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4
OF A PV MODULE
2
Maximum Power Point
8
7.5
Current
10 20 30 40 50
5
Voltage
2.5
I-V vs. Temperature
Maximum Power Point
6
10 20 30 40 50
Current
2 60°C 10°C
225 W
Power
10 20 30 40 50
150 W
Voltage
75 W
Changes in light intensity will have greater effect on the
cell output power than changes in temperature. This is
true for all commonly used PV materials. The important 10 20 30 40 50
result of these two effects is that the power of a PV cell
decreases when light intensity decreases and/or Voltage
temperature increases.
The solar microinverter must ensure that the PV module
is operating at the MPP to capture the maximum energy
Maximum Power Point (MPP) from the PV module, at any given time. This is accom-
A solar cell may operate over a wide range of voltages plished by the Maximum Power Point control loop,
and currents. By continuously increasing the resistive known as the Maximum Power Point Tracker (MPPT).
load on an irradiated cell from zero (short-circuit event) Achieving a high percentage of MPP tracking also
to a very high value (open circuit event), the MPP can requires the PV output voltage ripple to be sufficiently
be determined. MPP is the operating point that maxi- small, in order to operate around the Maximum Power
mizes, V x I, and delivers the maximum power at that Point without too much variation in PV current. See the
irradiation. The output power in a short-circuit (PV “Decoupling Capacitors” section for more details on
voltage equals zero) or open circuit (PV current equals limitation of the PV module output voltage ripple. Refer
zero) event is zero. to the “Maximum Power Point (MPP)” section for more
details on implementing MPPT.
A high quality, monocrystalline silicon solar cell, at
25°C cell temperature, may produce 0.60 volts open A common MPP voltage range for PV modules can be
circuit. The temperature on a given cell in full sunlight, defined in the range of 25V to 45V, at a power genera-
with an air temperature of 25°C, may be closer to 45°C tion of approximate 250W, with an open circuit voltage
below 50V.
Galvanic Isolation
Flyback Phase 1
Single-Phase
EMI Filter
Grid
PV Input Flyback Phase 2
(20- 45 VDC)
Decoupling
Capacitors
CT
L,N before EMI
Filter
4/
(1)
Low-Pass Low-Pass Low-Pass Low-Pass
Filter Filter Filter Filter
PV Input Gate Gate
Driver Driver
Grid
Drive Transformer Drive Transformer Optocoupler Current Voltage
(1:1:1) (1:1:1) (4 Channels) Sense Sense TX
Buck Switcher
12V
Gate OP AMP OP AMP
Buck Switcher Driver
PV Voltage (ADC)
5V Flyback Current (ADC)
Flyback Current (ADC) dsPIC33FJ16GS504
LDO Flyback Current (CMP)
Flyback Current (CMP)
3.3V
Communication
Auxiliary Supply Temp 8/
Header
Sensor
Ppv
EQUATION 5: OPERATING HOURS OF
ELECTROLYTIC
CAPACITORS
T
Vpv VOC -------
L hrs = L b M v 2 10
GND_PV
GND_PV
GND_PV
ton
12v
toff Dead Time
VgQ1 On
0.5v
VgQ2
Off On
-11.5v
Clamped Leakage Spike
VPV + Vo/N
VdsQ1
Ipk * N1/N2
I0 * N1/N2
ID1
ILm
*sqrt(L
* sqrt(L * C clamp))
leakage * Cclamp
leakage
ICclamp
ILleakage
t0 t1 t2 t3 t4 t5 t
INTERVAL t5
To leave some margin, a turns ratio of seven was
At instant, t5, the flyback MOSFET Q1 transitions with selected for the 230 VAC systems. The duty cycle can
Zero Voltage Switching. The output diode is reversed be pushed relatively high because the active clamp cir-
biased and the output capacitor supplies the load current. cuit will remove the energy from the core during the
For Zero Voltage Switching (ZVS) to occur, it is impor- OFF time. There is, however, a limit as to how high the
tant that the energy in the inductor when the flyback duty cycle can be since there must be sufficient time for
MOSFET turns off (interval t1) to be greater than the the resonance to occur between the active clamp
energy required to charge Coss of MOSFET Q1, and capacitors and the leakage inductance.
