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Answer: a
Explanation: The collector current is analysed by the DC
analysis of a transistor. It involves the DC equivalent circuit
of a transistor. The base current is first found and the
collector current is obtained from the relation, IC=IBβ.
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b) VCC – RC(IC+IB)
c) VCC + RC(IC+IB)
d) VCC + RC(IC-IB)
View Answer
Answer: b
Explanation: The collector to emitter voltage is obtained in
order to find the operating point of a transistor. It is taken
when there is no signal applied to the transistor. The point
thus obtained lies in the cut off region when the transistor is
used as a switch.
Answer: d
Explanation: When in a transistor is driven into saturation,
we use VCE(SAT) as another linear parameter. In, addition
when a transistor is biased in saturation mode, we have IC
< βIB. This characteristic used to prove that the transistor is
indeed biased in saturation mode.
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d) of its dependence of β
View Answer
Answer: c
Explanation: The self destruction of a transistor due to
increase temperature is called thermal run away. It is
avoided by the negative feedback produced by the base
resistor in a collector to base bias. The IC which is
responsible for the damage is reduced by decreased output
signal.
Answer: d
Explanation: Before the feedback is applied, when the
temperature is increased, the reverse saturation increases.
The collector current also increases. When the feedback is
applied, the base current increases with decreasing
collector current and the thermal runway too.
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Answer: a
Explanation: When the stability factor S=1, the collector
resistor value should be very large when compared to the
base resistor. So, when RC is large we need to provide
large power supply which increases the cost. At the same
time, as the base resistor is small we need to provide small
power supply.
Answer: c
Explanation: The resistor RB can provide negative feedback
for both AC and DC signals. The negative feedback for DC
signal is done good as it can provide stable operating point.
On the other side, the negative feedback is badly done for
AC signal by decreasing the voltage gain.
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a) 5V
b) 3V
c) 8V
d) 6V
View Answer
Answer: d
Explanation: We know, IC=(VCC-VBE)/RB
By putting the values, we have IC=5.9mA. IE=IC/α. So,
IE=5.99mA.
VCE= VCC-RC(IC+IB). We have VCE=6V.
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a) (6.7V, 5.3mA)
b) (5.7V, 5.3mA)
c) (6.7V, 5mA)
d) (6V, 5mA)
View Answer
Answer; a
Explanation: We know, by KVL -12+(IC+IB)1K+6+VBE=0
We have IE=5.3. IC= αIE=5.24mA. From another loop,
-12+IEIK+VBE=0
We have, VCE=12-5.3m*1000=6.7V. Hence the Q point is
(6.7V, 5.3mA).
Answer: a
Explanation: The base current IB is zero when β value is
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sanfoundry.com
Answer: a
Explanation: The collector current is analysed by the DC
analysis of a transistor. It involves the DC equivalent circuit
of a transistor. The base current is first found and the
collector current is obtained from the relation, IC=IBβ.
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c) VCC + RCIC
d) VCC + RCIB
View Answer
Answer: b
Explanation: The collector to emitter voltage is obtained in
order to find the operating point of a transistor. It is taken
when there is no signal applied to the transistor. The point
thus obtained lies in the cut off region when the transistor is
used as a switch.
Answer: c
Explanation: The self destruction of a transistor due to
increase temperature is called thermal run away. It is
avoided by the negative feedback produced by the emitter
resistor in a self bias. The IC which is responsible for the
damage is reduced by decreased output signal.
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View Answer
Answer: d
Explanation: Before the feedback is applied, when the
temperature is increased, the reverse saturation increases.
The collector current also increases. When the feedback is
applied, the drop across the emitter resistor increases with
decreasing collector current and the thermal runway too.
a) VCCR2/R1+R2
b) VCCR1/R1+R2
c) VCCR2/R1-R2
d) VCCR2/R1-R2
View Answer
Answer: a
Explanation: The base current cannot be obtained directly
from the KVL or KCL applications. The VCC and VBE cannot
come under a single equation. So, the circuit is changed
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a) R1R2/R1+R2
b) R2/R1+R2
c) R1R2/R1-R2
d) R1/R1-R2
View Answer
Answer: a
Explanation: The base current cannot be obtained directly
from the KVL or KCL applications. A potential divider
network is formed by R1 and R2.The VCC and VBE cannot
come under a single equation. So, the circuit is changed
with a Thevenin’s resistance.
