Académique Documents
Professionnel Documents
Culture Documents
INTRODUCTION
MICROWAVE DEVICES
* Tunnel diodes
These are also known as Esaki diodes. It is a specially made PN
junction device which exhibits negative resistance over part of the forward
bias characteristic. Both the P and the N regions are heavily doped. The
tunneling effect is a majority carrier effect and is very fast. It is useful for
oscillation and amplification purposes. Because of the thin junction and
shot transit time, it is useful for microwave applications in fast switching
circuits.
These microwave solid state devices are used for generation and
amplification of microwave signals by means of velocity-modulation
theory. The interconnection of two or more microwave devices is regarded
as a microwave junction. From the network theory a two-port device can be
described by a number of parameter sets, such as the H, Y, Z and ABCD.
All these network parameters relate total voltages and total currents at each
of the two ports. If the frequencies are in the microwave range, the two port
network representation is as shown in FIG: 1.
The logical variables are traveling waves rather than total voltages
and total currents. These are S-parameters, which are expressed as
b1= S11a1+S12a2
b2= S21a1+S22a2
REF Signal
TorRsignals
External PC
Transmission Reflection
Incident signal
External PC
The calibration circuits can be described with the help of the line
parameter k, a reflection coefficient , and wave parameters(s- parameters)
a1,i, …….a4,i and b1,i,…….b4,i, i=1,2,3 , which are set according to the
setup shown below.
VNA
CALIBRATION
CIRCUITS
MICROWAVE
DEVICE
⎣ ⎦
Line-Reflect-Reflect Technique
⎡b1,i ⎤ ⎡ − ⎤ ⎡ζ l ,i × b2,i ⎤
⎢ ⎥= ⎢⎣G ⎥⎦ ⎢ b ⎥
⎣a1,i ⎦ ⎣ 2 ,i ⎦
⎡ a 4 ,i ⎤ −1 ⎡
b3,i ⎤
⎢ ⎥ = [H ] ⎢ ⎥
⎣b4,i ⎦ ⎣ζ r ,i × b3,i ⎦
⎡ − ⎤ ⎡ K b3,i ⎤
2
⎡ a 4 ,i ⎤
[M 0 ] ⎢ ⎥ = ⎢G ⎥ ⎢ ⎥
b
⎣ ⎦4 , i ⎣ ⎦ ⎢ζ
⎣ r ,i K −2
b3, i ⎥
⎦
Line-Reflect-Reflect Technique
ζl,I = K4 ζ ⇒ Vl,1
ζl,2 = K2 ζ ⇒ Vl,2
ζl,3 = ζ ⇒ Vl,3
ζr,1 = K4 ζ-1 ⇒ Vr,1
ζr,2 = K2 ζ-1 ⇒ Vr,2
ζr,3 = ζ-1 ⇒ Vr,3
((y1-y2)*(y3-y4)) / ((y1-y4)*(y3-y2)) =
((x1-x2)*(x3-x4) / (( x1-x4)*(x3-x2)
The line parameter and the reflection coefficient are thus calculable.
This solution is based on the representation of the obstacle networks show
no transmission.
⎡ | ||
⎤ ⎡ || ||
⎤
b b b − a
[M i ] = ⎢⎢ | || ⎥⎥ | || 1 || |
1, i 1 , i ⎢
⎢
4 , i
| |
4 , i ⎥
⎥
⎢⎣a1,i a1,i ⎥⎦ a 4,i b 4,i − a 4,i b4,i ⎢⎣− b4,i a 4,i ⎥⎦
Where the primes indicate from which side of the setup the generator
signal is fed. By multiplying the measurement matrices with the factor ∆mi,
the pseudo transmission matrices [Qi] result
1 ⎡ μ f ,i μ r , i − ζ ζ⎤
2
⎡−⎤
Q =
⎢⎣ i ⎥⎦ μ ⎢ ⎥
⎢
f ,i ⎣ −ζ 1⎥⎦
MICROSTRIP LINES
ADVANTAGES
¾ Cost effective.
¾ Provides uniform signal paths.
¾ Better interconnection features and easier fabrication.
¾ Miniaturization.
DISADVANTAGES
MERITS
¾ Improved accuracy.
DRAWBACKS
APPLICATIONS
MEASUREMENT COMPARISON
¾ The measurement results are shown next. The plots for both the
magnitude and phase of S-parameters are given.
Line-Reflect-Reflect Technique
CONCLUSION
REFERENCES
[6] www.networkanalyzer.com
CONTENTS
1. INTRODUCTION 1
2. DESCRIPTION OF LRR-TECHNIQUE 7
3. MICROSTRIP LINES 14
3.1 ADVANTAGES 16
3.2 DISADVANTAGES 16
4. MERITS 17
5. DRAWBACKS 17
6. APPLICATIONS 18
7. MEASUREMENT COMPARISION 18
8. CONCLUSION 20
9. REFERENCES 21
Line-Reflect-Reflect Technique
Line-Reflect-Reflect Technique
ABSTRACT
ACKNOWLEDGEMENT
I also thank all the other faculty members of AEI department and my
friends for their help and support.