that the body diode of MOSFET Q1 can be forward The selected bobbin and core for the flyback trans-
biased. The energy stored in the inductor and the former are in-lined, 12-pin RM14 bobbin, and standard
energy required to charge Coss can be calculated by size 3C90 core material. The RM core has a better sur-
Equation 8 and where Ipk can be calculated by face area to cross-sectional area, which reduces the
Equation 9. required primary number of turns while still supporting
the large magnetizing inductance. The core material is
EQUATION 8: ENERGY REQUIRED TO a popular choice for this switching frequency.
CHARGE COSS The following describes the transformer construction:
1 • Primary Number of Turns: 6
E inductor = --- I pk 2 L leakage
2 • Turn Ratio: 7
• Core Gap Size: 1.27mm
1 • Primary/Secondary Construction: Litz Wire
E capacitor = --- V cos s 2 C oss
2 • Primary Winding Structure: 4 parallel bundles of
40 gauge, 41 strands
EQUATION 9: IPK • Secondary Winding Structure: 2 parallel bundles
of 40 gauge, 41 strands
P out
---------- 2 I • Effective Window Utilization: 80%
2 L_ripple
Ipk = ---------------------- + ------------------ • Vacuum Varnished in Dolph’s BC-346
V mpp d 2
Figure 10 shows the pinout of the transformer.
GND_PV
GND_PV
TR2 2 TOP_LEFT_DR
R95 C80
INV_DRV1 1 TOP_LEFT_RTN
11R 0.01 µF 5
3 BOT_RGT_DR
6
4 BOT_RGT_RTN
DA2320-ALB
GND_DIG
2 TOP_RGT_DR
TR3
R96 C81
INV_DRV2 1 TOP_RGT_RTN
11R 5
0.01 µF
3 BOT_LEFT_DR
6
4 BOT_LEFT_RTN
DA2320-ALB
GND_DIG
FLY_OUT+
D14 R75 D15 R76
D
G G
D
TOP_LEFT_DR Q2 TOP_RGT_DR Q3
11R MBR0540-TP 11R
MBR0540-TP IPB60R190C6
R77 R78 R79 IPB60R190C6
S
R80
1R C44 10K 1R 10K
C45
0.01 µF 0.01 µF
TOP_LEFT_RTN TOP_RGT_RTN
TP26
R81 U9 R82 U10
OPTO_DRV1 OPTO_DRV2
1
4
270R 270R
3
2
3
2
FOD817DSD FOD817DSD
VinvN VinvL
GND_DIG GND_DIG
D
D
BOT_LEFT_DR G BOT_RGT_DR G
Q4 Q5
MBR0540-TP
11R
IPB60R190C6 MBR0540-TP 11R
R85 R86 IPB60R190C6
S
R87 R88
S
4
1
3
2
FOD817DSD FOD817DSD
GND_DIG GND_DIG
FLY_OUT-
228 kHz
PWM3H // // //
OPTO_DRV1
100/120 Hz
Flyback Output
AC_L
L4 F1 L5
1 2 J4
VinvL 150 µH
C48 C49 RST 6.3 1 L
1
250 VAC 250 VAC 6.3A
2
8
4700 pF L6 4700 pF
C88 C50 C51 MOV1 2 E
0.015 µF S14K275E2
0.015 µF 0.015 µF
350 VAC 350 VAC
1
7
350 VAC 3 N
C52 C53
2
EARTH L7 EARTH F2 L8 EARTH
250 VAC 250 VAC 1 2
VinvN 38720-6303
4700 pF FE2X03-4-3NL 150 µH 4700 pF
RST 6.3
6.3A
IP- 4
IP- 3
IP+ 2
IP+ 1
U14 AC_N
6 FILTER
ACS712ELCTR-05B-T
7 VIOUT
5 GND
8 Vcc
+5V_ANA
C56
C57
0.1 µF
1000 pF
IOUT
GND_ANA GND_ANA
470 pF 470 pF
GND_PV GND_ANA
