國立彰化師範大學 106 學年度 第二學期 電機二 電子學(二) 第一次平時測驗 題解

1. An NMOS having Vtn  0.5 V , kn W L  0.8 mA V2 and   0 is to be operated in the

saturation region. If iD  250 A , find the required vGS and the minimum vDS . (10 分)
2. For the NMOS in Problem 1, find the values of VOV and VGS required to cause the device to
operate as a 100- resistor for a very small vDS . (10 分)
3. For a particular NMOS having kn  1.0 mA V2 and VA  40 V μm . If L  1.5 m and
W  15 m , find the values of VA , I D , and ro such result the device operating in the
saturation region with an overdrive voltage VOV  1 V and VDS  3 V . (15 分)
4. For the circuit in Fig. 1, find the labeled current and voltage. Assume kn W L  0.5 mA V2 ,
Vt  0.5 V , and   0 . (10 分)
5 V
I1

V2
40 k

5 V
Fig. 1
1
Solutions: I D  k  W L 2V
2 n OV
1.
 1 5 m 
  1 . 0 m 2A  V
1
1
iD  kn W L VOV  VOV  2iD kn W L   12 . 0 V
 1 . 5 m
2
2
2
12  5.0 mA
 2  0.25 mA 
VOV   2 
 0.79 V I D  ID1  VD S V A
 0.8 mA V 
 3 V
vGS  VOV  Vtn  0.79 V  0.5 V  1.29 V   5 . 0 mA 1  5.25 mA
 60 V 
At the edge of the saturation region V 60 V
ro  A   12  k
vDS  vDS  min   VOV  0.79 V I D 5 . 0 m A
2. 4.
1 1
rDS   VGD  5 V Vt 
gDS kn W L VOV NMOS in saturation
V2   5 V 1
VOV  rDS kn W L 
1
I1   kn W L VGS  Vt 
2

40  k 2
 100   0.8 103 A V2   12.5 V
1
1
 kn W L  V2  Vt 
2

2
VGS  VOV  Vtn  12.5 V  0.5 V= 13 V V2   5 V  1
  0.5 mA V2   V2  0.5 V
2
3. 40 k 2
VA  VA  L   40 V μm1.5 m  60 V V2  1.12 V
V2   5 V   1.12 V   5 V 
I1    97 A
40 k 40 k
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