Recent Development in Flexible

Display System

Rakesh Kumar Patnaik

106035892
NEMS 5820
 Color filter Electrode TFT
• Intensity • Conductivity • Crystalline
• FWHM (sheet • Amorphous
• CIE resistance) • Organic
coordinates • Transparent • Withstand
• Withstand bending
bending
Highly conductive and flexible color
filter electrode using multilayer film
structure
 Outline
• Introduction
• Detail of the structure
• Optical analysis
• Bending analysis
• Sheet resistance analysis
• Sample preparation
• Simulation result
 Introduction
• Color filter is a type of band-pass filter
• Substrate: Organic dyes or pigments
• Low chemical stability
• Color degradation (UV and strong intensities)
• Electrode: indium tin oxide (ITO)
• Sheet resistance is dramatically changed after being bent
• Alternative flexible electrodes
• Metal nanowires
• Graphene
• Conductive polymers
 Cntd.

[4] DOI: 10.1038/NNANO.2013.84

 Proposed structure
• Multilayer film structure color filter
• Optical and electrical properties were negligibly changed after a bending test
• By varying the thicknesses of the layers RGB can be realized
• Fabrication technique: thermal evaporation and photolithography

silver (Ag)

tungsten trioxide (WO3)

polyethylene terephthalate (PET)

Comparison of two samples
Refractive index measurement
• The refractive indices of Ag
and WO3 were
experimentally measured
using an ellipsometer

• Ellipsometry is an optical
technique for investigating
the dielectric properties
Transmission characteristics
 Color chart

𝑃 = 𝑎 𝑔 − 𝐶 𝐸 − 𝑎 𝑔 − 𝐶 𝐸

CIE ∆= 0.02781 CIE ∆target= 0.1875

X CIE Y CIE X target Y target CPD

R 0.475 0.444 0.7347 0.2653 0.315242
G 0.35 0.375 0.2738 0.7174 0.350777
B 0.22 0.192 0.1666 0.0089 0.190728
CPD: 0.4 0.33 0.28 CIE ∆= 0.0043
 CFE bending

• Conductive and flexible CFE with a multilayer structure consisting of silver

and tungsten trioxide (WO3) on a polyethylene terephthalate (PET) substrate.
• When the CFE was forcibly bent, its optical properties were maintained.
 Dimension detail

The optimized layer thicknesses of RGB CFEs.

1st WO3 Bottom 2nd WO3 Top Ag 3rd WO3

(nm) Ag (nm) (nm) (nm) (nm)

Red 72 nm 20 nm 115 nm 10 nm 84 nm
Green 87 nm 20 nm 84 nm 10 nm 92 nm
Blue 100 nm 20 nm 46 nm 10 nm 100 nm
 Is various CFEs possible?
350
300
Dimensions in nm

250
3rd WO3
200
Top Ag
150 2nd WO3
100 Bottom Ag
50 1st WO3

0
 The sheet resistance measurement
system

RS1 and RS2 indicate the sheet resistance of the bottom and top Ag layer, and ρWO3, is the
resistivity of WO3. td is the thickness of WO3 and L is the length of the color filter.
L >> td −
− = +
1 1 𝑅 𝜌𝑊𝑂3 𝑡
𝑅 = + +
𝑅 𝑅 𝑅 𝐿
1+
𝑅
 Cntd.

• Two Ag layers were electrically connected even though the WO3 films covered
and physically disconnected the bottom Ag layer from the top Ag layer.
• It was confirmed from these results that the WO3 connects two Ag layers
electrically.
 Cntd.

• Ag and WO3 films, 70 mm by 70 mm size

deposited by thermal evaporation method, in
situ inside a thermal vacuum chamber on a PET
substrate.

• 4-probe: CFE p ovides .6 Ω/s . sheet

resistance.