VinvL 1 5 ZC_INPUT
8
0R 0R R29 27K
1 R30 3
1K R31 DNP R136 D28
2 6 2 IN-
3 7 D29 1.69K BAR43S
27K 0R MCP6022-I/SN R32 C28
4
3.30K 0.1 µF
1
R137 R138 4 8
VinvN GND_ANA
0R 0R DPC-10-90 R36
R139 R140 6.2K GND_ANA
AC_N
DNP DNP
2
4
1
8
C27 R33
GND_ANA R34 8200 pF DNP
100K C29 R35
1.0 uF 2.4K
GND_ANA
GND_ANA
R37
3.30K
GND_ANA
DNP
TP4 TP5 +3.3V_ANA
R46
R47
R48 7.5K FLY_CURRENT1
0R
3.01K
2
D8
GND_ANA 6 IN- U7:2 R49
BAR43S
D9 R50 7 3
FLY1_CT+ 5 IN+
120R R51
3.01K MCP6022-I/SN R52
R53 R54 CDBU0520 DNP C33 10K
DNP 15R C34 R55 8200 pF
1
DNP 7.5K FLY_CURRENT1_CMP
R56
FLY1_CT- R57
0R 10K
GND_ANA GND_ANA
GND_ANA
The selection of the CT depends on the current handling A non-inverting op amp, with a gain of ~3.5, amplifies
capabilities, the number of turns (n) on the secondary of the voltage across the burden resistor into the ADC
the transformer and the external current sense resistor, voltage range.
known as the burden resistor. The current transformer A resistor divider network is added to the output of the
turns ratio and the burden resistor are chosen to mini- flyback current sense for overcurrent protection using
mize the losses seen across the burden resistor. The the on-board analog comparators. This allows maximum
peak power dissipated across the burden resistor can be range on the ADC and will provide quick shutdown of the
calculated by Equation 14. PWM module in the event of an overcurrent condition.
The exact gain of the flyback current sense network is
EQUATION 14: PEAK POWER DISSIPATION provided in Equation 15. The base current for a single
ILM_pk phase is approximately 13.5A.
P loss_pk = ---------------- R54
N TR5
VADC = I----------------
LM_pk R 55 R 46
R 54 – V D9 --------------------------- 1 + ----------
N TR5 R 55 + R 50 R 48
+5V_ANA +3.3V_DIG
C30
GND_ANA
GND_ANA
R97 R98
0.25W 0.25W
150K 240K
R99 R100
0.25W 0.25W
150K 240K
+5V_ANA
R101 R102
0.25W 300K
U15 150K
2
6 C68 R103
7 120 pF 100R
FOD2741BSDV R105 R106
3
30K 5.1K
5
±1%
FLY_OUT-
R108
TP15
20K
FLY_VOLTAGE_CMP ±1%
C90 R109
220 pF 15K
±1%
GND_ANA
This circuit will remain non-operational until the voltage EQUATION 17: MAXIMUM LED FORWARD
rises beyond the set flyback maximum voltage limit. In CURRENT VOLTAGE
order for the optocoupled signal to be enabled, the
V flyback_output
voltage at the reference pin must be 2.5V. Equation 16 I LED = ------------------------------------------------ 866 uA
calculates the required flyback output voltage to R 101 + R 99 + R 97
generate 2.5V on the reference pin.
