2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy

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Unit 3 -
Introduction to Fabrication Technolgy

Course
outline Week 3 Assignment 3
Due date for this assignment: 2018-02-14, 23:59 IST.
Introduction to
1) What is the sequence of steps involved in CVD process? 1 point
IC Fabrication
Technology A. Transport of gas species to surface of substrate
B. Reaction of gas precursor with surface
Introduction to C. Deposition of oxide on substrate
IC Fabrication D. Absorption of gas precursor into the surface
Technology E. Removal of unwanted products and excess reactants

Introduction to A, E, B, C, D
Fabrication B, D, C, E. A
Technolgy
A, D, B, C, E
Introduction to B, A, E. D, C
fabrication
technology 2) Which of the following option is true for PECVD? 1 point
A. RF voltage is used to create plasma
Introduction to
fabrication B. Temperature of the PECVD chamber is lesser than LPCVD
technology C. Good step coverage
Contd… D. PECVD is done at atmospheric pressure
Introduction to
A. B, D
fabrication
technology A. C, D
Contd… A, B, C, D
Introduction to A. B, C
fabrication
technology 3) Arrange the following SiO2 layers according to their thickness 1 point
Contd… A. Masking oxide layer
B. Field oxide layer
Quiz : Week 3
Assignment 3
C. Native oxide layer
D. Gate oxide layer
Introduction to
Fabrication A>B>D>C
Technolgy B>A>D>C

Introduction to
A>B>C>D
Fabrication B>A>C>D

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2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy
Technology 4) Why dry oxidation is used for deposition of gate oxide ? 1 point
Contd… A. Easy to deposit
Process Flow B. Less number of defects
for Fabrication C. Precise oxide thickness can be achieved
of MOSFETs D. Higher possibility of dielectric breakdown
Operation of
A, B
Enhancement
Type A, D
MOSFET C, D
Operation of B, C
Depletion
Type 5) In sputtering process, polarity of target is kept _____________ with respect to 1 point
MOSFET substrate and why ?
Quiz : Week 4
Positive, so that electron can detach the atoms from the target
Assignment 4
Positive, so that Ar+ ions can detach the atoms from the target
DOWNLOAD Positive, so that Ar- ions can detach the atoms from the target
VIDEOS
Negative, so that Ar+ ions can detach the atoms from the target

6) Which method is generally preferred for deposition of 2% Si doped aluminium as metal 1 point
contact in IC fabrication?

Thermal evaporation
PECVD
E-beam evaporation
LPCVD

7) Which method can be used for deposition of poly-crystalline-Si in IC fabrication? 1 point

Sputtering
PECVD
E-beam evaporation
LPCVD

8) Conformal deposition of SiO2 in IC fabrication can be done using 1 point

Thermal oxidation
Sputtering
ALD
LPCVD

9) Which metal can be deposited using CVD techniques in IC fabrications? 1 point

Chromium
Zinc
Gold
Tungsten

10)Which of the following metals cannot be deposited using thermal evaporation ? 1 point
A. Tungsten
B. Molybdenum
C. Iron
D. Aluminium

A, C, D
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2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy

B, C, D
A, B, C
A, B, D

11)Why wet oxidation is faster than dry oxidation 1 point

Reaction rate of water vapour is more than oxygen

Absorption of water is faster than oxygen absorption on SiO2 surface
Diffusion of water through oxide is faster than oxygen
None of the above options

12)Which method is used in IC fabrication for deposition of dielectric materials (e.g.: 1 point
SiO2, Si3N4, SiC) ?
A) CVD
B) Sputtering
C) E-beam evaporation
D) Electrode deposition

A, D
A, B
C, D
B, C

13)With increment of temperature, rate of reaction is ? 1 point

Decreased for dry oxidation, increased for wet oxidation

Increased for dry oxidation, increased for wet oxidation
Increased for dry oxidation, decreased for wet oxidation
Decreased for dry oxidation, decreased for wet oxidation

14)What is the typical high frequency used in PECVD ? 1 point

450 MHz
450 KHz
13.56 KHz
13.56 MHz

15)Quartz Crystal Micro-balance is used to 1 point

determine crystal orientation

measure the thickness of grown layer on substrate
as a quartz crystal clock in microcontroller
measure the thickness of deposited layer

You may submit any number of times before the due date. The final submission will be
considered for grading.
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2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy

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