RshCFE = 1.66 Ω/□

Rsh20nmAg = 1.99 Ω/□
Rsh10nmAg = 10.22 Ω/□
RshtotalAg = 1.62 Ω/□
RshITO(1µm) = 10 Ω/□
 Cntd.
• Sheet resistances were changed by
less tha Ω/s . afte , e di g
cycles. (10 mm bending test)
301 nm
• Better performance than an ITO
293 nm
electrode.
276 nm

Bending radius (20, 15, 10, or

5 mm) was converted to
strain
Electrical and optical characteristics
after acetone cleaning

1.62

Sheet resistances of red, green, Transmittances of red, green, and

and blue CFE after acetone blue CFEs before and after 30 min
cleaning with different acetone acetone cleaning
cleaning time.
 Device Patterning

Negative photoresist (NR9-3000PY, FUTURREX INC.) spin-coated, 2000 RPM/ 2s

Post Soft-baked at 150
for°C40s
for 3 minutes inside an
maintained 5s,baked, developed
4000 RPM/5s andand stripped
maintained for
deposition oven
Exposed to ultraviolet light (UV) with a 360 mJ/cm2 exposure dose
 Device Fabrication

Thermal evaporation
Glass 700 μm Vacuum Pressure 7 μTorr

PET 125 μm

WO3 Ag WO3 Ag WO3

Openfilters result
Openfilters result
 Openfilters result

Ag-W-Ag

W-Ag-W-Ag

Ag-W-Ag-W
Openfilters result
Enhancement of the electrical properties
of silver nanowire transparent
conductive electrodes by atomic layer
deposition coating with zinc oxide
 Outline
• Introduction
• Optical analysis
• Sheet resistance analysis
• XPS test
 Introduction
• Commonly used TCOs: ITO FTO AZO CdO
• Fabrication method: sputtering or thermal
evapo atio …..high cost
• Flexible substrates, cracks in the film
commonly happen
• Brittle property, rare and expensive
• Required: sheet resistance below 10 Ω/sq. and
transmittance 80% (or higher)
• Trade off between sheet resistance and
transmittance
• AgNWs are preferred over ITO
 AgNW significance
• AgNW network on flexible substrate at room
temperature
• Wire resistance and Junction resistance (1 GΩ)
• Prevents carrier flow
• Nano particle and nanowire
• AgNWs and PEO mixture on PET substrate (drawn
down rod technology)

[6] ACS, VOL. 8 ’ NO. 10 ’ 10980–10987 ’ 2014

[5] dx.doi.org/10.1021/la300720y

Varying diameter
T% and Rsh decreases
 ZnO coated AgNW
• Two AgNWs Ju tio esista e is ve high, g eate tha GΩ,
[7] VOL. 4 ▪ NO. 5 ▪ 2955–2963 ▪ 2010 AgNW
Avg. dia. 120–150
• Reduction of sheet resistance: increase in contact area nm and length 10s
of mm.

• Effect of coating ZnO onto the surface of AgNWs

AgNW on Glass
Doctor-blade method

Four-probe system
scanning electron
microscopy (SEM)
ZnO coated AgNW
Spectrometer
Atomic layer deposition (ALD)
 ALD cycles
100 cycles 200 cycles

300 cycles 400 cycles 500 cycles

Coating of ZnO create an increase in the contact area at the junction causing a reduction
of sheet resistance of the AgNW network.
Transmission analysis

No. of cycle increases

ZnO coating thickness

Transmittance decreases
 Sheet resistance analysis
𝐴𝑔 𝑊 − − 𝐴𝑔 𝑊
= 𝐴𝑔 𝑊
X100%
𝐴𝑔 𝑊 − − 𝐴𝑔 𝑊
= 𝐴𝑔 𝑊
X100%

Why? AgNW-ZnO-AgNW

Why? Next slide

 Effect on resistance

LOW

LOW LOW
H L H
I I L H L
G O G I
O O
H W H G
W H W
LOW LOW
XPS test, confirm bonding and FOM

Φ =𝑇 𝑅

Higher FOM indicates a better-quality film

(proposed by Haacke)
The effect of mechanical strain on contact
esista e i fle i le p i ted o ga i thi -
fil t a sisto s
 Outline
• Introduction
• Schematic illustration of OTFT
• Transfer characteristics
• Effect on contact resistance
 Introduction
• Flexibility is the primary advantage of organic electronics.