With 866 µA of current on the primary and a minimum
EQUATION 16: REQUIRED FLYBACK Current Transfer Ratio (CTR) of 100%, the current seen
OUTPUT VOLTAGE on the low voltage or isolated side is also 866 µA. As the
operating temperature of the system can be 65º Celsius,
R 106 a CTR of 60% has been taken to ensure reliability. The
V flyback_output ------------------------------------------------------------------------ >2.5V
R 106 + R 102 + R 100 + R 98 phototransistor collector current will now be calculated
at 520 µA. This current will impact the resistor values
At this time, the LED would become forward biased and for the voltage divider on the isolated side. When the
the current flowing through the circuit is limited by the voltage at Test Point 15 is high (~1.6V), the analog
resistor network, R97, R99 and R101. comparator interrupt is generated and the PWM
outputs are disabled.
The maximum forward current that the LED will carry is
expressed in Equation 17.
GND_PV
1N4148WX-TP
C11
TP13
0.1 µF
+5V_ANA
U3
1
BOOST
5 6 L2
DRV_SUPPLY VIN SW
10 µH R9
4
EN ME3220-223KLB 52.3K
C14 ±1%
C13 3
VFB
GND
MCP16301T-I/CHY 10K
PV- CDBU0520
GND_PV
GND_PV
Interleaved,
Full-Bridge Single-
Single 250W Decoupling Active Clamp EMI
(Unfolding Phase
PV Module Capacitors Flyback Filter
Circuit) Grid
Converter
Auxiliary
PWM1
CMP2
CMP3
PWM2
PWM3
AN0
AN1
CMP4
AN2
AN3
AN6
AN7
AN10
AN11
Power
Signal
Digital Control System
dsPIC33FJ16GS504
F a i t Sw
Un
ult
r
ch d o
• Timer1 Interrupt Service Routine (3.3 Hz)
f
Of
De tched
No nit S
wit cte
ed
tec
i
it S ete
U
Fa wit
• ADC Interrupt Service Routine (56 kHz)
ted Off
ult ch
Un ult D
or
s ~ ed
• Analog Comparator Interrupts
Fa
50 On
0m
s&
FIGURE 24: HIGH-LEVEL SOFTWARE
BLOCK DIAGRAM DAY MODE SYSTEM
START-UP
No Faults Detected &
Full-Bridge Enabled &
Comparator Interrupts Zero Cross Count > 60
Timer2 Interrupts
(Priority: Highest) (Priority: Low)
• Critical Faults • State Machine
• Fault Management
System Error
• MPP Tracking At power-up, the system state is initialized to system
ADC Interrupts • Load Sharing error. If the system does not detect a Fault for 500 ms,
(Priority: High) and the on/off switch is in the ON position, the state
• Phase Lock Loop machine switches to system start-up.
• Compensator User Interface The system state switches to System Error mode if the
• Power Derating/ (Priority: Lowest) on/off switch is switched OFF or if any of the following
Clamp • PLM/Wireless Faults occur:
Comm.
• Grid under/overvoltage
Timer1 Interrupts • Grid under/over frequency
(Priority: Medium) • Flyback MOSFET overcurrent
• LED Fault Indication • Flyback output overvoltage
• Inverter output overcurrent
• PV under/overvoltage
STATE MACHINE
• Overtemperature
The solar microinverter software implements a state
• Drive supply under/overvoltage
machine to determine the mode of operation for the
system. The state machine is executed, once every • Hardware zero cross
100 µs, inside a timer Interrupt Service Routine (ISR). • AC current sense offset
As shown in Figure 25, there are three system states: • 2.5V reference under/overvoltage
System Error, System Start-up and Day mode.
As soon as the system switches to system error, the
PWM drive signals are disabled and placed into a “safe”
state, several global variables/flags are re-initialized and
a timer is initialized to blink an LED for Fault indication.
