GT15J321

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT15J321
High Power Switching Applications
Unit: mm
Fast Switching Applications

• Fourth-generation IGBT
• Fast switching (FS
• Enhancement mode type
• High speed: tf = 0.03 μs (typ.)
• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
• FRD included between emitter and collector

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 600 V

Gate-emitter voltage VGES ±20 V
DC IC 15
Collector current A
1 ms ICP 30

Emitter-collector forward DC IF 15 JEDEC ―

A
current 1 ms IFM 30 JEITA ―
Collector power dissipation TOSHIBA 2-10R1C
PC 30 W
(Tc = 25°C)
Junction temperature Tj 150 °C Weight: 1.7 g

Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Equivalent Circuit Marking

Collector

Gate
15J321 Part No. (or abbreviation code)
Emitter Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA

Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 1.5 mA, VCE = 5 V 3.5 ⎯ 6.5 V
Collector-emitter saturation voltage VCE (sat) IC = 15 A, VGE = 15 V ⎯ 1.90 2.45 V
Input capacitance Cies VCE = 20 V, VGE = 0, f = 1 MHz ⎯ 2300 ⎯ pF

Rise time tr
Inductive Load
⎯ 0.04 ⎯

Turn-on time ton VCC = 300 V, IC = 15 A ⎯ 0.17 ⎯

Switching time μs
Fall time tf VGG = 15 V, RG = 43 Ω ⎯ 0.03 0.15
(Note 1)
Turn-off time toff ⎯ 0.34 ⎯
Peak forward voltage VF IF = 15 A, VGE = 0 ⎯ ⎯ 2.0 V
Reverse recovery time trr IF = 15 A, di/dt = −100 A/μs ⎯ ⎯ 200 ns
Thermal resistance (IGBT) Rth (j-c) ⎯ ⎯ ⎯ 4.16 °C/W
Thermal resistance (Diode) Rth (j-c) ⎯ ⎯ ⎯ 4.63 °C/W

Note 1: Switching time measurement circuit and input/output waveforms

VGE
90%
10%
0
−VGE

L IC
IC VCC
90% 90%
RG
VCE VCE 10% 10% 10% 10%
0
td (off) td (on) tr
tf
toff ton

Note 2: Switching loss measurement waveforms

VGE
90%
10%
0

IC

VCE 5%
0

Eoff Eon

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IC – VCE VCE – VGE

50 20
Common emitter Common emitter
Tc = 25°C Tc = −40°C

VCE (V)
40 16
(A)
Collector current IC

20 15

Collector-emitter voltage
30 12 30
9

15
20 8

10 4 IC = 6 A

VGE = 7 V

0 0
0 1 2 3 4 5 0 4 8 12 16 20

Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V)

VCE – VGE VCE – VGE

20 20
Common emitter Common emitter
Tc = 25°C Tc = 125°C
VCE (V)
VCE (V)

16 16
Collector-emitter voltage
Collector-emitter voltage

12 30 12 30

15 15
8 8

4 IC = 6 A 4 IC = 6 A

0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

IC – VGE VCE (sat) – Tc

30 4
Common emitter
Common emitter
VCE = 5 V
Collector-emitter saturation voltage

25 VGE = 15 V 30 A
(A)

20
Collector current IC

VCE (sat) (V)

15 A
15 2

10 IC = 6 A
1
5 Tc = 125°C −40

25
0 0
0 4 8 12 16 20 −60 −20 20 60 100 140

Gate-emitter voltage VGE (V) Case temperature Tc (°C)

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Switching time ton, tr – RG Switching time ton, tr – IC

3 3
Common emitter Common emitter
VCC = 300 V VCC = 300 V
VGG = 15 V VGG = 15 V
1 1 RG = 43 Ω

(μs)
(μs)

