FDD4685 40V P-Channel PowerTrench® MOSFET

October 2006

FDD4685 tm

40V P-Channel PowerTrench® MOSFET

–40V, –32A, 27mΩ
Features General Description
„ Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A This P-Channel MOSFET has been produced using Fairchild
„ Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering
„ High performance trench technology for extremely low rDS(on) superior performance in application.
„ RoHS Compliant

Application
„ Inverter
„ Power Supplies

D G
G

S
D
TO-PA K
-2 52
(TO -252) D

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage –40 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous(Package Limited) TC= 25°C –32
-Continuous(Silicon Limited) TC= 25°C (Note 1) –40
ID A
-Continuous TA= 25°C (Note 1a) –8.4
-Pulsed –100
EAS Drain-Source Avalanche Energy (Note 3) 121 mJ
Power Dissipation TC= 25°C 69
PD W
Power Dissipation (Note 1a) 3
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 1.8
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDD4685 FDD4685 D-PAK(TO-252) 13’’ 12mm 2500 units

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD4685 Rev.B
 FDD4685 40V P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V –40 V
∆BVDSS Breakdown Voltage Temperature
ID = –250µA, referenced to 25°C –33 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –32V, VGS = 0V –1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA –1 –1.6 –3 V
∆VGS(th) Gate to Source Threshold Voltage
ID = –250µA, referenced to 25°C 4.9 mV/°C
∆TJ Temperature Coefficient
VGS = –10V, ID = –8.4A 23 27
rDS(on) Static Drain to Source On Resistance VGS = –4.5V, ID = –7A 30 35 mΩ
VGS = –10V, ID = –8.4A, TJ=125°C 33 42
gFS Forward Transconductance VDS = –5V, ID = –8.4A 23 S

Dynamic Characteristics
Ciss Input Capacitance 1790 2380 pF
VDS = –20V, VGS = 0V,
Coss Output Capacitance 260 345 pF
f = 1MHz
Crss Reverse Transfer Capacitance 140 205 pF
Rg Gate Resistance f = 1MHz 4 Ω

Switching Characteristics
td(on) Turn-On Delay Time 8 16 ns
VDD = –20V, ID = –8.4A
tr Rise Time 15 27 ns
VGS = –10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 34 55 ns
tf Fall Time 14 26 ns
Qg(TOT) Total Gate Charge VDD =–20V, ID = –8.4A 19 27 nC
Qgs Gate to Source Gate Charge VGS = –5V 5.6 nC
Qgd Gate to Drain “Miller” Charge 6.1 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –8.4A (Note 2) –0.85 –1.2 V
trr Reverse Recovery Time 30 45 ns
IF = –8.4A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 31 47 nC

Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V.

FDD4685 Rev.B 2 www.fairchildsemi.com

 FDD4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
100 3.0
PULSE DURATION = 80µs PULSE DURATION = 80µs

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5%MAX VGS = -3V DUTY CYCLE = 0.5%MAX
VGS = -6V 2.6
80 VGS = -10V
-ID, DRAIN CURRENT (A)

VGS = -4V
2.2

NORMALIZED
60 VGS = -4.5V VGS = -4.5V
1.8
VGS = -4V VGS = -6V
40
1.4

20 VGS = -10V
1.0
VGS = -3V
0 0.6
0 1 2 3 4 0 20 40 60 80 100
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.8
DRAIN TO SOURCE ON-RESISTANCE

ID =-8.4A 70
VGS = -10V ID = -8.4A PULSE DURATION = 80µs

SOURCE ON-RESISTANCE (mΩ)

1.6 DUTY CYCLE = 0.5%MAX
60
1.4
rDS(on), DRAIN TO
NORMALIZED

50
1.2 TJ = 125oC

1.0 40

0.8 30
TJ = 25oC
0.6
-50 -25 0 25 50 75 100 125 150 20
2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage

100 40
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs VGS = 0V

DUTY CYCLE = 0.5%MAX
80
-ID, DRAIN CURRENT (A)

10
TJ = 150oC
60

TJ = 25oC
40 TJ = 25oC 1

20 TJ = 150oC TJ = -55oC

TJ = -55oC
0 0.1
1 2 3 4 5 6 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDD4685 Rev.B 3 www.fairchildsemi.com

 FDD4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

10 10
4
-VGS, GATE TO SOURCE VOLTAGE(V)

VDD = -10V Ciss

8

CAPACITANCE (pF)
3
VDD = -20V 10
6 Coss
VDD = -30V

4
2
10 Crss
2 f = 1MHz
VGS = 0V

0 10
1
0 10 20 30 40 0.1 1 10 50
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

10 50
9
8
-IAS, AVALANCHE CURRENT(A)

-ID, DRAIN CURRENT (A)

6 40
VGS = -10V
5
4 TJ = 25oC 30

3
TJ = 125oC 20
2 Limited by Package
VGS = -4.5V
10
o
RθJC = 1.8 C/W
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

200 300
P(PK), PEAK TRANSIENT POWER (W)

100 250 FOR TEMPERATURES

ABOVE 25oC DERATE PEAK
-ID, DRAIN CURRENT (A)

VGS = -10V
200 CURRENT AS FOLLOWS:
100us
150 – T
I = I25 c
150 -----------------------
10 125

Tc = 25oC
1ms
100
1 10ms
OPERATION IN THIS SINGLE PULSE
AREA MAY BE TJ = MAX RATED DC SINGLE PULSE
LIMITED BY rDS(on) TC = 25OC
0.1 50
-3 -2 -1 0 1
1 10 100 10 10 10 10 10
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

FDD4685 Rev.B 4 www.fairchildsemi.com

 FDD4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJC

0.1
0.1 0.05
0.02 PDM
0.01

t1
0.01 t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC

1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

FDD4685 Rev.B 5 www.fairchildsemi.com

 FDD4685 40V P-Channel PowerTrench® MOSFET
TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™
ActiveArray™ GlobalOptoisolator™ OCXPro™ SMART START™ UltraFET®
Bottomless™ GTO™ OPTOLOGIC® SPM™ VCX™
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CoolFET™ I2C™ PACMAN™ SuperFET™
CROSSVOLT™ i-Lo™ POP™ SuperSOT™-3
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EcoSPARK™ IntelliMAX™ PowerEdge™ SuperSOT™-8
E2CMOS™ ISOPLANAR™ PowerSaver™ SyncFET™
EnSigna™ LittleFET™ PowerTrench® TCM™
FACT™ MICROCOUPLER™ QFET® TinyBoost™
FAST® MicroFET™ QS™ TinyBuck™
FASTr™ MicroPak™ QT Optoelectronics™ TinyPWM™
FPS™ MICROWIRE™ Quiet Series™ TinyPower™
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MSXPro™ RapidConnect™ TINYOPTO™
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OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component is any component of a life support device
(a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected
or sustain life, or (c) whose failure to perform when properly used to cause the failure of the life support device or system, or to
in accordance with instructions for use provided in the labeling, affect its safety or effectiveness.
can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I20

FDD4685 Rev. B 6 www.fairchildsemi.com