p-n-n-p device is correct?
A. It explain only the turn on portion of the device characteristics
B. It explain only the turn off portion of the device characteristics
C. It explain only the negative region portion of the device characteristics
D. It explain all the regions of the device characteristics
Answer: Option D
46. Highest resistivity of the following is
A. nichrome B. constantan
C. metal D. manganin
Answer: Option A
Explanation:
47. Lowest noise can be expected in case of
A. carbon composition resistors

B. carbon film resistors
C. tin oxide resistors
D. metal film resistors
Answer: Option D
Explanation:
48. For a BJT, under the saturation condition,
A. IC = βIB
B. IC = IB
C. IC is independent of all other parameters
D. IC < βIB
Answer: Option D
Explanation:
49. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the
heated is positive the semiconductor is
A. P-type
B. n-type
C. intrinsic
D. highly degenerate
Answer: Option D
Section 9
1. The O/P char, of a FET is given in the figure. In which region is the device biased for small signal
amplification?
A. AB B. BC
C. CD D. BD
Answer: Option B
Explanation:
2. Photoelectric effect occurs only in semiconductors and not in metals.
A. True B. False
Answer: Option B
Explanation:
3. Which of these has peak and valley points in v-i curve?
A. Tunnel diode
B. Zener diode
C. PIN diode
D. Schottky diode
Answer: Option A
Explanation:
4. The scaling factor of an MOS device using constant voltage scaling model, the gate area of the
device will be scaled as
A. 1/
B. 1/2
C. 1/3
D. 1/4
Answer: Option D
Explanation:
5. A full wave bridge rectifier is supplied voltage at 50 Hz. The lowest ripple frequency will be
A. 400 Hz
B. 200 Hz
C. 100 Hz
D. 50 Hz
Answer: Option C
6. Electric breakdown strength of a material depends on its
A. composition
B. moisture content
C. thickness
D. all of the above
Answer: Option D
Explanation:
7. The atomic weight of an atom is determined by
A. the number of protons
B. the number of neutrons

C. the number of protons and neutrons
D. the number of electrons and protons
Answer: Option C
Explanation:
8. The minimum charge carried by an ion is
A. zero
B. equal to the change of an electron
C. equal to the change of a pair of electrons
D. equal to the change of electrons left in the atom
Answer: Option B
Explanation:
9. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in

silicon is about
A. 15 x 104 per cm3
B. 5 x 1012 per cm3
C. 1.45 x 1010 per cm3

D. 1.45 x 106 per cm3
Answer: Option C
Explanation:
10. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be
concluded that
more number of electron-hole pairs will be generated in silicon than in

A.
germanium at room temperature
less number of electron hole pairs will be generated in silicon than in

B.
germanium at room temperature
equal number of electron-hole pairs will be generated in both at lower

C.
temperatures
equal number of electron-hole pairs will be generated in both at higher

D.
temperatures
Answer: Option B
11. A long specimen of P type semiconductor material
A. is + vely charged
B. is electrically neutral
C. has an electric field directed along its length
D. acts as a dipole
Answer: Option B
Explanation:
12. For BJT, under saturation condition
A. IC = βIB
B. IC > bIB
C. IC is independent of all other parameters
D. IC < βIB
Answer: Option B
Explanation:
13. An inductor filter has a ripple that __________ with load resistance and consequently is used only
with relatively __________ load currents.
A. decreases, low
B. decreases, high
C. increases, low
D. increases, high
Answer: Option D
Explanation:

14. In a JFET
A. the source gate junction is forward biased and gate drain junction is reverse biased
B. both the junctions are forward biased
C. both the junctions are reverse biased
D. the source gate junction is reverse biased and gate drain junction is forward biased
Answer: Option C
Explanation:
15. Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating
point against variations in
A. only the temperature
B. only β of the transistor
C. both temperature and β
D. none of these
Answer: Option C
16. Consider the following statement S1 and S2.
S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in

the base is increased.
Which one of the following is correct?

A. S1 is False, S2 is true
B. S1 and S2 both are true
C. S1 and S2 both are false
D. S1 is true, S2 is false
Answer: Option D
Explanation:
17. Assertion (A): A BJT can be used as a switch.
Reason (R): In forward active mode emitter base junction is forward

biased and base collector junction is reverse biased.
Answer: Option B
Explanation:
18. The concentration of minority carriers in an extrinsic semiconductor

under equilibrium is
A. directly proportional to the doping concentration
B. inversely proportional to doping concentration
C. directly proportional to intrinsic concentration
D. inversely proportional to the intrinsic concentration
Answer: Option B
Explanation:
19. The mean life time of the minority carriers is in the range of a few
A. seconds
B. milli seconds
C. micro seconds
D. nano seconds
Answer: Option D
Explanation:
20. Choose the correct match for input resistance of various amplifier
configurations shown below configuration.
CB : Common Base LO : Low

CC : Common Collector MO : moderate
CE : Common Emitter HI: High
A. CB-LO, CC-MO, CE-HI
B. CB-LO, CC-HI, CE-MO
C. CB-MO, CC-HI, CE-LO
D. CB-HI, CC-LO, CE-MO
Answer: Option B
21. The resistivity of a semiconductor
A. increases as the temperature increases
B. decreases as the temperature increases
C. remains constant even when temperature varies
Answer: Option B
Explanation:
22. The voltage at which Avalanche occurs is known as
A. cut in voltage
B. barrier voltage
C. breakdown voltage
D. depletion voltage
Answer: Option C
Explanation:
23. If the energy gap of a semiconductor is 1.1 eV, then it would be
A. opaque to visible light
B. transparent to visible light
C. transparent to ultraviolet radiation
D. transparent to infrared radiation
Answer: Option A
Explanation:
24. In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about
A. 2% B. 6%
C. 15% D. 25%
Answer: Option B
Explanation:

25. The ripple factor for a bridge rectifier is
A. 0.406 B. 1.21
C. 1.11 D. 2.22
Answer: Option B
26. Which of the following semi-conductor has forbidden energy gap less 1
eV?
A. Sulphur B. Phosphorous
C. Germanium D. Carbon
Answer: Option C
Explanation:
27. In the vacuum diode equation ib = keb1.5, the current is
A. temperature limited current
B. space charge limited current
C. any of the above
Answer: Option B
Explanation:

28. Thermosetting polymers are
A. injection moulded
B. extruded
C. cast moulded
Answer: Option C
Explanation:
29. Which of these is used in seven segment display?
A. PIN diode
B. LED
C. Photo diode
D. Tunnel diode
Answer: Option B
Explanation:
30. The current in a p-n junction diode with V volts applied in p region
relative to n region (where I0 is reverse saturation current, m is ideality
factor, k is Boltzmann's constant, T is absolute temp and q is charge on
electron) is
A. I0 (e-qV/mkT - 1)
B. I0 e-qV/mkT
C. I0 (eqV/mkT)
D. I0 (eqV/mkT - 1)
Answer: Option D
31. In the BJT amplifier shown in the figure is the transistor is biased in the forward
active region. Putting a capacitor across RE will
A. decrease the voltage gain and decrease the I/P impedance
B. increase the voltage gain and decrease the I/P Impedance
C. decrease the voltage gain and Increase the I/P impedance
Answer: Option B
Explanation:

32. In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap
and one of the ends of the secondary. The maximum voltage across the reverse
biased diode will be
A. 100 V
B. 72 V
C. 50 V
D. 38 V
Answer: Option A
Explanation:
33. Consider the following statements.

The functions of an oxide layer in an IC device is to
1. mask against diffusion or ion implant

3. increase the melting point of silicon
4. produce a chemically stable protective layer of these statements.
A. 1, 2, 3
B. 1, 3, 4
C. 2, 3, 4
D. 1, 2, 4
Answer: Option D
Explanation:
34. The forbidden energy gap for germanium is
A. 0.12 eV
B. 0.32 eV
C. 0.72 eV
D. 0.92 eV
Answer: Option C
Explanation:
35. If the gate of JFET is reverse biased, the width of depletion region
A. becomes zero
B. is uniform
C. is more near the source
D. is more near the drain
Answer: Option D
36. If the atomic number of germanium is 32, the number of electrons in the outer most
shell will be
A. 2 B. 3
C. 4 D. 6

Answer: Option C
Explanation:
37. Dielectric loss due to polarisation occurs in
A. bipolar dielectrics
B. non-metallic dielectrics
C. liquid dielectrics
D. all of the above
Answer: Option A
Explanation:
38. A metal loses electrons at room temperature.
A. True B. False
Answer: Option B
Explanation:
39. Figure shows small signal common base transistor circuit.The current source I and
resistor R on the output side are
A.
ie and re
B. ie and (1 - )re
C. (1 - )ie and (1 - )re
D.  ie and re
Answer: Option D
Explanation:
40. Consider the following statement associated with bipolar junction transistor and JFET
1. The former has higher input impedance than the later

2. The former has higher frequency stability than the later
3. The later has lower noise figure than the former
4. The later has higher power rating than the former.
Of these statements

Answer: Option B
41. The turn off time of a bipolar
transistor is about
A. 0.5 ns
B. 10 ns
C. 70 ns
D. 150 ns
Answer: Option C
Explanation:
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42. Hystresis loss least depends on
A. frequency
B. magnetic field intensity
C. volume of the material
D. grain orientation of material
Answer: Option D
Explanation:

43. In a bipolar transistor, emitter efficiency is about
A. 0.99 B. 0.9
C. 0.8 D. 0.7
Answer: Option A
Explanation:
44. For signal diodes the PIV rating is usually in the range
A. 1 V to 10V
B. 10 V to 30V
C. 30 V to 150V
D. 150 V to 400V
Answer: Option C
Explanation:
45. The potential of suppressor grid (with respect to cathode) is usually
A. zero
B. negative
C. positive
D. zero or positive
Answer: Option A
46. In n type semiconductor, the free electron concentration
A. is nearly equal to density of donor atoms
B. is much greater than density of donor atoms
C. is much less than density of donor atoms
D. may be equal to or more or less than density of donor atoms
Answer: Option A
Explanation:
47. If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in
A. active region
B. saturated region
C. cut off region
D. inverse mode
Answer: Option B
Explanation:
48. Which of the following can be operated with positive as well as negative gate voltage?
A. JFET
B. Both JFET and MOSFET
C. MOSFET
D. Neither JFET nor MOSFET
Answer: Option C
Explanation:
49. The reverse breakdown voltage of a diode depends on the extent of doping.
A. True B. False
Answer: Option A
Explanation:
A. mobility of charge carriers
B. type of the conductivity and concentration of charge carriers

C. temperature coefficient and thermal conductivity
D. fermi level and forbidden energy gap
Answer: Option B
Section 10
1. At a P-N junction, the potential barrier is due to the charges on either side of the
junction, which consists of
A. fixed donor and acceptor ions
B. majority carriers only
C. minority carriers only
D. both majority and minority carriers
Answer: Option A
Explanation:
2. In a vacuum triode μ = rpgm.
A. True B. False
Answer: Option A
Explanation:

3. The material which has zero temperature coefficient of resistance is
A. manganin B. porcelain
C. carbon D. aluminium
Answer: Option A
Explanation:
4. When the light falling on a photodiode increases, the reverse minority current
A. increases
B. increases or decreases
C. decreases
D. remains the same
Answer: Option A
Explanation:
5. When a ferromagnetic substance is magnetised, small changes in dimensions occur.