Full-Bridge Inactive
Turn Off Q2/Q5
Start
inputPower = inputVoltageAverage x
inputCurrenAverage
deltaV = inputVoltageAverage –
prevInputVoltageAverage
Yes
Yes
inputPower > prevInputPower deltaV > 0
No No
Yes
deltaV > 0 mpptFactor + = C mpptFactor – = C
No
mpptFactor – = C
mpptFactor + = C
prevInputPower = inputPower
prevInputVoltageAverage = inputVoltageAverage
Start
burstModeActiveCounter ++
burstModeActiveCounter > 6700
Yes (~1minute) No
Yes
mpptFactor = mpptFactor/2
burstModeActiveFlag = 0
mpptFactor = 3 x mpptFactor
burstModeActiveFlag = 1
burstModeActiveCounter = 0
End
23,000
y = 39530 – (_builtin_mulss(x, 25673)) >> 14);
21,000
220
210
Output Power
200
190
180
170
160
20 21 22 23 24 25 26 27 28 29 30 35 40 45
PV Module Voltage
1V
V pv_Q15 = --------------- 32767 = 584 counts, where 56.1V is the base voltage
56.1 V
The software is written in such a way that the first Flyback overcurrent protection and overvoltage protec-
recorded Fault is stored and displayed via the LED. tion utilize the on-chip analog comparators. In the event
Once that Fault is removed, the system will enter the the flyback overcurrent Fault occurs, the PWM will be
restart period. In the restart period, if another Fault is latched (disables PWM) in approximately 20 ns. This
detected, the system will enter back into system error. should protect the flyback converter and prevent any
There are three system Faults that are treated as a criti- hardware failures. The comparator interrupt will also be
cal Fault: flyback overcurrent, inverter overcurrent and generated to indicate the Fault occurred and to set the
flyback overvoltage. If any of these critical Faults occur, critical Fault flag. If the flyback overvoltage Fault
the system will try a single restart. If the Fault is still pres- occurs, the analog comparator interrupt is generated,
ent during the restart process, the system will shut down the PWM outputs will be disabled using the PWM over-
and a power-down cycle will be required to restart the ride feature and the critical Fault flag will be set. The
system. If the system starts up without detecting a critical comparator interrupts have the highest priority in soft-
Fault, the system resumes as normal. ware to ensure that the PWMs are disabled in a timely
manner.
+ Interleaved
Flyback Phase 1
–
I acref +
+ Current d Load Share Full-Bridge EMI
Δd 0 AC
Compensator Compensator + Unfolding Filter Grid
– + – Circuit
D
Iac Δipv
Vac
+
Feed Interleaved
Vpv Flyback Phase 2
Forward +
Iac
S&H
PLL
Vac
S&H
AsinΘ
Vpv
MPPT
S&H Ipv
ADC Module
VLF
RS + VD - Lf Rf
+
iPV + iM . 1:N
is
iC
iac
.
VLM LM CO AC RLoad
-
VPV
Rp
RON
-
The grid voltage is assumed to be a half-wave, rectified All the quantities (states and inputs) in Equation 25 are
voltage with the same RMS value as the AC grid. This averaged over one switching cycle. The equations
assumption is made for simplifying the analysis of the included in Equation 25 are large signal and exact
flyback converter. (nonlinear) representation of the system. In order to
The flyback converter has the following three states, obtain the transfer functions between the system out-
corresponding to three energy storage elements, that put and the control and disturbance inputs, the system
need to be analyzed: equations are linearized over a chosen operating point.
The solar microinverter system has a wide operating
• Im(s) – Flyback inductor current voltage and current range, as the output swings from
• Vac(s) – Flyback output capacitor voltage zero to peak, over every quarter-sine wave. Since the
• Iac(s) – Output filter inductor current which is fed converter operates at unity power factor, the Rload is a
to the grid representation of the grid load and is given by:
Vgridrms/Iacrms. The operating point is chosen corre-
The averaged Kirchhoff’s Voltage Law and Current Law
sponding to the RMS values of the nominal grid voltage
(KVL and KCL) equations of the converter over one-
and output current at nominal panel peak power
switching cycle are shown in Equation 25; where (d)
voltage. Perturbing all the quantities in Equation 25, the
is the duty cycle or modulation signal and ( d’) is the
following input, state and output vectors are obtained.
off-time (1- d).
