EC/EE/EI-213 Hall Ticket Number: II/V B.Tech (Supply) DEGREE EXAMINATION JULY, 2015 First Semester ELECTRONIC DEVICES (Common to ECE/EEE/EIE) Time: Three Hours Maximum : 60 Marks Answer Question No.1 compulsorily. (1X12 = 12 Marks) Answer ONE question from each unit, (4X12=48 Marks) 1.Answer all questions (12X1=12 Marks) a) Define drift. b) What is law of mass action? ©) What is the purpose of filter in a rectifier circuit? d) Draw the Bridge rectifier circuit. ©) What is space-charge? £) Why issilicon semiconductor preferred? g) What is dark current? h) What is Peak Inverse Voltage? i) Draw the equivalent circuit of a tunnel diode. i) What is biasing? k) What is channel length modulation in MOSFET? 1) What is a phototransisitor? UNIT-1I 2.) Describe the energy band structure of insulators,semiconductors and conductors. (OM) b) Derive the continuity equation from the first principles. (6M) (OR) 3.a) What is the distinction between an intrinsic and an extrinsic semiconductor? How is the potential varied in Graded Semi-conductor? (OM) b) Explain Hall Effect and derive the expression for hall coefficient and mention some applications. a (6M) UNIT-11 4. a) Derive the expression for diffusion capacitance of a PN diode. (6M) b) Show that the PN junction diode works as a rectifier. Find Ripple factor and Transformer Utility factor of Full Wave Rectifier. (6M) (OR) 5. a) Explain the formation of depletion region in an open-circuited PN-junction with neat sketches. ie (6M) ) Write the volt-ampere equation for a p-n diode. Draw and explain the V-I characteristics. Discuss the effect of temperature on these characteristics. (om)UNIT -U1 4, a) Define stability factor and obtain the stability factor of potential divider eireuit (CE). b) Discuss about Thermistor and Sensistor compensation techniques in detail. (OR) 5. a) Compare the performance of a transistor in different configurations. b) What is early effect? How does it modify the V-I characteristics of a BIT? UNIT -IV 8.a) Explain the working principle of Depletion mode MOSFET with the help of Drain and Transfer characteristics. Explain the advantages of MOSFET over JFET. b) Draw and explain basic structure of an n-channel field effect ‘Transistor. Also draw its V-1 characteristics. (OR) 9.a) Define amplification factor of a JFET device and derivethe relation between the three device constants pgm and rd. b) Draw and explain V-1 characteristics of UJT and SCR. (M) (mM) (M) (M) (om) (6M) (6M) (6M)