Practice Exam Test Questions

Choose the letter of the best answer in each questions.

1. Which of the following is (are) diodes?

 A. Schottky
 B. Varactor
 C. Tunnel
 D. All of the above
2. Which of the following metals is (are) used in the fabrication of Schottky
diodes?

 A. Molybdenum
 B. Platinum
 C. Tungsten
 D. All of the above
3. What are the typical ranges of reverse-bias current levels IS for low-
power and high-power Schottky diodes at room temperature?

 A. Picoamperes, nanoamperes
 B. Nanoamperes, microamperes
 C. Microamperes, milliamperes
 D. Milliamperes, amperes
4. What is the voltage drop across Schottky diodes?

 A. 0 V to 0.2 V
 B. 0.7 V to 0.8 V
 C. 0.8 V to 1.0 V
 D. 1.0 V to 1.5 V
5. What metal(s) is(are) used in the construction of Schottky diodes?

 A. Molybdenum
 B. Platinum
 C. Tungsten
 D. Silicon
 E. Any of the above
6. For a 50-A unit, the PIV of the Schottky is about _____ compared to 150
V for the p-n junction variety.

 A. 25
 B 50
 C. 75
 D. 100
7. Schottky diodes are very effective at frequencies approaching _____.
 A. 20 GHz
 B. 10 MHz
 C. 100 MHz
 D. 1 MHz
8. This is an approximate equivalent circuit for the _____ diode.

 A. Schottky
 B. varicap
 C. tunnel
9. What is the range of the varying capacitor CT in varactor diodes?

 A. 0 pF to 5 pF
 B. 2 pF to 100 µF
 C. 2 µF to 100 µF
 D. 2 pF to 100 pF
10. Which of the following areas is (are) applications of varactor diodes?

 A. FM modulators
 B. Automatic-frequency control devices
 C. Adjustable bandpass filters
 D. All of the above
11. The tuning diode is a _____-dependent, variable _____.

 A. voltage, resistor
 B. current, capacitor
 C. voltage, capacitor
 D. current, inductor
12. This is an equivalent circuit for the _____ diode.

 A. Schottky
 B. varicap
 C. tunnel
13. The varicap diode has a transition capacitance sensitive to the applied
reverse-bias potential that is a maximum at zero volts and decreases _____
with increasing reverse-bias potentials.

 A. logarithmically
 B. parabolically
 C. exponentially
14. The majority of power diodes are constructed using _____.

 A. molybdenum
 B. platinum
 C. tungsten
 D. silicon
15. The current capability of power diodes can be increased by placing two
or more in series.

 A. True
 B. False
16. The PIV rating of power diodes can be increased by stacking the diodes
in series.

 A. True
 B. False
17. Which of the following diodes has a negative-resistance region?

 A. Schottky
 B. Varactor
 C. Tunnel
 D. Power
18. Which of the following semiconductor materials is (are) used in the
manufacturing of tunnel diodes?

 A. Germanium
 B. Gallium
 C. Both germanium and gallium arsenide
 D. Silicon
19. What is the ratio IP / IV for gallium arsenide?

 A. 1:1
 B. 5:1
 C. 10:1
 D. 20:1
20. What is the limit of peak current IP in tunnel diodes?
 A. A few microamperes to several hundred amperes
 B. A few microamperes to several amperes
 C. A few microamperes to several milliamperes
 D. A few microamperes to several hundred microamperes
21. What is the maximum peak voltage for tunnel diodes?

 A. 50 mV
 B. 100 mV
 C. 250 mV
 D. 600 mV
22. In which region is the operating point stable in tunnel diodes?

 A. Negative-resistance
 B. Positive-resistance
 C. Both negative- and positive-resistance
 D. Neither negative- nor positive-resistance
23. Which of the following diodes is limited to the reverse-bias region in its
region of operation?

 A. Schottky
 B. Tunnel
 C. Photodiode
 D. Rectifier
24. What is the response time of cadmium sulfide (CdS) in photoconductive
cells?

