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APPENDIX 1

19
Electronic charge, q 1.6 10 C

Room temperature, 27C  300K

kT
Thermal voltage, VT   25mV
q

Carrier velocity, u  E

Conductivity of material,

Current density,

Hole current in n-type semiconductor, 1

Electron current in p-type semiconductor, 1

Diode current, 1

T

Ripple voltage, Vr ( p p)  Vp Vp e RL C

Vp  
1 

Average Vout in rectifier-filter circuit, Vdc  Vp  1 e RLCf 

2  
 

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