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c) 1 + RE/RTH
d) 1 – RE/RTH
View Answer
Answer: b
Explanation: The stability of the circuit is inversely
proportional to the stability factor. The emitter resistor is
very large when compared to the Thevenin’s resistance.
When β is not that large, then S=(1+ β)( RTH+ RE)/ (1+
β)RE+ RTH.
a) 0.5mA
b) 2mA
c) 1mA
d) 1.6mA
View Answer
Answer: c
Explanation: We know, IC=VTH-VBE/RE
=9*3/9=3V. IC=3-0.7/2.3=1mA.
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a) 10kΩ
b) 20kΩ
c) 30kΩ
d) 40kΩ
View Answer
Answer: d
Explanation: For silicon, VBE=0.8V, VCE=0.2V. IC=VTH-
VBE/RE. By pitting the values, we have VTH=1.3V. R2 can
be found from, VCCR2/R1+R2. We get R2=40KΩ.
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Answer: d
Explanation: For all practical purposes, αac=αdc=α and
practical values in commercial transistors range from
0.9-0.99. It is the measure of the quality of a transistor.
Higher is the value of α, better is the transistor in the sense
that collector current approaches the emitter current.
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Answer: b
Explanation: Usually, the negative feedback is used to
produce a stable operating point. But it reduces the voltage
gain of the circuit. This sometimes is intolerable and should
be avoided in some applications. So, the biasing techniques
are used.
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b) capacitors
c) resistors
d) transformers
View Answer
Answer: a
Explanation: Compensation techniques refer to the use of
temperature sensitive devices such as thermistors, diodes,
transistors, sensistors etc to compensate variation in
currents. Sometimes for excellent bias and thermal
stabilization, both stabilization and compensation
techniques are used.
Answer: c
Explanation: For germanium transistor, changes in ICO with
temperature contribute more serious problem than for
silicon transistor. On the other hand, in a silicon transistor,
the changes of VBE with temperature possesses
significantly to the changes in IC.
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c) resistors
d) transformers
View Answer
Answer: a
Explanation: A diode is used as the compensation element
used variation in VBE and ICO. The diode used is of the
same material and type as that of transistor. Hence, the
voltage across the diode has same temperature coefficient
as VBE of the transistor.
Answer: a
Explanation: In this method, diode is used for the
compensation in variation of ICO. The diode used is of the
same material and type as that of transistor. Hence, the
reverse saturation current IO of the diode will increase with
temperature at the same rate as the transistor collector
saturation current ICO.
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d) capacitor
View Answer
Answer: c
Explanation: The thermistor has a negative temperature
coefficient of resistance. It means, its resistance decreases
exponentially with increasing T. The thermistor RT is used
to minimize the increase in collector current.
Answer: d
Explanation: The sensistor has a positive temperature
coefficient of resistance. It is a temperature sensitive
resistor. It is a heavily doped semiconductor. When voltage
is decreased, the net forward emitter voltage decreases. As
a result the collector current decreases.
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Answer: b
Explanation: ro=ΔVCE/ΔIC
=3/0.3m=10kΩ.
Answer: a
Explanation: The ratio of change in collector base voltage
(ΔVCB) to resulting change in collector current (ΔIC) at
constant emitter current (IE) is defined as output resistance.
This is denoted by ro.
Answer: a
Explanation: When no signal is applied, the ratio of collector
current to emitter current is called dc alpha, αdc of a
transistor. αdc=-IC/IE. It is the measure of the quality of a
transistor. Higher is the value of α, better is the transistor in
the sense that collector current approaches the emitter
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current.
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Answer: a
Explanation: Thermal runaway is a self destruction process
in which an increase in temperature creates such a
condition which in turn increases the temperature again.
This uncontrolled rise in temperature causes the component
to get damaged.