Such a phenomenon is known as
A. magnetic hystresis
B. magnetic expansion
C. magneto striction
D. magneto calorisation
Answer: Option C
6. As the temperature of an
intrinsic semiconductor
material is increased
A. protons get excited
neutrons acquire
B.
charge
energy of the atom

C.
is increased
additional holes are

D. created in the
conduction band
Answer: Option C
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7. In an insulated gate FET, the polarity of inversion layer is the same as that of
A. minority carriers in source
B. majority carriers in source

C. charge on gate electrode
D. minority carriers in drain
Answer: Option B
Explanation:
8. Hall effect can be used to find the type of semiconductor.
A. True B. False
Answer: Option A
Explanation:
9. The conductivity of germanium increases by about 6 percent per degree increase in temperature.
A. True B. False
Answer: Option A
Explanation:
10. The range of visible light is

A. 300 to 2000 Å
B. 200 - 4000 Å
C. 4000 to 7700 Å
D. more than 10000 Å
Answer: Option C
11. Higher value of ripple factor indicates
A. poor rectification
B. ideal rectification
C. r.m.s. value to peak value
Answer: Option A
Explanation:
12. When a semi-conductor is doped, its electrical conductivity
A. increases
B. decreases in the direct ratio of the doped material
C. decreases in the inverse ratio of the doped material
D. remains unaltered
Answer: Option A
Explanation:
13. The conduction band is
A. same as forbidden energy gap
B. generally located on the top of the crystal
C. generally located on the bottom of the crystal
D. a range of energies corresponding to the energies of the free electrons
Answer: Option D
Explanation:
14. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits,
utilizing the full secondary of the transformer, how much d.c. power could be delivered using a
transformer with the rating of 105 VA?
A. 35 W
B. 60 W
C. 85 W
D. 100 W

Answer: Option C
Explanation:
15. In an n channel JFET, VGS = VGS(off). Then
A. ID is zero
B. ID may be zero or positive
C. ID is positive
D. ID may be zero or negative
Answer: Option A
16. In a bipolar transistor which current is smallest
A. collector current
B. base current
C. emitter current
D. any of the three currents
Answer: Option B
Explanation:

17. With increasing temperature, the electrical conductivity of metals
A. increases
B. decreases
C. increases first and then decreases
D. remains unaffected
Answer: Option B
Explanation:
18. The reverse saturation current in a semiconductor diode consists of
A. avalanche current
B. zener current
C. minority carrier current
D. minority carrier current and surface leakage current
Answer: Option D
Explanation:
19. The current gain of a transistor is the ratio of
A. emitter current to base current

B. emitter current to collector current
C. collector current to base current
D. collector current to emitter current
Answer: Option C
Explanation:
20. If a sample of Ge and a sample of Si have the same impurity density are kept at room
temperature
A. both will have equal value of resistivity
B. both will have equal - ve of resistivity
C. resistivity of germanium will be higher than that of silicon
D. resistivity of silicon will be higher than of Ge
Answer: Option D
21. Varactor diode is forward biased when it is used.
A. True B. False
Answer: Option B
Explanation:

22. A good ohmic contact on a P-type semiconductor chip is formed by introducing
A. gold as an impurity below the contact
B. high concentration of donors below the contact
C. high concentration of acceptors below the contact
D. thin insulator layer between the metal and semiconductor
Answer: Option B
Explanation:
23. The impurity added to extrinsic semiconductor is of the order of
A. 1 in 100
B. 1 in 1000
C. 1 in 100, 0000
D. 1 in 100, 000, 000
Answer: Option B
Explanation:
24. For a BJT, avalanche multiplication factor depends on
A. VCE B. VCB
C. VBE D. none
Answer: Option B
Explanation:
25. The impurity commonly used for realizing the base region of a n-p-n transistor is
A. gallium B. indium
C. boron D. phosphorus
Answer: Option C
26. Assertion (A): In CE connection of n-p-n transistor. VCE is positive.
Reason (R): In BJT, the base collector junction is reverse biased.
Answer: Option A
Explanation:

27. Assertion (A): Tunnel diode is used in many pulse and digital circuits.
Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
Answer: Option A
Explanation:
28. In ferromagnetic materials
A. the atomic magnetic moments are antiparallel and unequal
B. the atomic magnetic moments are parallel
C. the constituent is iron only
D. one of the constituents is iron
Answer: Option B
Explanation:
29. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?
A. Hartley oscillator
B. Colpitts oscillator
C. Crystal oscillator
D. Twin-T oscillator
Answer: Option A
Explanation:
30. The conductivity of an intrinsic semiconductor is
A. generally less than that of a doped semiconductor
B. given by σ1 = eni (μn - μp)
C. given by σ1 = eni (μp + μn)
D. given by σ1 = ni (μn + μp)
Answer: Option C
31. Which of the following materials has the highest electrical conductivity?
A. Steel B. Silver
C. Aluminium D. Zinc
Answer: Option B
Explanation:
32. In a bipolar transistor
A. the base is thick and highly doped
B. the base is thin and highly doped
C. the base is thick and lightly doped
D. the base is thin and lightly doped
Answer: Option D
Explanation:
33. Hay bridge is suitable for measuring inductance of which one of the following inductors?
A. Having Q value less than 10
B. Having Q value greater than 10
C. Having any value of Q
D. Having phase angle of reactance very large
Answer: Option B
Explanation:

34. When a substance is repelled by a magnetic field it is known as
A. ferromagnetic B. antiferromagnetic
C. diamagnetic D. paramagnetic
Answer: Option C
Explanation:
35. If μn is mobility of free electron and μp is mobility of holes then for silicon at 300 K
A. μn = μp
B. μn > μp
C. μn < μp
D. μn may be more or less than μp
Answer: Option B
36. In a specimen of n type semiconductor, the initial concentration of holes and electrons
ispno and nno. When the specimen is subjected to radiation, the hole and electron concentration
increase to pn and nn. Then
A. pn - pno = nn - nno
B. pn + pno = nn + nno
C. pn - pno = nno + nno
D. pn + pno = nn - pno
Answer: Option A
Explanation:
37. Which of the following diode is designed to operate in the breakdown region?
A. Signal diode
B. Power diode
C. Zener diode
Answer: Option C
Explanation:
38. Fill in the suitable word in the blanks is the following questions. The electron in the outermost
orbit is called __________ electron.
A. valence B. covalent
C. acceptor D. donor
Answer: Option A
Explanation:
39. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-njunction is
A. 5V
B. Slightly less than 5 V
C. 0.7 V
D. 0
Answer: Option C
Explanation:
40. In a triode
A. grid is nearer to cathode than anode
B. grid is nearer to anode than cathode
C. grid is equidistant from anode and cathode
D. any of the above
Answer: Option A
41. The output characteristics of a bipolar transistor has three distinct regions. They are known as
A. saturation region, active region and breakdown region
B. inactive region, active region and breakdown region
C. inactive region, saturation region and active region
D. inactive region, saturation region and breakdown region

Answer: Option A
Explanation:
42. Assertion (A): In a BJT, dc is about 0.98.
Reason (R): In a BJT, recombination in base region is high.
Answer: Option A
Explanation:
43. Wienbridge oscillator uses
A. -ve feedback
B. +ve feedback
C. both +ve, -ve feedback
D. feedback is not required
Answer: Option C
Explanation:
44. Which of the following material is preferred for transformer cores operating in micro wave
frequency range?
A. Ferrites
B. Silicon steel
C. Superalloy
D. Copper
Answer: Option A
Explanation:
45. The ac resistance of a forward biased p-n junction diode operating at a bias voltage V and carrying
current 'I' is
A. 0
B. constant value independent of V and I
C.
D.
Answer: Option C
46. Photoelectric emitters in photo tubes are generally made of
A. alkali metals
B. metals
C. semiconductors
D. metal and semiconductors
Answer: Option A
Explanation:
47. Assertion (A): Power transistors are more commonly of silicon npn type.
Reason (R): The fabrication of silicon npn transistors is easy.
Answer: Option A
Explanation:
48. In N-type semiconductor