 A. 100 ms
 B. 50 ms
 C. 25 ms
 D. 10 ms
25. Which of the following areas is (are) an application of infrared-emitting
diodes?

 A. Intrusion alarms
 B. Shaft encoders
 C. Paper-tape readers
 D. All of the above
26. What is the maximum temperature limit for liquid-crystal displays
(LCDs)?

 A. 10ºC
 B. 30ºC
 C. 60ºC
 D. 100ºC
27. What is the response time of light-emitting diodes (LEDs)?
 A. Less than 100 ns
 B. 50 ms
 C. 100 ms to 300 ms
 D. 400 ms
28. What is the response time of LCDs?

 A. Less than 100 ns

 B. 50 ms
 C. 100 ms to 300 ms
 D. 400 ms
29. What is the power density received from the sun at sea level?

 A. 10 mW/cm2
 B. 100 mW/cm2
 C. 500 mW/cm2
 D. 1 W/cm2
30. Which of the following semiconductor materials is (are) used for
manufacturing solar cells?

 A. Gallium arsenide
 B. Indium arsenide
 C. Cadmium sulfide
 D. All of the above
31. What type of temperature coefficient do thermistors have?

 A. Positive
 B. Negative
 C. Either positive or negative
 D. None of the above
32. Which of the following materials is (are) used in the manufacturing of
thermistors?

 A. Ge
 B. Si
 C. A mixture of oxides of cobalt, nickel, strontium, or manganese
 D. All of the above
33. What is the resistance of thermistors at room temperature (20ºC)?

 A. 5 kΩ
 B. 1 kΩ
 C. 100 Ω
 D. 1 Ω
34. What is the resistance of thermistors at boiling temperature (100ºC)?

 A. 5 kΩ
 B. 1 kΩ
 C. 100 Ω
 D. 1 Ω
35. What is the typical level of change in resistance per degree change in
temperature?

 A. 1% to 2%
 B. 3% to 5%
 C. 7% to 10%
 D. 10% to 25%
FILL-IN-THE-BLANKS
1. Schottky diodes have _____.

 A. quick response time

 B. a lower noise figure
 C. both quick response time and a lower noise figure
 D. None of the above
2. Schottky diode construction results in a _____ uniform junction region
and a _____ level of ruggedness.

 A. more, high
 B. less, high
 C. more, low
 D. less, low
3. In both n-type and p-type silicon materials, the _____ is the majority
carrier in a Schottky diode.

 A. hole
 B. electron
 C. proton
 C. neutron
4. The barrier at the junction for a Schottky diode is _____ that of the p-n
junction device in both the forward- and reverse-bias regions.

 A. the same as
 B. more than
 C. less than
 D. None of the above
5. A Schottky diode has _____ level of current at the same applied bias
compared to that of the p-n junction at both the forward- and reverse-bias
regions.

 A. a lower
 B. a higher
 C. the same
 D. None of the above
6. The PIV of Schottky diodes is usually _____ that of a comparable p-n
junction unit.

 A. 1/2
 B. 1/3
 C. 1/4
 D. 1/5
7. Varactor diodes are _____.

 A. semiconductor devices
 B. voltage-dependent
 C. variable capacitors
 D. All of the above
8. In varactor diodes, as the reverse-bias potential increases, the width of
the depletion region _____, which in turn _____ the transition capacitance.

 A. increases, increases
 B. decreases, reduces
 C. increases, reduces
 D. decreases, increases
9. The normal range of reverse-bias voltage VR for varactor diodes is limited
to about _____.

 A. 15 V
 B. 20 V
 C. 25 V
 D. 40 V
10. In the reverse-bias region of varactor diodes, the resistance RR in
parallel with the varying capacitor is _____ and the series resistance RS is
_____.

 A. very large, very small

 B. very large, very large
 C. very small, very large
 D. very small, very small
11. The majority of power diodes are constructed using silicon because of its
higher _____ rating(s).