The system state vector is provided in Equation 26 and
EQUATION 25: KVL/KCL SYSTEM the system input vector is provided in Equation 27,
where d is the control input and Vgrid and Vpv are the
d(im)
= d*vpv – d*im (Ron + Rp) – d’ vac + im Rs disturbance inputs.
VLM = LM
dt
N
i d v ac i i
c = C o --------------- = s – ac EQUATION 27: SYSTEM INPUT VECTOR
dt
v grid = Rload i ac u = [d vgrid vpv]T
di
ipv = d*imm
~ ~
u = U + u~ = [D vgrid vpv] + [d vgrid v~pv]
~ ~
y = Y + y = Iac + iac
d ĩ m Im v ac Rs D ṽac
ṽ LM = L M ------------- = Dṽ pv + d̃ v pv – Im R on + R p + ----- R s + ------- – D Ron + R p + D ----- ĩ m + -----------
-
dt N N N N
Dĩ m d̃Im
i˜S = ------------ – --------
N N
d ĩ ac
ṽ Lf = L f --------------- = ṽ ac – ĩ ac Rf – ṽ grid
dt
d ṽac D Im
ĩ c = C o --------------- = ------ ĩ m – -----d̃ – ĩ ac
dt N N
ĩ pv = Dĩ m + d̃I m
Lm K*d R Vac Lf Rf
D’: N
1:D iC
iM iac
VPV RLoad
CO
IM*d IM*d/N
d î ac Rf 1 1
-------------- = 0 îm – ----- îac + ----- v̂ ac + 0 d̂ – ----- v̂ grid + 0 v̂ pv
dt Lf Lf Lf
d v̂ ac D 1 Im
--------------- = ----------im – ------ îac + 0 v̂ ac – ----------d̂ + 0 v̂ grid + 0 v̂ pv
dt NC o Co NC o
Im v̂ ac
Where, k = v̂ pv – I m Ron + Rp + ----- Rs + -------
N N
Rs
R = D Ron + Rp + D -----
N
R D
– ------ 0 – ----------- k
· Lm LmN ------
î m îm Lm D 0
------
· Rf 1 Lm 1 v̂
îac = 0 – ----- ---- î ac + 0 d̂ + v̂ pv + – ---- grid
Lf Lf 0 Lf
· Im
v̂ ac D 1 v̂ ac – ---------- 0 0
---------- – ------ 0 NCo
NC o C o
·
X = A X + B 1 U 1 + B 2 U2 + B3 U 3
î m
îac = 0 1 0 îac
v̂ ac
Y = C X
From Equation 34, the output to control transfer function The sampling frequency and the control loop execution
has a right half zero transfer function, which is typical of rate of the system are equal to the switching frequency,
boost and buck-boost topologies. The open-loop bode which is 57 kHz. A PI compensator was chosen to
plot of the system is shown in Figure 35. obtain the required stability margins, gain and band-
In order to obtain the bode plot, the grid voltage has width. Figure 36 shows the bode plot of the system,
been replaced by an equivalent resistive load with the which is provided in Equation 35.
chosen operating point. The load resistance has been
included in the term, Rf, as the filter inductor DCR is in EQUATION 35: SYSTEM TRANSFER
series with the load resistance in the AC-equivalent FUNCTION
circuit. From the open-loop bode plot, it can be OLTF = Gid s Gc s H s
observed that both gain margin and phase margin of
the system are low, thus, the system inherently has a Where Gid(s) is given by Equation 34, H(s) is the trans-
poor relative stability. Additionally, it is also observed fer function of the hardware current sensor filter and
that the switching frequency ripple attenuation needs Gc(s) is the PI compensator transfer function, provided
improvement and that the system gain at the required in Equation 36.
operating frequency (100/120 Hz) is very low.