A. electrons are majority carriers while holes are minority carriers
B. electrons are majority carriers while holes are majority carriers
C. both electrons as well as holes are majority carriers
D. both electrons as well as holes are minority carriers
Answer: Option A
Explanation:
49. The addition of n type impurity to intrinsic material creates allowable energy levels.
A. slightly below conduction band
B. slightly above conduction band
C. slightly below valence band
D. slightly above valence band
Answer: Option A
Explanation:
50. Which of the following elements act as donor impurities?
1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium
Select the correct answer using the codes given below:
A. 1, 2, 3
B. 1, 2, 4, 6
C. 3, 4, 5, 6
D. 1, 4, 5
Answer: Option D
Section 11
1. The depletion layer in a reverse biased p-n junction is due to the presence of
A. electrons
B. holes
C. both electrons and holes
D. immobile ions
Answer: Option D
Explanation:
2. Which materials find application in MASER?
A. Diamagnetic B. Paramagnetic
C. Ferromagnetic D. Ferrimagnetic
Answer: Option A
Explanation:
3. An electrically neutral semiconductor has
A. no free charges
B. no majority carriers
C. no minority carriers
D. equal number of positive and negative charges
Answer: Option D
Explanation:
4. Magnetic recording tape is most commonly made from
A. small particles of iron
B. silicon iron
C. ferric-oxide
D. silver nitrate

Answer: Option C
Explanation:
5. The circuit shown in the figure is best described as a
A. bridge rectifier
B. ring modulator
C. frequency discriminator
D. voltage doubler
Answer: Option D
6. Gold is often diffused into
silicon P-N junction devices to
increase
A.
recombination rate
reduce
B.
recombination rate
make silicon a
C. direct gap
semiconductor
make silicon
D.
semimetal
Answer: Option B
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7. In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is
A. positive
B. zero
C. negative
D. rated current
Answer: Option B
Explanation:
8. The forbidden energy gap between the valence band and conduction band will be wide in case of
A. semiconductors
B. all metals
C. good conductors of electricity
D. insulators
Answer: Option D
Explanation:
9. At 0 K the forbidden energy gap in intrinsic semi conductor is about
A. 10 eV
B. 6 eV
C. 1 eV
D. 0.2 eV
Answer: Option C
Explanation:
10. The resistance of a metallic wire would
A. increase as the operating frequency increase
B. decrease as the operating frequency increase
C. remain unaffected on increasing the operating frequency
D. first increase then decrease
Answer: Option B
11. Before doping the semiconductor material is
A. dehydrated B. heated
C. hardened D. purified
Answer: Option D
Explanation:
12. The atomic number of silicon is 14. It can be therefore concluded that
A. a silicon atom contains 14 protons
B. a silicon atom contains 14 neutrons
C. a silicon atom contains 14 electrons
D. all of the above
Answer: Option D
Explanation:
13. X-rays cannot penetrate through a thick sheet of
A. wood B. paper
C. lead D. aluminium

Answer: Option C
Explanation:
14. Ohmic range of metal film resistors is
A. 1 to 100 ohms
B. 10 to 1 K ohms
C. 100 to 1 M ohms
D. 100 to 100 M ohms
Answer: Option C
Explanation:
15. The current density J, free electron mobility μn,

hole mobility μp , magnitude of free electron and
hole concentration ni electric field E and charge on
electron e, in intrinsic semiconductor are related
as
A. J = (μn + μp)eniE
B.
J=
C.
J=
D.
J=
Answer: Option A
16. In order to achieve good stabilization in potential divider method current
I1 through R1and R2 should be
A. I1 > 20 IB
B. I1 > 15 IB
C. I1 < 5 IB
D. I1 > 10 IB
Answer: Option D
Explanation:
17. A sample of N type semiconductor has electron density of 6.25 x 108/cm2 at 300
K. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at
this temperature, the hole density works out to be
A. 106/cm3 B. 108/cm3
C. 1010/cm3 D. 10l2/cm3
Answer: Option B
Explanation:

18. Addition of 0.3 to 3.5% silicon to iron
A. increases the electrical resistivity of iron
B. decreases the electrical resistivity of iron
C. does not change electrical resistivity of iron
D. silicon can't be added with iron
Answer: Option A
Explanation:
19. A bistable multivibrator
A. has no stable state
B. has one stable state
C. has two stable state
Answer: Option C
Explanation:
20. Transconductance indicates the
A. control of output voltage by input voltage

B. control of output current by input voltage
C. control of input voltage by output current
D. control of input current by input voltage
Answer: Option B
21. In n channel JFET, the gate voltage is made more negative
A. the channel width will increase
B. the channel width will decrease
C. the channel width and drain current will decrease
D. the channel width will decrease and drain current will increase
Answer: Option C
Explanation:
22. Metals approach superconductivity conditions
A. near absolute zero temperature
B. near critical temperature
C. at triple point
D. under the conditions of high temperature and pressure
Answer: Option A
Explanation:
23. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective
base width caused by
A. electron-hole recombination at the base
B. reverse biasing of the base collector junction
C. forward biasing of emitter base junction
D. the early removal of stored base charge during saturation to cut off switching
Answer: Option B
Explanation:
24. At absolute zero temperature a semiconductor behaves like
A. an insulator
B. a super conductor
C. a good conductor
D. a variable resistor
Answer: Option A
Explanation:

25. In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency.
This is due to
A. applied load
B. internal compensation
C. impedance of the source
D. power dissipation in the chip
Answer: Option D
26. Which of the following material can be used in cable shields?
A. Copper
B. Aluminium
C. Cast iron
D. Lead
Answer: Option D
Explanation:
27. The charge of an electron is
A. 1.6 x 10-17 coulomb
B. 1.6 x 10-19 coulomb
C. 1.6 x 10-21 coulomb
D. 1.6 x 10-23 coulomb

Answer: Option B
Explanation:
28. The on voltage and forward breakover voltage of an SCR depend on
A. gate current alone
B. band gap of semiconductor alone
C. gate current and semiconductor band gap respectively
D. semiconductor band gap and gate current respectively
Answer: Option D
Explanation:
29. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
A. the conductivity of silicon will be less than that of germanium at room temperature
B. the conductivity of silicon will be more than that of germanium at room temperature
C. the conductivity of two will be same at 60°C
D. the conductivity of two will be same at 100°C
Answer: Option A
Explanation:
30. Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in
temperature.
Reason (R): The forbidden gap decreases with increase in temperature.
Answer: Option A
31. Typical value of reverse current in a semiconductor diode is
A. 1A
B. 0.1 A
C. 1 μA
D. 0.1 μA
Answer: Option D
Explanation:
32. Which of the following element has four valence electrons?
A. Silicon
B. Germanium
C. Both (a) and (b) above
Answer: Option C
Explanation:
33. In a transistor operating in forward active mode
depletion layer between emitter and base is thin and that

A.
between base and collector is also thin
B. both depletion regions are thick
depletion layer between emitter and base is thin and that

C.
between base and collector is thick
depletion layer between emitter and base is thick and that

D.
between base and collector is thin
Answer: Option C
Explanation:
34. In standard TTL, the 'totem pole' stage refers to
A. the multi-emitter I/P stage
B. phase splitter
C. the O/P buffer
D. open collector O/P stage
Answer: Option C
Explanation:
35. In p type semiconductor, the hole concentration
A. is nearly equal to density of acceptor atoms
B. is much greater than density of acceptor atoms
C. is much less than density of acceptor atoms
may be equal to or more or less than density of acceptor

D.
atoms
Answer: Option A
36. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier
(without any filter circuit), then the maximum voltage on the reverse-biased diode is
A. 200 V
B. 141.4 V
C. 100 V
D. 86 V
Answer: Option B
Explanation:
37. The O/P Power of a power amplifier is several times its input power. It is possible because
A. power amplifier introduces a -ve resistance
B. there is +ve feed back in the circuit
C. step up transformer is use in the circuit
D. power amplifier converts a part of I/P d.c. power into a.c. power
Answer: Option D
Explanation:
38. In p type semiconductor holes are majority carriers.
A. True B. False
Answer: Option A
Explanation:
39. Due to the formation of Schottky defects the density of the crystal
A. increases slightly
B. increases appreciably
C. decreases slightly
D. decreases appreciably
Answer: Option C
Explanation:
40. The band gap of silicon at 300K is
A. 1.36 eV
B. 1.10 eV
C. 0.80 eV
D. 0.67 eV
Answer: Option B
41. The current due to thermionic emission is given by Richardson Dushman equation.
A. True B. False
Answer: Option A
Explanation:
42. The thermionic emission current is given by

A. Fermi-Dirac distribution
B. Maxwell's equation
C. Richardson Dushman equation
D. Langmuir Child law
Answer: Option C
Explanation:
43. In forward active region, the operation of a BJT
emitter base junction is forward biased and base collector junction is reverse
C.
biased
emitter base junction is reverse biased and base collector junction is reverse
D.
biased
Answer: Option C
Explanation:

44. The conductivity of a semiconductor crystal due to any current carrier is not
proportional to
A. mobility of the carrier
B. effective density of states in the conduction band
C. electronic charge
D. surface states in the semiconductor
Answer: Option A
Explanation:
45. A P-N junction diode dynamic conductance is directly proportional to
A. the applied voltage
B. the temperature
C. its current
D. thermal voltage
Answer: Option C
46. The Ni-Zn ferrites are used for audio and TV transformers is that
A. they have large saturation magnetisation
B. they are easy to fabricate by rolling
C. they are free from pores and voids

D. they have high electro-resistivity
Answer: Option A
Explanation:
47. Hall's effect can be used to measure
A. magnetic field intensity
B. average number of holes
C. carriers concentration
D. electrostatic field intensity
Answer: Option A
Explanation:
48. For insulators the energy gap is of the order of
A. 0.1 eV
B. 0.7 eV
C. 1.1 eV to 1.2 eV
D. 5 to 15 eV

Answer: Option D
Explanation:
49. When electronic emission occurs due to bombardment of high velocity electrons on a metal
surface, it is called secondary emission.
A. True B. False
Answer: Option A
Explanation:
50. The reverse saturation current depends on the reverse bias.
A. True B. False
Answer: Option B
Section 12
1. One electron volt is equivalent to
A. 1.6 x 10-10 joule
B. 1.6 x 10-13 joule
C. 1.6 x 10-16 joule
D. 1.6 x 10-19 joule