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a) of its independence on β
b) of the positive feedback produced by the emitter resistor
c) of the negative feedback produced by the emitter resistor
d) of its dependence on β
View Answer
Answer: c
Explanation: The self destruction of a transistor due to
increase temperature is called thermal run away. It is
avoided by the negative feedback produced by the emitter
resistor in a self bias. The IC which is responsible for the
damage is reduced by decreased output signal.
Answer: d
Explanation: Before the feedback is applied, when the
temperature is increased, the reverse saturation increases.
The collector current also increases. When the feedback is
applied, the drop across the emitter resistor increases with
decreasing collector current and the thermal runway too.
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Answer: c
Explanation: The self destruction of a transistor due to
increase temperature is called thermal run away. It is
avoided by the negative feedback produced by the base
resistor in a collector to base bias. The IC which is
responsible for the damage is reduced by decreased output
signal.
Answer: d
Explanation: Before the feedback is applied, when the
temperature is increased, the reverse saturation increases.
The collector current also increases. When the feedback is
applied, the base current increases with decreasing
collector current and the thermal runway too.
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Answer: c
Explanation: The T1 transistor is having more power
dissipation as it is drawing 0.55A. When power dissipation
increases, the temperature increases and this leads to the
ultimate further increase in the current drawn by T1. The
current drawn by T2 will be reduced as the sum of currents
drawn by T1 and T2 should be constant.
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View Answer
Answer: b
Explanation: As the collector current is increased, the
emitter releases more number of electrons. This causes
more collisions of electrons at collector. This happens in a
cycle and produces such a condition in which temperature
is further more increased.
Answer: a
Explanation: The TJ is called as junction temperature which
varies and TA is called as the ambient temperature which is
fixed. The difference between these temperatures is directly
proportional to the power dissipation. Here, θ is called as
thermal resistance which is proportionality constant.
Answer: c
Explanation: The power dissipation is directly proportional
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Answer: c
Explanation: The collector current of a fixed bias transistor
is IC= β(VCC-VBE)/RB. When the temperature is increased,
the reverse saturation increases. The collector current also
increases. This in turn increases the current again which
leads to damage of transistor.
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Answer: a
Explanation: We know, TJ-TA=HPD
TJ=TA+HPD=27+8*3=51°C.
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b) TJ-TA=θ/pd
c) TJ-TA=θ+pd
d) TJ-TA=θ-pd
View Answer
Answer: a
Explanation: The TJ¬ is called as junction temperature
which varies and TA is called as the ambient temperature
which is fixed. The difference between these temperatures
is directly proportional to the power dissipation. Here, θ is
called as thermal resistance which is proportionality
constant.
Answer: b
Explanation: PD=(TJ-TA)/ HJ-C +HC-S +HS-A
=200-40/0.5+0.6+1.5=61.5W.
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a) 3.67A
b) 7.56A
c) 2.19A
d) 4.16A
View Answer
Answer: c
Explanation: PD =(TJ-TA)/ H
=200-25/20=8.75W.
Now, VCEIC = 8.75/4=2.19A.
Answer: d
Explanation: PD =(TJ-TA)/ H
=200-75/20=6.25W.
Now, IC = 6.25/4=1.56A.
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Answer: d
Explanation: HJ-C is thermal resistance between junction
and case and HC-A is thermal resistance between case and
ambient. The circuit designer has no control over HJ-C. So,
a proper approach to dissipate heat from case to ambient is
through heat sink.
Answer: b
Explanation: PC is the power dissipated at the collector
junction. TJ is junction temperature which varies. The
difference between these temperatures is directly
proportional to the power dissipation. Here, Q is called as
thermal resistance which is proportionality constant.
Answer: c
Explanation: As power transistors handle large currents,
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Answer: a
Explanation: Thermal runaway is a self destruction process
in which an increase in temperature creates such a
condition which in turn increases the temperature again.
This uncontrolled rise in temperature causes the component
to get damaged.
Answer: c
Explanation: The collector current of a fixed bias transistor
is IC= β(VCC-VBE)/RB. When the temperature is
increased, the reverse saturation increases. The collector
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