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circuit
SAP16N B
R: 100Ω Typ.
S
D
Emitter resistor
RE: 0.22Ω Typ.
E
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics ( Ta = 25°C ) External Dimensions (Unit: mm)
Symbol Ratings Unit Ratings
Symbol Conditions Unit φ 3.2±0.2
min typ max 15.4±0.3 4.5±0.2
VCBO 160 V 9.9±0.2 1.6±0.2
3.3±0.2
ICBO VCB =160V 100 µA
5±0.2
VCEO 160 V
IEBO VEB = 5V 100 µA
VEBO 5 V
7±0.2
(36°)
2±0.1
VCEO IC = 30mA 160 V
28±0.3
0.3
22±0.3
IC 15 A a
23 ±
hFE ✽ VCE = 4V, IC = 10A 5000 20000
3.4max
b
1±0.1
IB 1 A
VCE (sat) IC = 10A, IB = 10mA 2.0 V
(41)
PC 150( Tc = 25°C) W +0.2
1.35 –0.1
VBE (sat) IC = 10A, IB = 10mA 2.5 V
(18)
+0.2
(2.5)
0.65 –0.1
Di IF 10 mA +0.2
VBE VCE = 20V, IC = 40mA 1190 mV 0.8 –0.1
Tj 150 °C
2.54±0.1 2.54±0.1
+0.2
Di VF IF = 2.5mA 705 mV 0.65 –0.1
Tstg –40 to +150 °C 3.81±0.1
(7.62)
3.81±0.1
RE IE = 1A 0.176 0.22 0.264 Ω (12.7)
IC – VCE Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) IC – VBE Temperature Characteristics (Typical)
(VCE =4V)
15 3 15
Collector-Emitter Saturation Voltage VCE(sat) (V)
A
50mA A 1.5m
0m 1.2mA
5.0mA 2.
3.0mA
1.0mA
Collector Current IC (A)
IC =15A
0.5mA
10A
5 1 5A 5 125°C
IB =0.3mA 25°C
–30°C
0 0 0
0 2 4 6 0.4 1 5 10 50 100 200 0 1 2 2.5
Collector-Emitter Voltage VCE (V) Base Current IB (mA) Base-Emitter Voltage VBE (V)
125°C
Transient Thermal Resistance
1
10000 25°C
–30°C 0.5
5000
1000 0.1
0.3 0.5 1 5 10 15 1 5 10 50 100 500 1000 2000
Collector Current IC (A) Time t (ms)
10
10 m
s
0m
10 s
Forward Current IF (mA)
D.
Collector Current IC (A)
C
W
5
ith
5 100
In
fin
ite
he
ats
in
k
0.5 50
Without Heatsink
Natural Cooling
0.1
Without Heatsink
3.5
0.05 1 0
3 5 10 50 100 200 0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150
Collector-Emitter Voltage VCE (V) Forward Voltage VF ( V ) Ambient Temperature Ta (°C)
169
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