Answer: Option D
Explanation:
2. Resistivity of electrical conductors is most affected by
A. Pressure B. temperature
C. composition D. ageing
Answer: Option B
Explanation:
3. Wiedemann-Franz law correlates
A. electrical and thermal conductivities
B. electron arrangement in shells
C. temperature and photo electric emission
D. all of the above
Answer: Option A
Explanation:
4. In bipolar transistors dc current gain is
A.
B.
C.
D.
Answer: Option B
Explanation:
5. Holes and electrons move in opposite directions.
A. True B. False
Answer: Option A
6. The energy of one quantum of light equal to hf.
A. True B. False

Answer: Option A
Explanation:
7. For most metals, Fermi level EF is less than
A. 0.1 eV
B. 2 eV
C. 5 eV
D. 10 eV
Answer: Option D
Explanation:
8. The spins in a ferrimagnetic material are
A. all aligned parallel
partially aligned antiparallel without exactly cancelling out sublattice

B.
magnetisation
C. randomly oriented
D. all aligned antiparallel such that the sublattice cancels out exactly

Answer: Option B
Explanation:
9. The permeability of soft iron can be increased by
A. purifying it
B. reducing carbon percentage
C. alloying with cobalt
D. increasing percentage
Answer: Option C
Explanation:
10. All of the following elements have three valence electrons EXCEPT
A. boron B. indium
C. gallium D. arsenic
Answer: Option D
11. What is the function of silicon dioxide layer in MOSFETS?
A. To provide high input resistance

B. To increase current carriers
C. To provide high output resistance
D. Both (a) and (c)
Answer: Option A
Explanation:
12. The modulation of effective base width by collector voltage is known as Early effect,
hence reverse collector voltage
A. increases both  and β
B. decrease both  and β
C. increase  but decrease β
D. decrease  but increase β

Answer: Option C
Explanation:
13. Assertion (A): In intrinsic semiconductors, the charge concentration increases with
temperature.
Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is
lower.
Answer: Option A
Explanation:
14. Covalent bond energy in Germanium is approximately
A. 3.8 eV
B. 4.7 eV
C. 7.4 eV
D. 12.5 eV
Answer: Option C
Explanation:

15. Which is correct for a vacuum triode?
A. μ = rpgm
B. rp = μgm
C. gm = μrp
D. rpgm
Answer: Option B
16. A 2 bit binary multiplier can be implemented using
A. 2 I/P only
B. 2 I/P XORs and 4 I/P and gates only
C. two 2 I/Ps NOR and one XNOR gate
D. XOR gates and shift Register
Answer: Option B
Explanation:
17. Secondary emission results
when temperature of metals is raised to a level above the crystallization

A.
temperature
B. when metals are subjected to strong magnetic fields
C. when light rays fall on the metal surface

D. when a high velocity beam of electrons strikes as metal surface
Answer: Option B
Explanation:
18. Ohmic range of carbon composition resistors is
A. 10 to 100 ohms
B. 10 to 10 K ohms
C. 10 to 200 ohms
D. 10 to 25 M ohms
Answer: Option D
Explanation:
19. The depletion layer consists of immobile ions.
A. True B. False
Answer: Option A
Explanation:
20. The output V-I characteristics of an Enhancement type MOSFET has
an ohmic region at low voltage value followed by a saturation region at higher

C.
voltages.
an ohmic region at large voltage values. Preceded by a saturation region at

D.
lower voltages.
Answer: Option C
21. A sample of N-type semiconductor has electron density of 6.25 x 10 18/cm3 at 300k. If
the intrinsic concentration of carriers in this sample is 2.5 x 10 13/cm3 at this temperature
the hole density works out to be
A. 106/cm3 B. 108/cm3
C. 1010/cm3 D. 10l2/cm3
Answer: Option B
Explanation:
22. Mobility is directly proportional to Hall coefficient.
A. True B. False

Answer: Option A
Explanation:
23. n channel FETs are better as compared to p-channel FET because
A. they are more efficient
B. they have high switching time
C. they have higher input impedance
D. mobility of electrons is more than that of holes
Answer: Option D
Explanation:
24. An n channel depletion type MOSFET has
A. lightly doped p substrate and highly doped n source and drain
B. highly doped p substrate and highly doped n source and drain
C. highly doped p substrate and lightly doped n source and drain
D. lightly doped n substrate and highly doped n source and drain

Answer: Option A
Explanation:
25. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the
avalanche breakdown will occur at
A. VDS = 22 V
B. VDS more than 22 V
C. VDS equal to or more than 22 V
D. VDS less than 22 V
Answer: Option D
26. The density of states (i.e. number of states per eV per m3) in the conduction band for
energy level E is proportional to
A. E
B. E
C. E1.5
D. E2
Answer: Option A
Explanation:

27. A-P type material has an acceptor ion concentration of 1 x 10 16 per cm3. Its intrinsic
carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m 2/V-
sec and 0.13 m2/V-sec respectively calculate the resistivity of the material
A. 12.5 Ω-cm
B. 1.25 Ω-cm
C. 0.125 Ω-cm
D. 125 Ω-cm
Answer: Option B
Explanation:
28. Resistivity is a property of a semiconductor that depends on
A. the atomic weight of the semiconductor
B. the atomic number of the semiconductor
C. the atomic nature of the semiconductor
D. the shape of the semiconductor
Answer: Option C
Explanation:

29. Operating point signifies that
A. zero signal IC and VBE
B. zero signal IC and VCE
C. zero signal IB and VCE
D. zero signal IC, VCE
Answer: Option B
Explanation:
A. Tunnel diode
B. Zener diode
C. Photo diode
D. Photo sensitive diode
Answer: Option B
31. Assertion (A): In n-p-n transistor conduction is mainly due to electrons.
Reason (R): In n type materials electrons are majority carriers.

Answer: Option A
Explanation:
32. The factor n in the equation for calculating current for a silicon diode is
A. 1
B. 2
C. 2.5
D. 2 for low levels of current and 1 for high levels of current
Answer: Option D
Explanation:
33. An LED is
A. an ohmic device
B. a display device
C. a voltage regulated device
D. all of the above
Answer: Option B
Explanation:
34. An enhancement mode MOSFET is on when the gate voltage is
A. zero
B. positive
C. high
D. more threshold value
Answer: Option D
Explanation:
35.
For the n-type semiconductor with n = NP and P = , the hole concentration will fall
below the intrinsic value because some of the holes
A. drop back to acceptor impurity states.
B. drop to donor impurity states
C. virtually leave the crystal
D. recombine with the electrons.
Answer: Option D
36. For a junction FET in the pinch off region as the drain voltage is increased, the drain
current
A. becomes zero
B. abruptly decreases
C. abruptly increases
D. remains constant
Answer: Option D
Explanation:
37. To avoid thermal runaway in the design of an analog circuit, the operating point of the
BJT should be such that it satisfies the condition.
A. VCE = VCC
B. VCE ≤ VCC
C. VCE ≥ VCC
D. VCE ≤ 0.78 VCC
Answer: Option B
Explanation:
38. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
A. surface potential is equal to Fermi potential
B. surface Potential is greater than Fermi potential
C. surface potential is - ve and equal to Fermi potential in magnitude
D. surface potential is + ve and equal to twice the Fermi potential
Answer: Option D
Explanation:
39. The primary function of a clamper circuit is to
A. suppress variations in signal voltage
B. raise +ve half cycle to the signal

C. Lower -ve half cycle of the signal
D. introduce a dc level into an a.c. signal
Answer: Option B
Explanation:
40. Breakdown in dielectric may be
A. electrical breakdown
B. thermal breakdown
C. electrochemical breakdown
D. any of the above
Answer: Option D
41. AE 139 is a
A. tunnel diode
B. germanium power transistor
C. photoconductive cell
D. silicon diode
Answer: Option B
Explanation:
42. The function off an oxide layer in an IC device is to
1. mask against diffusion or ion implantation

3. increase the melting point of Si
4. produce a chemically stable protective layer
A. 1, 2, 3
B. 1, 3, 4
C. 2, 3, 4
D. 4, 1, 2
Answer: Option D
Explanation:
43. The passage of current in an electrolyte is due to the movement of
A. electrons B. molecules
C. atoms D. ions
Answer: Option D
Explanation:
44. In a CE bipolar transistor operating in active region, collector current is independent of
A. VCE
B. IB
C. both VCE and IB
Answer: Option A
Explanation:
45. When a normal atom loses an electron
A. the atom loses one-proton simultaneously
B. rest of the electrons move faster
C. the atom becomes a positive ion
D. the atom becomes a negative ion
Answer: Option C
46. The main purpose of using transformer coupling in a class A amplifier is to make it more
A. efficient
B. less costly
C. less bulky
D. distortion free
Answer: Option D
Explanation:
47. The effective channel length of a MOSFET in saturation decreases with increase in
A. gate voltage
B. drain voltage
C. source voltage
D. body voltage
Answer: Option A
Explanation:
48. Which of the following element does not have three valence electrons?
A. Boron B. Aluminium
C. Gallium D. Phosphorus
Answer: Option D
Explanation:
49. Which of the following is used in the sterilization of water?
A. Hydrogen bromide
B. Oxygen
C. Ozone
D. Caustic potash
Answer: Option C
Explanation:
50. Electrons within a metal have energy levels from zero to Fermi level EF.
A. True B. False
Answer: Option A
Section13
1. A Darlington emitter follower circuit is some times used in the output stage of a TTL
gate in order to
A. increase its IQL
B. reduce its I0H
C. increase its speed of operation
D. reduce power dissipation
Answer: Option C
Explanation:
2. Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer
to the valence band and in n type semiconductor it lies nearer to the conduction band.
Reason (R): At room temperature, the p type semiconductor is rich in holes and n type
semiconductor is rich in electrons.
Answer: Option A
Explanation:
3. The drift velocity of electrons and holes is proportional to electric field strength.
A. True B. False
Answer: Option A
Explanation:
4. In an n channel MOSFET, the substrate is connected
A. to negative terminal of battery
B. to positive terminal of battery
C. to either positive or negative terminal of battery
Answer: Option A
Explanation:
5. Piezoelectric materials serves as a source of
A. microwaves
B. ultrasonic waves
C. musical waves
D. resonant waves
Answer: Option B
6. Which of the following is not a semiconductor?
A. Silicon
B. Calcium arsenide
C. Germanium
D. Zinc sulphide
Answer: Option B
Explanation:
7. At absolute temperature
A. the forbidden energy gap in germanium is higher than that in silicon
B. the forbidden energy gap in germanium and silicon are equal
C. the forbidden energy gap in silicon is higher than that in germanium
Answer: Option C
Explanation:
8. If E is electric field intensity, the current density due to field emission is proportional to
A. E B. E2
C. E2.5 D. E3/2
Answer: Option B
Explanation:
9. When a high voltage reference is required it is advantageous to use two or more zener diodes in
series to allow
A. higher voltage
B. higher dissipation
C. lower temperature coefficient
D. all of the above
Answer: Option D
Explanation:

