ON Semiconductor

JFET VHF/UHF Amplifiers BF245A

N–Channel — Depletion BF245B

MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDS ±30 Vdc
Drain–Gate Voltage VDG 30 Vdc
1
Gate–Source Voltage VGS 30 Vdc 2
3
Drain Current ID 100 mAdc BF244A, BF244B
CASE 29–11, STYLE 22
Forward Gate Current IG(f) 10 mAdc TO–92 (TO–226AA)
Total Device Dissipation @ TA = 25°C PD 350 mW
Derate above 25°C 2.8 mW/°C
Storage Channel Temperature Range Tstg –65 to +150 °C

3 DRAIN 3 DRAIN
1
2
3
2 1 BF245, BF245A,
GATE GATE BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
STYLE 22 STYLE 23
1 SOURCE 2 SOURCE

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Gate–Source Breakdown Voltage V(BR)GSS 30 — — Vdc
(IG = 1.0 µAdc, VDS = 0)
Gate–Source VGS Vdc
(VDS = 15 Vdc, ID = 200 µAdc) BF245(1) 0.4 — 7.5
BF245A, BF244A(2) 0.4 — 2.2
BF245B, BF244B 1.6 — 3.8
BF245C 3.2 — 7.5
Gate–Source Cutoff Voltage VGS(off) –
0.5 — –
8.0 Vdc
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Reverse Current IGSS — — 5.0 nAdc
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current IDSS mAdc
(VDS = 15 Vdc, VGS = 0) BF245(1) 2.0 — 25
BF245A, BF244A(2) 2.0 — 6.5
BF245B, BF244B 6.0 — 15
BF245C 12 — 25
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

June, 2001 – Rev. 0 BF245A/D

This datasheet has been downloaded from http://www.digchip.com at this page

 BF245A BF245B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 — 6.5 mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos — 40 —
mhos
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs — 5.6 — mmhos
Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs — 1.0 — mmhos
Input Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc) Ciss — 3.0 — pF
Reverse Transfer Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Crss — 0.7 — pF
Output Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Coss — 0.9 — pF
Cut–off Frequency(3) (VDS = 15 Vdc, VGS = 0) F(Yfs) — 700 — MHz
3. The frequency at which gfs is 0.7 of its value at 1 kHz.

COMMON SOURCE CHARACTERISTICS

ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)

30 5.0
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
20 3.0
bis, INPUT SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)

2.0
10 bis @ IDSS
brs @ IDSS
7.0 1.0
5.0
0.7
0.25 IDSS
3.0 gis @ IDSS 0.5
2.0 0.3
gis @ 0.25 IDSS
0.2
1.0
0.7
0.1
0.5 grs @ IDSS, 0.25 IDSS
bis @ 0.25 IDSS 0.07
0.3 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)

20 10
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)

5.0
bos, OUTPUT SUSCEPTANCE (mhos)
gos, OUTPUT ADMITTANCE (mhos)

10
7.0 gfs @ IDSS 2.0 bos @ IDSS and 0.25 IDSS
5.0
1.0
3.0 gfs @ 0.25 IDSS
0.5
2.0
0.2 gos @ IDSS
1.0 |bfs| @ IDSS 0.1
0.7
0.5 0.05
|bfs| @ 0.25 IDSS
gos @ 0.25 IDSS
0.3 0.02
0.2 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 7001000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)

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 BF245A BF245B

COMMON SOURCE CHARACTERISTICS

S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 ID = 0.25 IDSS
40° 1.0 320° 40° 0.4 32
100 200
200 300
0.9 0.3
50° 400 310° 50° ID = IDSS, 0.25 IDSS 31
300 900
0.8 500 800 0.2
ID = IDSS
60° 400 300° 60° 30
700
600 600

70° 0.7 500 290° 70° 500 0.1 29

700 400
600
80° 280° 80° 300 28
0.6 700 800 0.0
800 200
90° 900 270° 90° 27
900 100