 A. current
 B. temperature
 C. PIV
 D. All of the above
12. The current capability of power diodes can be increased by placing two
or more of the diodes in _____, and the PIV rating can be increased by
stacking the diodes in _____.

 A. parallel, parallel
 B. series, parallel
 C. parallel, series
 D. series, series
13. In the negative-resistance region of tunnel diodes, as the terminal
voltage increases, the diode current _____.

 A. remains the same

 B. decreases
 C. increases
 D. is undefined
14. The p-n junction of a tunnel diode is doped at a level from _____ to
_____ times that of a typical semiconductor diode.

 A. one, several
 B. several, ten
 C. more than ten, several hundred
 D. one hundred, several thousand
15. The negative-resistance region of tunnel diodes can be used in the
design of _____.

 A. oscillators
 B. switching networks
 C. pulse generators
 D. All of the above
16. The wavelength is usually measured in _____.

 A. angstrom units
 B. micrometers
 C. both angstrom units and micrometers
 D. None of the above
17. In photodiodes, an increase in light intensity _____ the reverse current.

 A. increases
 B. decreases
 C. maintains
 D. None of the above
18. Ge has a _____ dark current and a _____ level of reverse current than
silicon.

 A. higher, lower
 B. higher, higher
 C. lower, higher
 D. lower, lower
19. The response time for cadmium selenide (CdSe) is _____.

 A. 100 ms
 B. 50 ms
 C. 25 ms
 D. 10 ms
20. A decrease in illumination _____ the resistance Rλ of a photoconductive
cell.

 A. decreases
 B. increases
 C. maintains
 D. None of the above
21. LCDs have _____ power requirement than (as) LEDs.

 A. a lower
 B. a higher
 C. the same
 D. None of the above
22. LCDs are characteristically _____ LEDs.

 A. the same speed as

 B. much slower than
 C. faster than
 D. much faster than
23. _____ is (are) the most widely used material(s) for solar cells.

 A. Selenium
 B. Silicon
 C. Both selenium and silicon
 D. Cadmium sulfide
24. In general, silicon _____.

 A. has a higher conversion efficiency

 B. has greater stability
 C. is less subject to fatigue
 D. All of the above
25. Typical levels of efficiency for solar cells range from _____ to _____.

 A. 10%, 40%
 B. 40%, 50%
 C. 50%, 75%
 D. 75%, 100%

Answer Key:
1. D. All of the above

2. D. All of the above

3. C. Microamperes, milliamperes

4. A. 0 V to 0.2 V

5. E. Any of the above

6. B 50

7. A. 20 GHz

8. A. Schottky

9. D. 2 pF to 100 pF

10. D. All of the above

11. C. voltage, capacitor

12. B. varicap

13. C. exponentially

14. D. silicon

15. B. False

16. A. True

17. C. Tunnel

18. C. Both germanium and gallium arsenide

19. D. 20:1

20. A. A few microamperes to several hundred amperes

21. D. 600 mV

22. B. Positive-resistance

23. C. Photodiode

24. A. 100 ms

25. D. All of the above

26. C. 60ºC

27. A. Less than 100 ns

28. C. 100 ms to 300 ms

29. B. 100 mW/cm2

30. D. All of the above

31. C. Either positive or negative

32. D. All of the above

33. A. 5 kΩ

34. C. 100 Ω

35. B. 3% to 5%

FILL-IN-THE-BLANKS
1. C. both quick response time and a lower noise figure

2. A. more, high

3. B. electron

4. C. less than

5. B. a higher

6. B. 1/3
7. D. All of the above

8. C. increases, reduces

9. B. 20 V

10. A. very large, very small

11. D. All of the above

12. C. parallel, series

13. B. decreases

14. D. one hundred, several thousand

15. D. All of the above

16. C. both angstrom units and micrometers

17. A. increases

18. B. higher, higher

19. D. 10 ms

20. B. increases

21. A. a lower

22. B. much slower than

23. C. Both selenium and silicon

24. D. All of the above

25. A. 10%, 40%