10. Assertion (A): When p-n junction is forward biased, steady current flows.
Reason (R): When a p-n junction is forward biased, free electrons cross the junction
from n to p and holes from p to n.
Answer: Option A
11. Pentavalent impurity creates n type semiconductor.
A. True B. False
Answer: Option A
Explanation:
12. When a BJT is operated under saturated condition
C. CB junction is forward biased and EB junction is reverse biased
D. EB junction is forward biased and CB junction is reverse biased
Answer: Option A
Explanation:
13. Indium, aluminium, arsenic are all p type impurities.
A. True B. False
Answer: Option B
Explanation:
14. As the temperature of an intrinsic semiconductor material is increased
A. additional holes are created in the conduction band
B. protons get excited
C. protons acquire charge
D. energy of the atom is increased
Answer: Option D
Explanation:
15. Hall coefficient KH and charge density  are related as

A.
KH =
B. KH = 
C.
KH =
D. KH = ()1.2
Answer: Option A
16. When a diode is forward biased, the diode current is
A. high
B. low
C. zero
D. low or zero
Answer: Option A
Explanation:
17. In p type semiconductors the conduction due to holes ( = σp ) is (where e = charge on

hole, μp is hole mobility and p is hole concentration)
A.
B.
C. peμp
D.
Answer: Option C
Explanation:
18. At room temperature, the current in the, intrinsic semiconductor is due to
A. holes
B. electrons
C. ions
D. holes and electrons
Answer: Option D
Explanation:
19. Which of these is also called 'hot carrier diode'?
A. PIN diode
B. LED
C. Photo diode
D. Schottky diode
Answer: Option D
Explanation:
20. A d.c. power supply has an open circuit voltage of 100 V. When the full load current is
drawn, the output drops to 80 V. The percentage voltage regulation is
A. 97.25% B. 75%
C. 50% D. 25%
Answer: Option D
21. The dc output voltage from a power supply
increases with higher values of filter capacitance and decreases with more
A.
load current
decreases with higher values of filter capacitance and increases with more
B.
load current
decreases with higher values of filter capacitance as well as with more load
C.
current
increases with higher values of filter capacitance as well as with more load
D.
current
Answer: Option A
Explanation:
22. Avalanche beakdown is primarily dependent on the phenomenon of
A. doping B. collision
C. recombination D. ionization
Answer: Option B
Explanation:
23. In a JFET, the drain current is maximum when
A. VGS = VDS
B. VGS = pinch off voltage
C. VGS = 0
D. VGS is negative
Answer: Option C
Explanation:
24. The holes diffuse from P-region to the N-region in a P-N junction diode because
there is greater concentration of holes in the P-region as compared to N-
A.
region
there is greater concentration of holes in the N-region as compared to P-

B.
region
C. the free electrons in the N-region attract them
D. potential difference facilities such transfer
Answer: Option A
Explanation:
25. Surface leakage current is a part of
A. reverse current
B. forward current
C. reverse breakdown
D. forward breakdown
Answer: Option A
26. The forbidden energy gap in semiconductors
A. is always zero
B. lies just below the valence band
C. lies between the valence band and the conduction band
D. lies just above the conduction band

Answer: Option C
Explanation:
27. In commercial electron tubes the current produced by the cathode at 1000 K is about
A. 0.01 A per cm2 of cathode surface
B. 0.1 A per cm2 of cathode surface
C. 1 A per cm2 of cathode surface
D. 5 A per cm2 of cathode surface
Answer: Option B
Explanation:
28. In a conductor the conduction and valence bands overlap
A. True B. False
Answer: Option A
Explanation:

29. In which of the following device electrons will be the majority carriers?
A. P-type semiconductor
B. N-type semiconductor
C. N-P-N transistor
D. P-N-P transistor
Answer: Option D
Explanation:
30. An n channel JFET has IDS whose value is
A. maximum for VGS = 0 and minimum for VGS negative and large
B. minimum for VGS = 0 and maximum for VGS negative and large
C. maximum for VGS = 0 and minimum for VGS positive and large
D. minimum for VGS = 0 and maximum for VGS positive and large
Answer: Option A
31. How is an N-channel junction Field Effect Transistor operated as an amplifier?
A. With a forward bias gate source junction
B. With a reverse bias gate-source junction
C. With a open gate source junction
D. With a shorted gate source junction

Answer: Option B
Explanation:
32. The Ebers-moll equation for IE in CB configuration is given by
A. IE = nICIEC0
B. IE = IIC + IC0
C. IE = nIC + IC0(eqVEB/KT-1)
D. IE = IIC + IE0(eqVEB/KT - 1)
Answer: Option D
Explanation:
33. Ferrites are
A. hard materials
B. brittle materials
C. not easily machinable
D. materials with all above properties
Answer: Option D
Explanation:
34. The merging of a hole and an electron is called
A. recombination
B. covalent bonding
C. thermal union
Answer: Option A
Explanation:
35. Which of the following semiconductor has the highest melting point?
A. Germanium
B. Silicon
C. Gallium arsenide
D. Lead sulphide
Answer: Option D
36. The equivalent circuit of an ideal diode is
A. a charging condenser
B. a discharging condenser
C. a switch
D. a resistor
Answer: Option C
Explanation:
37. What is meant by "continuous collector current" in BJT?
A. Maximum collector current
B. Current at Quiescent condition
C. Leakage current
D. Junction Capacitance charging and discharging current
Answer: Option A
Explanation:
38. The small signal input impedance of a transistor whose output is shorted for the measuring signal
is
A.
B.
C.
D.
Answer: Option A
Explanation:
39. Assertion (A): The frequency of light used for photoelectric emission is high.
Reason (R): As per Einstein's equation 0.5 mv2 < hf - Uw.
Answer: Option A
Explanation:
40. The electric breakdown strength is affected by
A. shape of the waveform of applied voltage
B. steepness of the wavefront of the applied voltage
C. composition of the material

D. all of the above
Answer: Option D
41. Gel is
a polymer having side groups distributed randomly along a vinly polymer

A.
chain
B. a polymer having secondary chains branching from the main molecular chain
C. a solid frame work of colloidal particles linked together and containing a fluid
D. a polymer in which the repeating unit of each molecule has vinyl group
Answer: Option C
Explanation:
42. When a P-N junction is unbiased, the junction current at equilibrium is
A. zero as no charges cross the junction
B. zero as equal number of carriers cross the barrier
C. mainly due to diffusion of majority carriers
D. mainly due to diffusion of minority carriers
Answer: Option B
Explanation:
43. Dielectric strength of which of the following material has the highest dielectric strength?
A. Porcelain
B. Soft rubber
C. Glass
D. Joule effect
Answer: Option D
Explanation:
44. Assertion (A): In p type semiconductor conduction is mainly due to holes.
Reason (R): In p type material the holes are majority carriers.
Answer: Option A
Explanation:
45. In common base configuration, the input characteristics of bipolar junction transistor are
drawn between
A. VEB and IE
B. VCB and IC
C. IC and VCE
D. IE and VCE
Answer: Option A
46. Fermi level is the maximum energy that an electron can possess at 0 K.
A. True B. False
Answer: Option A
Explanation:
47. The voltage across the secondary of the transformer in a half wave rectifier (without any
filter circuit) is 25 volts. The maximum voltage on the reverse biased diode will be
A. 100 V
B. 50 V
C. 25 V
D. 12.5 V
Answer: Option C
Explanation:
48. The residual resistivity of a binary alloy at 0°K is
A. the sum of the residual resistivities of the component metals
B. the difference of the residual resistivities of the component metals
C. the product of the residual resistivities of the component metals
D. depend on the concentration of the minor component in the alloy
Answer: Option D
Explanation:
49. Which of the following insulating material is restricted to temperatures below 100°C?
A. Micanite B. Asbestos
C. Teflon D. Polythene

Answer: Option D
Explanation:
50. - ve feedback in an amplifier
A. reduces gain
B. increase frequency and phase distortion
C. reduce bandwidth
D. increase noise
Answer: Option A
Section14
1. The ratio of impurity atoms to intrinsic semiconductor atoms in an extrinsic

semiconductor is about.
A. 1 : 10
B. 1 : 1000
C. 1 : 100000
D. 1 : 108
Answer: Option D
Explanation:
2. To ensure that a zener diode does not get destroyed
A. the applied voltage should not exceed breakdown voltage
B. the current should not exceed rated current
C. the current should be less than magnitude of barrier potential
D. both (a) and (b)
Answer: Option B
Explanation:
3. SCR turns of from conducting state to blocking state on
A. reducing gate current
B. reversing gate voltage
C. reducing anode current below holding current value
D. applying ac to the gate
Answer: Option C
Explanation:
4. The kinetic energy of free electrons in a metal is (where k is the de-Broglie wave number
of the electron)
A. inversely proportional to k
B. inversely proportional to square of k
C. proportional to k
D. proportional to the square of k
Answer: Option B
Explanation:
5. The turn on time of an SCR is 5 micro second. Its trigger pulse should have
A. short rise time with pulse width = 2.5 μs
B. long rise time with pulse width = 3 μs
C. short rise time with pulse width = 4 μs
D. long rise time with pulse width = 4 μs
Answer: Option C
6. The cut in voltage
A. is the same for silicon and germanium diodes