• Thin and flexible substrate: PET, PEN pentacene vs. PBTTT-C16-based

OTFT devices. [8]
• Advantage of printing technology

• OTFT devices are sensitive to tensile strain

• Behavior of printed layer is different than deposited (evaporation) layer
• Polymeric semiconductor were more stable than small-molecule OTFT devices
• Short channel lengths were more sensitive to strain
 Schematic illustration of OTFT

PBTTT-C16 (polymeric) and diF-TESADT (small molecule)

Transfer characteristics of OTFT
 Channel width-normalized channel
resistance as function of channel length
Width-normalized contact resistance
(Rc) as a function of VGS
Surface morphologies
AFM topography and Surface three-
dimensional AFM images

PBTTT-C16 OTFTs

diF-TESADT OTFTs
 Conclusion
• High performance flexible component that serves as an electrode and a color filter
simultaneously is fabricated by a thermal evaporation method.

• The electrical and optical properties of the proposed CFE were maintained after a
bending test, thus confirming its flexibility

• The sheet resistance of the AgNW electrodes decreased strongly after being
coated with ZnO due to the improvement of the contact resistance between the
silver nanowires after coating with ZnO but transmittance reduces.

• The small-molecule-based semiconducting layer in the OTFT devices contributed

only to increases in the contact resistance after applied strain.

• Polymers with low crystallinity (nearly amorphous) were more stable under
mechanical stress than small-molecule OTFT devices with high crystallinity.
 References
1. Jun Hee Han, Dong-Young Kim, Dohong Kim & Kyung Cheol Choi, Highly
conductive and flexible color filter electrode using multilayer film Stru ture ,
Scientific Reports | 6:29341 | DOI: 10.1038/srep29341,2016.
2. Anh-Tuan Pham1, Xuan-Quang Nguyen1, Duc-Huy Tran2, Vu Ngoc Phan1, Thanh-
Tung Duong and Duy-Cuong Nguyen1, Enhancement of the electrical properties
of silver nanowire transparent conductive electrodes by atomic layer deposition
coating with zinc oxide , Nanotechnology 27 (2016) 335202, IOP.
3. Tomohito Sekine1, Kenjiro Fukuda1,2,3, Daisuke Kumaki1 and Shizuo Tokito1, The
effect of mechanical strain on contact resistance in flexible printed organic thin-
film transistors , Flex. Print. Electron 1 (2016) 035005, IOP.
4. Hui Wu 1,2 , Desheng Kong 1 , Zhichao Ruan3, Po-Chun Hsu 1, Shuang Wang 3,
Zongfu Yu 3, Thomas J. Carney1, Liangbing Hu1, Shanhui Fan3 and Yi Cui 1,4*, A
transparent electrode based on a metalnanotrough network , NATURE
NANOTECHNOLOGY DOI: 10.1038/NNANO.2013.84
 References
5. Mingjun Hu, Jiefeng Gao, Yucheng Dong, Kai Li, Guangcun Shan, Shiliu Yang, and
Robert Kwok-Yiu Li*, Flexible Transparent PES/Silver Nanowires/PET Sandwich-
Structured Film for High-Efficiency Electromagnetic Interference Shielding , ACS,
dx.doi.org/10.1021/la300720y | Langmuir 2012, 28, 7101−7106.
6. Haifei Lu, Di Zhang, Xingang Ren, Jian Liu, and Wallace C. H. Choy*, Selective
Growth and Integration of Silver Nanoparticles on Silver Nanowires at Room
Conditions for Transparent Nano-Network Electrode , ACS, VOL. 8 ’ NO. 10 ’
10980–10987 ’ 2014.
7. Liangbing Hu, ,§ Han Sun Kim, ,§ Jung-Yong Lee, Peter Peumans, and Yi Cui ,* ,
Scalable Coating and Properties of Transparent,Flexible,SilverNanowire
Electrodes , VOL. 4 ▪ NO. 5 ▪ 2955–2963 ▪ 2010 ACS NANO.
8. Tomohito Sekine*, Kenjiro Fukuda, Daisuke Kumaki, and Shizuo Tokito*, Highly
stable flexi le printed organic thin-film transistor devices under high strain
conditions using semiconducting polymers , Japanese Journal of Applied Physics
54, 04DK10 (2015)
Thank You