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TYPE BD9893F
FUNCTION 1.1ch control with Push-Pull
2.Lamp current and voltage sense feed back control
3.Sequencing easily achieved with Soft Start Control
4.Short circuit protection with Timer Latch
5.Under Voltage Lock Out
6.Short circuit protection with over voltage
7.Mode-selectable the operating or stand-by mode by stand-by pin
8.BURST mode controlled by PWM and DC input
REV. A
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○Electric Characteristics(Ta=25℃,VCC=7V)
Parameter Symbol Limits Unit Conditions
MIN. TYP. MAX.
((WHOLE DEVICE))
Operating current ICC1 - 8 16 mA
Stand-by current ICC2 - 2 10 μA
((OVER VOLTAGE DETECT))
FB over voltage detect
Vovf 2.20 2.40 2.60 V
voltage
((STAND-BY CONTROL))
System ON
Stand-by voltage H1
VstH1 2.3 - VCC V DUTY pin:0.5V→2.0V
(High Active)
BURST Dimming:100%→0%
System ON
Stand-by voltage H2
VstH2 1.4 - 2.1 V DUTY pin:0.5V→2.0V
(Low Active)
BURST Dimming:0%→100%
Stand-by voltage L VstL -0.3 - 0.8 V System OFF
((TIMER LATCH) )
Timer Latch voltage VSCP 1.9 2.0 2.1 V
Timer Latch current ISCP 0.5 1.0 1.5 μA
((OSC BLOCK) )
Active edge Current Iact 1.25/RT 1.5/RT 1.75/RT A
MAX DUTY MAXDUTY 44 46.4 49 % fOUT=60kHz
Soft start current Iss 1.0 2.0 3.0 μA
IS COMP detect Voltage Visc 0.45 0.50 0.55 V
SS COMP detect voltage Vss 2.0 2.2 2.4 V
SRT ON resistance RSRT - 200 400 Ω
((UVLO BLOCK) )
Operating voltage VuvloH 4.13 4.30 4.47 V
Shut down voltage VuvloL 3.94 4.10 4.26 V
((FEED BACK BLOCK) )
IS threshold voltage Vis 1.225 1.250 1.275 V
VS threshold voltage Vvs 1.220 1.250 1.280 V
IS source current 1 Iis1 - - 1.5 μA DUTY=2.0V
IS source current 2 Iis2 13.0 20.0 27.0 μA DUTY=0V、IS=0.5V
VS source current Ivs - - 1.0 μA
((Output BLOCK))
N1ch output voltage H VoutN1H VCC-0.3 VCC-0.1 V
N2ch output voltage H VoutN2H VCC-0.3 VCC-0.1 - V
N1ch output voltage L VoutN1L - 0.1 0.3 V
N2ch output voltage L VoutN2L - 0.1 0.3 V
N1ch sink resistance RsinkN1 - 4 8 Ω Isink = 10mA
N1ch source resistance RsourceN1 - 7 14 Ω Isource = 10mA
N2ch sink resistance RsinkN2 - 4 8 Ω Isink = 10mA
N2ch source resistance RsourceN2 - 7 14 Ω Isource = 10mA
Drive output frequency FOUT 58.5 60.0 61.5 kHz RT=29.2kΩ
((BURST MODE) )
BOSC Max voltage VburH 1.94 2.0 2.06 V fBCT=0.2kHz
BOSC Min Voltage VburL 0.4 0.5 0.6 V fBCT=0.2kHz
BOSC frequency FBOSC 252.2 260 267.8 Hz BCT=46420pF
((COMP BLOCK) )
Over voltage detect VCOMPH 1.92 2.00 2.08 V
Under voltage detect VCOMPL 0.96 1.00 1.04 V
Hysteresis width ⊿VCOMP - 0.1 0.15 V
(This product is not designed for normal operation with in a radio active environment.)
REV. A
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〇Package Dimensions
Device Mark
(include BURR : 10.35)
BD9893F
Lot No.
SOP16 (unit:mm)
15 N1 FET driver
COMP SCP SRT
16 VCC Supply voltage input
REV. A
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The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended
operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating
5. The GND pin should be the location within ±0.3V compared with the PGND pin
6. The BD9893F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit)
is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee
its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation
7. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need
8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching.
9. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch.
10. By STB voltage, BD9893F are changed to 3 states. Therefore, do not input STB pin voltage between one state and the other
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which
parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin.
(PinA) B
(PinB) E
C
C
GND
N
P+ P P+
N
N N N
P substrate N P substrate
GND GND
Parasitic diode Parasitic diode
(PinB)
(PinA)
B CC
B
Parasitic diode EE
GND
GND
Other adjacent components Parasitic diode
REV. A
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