B. is a forward voltage
C. is a reverse voltage
D. is a forward voltage below which the current is very small
Answer: Option D
Explanation:
7. With an ac input from 50 Hz power line, the ripple frequency is
A. 50 Hz in the dc output of half wave as well as full wave rectifier
B. 100 Hz in the dc output of half wave as well as full wave rectifier
C. 50 Hz in the dc output of half wave and 100 Hz in the dc output of full wave
D. 100 Hz in the dc output of half wave and 50 Hz in the dc output of full wave
Answer: Option C
Explanation:
8. For an insulating material, dielectric strength and dielectric loss should be respectively
A. high and high

B. low and high
C. high and low
D. low and low
Answer: Option C
Explanation:
9. Semiconductors have
A. aero temperature coefficient of resistance
B. positive temperature coefficient of resistance
C. negative temperature coefficient of resistance
Answer: Option C
Explanation:
10. The dipole moment per unit volume as a function of E in the case of an insulator is
given by (symbols have the usual meaning).
A. P = ε0E (εr - E)
B. P = ε0 E
C.
P=
D.
P=
Answer: Option A
11. The I/P impedance (Zi) and the O/P impedance (Zo) of an ideal trans conductance
(Voltage controlled current source) amplifier are
A. Zi = 0, Zo = 0
B. Zi = 0, Zo = ∞
C. Zi = ∞, Zo = 0
D. Zi = ∞, Zo = ∞
Answer: Option D
Explanation:
12. The relation between thermionic emission current and temperature is known as
A. Richardson Dushman equation
B. Langmuir child law
C. Ohm's law
D. Boltzmann's law
Answer: Option A
Explanation:
13. Assertion (A): When forward biased a p-n junction has low resistance.
Reason (R): The ratio is called dynamic resistance.
Answer: Option B
Explanation:
14. Assertion (A): JFET is a voltage controlled device.
Reason (R): The drain current can be controlled by controlling VGS.

Answer: Option A
Explanation:
15. For a P-N junction diode, the current in reverse bias may be
A. few amperes
B. between 0.5 A and 1 A
C. few milliamperes
D. few micro or nanoamperes
Answer: Option D
16. Greatest mobility can be expected in case of
A. holes
B. protons
C. electrons
D. negative ions

Answer: Option C
Explanation:
17. An enhancement mode MOSFET is off when the gate voltage is
A. zero
B. negative
C. less than threshold value
Answer: Option C
Explanation:
18. When atoms are held together by the sharing of valence electrons
A. each atom becomes free to move
B. neutrons start shifting
C. they form a covalent bond
D. some of the electrons are lost

Answer: Option C
Explanation:
19. Thermal runaway is not possible in FET, because as the temperature of FET increases.
A. the mobility decreases
B. the transconductance increases
C. impedance of the source
D. power dissipation in the chip
Answer: Option B
Explanation:
20. Which of the following pairs of semiconductors and current carriers is correctly matched?
A. Intrinsic : number of electrons = number of holes
B. P type : number of electrons > number of holes
C. N type : number of electrons < number of holes
D. Bulk : neither electrons nor holes
Answer: Option A
21. If E is energy level of electron and EF is Fermi level, then
A. all quantum states with E less than EF will be occupied at T = 0
B. all quantum states with E less than EF will be empty at T = 0
C. some quantum states with E less than EF will be occupied at T = 0
Answer: Option A
Explanation:
22. In the equation i = I0 (eV/ηVT - 1), VT =
A.
B.
C. T x 11600
D.
Answer: Option B
Explanation:
23. The range of life time carriers (electrons and holes) is

A. 1 μs to 100 μs
B. 1 nano sec to 1 μs
C. 1 nano sec to hundreds of μs
Answer: Option C
Explanation:
24. In the forward blocking region of a silicon, controlled rectifier, the SCR is
A. in the off-state
B. in the ON state
C. reverse biased
D. at the point of breakdown
Answer: Option A
Explanation:
25. Which of the following is a passive component?
A. Semiconductor devices
B. Vacuum tube devices

C. Capacitors
D. All of the above
Answer: Option C
26. From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur
at
A. higher value of drain current
B. saturation value of drain current
C. zero drain current
D. gate current equal to drain current
Answer: Option C
Explanation:
27. The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading
is
A. 0.1 mA
B.
C.
D.
Answer: Option D
Explanation:
A. transportation factor decreases and a increases
B. transportation factor increases and a increases
C. transportation factor increases and a decreases
D. transportation factor decreases and a decreases
Answer: Option D
Explanation:
29. The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be
concluded that
A. The diode is a silicon diode
B. The diode is a germanium diode
C. Break down voltage of the diode is 0.7 V
D. At 1 V rated current will pass through the diode
Answer: Option A
Explanation:
30. The process of deliberately adding impurity to a semi-conductor material is called
A. impurification B. pollution
C. deionisation D. doping
Answer: Option D
31. The electron and hole concentration in a intrinsic semiconductor are ni and Pirespectively when
doped with a P type material, these change to n and P, respectively. Then
A. n + P = ni + Pi
B. n + ni = P + Pi
C. nPi = niP
D. nP = ni Pi
Answer: Option D
Explanation:
32. The energy to cause thermionic emission is supplied by heating the cathode.
A. True B. False
Answer: Option A
Explanation:
33. Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are
accelerated towards the collector terminal.
Reason (R): Emitter base junction in BJT is forward biased.

Answer: Option B
Explanation:
34. Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if
the reverse voltage is less than critical value.
Reason (R): The total reverse current is sum of reverse saturation current and surface leakage
current.
Answer: Option B
Explanation:
35. The mass of an electron is nearly
A. 9.1 x 10-27 kg
B. 9.1 x 10-29 kg
C. 9.1 x 10-31 kg
D. 9.1 x 10-35 kg

Answer: Option D
36. Assertion (A): In a Schottky diode the reverse recovery time is almost zero.
Reason (R): A Schottky diode has aluminium silicon junction.
Answer: Option A
Explanation:
37. The drain characteristics of JFET are drawn between
A. VGS and VDS for different values of drain current
B. drain current and VGS for different values of VDS
C. drain current and VDS for different values of VGS
D. drain current and VGS for one value of VDS
Answer: Option C
Explanation:

38. Which of the following expressions may be used to correctly describe the temperature
(T) variation of the intrinsic carrier density (ni) of a semiconductor?
A. ni(T) = (A/T) exp (- E8/kT2)
B. ni(T) = A (- E8/2kT)10
C. ni(T) = A exp (- E8/2kT2)
D. ni(T) = AT3/2 exp (-E8/2kT)
Answer: Option D
Explanation:
39. Electrical contact materials used in switches, brushes and relays must possess
A. high thermal conductivity and high melting point
B. low thermal conductivity and low melting point
C. high thermal conductivity and low melting point
D. low thermal conductivity and high melting point
Answer: Option A
Explanation:

40. A JFET behaves as a constant current source when
A. VGS = 0
B. VGS is less than pinch off voltage
C. VGS = VDS
D. VGS is more than pinch off voltage
Answer: Option D
41. The effect of a finite gain of operational amplifier used in an integrator is that
A. it would not integrator
B. slope of the O/P will varied with time
C. final value of the O/P
D. there will be instability in the cirucuit
Answer: Option B
Explanation:
42. The ripple factor from a capacitor filter __________ as the load resistance __________
.
A. decreases, decreases
B. decreases, increases
C. increases, decreases
D. increases, increases
Answer: Option B
Explanation:
43. Of the various capacitances associated with a junction transistor the gain bandwidth
product is affected to maximum extend by
A. base collector parasitic capacitor
B. base collector space charge layer capacitance
C. base emitter space charge layer capacitance
D. base emitter diffusion capacitance
Answer: Option D
Explanation:
44. Choose proper substitutes for x and y to make the following statement correct.
Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.
A. x : Reverse, y : Reverse
B. x : Reverse, y : forward
C. x : Forward, y : Reverse
D. x : forward, y : forward
Answer: Option C
Explanation:
45. Assertion (A): When a zener diode breakdown, occurs the voltage across it is
constant.
Reason (R): The upper limit of zener current is determined by power handling
capacity.
Answer: Option B
46. Consider the following statements
1. An iron cored choke is a nonlinear device.

2. A carbon resistor kept in a sunlight is a time - invariant and passive device.
3. A dry cell is a time - varying and active device.
4. An air capacitor is a time - invariant and passive device
Of these statements
A. 1, 2, 3 and 4 are correct
B. 1, 2 and 3 are correct
C. 1, 2 and 4 are correct
Answer: Option A
Explanation:
47. If 10 V is the peak voltage across the secondary of the transformer in a half wave
rectifier (without any filter circuit), then the maximum voltage on the reverse biased
diode will be
A. 20 V
B. 14.14 V
C. 10 V
D. 7.8 V
Answer: Option C
Explanation:
48. In energy band diagram of p type semiconductor the acceptor energy level is
A. in valence band
B. in conduction band
C. slightly above valence band
D. slightly below conduction band
Answer: Option C
Explanation:
49. Given a power supply filter circuit, what measurements must be made of determine
percentage regulation
A. current through and voltage across the capacitor
B. d.c. load voltage and r.m.s. load voltage
C. current through load and voltage across load resistance
D. number of turns and gauge of secondary winding of transformer
Answer: Option B
Explanation:
50. When the gate terminal of MOSFET is positive, it is said to operate in
A. depletion mode
B. conduction mode
C. enhancement mode
Answer: Option C
Section 15
1. The product kT (where k is Boltzmann's constant and T is absolute temperature) at

room temperature is about
A. 0.051 eV
B. 0.026 eV
C. 0.01 eV
D. 0.001 eV
Answer: Option B
Explanation:
2. If E is energy level of electron and EF is fermi level, and T = 0 and E > EF, then
the probability of finding an occupied quantum state of energy higher than

A.
EF is zero
B. all quantum states with energies greater than EF are occupied
C. some quantum states with energies greater than EF are occupied