IC = 15 A
: Tc = 25°C
: Tc = 25°C
0.5 0.5 : Tc = 125°C
: Tc = 125°C

Switching time ton, tr

Switching time ton, tr

0.3 0.3

ton
ton
0.1 0.1

0.05 0.05

0.03 tr 0.03

tr
0.01 0.01
1 3 10 30 100 300 1000 0 3 6 9 12 15

Gate resistance RG (Ω) Collector current IC (A)

Switching time toff, tf – RG Switching time toff, tf – IC

3 3
Common emitter
VCC = 300 V
VGG = 15 V
1 IC = 15 A 1
Switching time toff, tf (μs)

Switching time toff, tf (μs)

: Tc = 25°C
0.5 : Tc = 125°C 0.5 toff

0.3 0.3
toff tf

0.1 0.1
Common emitter
0.05 0.05 VCC = 300 V
0.03 0.03 VGG = 15 V
tf RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
0.01 0.01
1 3 10 30 100 300 1000 0 3 6 9 12 15

Gate resistance RG (Ω) Collector current IC (A)

Switching loss Eon, Eoff – RG Switching loss Eon, Eoff – IC

10 10
Common emitter Common emitter
VCC = 300 V 5 VCC = 300 V
5
VGG = 15 V 3 VGG = 15 V
Eon, Eoff (mJ)

Eon, Eoff (mJ)

3 RG = 43 Ω
IC = 15 A
: Tc = 25°C : Tc = 25°C
: Tc = 125°C 1 : Tc = 125°C
1 (Note 2) (Note 2)
0.5

0.5 Eon 0.3

Switching loss

Switching loss

0.3
0.1 Eoff
Eoff
Eon
0.05
0.1
0.03
0.05

0.03 0.01
1 3 10 30 100 300 1000 0 3 6 9 12 15

Gate resistance RG (Ω) Collector current IC (A)

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C – VCE VCE, VGE – QG

3000 500 20
Cies
Common emitter

VCE (V)
1000 RL = 20 Ω

VGE (V)
400 Tc = 25°C 16
(pF)

300

Collector-emitter voltage
300 12
Capacitance C

Gate-emitter voltage
100
300
200 8
30 Coes VCE = 100 V 200

Common emitter Cres

100 4
10 VGE = 0
f = 1 MHz
Tc = 25°C
3 0 0
1 3 10 30 100 300 1000 3000 0 20 40 60 80 100 120

Collector-emitter voltage VCE (V) Gate charge QG (nC)

IF − VF trr, Irr − IF
30 100 1000
Common collector Common collector
di/dt = −100 A/μs

trr (ns)
VGE = 0
Reverse recovery current Irr (A)

25 VGE = 0
: Tc = 25°C
(A)

30 300
: Tc = 125°C

Reverse recovery time

20
Forward current IF

15 10 trr 100

10 Tc = 125°C Irr
25
3 30
5 −40

0 1 10
0 0.4 0.8 1.2 1.6 2.0 0 3 6 9 12 15

Forward voltage VF (V) Forward current IF (A)

Safe operating area Reverse bias SOA

50 50
IC max (pulsed)*
30 30
IC max (continuous) 50 μs*
(A)
(A)

10 10
100 μs*
Collector current IC

5 1 ms* 5
Collector current IC

3 DC operation 3

10 ms*
1 1
*: Single
0.5 nonrepetitive pulse 0.5
Tc = 25°C Tj <
= 125°C
0.3 0.3
Curves must be derated VGE = 15 V
linearly with increase in RG = 43 Ω
temperature.
0.1 0.1
1 3 10 30 100 300 1000 1 3 10 30 100 300 1000

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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rth (t) – tw
2
10
Tc = 25°C

1
10
Transient thermal impedance

FRD
0
10
rth (t) (°C/W)

IGBT

−1
10

−2
10

−3
10

−4
10 −5 −4 −3 −2 −1 0 1 2
10 10 10 10 10 10 10 10

Pulse width tw (s)

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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