HGTP14N40F3VL / HGT1S14N40F3VLS

HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
General Description Applications
This N-Channel IGBT is a MOS gated, logic level device • Automotive Ignition Coil Driver Circuits
which is intended to be used as an ignition coil driver in au- • Coil-On Plug Applications
tomotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD pro- Features
tection for the logic level gate. Some specifications are • Logic Level Gate Drive
unique to this automotive application and are intended to • Internal Voltage Clamp
assure device survival in this harsh environment. • ESD Gate Protection
• Max TJ = 175oC
Formerly Developmental Type 49023
• SCIS Energy = 330mJ at TJ = 25oC

Package Symbol COLLECTOR

JEDEC TO-263AB JEDEC TO-220AB

D² -Pak E
C
G
R1
GATE
G

COLLECTOR COLLECTOR
(FLANGE) EMITTER
(FLANGE)

Device Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
BVCES Collector to Emitter Breakdown Voltage (IC = 1 mA) 420 V
BVCGR Collector to Gate Breakdown Voltage (RGE = 10KΩ) 420 V
ESCIS25 Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C 330 mJ
IC25 Collector Current Continuous, at TC = 25°C, VGE = 4.5V 38 A
IC90 Collector Current Continuous, at TC = 90°C, VGE = 4.5V 35 A
VGES Gate to Emitter Voltage Continuous ±10 V
VGEM Gate to Emitter Voltage Pulsed ±12 V
ICO L = 2.3mHy, TC = 25°C 17 A
ICO L = 2.3mHy, TC = 150°C 12 A
PD Power Dissipation Total TC = 25°C 262 W
Power Dissipation Derating TC > 25°C 1.75 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range -40 to 175 °C
TL Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 6 KV
 HGTP14N40F3VL / HGT1S14N40F3VLS
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
14N40FVL HGT1S14N40F3VLT TO-263AB 24mm 24mm 800 units
14N40FVL HGT1S14N40F3VLS TO-263AB Tube N/A 50 units
14N40FVL HGTP14N40F3VL TO-220AB Tube N/A 50 units

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BVCES Collector to Emitter Breakdown Voltage IC = 10mA, TC = 150°C 345 370 415 V
VGE = 0 TC = 25°C 350 375 420 V
TC = -40°C 355 380 425 V
BVCE(CL) Collector to Emitter Clamp Breakdown IC = 10A, TC = 150°C 350 385 430 V
Voltage RG = 0
BVECS Emitter to Collector Breakdown Voltage IC = 1mA TC = 25°C 24 - - V
BVGES Gate to Emitter Breakdown Voltage IGES = ±1mA ±12 - - V
ICES Collector to Emitter Leakage Current VCE = 250V, TC = 25°C - - 50 µA
TC = 150°C - - 250 µA
IGES Gate to Emitter Leakage Current VGE = ±10V TC = 25°C - - ±10 µA
R1 Series Gate Resistance - 1000 - Ω

On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, TC = 25°C - 1.3 2.0 V
VGE = 4.5V TC = 150°C - 1.4 2.3 V
VGE(TH) Gate to Emitter Threshold Voltage IC = 1mA, TC = 25°C 1.0 - 2.0 V
VCE = VGE TC = 150°C 0.5 - - V

Switching Characteristics
td(OFF)l + Current Turn-Off Time-Inductive Load IC = 6.5A, RG = 25Ω, - 12 16 µs
tf(OFF)l L = 550µHy, VCL = 320V,
VGE = 5V, TC = 25°C
SCIS Self Clamped Inductive Switching L = 2.3mHy, TC = 25°C 17 - - A
VGE = 5V, See TC = 150°C 12 - - A
Fig. 1 & 2

Thermal Characteristics
RθJC Thermal Resistance Junction to Case - - 0.57 °C/W
 HGTP14N40F3VL / HGT1S14N40F3VLS
Typical Performance Curves (Continued)
80 80
ISCIS, INDUCTIVE SWITCHING CURRENT (A)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

RG = 1kΩ, VGE = 5V, VDD = 14V RG = 1kΩ, VGE = 5V, VDD = 14V

60 60

40 40
TJ = 25°C

TJ = 150°C TJ = 25°C
20 20

TJ = 150°C

SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10

tCLP, TIME IN CLAMP (µS) L, INDUCTANCE (mHy)

Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
Current vs Time Current vs Inductance