D. majority of quantum states with energies greater than EF are occupied
Answer: Option A
Explanation:
3. Which variety of copper has the best conductivity?
A. Pure annealed copper
B. Hard drawn copper
C. Induction hardened copper
D. Copper containing traces of silicon
Answer: Option A
Explanation:
4. The number of valence electrons in a silicon atom is
A. 4 B. 2
C. 1 D. 0
Answer: Option A
Explanation:
5. In a JFET VDS exceeds the rated value. Then it operates in
A. active region
B. ohmic region
C. cut off region
D. either cut off or active region
Answer: Option C
A. Diode rectifier
B. Schottky diode
C. Varistor
Answer: Option B
Explanation:

7. The output, V-I characteristics of an Enhancement type MOSFET has
an ohmic region at low voltage value followed by a saturation region at

C.
higher voltages
an ohmic region at large voltage values preceded by a saturation region at

D.
lower voltages
Answer: Option C
Explanation:
8. Piezoelectric quartz crystal resonators find application where
A. signal amplification is required
B. rectification of the signal is required
C. signal frequency control is required
D. modulation of signal is required
Answer: Option B
Explanation:

9. The forbidden energy gap between the valence band and conduction band will be least
in case of
A. metals
B. semiconductors
C. insulators
D. all of the above
Answer: Option A
Explanation:
10. If too large current passes through the diode
A. all electrons will leave
B. all holes will freeze
C. excessive heat may damage the diode
D. diode will emit light
Answer: Option C
11. Figure shows the terminals of a transistor in plastic package TO 18. Then
A. terminals 1, 2, 3 are emitter, collector, base respectively

B. terminals 1, 2, 3 are emitter, base, collector respectively
C. terminals 1, 2, 3 are base, emitter collector, respectively
D. terminals 1, 2, 3 are collector, emitter, base respectively
Answer: Option B
Explanation:
12. The network shown in the figure represents a
A. band pass filter
B. low pass filter
C. high pass filter
D. band stop filter
Answer: Option A
Explanation:
13. In a bipolar transistor, the emitter base junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or reverse bias
Answer: Option A
Explanation:
14. Which of these has semi-conductor metal junction?
A. PIN diode
B. Photo diode
C. Tunnel diode
D. Schottky diode
Answer: Option D
Explanation:
15. The ripple factor of power supply is a measure of
A. its filter efficiency
B. diode rating
C. its voltage regulation
D. purity of power output
Answer: Option D
16. Assertion (A): When light falls at junction of p-n photodiode, its p side
becomes positive and n side becomes negative.
Reason (R): When a photodiode is short circuited, the current in the

external circuit flows from p side to n side.
Answer: Option A
Explanation:
17. In what condition does BJT act like an open switch

A. cut off
B. saturation
C. active
D. both (b) and (c)
Answer: Option A
Explanation:
18. In a JFET
A. gate source cut off voltage is equal to VDS
B. gate source cut off voltage is equal to pinch off voltage
C. gate source cut off voltage is twice the pinch off voltage
gate source cut off voltage is equal to negative pinch off

D.
voltage
Answer: Option D
Explanation:
19. A power supply has full-load voltage of 20 V. What will be its no load
voltage when its voltage regulation is 100%
A. 0V
B. 10 V
C. 20 V
D. 40 V
Answer: Option D
Explanation:
20. For a photo conductor with equal electron and hole mobilities and
perfect ohmic contacts at the ends, an increase in the intensities of
optical illumination results in
A. change in open circuit voltage
B. change in short circuit current
C. a reduction resistance
D. an increase of resistance
Answer: Option C
21. Holes act like
A. positive charges
B. neutral atoms
C. negative charges
D. crystals

Answer: Option A
Explanation:
22. Assertion (A): Silicon is less sensitive to changes in temperature than germanium.
Reason (R): It is more difficult to produce minority carriers in silicon than in

germanium.
Answer: Option A
Explanation:
23. The number of protons in a silicon atom is
A. 32 B. 28
C. 14 D. 4
Answer: Option C
Explanation:
24. The emitter follower is widely used in electronic instrument because
A. its voltage gain is less than unity
B. its voltage gain is very high
C. its O/P Impedance is low and input impedance is high
D. its O/P Impedance is high and I/P impedance is low
Answer: Option C
Explanation:
25. A cascade amplifier stage is equivalent to
A. a common emitter stage followed by a common stage
B. a common base stage followed by an emitter follower
C. an emitter follower stage followed by a common base stage
D. a common base stage followed by a common emitter stage
Answer: Option A
26. An amplifier with resistive -ve feedback has two left poles in its open loop transfer function. The
amplifier
A. will always be unstable at high frequencies
B. will be stable for all frequencies
C. may be unstable, depending on the feedback factor
D. will oscillate at low frequencies
Answer: Option B
Explanation:
27. Amplification of ultrasonic waves is possible in a piezoelectric semiconductor under applied electric
field. The basic phenomenon involved is known as
A. electrostriction
B. acousto-optic interaction
C. acousto-electric interaction
D. stimulated Brillouin scattering
Answer: Option C
Explanation:
28. For a junction FET in the pinch off region, as the drain voltage is increased, the drain current
A. becomes zero
B. abruptly decrease
C. abruptly increases
D. remains constant
Answer: Option D
Explanation:
29. For a BJT, under the saturation region.
A. IC = βIB
B. IC > βIB
C. IC is independent of other parameter
D. IC < βIB
Answer: Option D
Explanation:
30. In which mode of BJT operation are both junctions reverse biased?
A. Active
B. Saturation
C. Cut off
D. Reverse active
Answer: Option C
31. In a junction transistor biased for operation at emitter current 'IE' and collector current
'IC' the transconductance 'gm' is.
A.
B.
C.
D.
Answer: Option B
Explanation:
32. Ferrities are particularly suited for high frequency applications because of their
A. low distortion
C. high conductivity
D. high mobility
Answer: Option B
Explanation:
33. In intrinsic semiconductor, the fermi level
A. lies at the centre of forbidden energy gap
B. is near the conduction band
C. is near the valence band
D. may be anywhere in the forbidden energy gap
Answer: Option A
Explanation:
34. Electromagnetic waves transport
A. energy only
B. momentum only
C. energy as well as momentum
D. neither energy nor momentum
Answer: Option C
Explanation:
35. In a forward biased p-n junction current enters p material as hole current and
leaves nmaterial as electron current of the same magnitude.
A. True B. False
Answer: Option A
36. When P-N junction is in forward bias, by increasing the battery voltage
A. current through P-N junction reduces
B. current through P-N junction increases
C. circuit resistance increases
Answer: Option B
Explanation:
37. A semiconductor in its purest form called
A. intrinsic semiconductor
B. extrinsic semiconductor
C. P-type semiconductor
D. N-type semiconductor
Answer: Option A
Explanation:
38. Which of the following is an active device?
A. Transformer
B. Silicon controlled rectifier
C. Electric bulb
D. Loudspeaker
Answer: Option B
Explanation:
39. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with
current.
Reason (R): The forward dynamic resistance of p-n diode varies with the operating
voltage.

Answer: Option B
Explanation:
40. If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will
be occupied is 0.5 for any temperature T.
A. True B. False
Answer: Option A
41. CE saturation resistance of n-p-n transistor is
A.
B.
C.
D.
Answer: Option B
Explanation:

42. In LED the radiation is in
A. visible region
B. infrared region
C. both (a) and (b)
D. neither (a) nor (b)
Answer: Option D
Explanation:
43. The rate of change of excess carrier density is proportional to carrier density.
A. True B. False
Answer: Option A
Explanation:
44. Tuned voltage amplifiers are not used
A. radio receivers
B. public address system
C. T.V. Receivers
D. band of freq. selected and amplified
Answer: Option B
Explanation:
45. The main reason why Ni-Zn ferrites are used for audio and T.V. transformers is that
A. they have large saturation magnetization
B. they are easy to fabricate by rolling
C. they are totally free from pores and voids
D. they have a high electrical resistivity
Answer: Option A
46. Assertion (A): Intrinsic semiconductor is an insulator at 0 K.
Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy
band.
Answer: Option A
Explanation:
47. Typical values of h parameters at about 1 mA collector current for small signal audio
amplifier in CE configuration are :
A. hie = 100 Ω, hre = 10-1, hfe = 50, hoe = 1 m mho
B. hie = 5 kΩ, hre = 10-4, hfe = 200, hoe = 20 m mho
C. hie = 5 kΩ, hre = 0, hfe = 50, hoe = 2 m mho
D. hie = 100 kΩ, hre = 10-2, hfe = 100, hoe = 10 m mho
Answer: Option B
Explanation:
48. A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
A. higher cut off frequency
B. higher voltage gain
C. higher current gain
D. lower current drain from the power supply, there by less dissipation
Answer: Option A
Explanation:
49.
Dynamic resistance of diode is
A. True B. False
Answer: Option A
Explanation:
50. The presence of some holes in an intrinsic semiconductor at room temperature is due to
A. valence electrons
B. doping
C. free electrons
D. thermal energy
Answer: Option D
Section 16
1. Voltage series feedback (Also called series-shunt feedback) results in
A. increase in both I/P and O/P impedances
B. decrease in both I/P and O/P impedances