Therefore, the control objectives are defined as follows:
EQUATION 36: PI COMPENSATOR
TRANSFER FUNCTION
• Gain Margin ≥ 10 dB
Gc s = Gco * 1 + c /s
• Phase Margin ≥ 45 deg.
• Gain at Operating Frequency ~15 dB
• Bandwidth ~1/10th Sampling Frequency
• Switching Frequency Attenuation < -40 dB
50
System: Gid
Frequency (Hz): 120
Magnitude (dB): 8.84
System: Gid
0
Frequency (Hz): 5.7e + 04
Magnitude (dB): -30.1
Magnitude (dB)
-50
-100
-150
360
270
Phase (deg)
180
90
0
2 3 4 5 6 7
10 10 10 10 10 10
Frequency (Hz)
0
System: oltf
Frequency (Hz): 120 System: oltf
Magnitude (dB): 12.9 Frequency (Hz): 5.7e + 04
Magnitude (dB): -59.6
Magnitude (dB)
-50
-100
-150
-200
360
270
180
Phase (deg)
90
-90
2 3 4 5 6 7
10 10 10 10 10 10
Frequency (Hz)
Ipv 1 s = Gd ipv 1 s Xd s The transfer function between ipv and d can be
obtained by modifying the system output in
Equation 32 to y = ipv, where ipv is given in Equation 30,
Ipv 2 (s) = Gd, ipv2(s) X d(s)
and applying Equation 33.
IacRef IacRef d1
d1dash
d2
Iac Iac Vpv
d2dash
d2
iD2
Digital Control d2dash
System
Vo
Probe Station
Interleaved
Flyback Inductor 2
0.04
Ron+Rp
im1
dX(Ron+Rp)xim1
4 1/0.04 ipv1
Vo 1/7
1/N 1/(Ron+Rp)
im1 1
Rs
2
Diode Drop
3
d1dash
Secondary Current or Diode Current
1
iD1
1/7 iD1
im1
Gain3
Product4
ico Vo
1
-K- 1
iD1 s 1
Vo
2 1/Co
iD2
0.05
ESR
Iac
1
Iac
1 1
Vo 1/300e-6 s Iac
2 1/Lf Limit
Vgridabs
Rf
-K-
95.5 3
93.5 2.5
Efficiency
91.5
2
89.5
1.5
87.5
1
85.5
33 66 100
10 20 30 50 75 100
Load Percentage
Load Percentage
20 Vmp 36 Vm 45 Vmp
2
4
1
8
C27 R33
R34 8200 pF DNP
GND_ANA 100K C29 R35
1.0 µF 1.8K
GND_ANA
GND_ANA
R37
3.30K
GND_ANA
R 37 R 28 R 21
V ADC = 2 5 --------------------------- --------------------------- – VU14 1 + ----------
R 37 + R 35 R 28 + R 34 R 20
R97 R98
0.25W 0.25W
150K 240K
R99 R100
0.25W 0.25W
150K 240K
+5V_ANA
R101 R102
0.25W 300K
U15 150K
8
2
6 C68 R103
7 120 pF 100R
30K 5.1K
5
±1%
FLY_OUT-
R108
TP15 20K
±1%
FLY_VOLTAGE_CMP
C90 R109
220 pF 15K
±1%
GND_ANA
VinvL 1 5
8
U6:1 TP22
0R 0R R29 15K C26 0R
1SMA10CAT3G
3 IN+ R30
1K R31 DNP R136 1 3 D28
2 6 2 IN-
3 7 D29 1.69K BAR43S
15K 0R R32 C28
MCP6022-I/SN
4
3.30K 0.1 µF
1
R137 R138 4 8
VinvN GND_ANA
0R 0R
DPC-10-90 R36
R139 R140 6.2K GND_ANA
AC_N
DNP DNP
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
ISBN: 978-1-62076-383-4
QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
== ISO/TS 16949 ==
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.