1.25 1.45
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE = 6A ICE = 10A
VGE = 3.7V
1.20 1.40
VGE = 3.7V VGE = 4.0V
1.15 VGE = 4.0V 1.35
VGE = 4.5V
1.10 1.30
VGE = 5.0V
VGE = 8.0V
1.05 1.25
VGE = 4.5V
1.00 1.20 VGE = 8.0V
VGE = 5.0V

0.95 1.15

0.90 1.10
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Collector to Emitter On-State Voltage vs Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature Junction Temperature

40 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE = 8.0V VGE = 8.0V

VGE = 5.0V VGE = 5.0V
VGE = 4.5V VGE = 4.5V
30 30
VGE = 4.0V VGE = 4.0V
VGE = 3.7V VGE = 3.7V

20 20

10 10

TJ = - 40°C TJ = 25°C
0 0
0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter Current vs Collector Figure 6. Collector to Emitter Current vs

to Emitter On-State Voltage Collector to Emitter On-State Voltage
 HGTP14N40F3VL / HGT1S14N40F3VLS
Typical Performance Curves (Continued)
40 30
DUTY CYCLE < 0.5%, VCE = 5V

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE = 8.0V
PULSE DURATION = 250µs
VGE = 5.0V
25
VGE = 4.5V
30
VGE = 4.0V
20
VGE = 3.7V

20 15
TJ = 25°C
10
10 TJ = 175°C
5
TJ = 175°C TJ = -40°C

0 0
0 1.0 2.0 3.0 4.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)

Figure 7. Collector to Emitter Current vs Collector Figure 8. Transfer Characteristics

to Emitter On-State Voltage

40 2.2
VCE = VGE
VGE = 4.5V
ICE = 1mA
ICE, DC COLLECTOR CURRENT (A)

2.0
VTH, THRESHOLD VOLTAGE (V)

30

1.8

20 1.6

1.4
10

1.2

0 1.0
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175

TC CASE TEMPERATURE (°C) TJ JUNCTION TEMPERATURE (°C)

Figure 9. DC Collector Current vs Case Figure 10. Threshold Voltage vs Junction

Temperature Temperature

10000 14
ICE = 6.5A, VGE = 5V, RG = 1KΩ
ICES, LEAKAGE CURRENT (µA)

VECS = 24V
1000
toffL, SWITCHING TIME (µS)

12

100
VCES = 350V Inductive tOFF
10

10

VCES = 250V
8
1.0

6
0.1
25 50 75 100 125 150 175
-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Leakage Current vs Junction Figure 12. Switching Time vs Junction
Temperature Temperature
 HGTP14N40F3VL / HGT1S14N40F3VLS
Test Circuit and Waveforms
1500 8
FREQUENCY = 1 MHz IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C

VGE, GATE TO EMITTER VOLTAGE (V)

1250
6
C, CAPACITANCE (pF)

1000 CIES
VCE = 12V

750 4

500
CRES 2
VCE = 6V
250
COES

0 0
0 5 10 15 20 25 0 5 10 15 20 25 30

VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)

Figure 13. Capacitance vs Collector to Emitter Figure 14. Gate Charge

Voltage

380
ICER = 10mA
BVCER, BREAKDOWN VOLTAGE (V)

375

TJ = - 40°C

370

TJ = 25°C
365
TJ = 175°C

360

355
10 100 1000 5000 10000
RG, SERIES GATE RESISTANCE (kΩ)

Figure 15. Breakdown Voltage vs Series Gate Resistance

ZthJC, NORMALIZED THERMAL RESPONSE

100 0.5

0.2

0.1
10-1
0.05
t1
0.02
PD
0.01
10 -2 t2

SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC

10-3
10-5 10-4 10-3 10-2 10-1 100

T1, RECTANGULAR PULSE DURATION (s)

Figure 16. Normalized Transient Thermal Impedance

 HGTP14N40F3VL / HGT1S14N40F3VLS
L
VCE R
or LOAD
L
C
C

RG
PULSE RG +
DUT G
GEN DUT
G VCE
5V -
E

Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit

VCE BVCES / R

tP
VCE
L
IAS
C VDD
VARY tP TO OBTAIN
+
REQUIRED PEAK IAS RG
G VDD
VGE DUT -

E
tP
0V IAS 0
0.01Ω
tAV

Figure 19. Unclamped Energy Test Circuit Figure 20. Unclamped Energy Waveforms