C. increase in I/P impedance and decrease in O/P impedance
D. decrease in I/P impedance and increase in O/P impedance
Answer: Option C
Explanation:
2. How many free electrons does a p type semiconductor has?
A. only those produced by thermal energy
B. only those produced by doping
C. those produced by doping as well as thermal energy
D. any of the above
Answer: Option A
Explanation:
3. Which of the following has highest resistivity?
A. Mica
B. Paraffin wax
C. Air
D. Mineral oil
Answer: Option C
Explanation:
4. Assertion (A): In p-n-p transistor collector current is termed negative.
Reason (R): In p-n-p transistor holes are majority carriers.
Answer: Option B
Explanation:
5. The sensitivity of human eyes is maximum at
A. white portion of spectrum
B. green portion of spectrum
C. red portion of spectrum
D. violet portion of spectrum
Answer: Option B
6. In a bipolar transistor, the base collector junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or forward bias
Answer: Option B
Explanation:
7. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is
increased
A. the number of free electrons increases
B. the number of free electrons increases but the number of holes decreases
C. the number of free electrons and holes increase by the same amount
D. the number of free electrons and holes increase but not by the same amount
Answer: Option C
Explanation:
8. What is the necessary a.c. input power from the transformer secondary used in a half wave
rectifier to deliver 500 W of d.c. power to the load?
A. 1232 W
B. 848 W
C. 616 W
D. 308 W
Answer: Option A
Explanation:
9. In a semi-conductor diode, the barrier offers opposition to
A. holes in P-region only
B. free electrons in N-region only
C. majority carriers in both regions
D. majority as well as minority carriers in both regions
Answer: Option C
Explanation:
10. In a half wave rectifier, the load current flows
A. only for the positive half cycle of the input signal
B. only for the negative half cycle of the input signal

C. for full cycle
D. for less than fourth cycle
Answer: Option A
11. For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
Answer: Option B
Explanation:
12. Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
Answer: Option C
Explanation:
13. In monolithic ICs, all the components are fabricated by
A. diffusion process
B. oxidation
C. evaporation
D. none
Answer: Option A
Explanation:
14. Which one of the following is not a characteristic of a ferroelectric material?
A. High dielectric constant
B. No hysteresis
C. Ferroelectric characteristic only above the curie point
D. Electric dipole moment
Answer: Option C
Explanation:

15. In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical
wavelength for intrinsic excitation will be
A. 1.43 m
B. 1.43 mm
C. 1.73 mm
D. 1.73 x 1012 m
Answer: Option C
16. In the sale of diamonds the unit of weight is carat. One carat is equal to
A. 100 mg
B. 150 mg
C. 200 mg
D. 500 mg
Answer: Option C
Explanation:
17. R.M.S. value of the waveform shown will be

A. 3.53 V
B. 1V
C. 7.07 V
D. 8.56 V
Answer: Option C
Explanation:
18. The effect of current shunt feedback in an amplifier is to
A. increase the I/P resistance and decrease the O/P resistance
B. increase both I/P and O/P resistance
C. decrease both I/P and O/P resistance
D. decrease the I/P resistance and increase O/P resistance
Answer: Option D
Explanation:
19. Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is nearly constant.
Answer: Option A
Explanation:
20. Permalloy is
A. a variety of stainless steel
B. a polymer
C. a conon-ferrous alloy used in aircraft industry
D. a nickel an iron alloy having high permeability
Answer: Option D
21. Which of the following could be the maximum current rating of junction diode by 126?
A. 1A
B. 10 A
C. 20 A
D. 100 A
Answer: Option A
Explanation:
22. Each cell of a static Random Access memory contains
A. 6 MOS transistor
B. 4 MOS transistor, 2 capacitor
C. 2 MOS transistor, 4 capacitor
D. 1 MOS transistor and 1 capacitor
Answer: Option A
Explanation:
23. An electron in the conduction band

A. has higher energy than the electron in the valence band
B. has lower energy than the electron in the valence band
C. loses its charge easily
D. jumps to the top of the crystal
Answer: Option A
Explanation:
24. The magnetization 'm' of a superconductor in a field of H is
A. extremely small
B. -H
C. -1
D. Zero
25. The number of free electrons in acceptor atom is
A. 1 B. 2
C. 3 D. 4
Answer: Option C
31. For a UJT if
R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2, then the intrinsic stand off
ratio (η) is
A.
B.
C.
D.
Answer: Option D
Explanation:
32. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of
the electrons)
A.
∝
B.
∝
C. μk
D. μk2
Answer: Option B
Explanation:
33. Intrinsic concentration of charge carriers in a semiconductor varies as
A. T B. T2
C. T3 D. T-2
Answer: Option C
Explanation:
34. The dynamic resistance of a forward biased p-n diode
A. varies inversely with current
B. varies directly with current
C. is constant
D. is either constant or varies directly with current
Answer: Option A
Explanation:

35. A thermistor is a
A. thermocouple
B. thermometer
C. miniature resistance
D. heat sensitive explosive
Answer: Optio
36. When diodes are connected in series to increase voltage rating the peak inverse voltage
per junction
A. should not exceed half the breakdown voltage
B. should not exceed the breakdown voltage
C. should not exceed one third the breakdown voltage
D. may be equal to or less than breakdown voltage
Answer: Option C
Explanation:
37. Hall effect is observed in a specimen when it is carrying current and is placed in a
magnetic field. The resultant electric field inside the specimen is
A. normal to both current and magnetic field
B. in the direction of current
C. antiparallel to magnetic field

D. in arbitrary direction
Answer: Option A
Explanation:
38. In an ideal diode there is no breakdown, no __________ current, and no forward

__________ drop.
A. reverse, voltage
B. forward, current
C. forward, voltage
D. reverse, current
Answer: Option A
Explanation:
39. Silicon is not suitable for fabrication of light emitting diodes because it is
A. an indirect band gap semiconductor
B. direct band gap semiconductor
C. wideband gap semiconductor

D. narrowband gap semiconductor
Answer: Option A
Explanation:
40. MOSFET can be used as a
A. current controlled capacitor
B. voltage controlled capacitor
C. current controlled inductor
D. voltage controlled inductor
Answer: Option B
41. Power diodes are generally
A. silicon diodes
B. germanium diodes
C. either of the above
Answer: Option A
Explanation:

42. The inductance of a single layer solenoid of 10 turns is 5 μH. Which one of the following
is the correct value of inductance when the number of turns is 20 and the length is
doubled.
A. 10 μH
B. 20 μH
C. 40 μH
D. 5 μH
Answer: Option A
Explanation:
43. The depletion layer width of Junction
A. decreases with light doping
B. is independent of applied voltage
C. is increased under reverse bias
D. increases with heavy doping
Answer: Option C
Explanation:
44. Forbidden energy gap in germanium at 0 K is about
A. 10 eV
B. 5 eV
C. 2 eV
D. 0.78 eV
Answer: Option D
Explanation:
45. Light dependent resistors are
A. highly doped semiconductor
B. intrinsic semiconductor
C. lightly doped semiconductor
Answer: Option C
46. Fermi level is the amount of energy in which
A. a hole can have at room temperature

B. an electron can have at room temperature
C. must be given to an electron move to conduction band
Answer: Option C
Explanation:
47. When avalanche breakdown occurs covalent bonds are not affected.
A. True B. False
Answer: Option B
Explanation:
48. In p channel JFET, VGS is positive.
A. True B. False
Answer: Option A
Explanation:

49. Human body cannot sustain electric current beyond
A. 1 μA
B. 10 μA
C. 5 μA
D. 35 μA
Answer: Option D
Explanation:
50. To produce p type semiconductor we add
A. acceptor atoms
B. donor atoms
C. pentavalent impurity
D. trivalent impurity
Answer: Option D
51. The term efficacy, is defined by
A. same as efficiency
B. measure of the ability of a device to produce a desired effect

C. input/output
D. (efficiency)2
Answer: Option B
Explanation:
52. The addition of p type impurity to intrinsic material creates allowable energy levels.
A. slightly below conduction band
B. slightly above conduction band
C. slightly below valence band
D. slightly above valence band
Answer: Option D
Explanation:
53. An ideal Op-amp is an ideal
A. voltage controlled current source
B. voltage controlled voltage source

C. current controlled current source
D. current controlled voltage source
Answer: Option B
Explanation:
54. Free electrons exist in
A. first band
B. second band
C. third band
D. conduction band
Answer: Option D
Explanation:
55. Resistivity of copper is nearly
A. 1.56 μ ohm-cm
B. 3.95 μ ohm-cm
C. 14.55 μ ohm-cm
D. 22.05 μ ohm-cm
Answer: Option A
56. As compared to bipolar junction transistor, a FET
A. is less noisy
B. has better thermal stability
C. has higher input resistance
D. all of the above
Answer: Option D
Explanation:
57. For a P-N diode, the number of minority carriers crossing the junction depends on
A. forward bias voltage
B. potential barrier
C. rate of thermal generation of electron hole pairs
Answer: Option C
Explanation:
58. Ripple factor is
A.
B.
C.
D.
Answer: Option A
Explanation:
A. LED B. Varistor
C. SCR D. Diac
Answer: Option A

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1.

At room temperature the current in an intrinsic semiconductor is due to

D. holes and electrons

Answer & Explanation

Intrinsic material has equal number of holes and electrons.

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Answer & Explanation

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3. The most commonly used semiconductor material is

C. mixture of silicon and germanium

D. none of the above

Answer & Explanation

Germanium is rarely used.

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4. In which of these is reverse recovery time nearly zero?

Answer & Explanation

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Answer & Explanation

Current gain = 1 + β = 100.

A. IEp and IEn are almost equal

B. IEp >> IEn

C. IEn >> IEp

D. either (a) or (c)

Answer & Explanation

Emitter is p-type in p-n-p transistor.

Therefore holes are majority carriers.

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7. In an n channel JFET, the gate is

D. partially n & partially p

Answer & Explanation

Since channel is n type gate must be p type.

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8. The amount of photoelectric emission current depends on

B. intensity of incident radiation

C. both frequency and intensity of incident radiation

D. none of the above

Answer & Explanation

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9. Assertion (A): A p-n junction has high resistance in reverse direction.

A. Both A and R are true and R is correct explanation of A

B. Both A and R are true but R is not a correct explanation of A

C. A is true but R is false

D. A is false but R is true

Answer & Explanation

The increase in reverse resistance is due to widening of depletion layer.

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B. to limit the voltage and to protect LED against over current

D. none of the above.

Answer & Explanation

A. drive in diffusion of dopants and carriers

B. band to band transition dominants over impurity ionization

C. impurity ionization dominants over band to band transition

D. band to band transition is balanced by impurity ionization

Answer & Explanation

Covalent bonds are broken.

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B. towards negative terminal

C. either towards positive terminal or negative terminal

Answer & Explanation

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13. Ferrite have

A. low copper loss