100° 260° 100° 26

110° 250° 110° 25

120° 240° 120° 24

130° 230° 130° 23

140° 220° 140° 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 5. S11s Figure 6. S12s

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 200
300 ID = 0.25 IDSS
40° 320° 40° 1.0 32
100 200 400
500
300 600
400
0.6 0.9 500 700
50° 310° 50° 600 800 31
ID = IDSS 700
800 900
0.5 0.8 900
60° 300° 60° 30

900 0.4 0.7

70° 290° 70° 29
800
900
80° 700 800 280° 80° 28
0.3 0.6
700 ID = 0.25 IDSS
90° 600 270° 90° 27
600
500 500 0.3
100° 260° 100° 26
400 100
400
110° 300 200 250° 110° 25
0.4
300
120° 240° 120° 24
ID = IDSS 200 0.5
100

130° 230° 130° 23

0.6

140° 220° 140° 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 7. S21s Figure 8. S22s

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 BF245A BF245B

COMMON GATE CHARACTERISTICS

ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)

20 0.5

grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)
0.3
big, INPUT SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)

10
0.2 brg @ IDSS
7.0 gig @ IDSS
5.0
0.1
3.0 grg @ 0.25 IDSS 0.07
2.0 0.05
0.03 0.25 IDSS
1.0
0.02
0.7
0.5 big @ IDSS
big @ 0.25 IDSS 0.01 gig @ IDSS, 0.25 IDSS
0.3 0.007
0.2 0.005
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)

10 1.0
gfg @ IDSS
bfg , FORWARD SUSCEPTANCE (mmhos)

7.0 0.7 bog @ IDSS, 0.25 IDSS

bog, OUTPUT SUSCEPTANCE (mmhos)
gog, OUTPUT ADMITTANCE (mmhos)

5.0 0.5
3.0 gfg @ 0.25 IDSS 0.3
2.0 0.2

1.0 0.1
0.7 0.07
0.5 0.05 gog @ IDSS
bfg @ IDSS
0.3 0.03
0.2 brg @ 0.25 IDSS 0.02
gog @ 0.25 IDSS
0.1 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog)

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 BF245A BF245B

COMMON GATE CHARACTERISTICS

S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°

40° 0.7 320° 40° 0.04 32

ID = 0.25 IDSS
100 200
300
0.6 400 0.03
50° 100 500 310° 50° 31
200
300 600
0.5 0.02
400 700
60° 300° 60° 30
500
ID = IDSS 800
0.4 600 0.01
70° 290° 70° 29
900
700
80° 280° 80° 28
0.3 800 0.0
100
90° 900 270° 90° 27
500
600
100° 260° 100° 600 ID = 0.25 IDSS 26
ID = IDSS
110° 250° 110° 700 25
700 0.01
800
120° 240° 120° 800 24
0.02
900
130° 230° 130° 23
900 0.03

140° 220° 140° 0.04 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 13. S11g Figure 14. S12g

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
1.5 300
40° 0.5 320° 40° 1.0 500 32
200
400 700
100 600
100
0.4 0.9 800 900
50° ID = IDSS 310° 50° 31
100 ID = IDSS, 0.25 IDSS

0.3 0.8
60° 300° 60° 30

0.2 0.7
70° ID = 0.25 IDSS 290° 70° 29

80° 280° 80° 28

0.1 0.6
900
90° 270° 90° 27
900
100° 260° 100° 26

110° 250° 110° 25

120° 240° 120° 24

130° 230° 130° 23

140° 220° 140° 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 15. S21g Figure 16. S22g

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 BF245A BF245B

PACKAGE DIMENSIONS

TO–92 (TO–226)
CASE 29–11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X–X
1 R 0.115 --- 2.93 ---
N V 0.135 --- 3.43 ---
N

STYLE 22: STYLE 23:

PIN 1. SOURCE PIN 1. GATE
2. GATE 2. SOURCE
3. DRAIN 3. DRAIN

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 BF245A BF245B

Notes

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 BF245A BF245B

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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