FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY

Madurai – Sivagangai Main Road

Madurai - 625 020.
[An ISO 9001:2008 Certified Institution]

LECTURE NOTES

EC6401 – ELECTRONIC CIRCUITS - II

SEMESTER: IV / ECE Prepared by: T. SIVA KUMAR AP / ECE.

SYLLABUS

EC6401 ELECTRONIC CIRCUITS II LTPC

3 00 3
OBJECTIVES:
 To understand the advantages and method of analysis of feedback amplifiers.
 To understand the analysis and design of LC and RC oscillators, amplifiers, multivibrators, and
time base generators.

UNIT I FEEDBACK AMPLIFIERS 9

General Feedback Structure – Properties of negative feedback – Basic Feedback Topologies –
Feedback amplifiers – Series – Shunt, Series – Series, Shunt – Shunt and Shunt – Series Feedback –
Determining the Loop Gain – Stability Problem – Nyquist Plot – Effect of feedback on amplifier poles –
Frequency Compensation.

UNIT II OSCILLATORS 9
Classification, Barkhausen Criterion - Mechanism for start of oscillation and stabilization of amplitude,
General form of an Oscillator, Analysis of LC oscillators - Hartley, Colpitts,Clapp, Franklin, Armstrong,
Tuned collector oscillators, RC oscillators - phase shift –Wienbridge - Twin-T Oscillators, Frequency
range of RC and LC Oscillators, Quartz Crystal Construction, Electrical equivalent circuit of Crystal,
Miller and Pierce Crystal oscillators, frequency stability of oscillators.

UNIT III TUNED AMPLIFIERS 9

Coil losses, unloaded and loaded Q of tank circuits, small signal tuned amplifiers - Analysis of
capacitor coupled single tuned amplifier – double tuned amplifier - effect of cascading single tuned
and double tuned amplifiers on bandwidth – Stagger tuned amplifiers – large signal tuned amplifiers –
Class C tuned amplifier – Efficiency and applications of Class C tuned amplifier - Stability of tuned
amplifiers – Neutralization - Hazeltine neutralization method.

UNIT IV WAVE SHAPING AND MULTIVIBRATOR CIRCUITS 9

RC & RL Integrator and Differentiator circuits – Storage, Delay and Calculation of Transistor Switching
Times – Speed-up Capaitor - Diode clippers, Diode comparator - Clampers. Collector coupled and
Emitter coupled Astable multivibrator – Monostable multivibrator - Bistable multivibrators - Triggering
methods for Bigtable multivibrators - Schmitt trigger circuit

UNIT V BLOCKING OSCILLATORS AND TIMEBASE GENERATORS 9

UJT saw tooth waveform generator, Pulse transformers – equivalent circuit – response - applications,
Blocking Oscillator – Free running blocking oscillator - Astable Blocking Oscillators with base timing –
Push-pull Astable blocking oscillator with emitter timing, Frequency control using core saturation,
Triggered blocking oscillator – Monostable blocking oscillator with base timing – Monostable blocking
oscillator with emitter timing, Time base circuits - Voltage-Time base circuit, Current-Time base circuit –
Linearization through adjustment of driving waveform.
TOTAL: 45 PERIODS
TEXT BOOK:
1. Sedra and Smith, “Micro Electronic Circuits”; Sixth Edition, Oxford University Press, 2011.
REFERENCES:
1. Robert L. Boylestad and Louis Nasheresky, “Electronic Devices and Circuit Theory”, 10 th Edition,
Pearson Education / PHI, 2008
2. David A. Bell, “Electronic Devices and Circuits”, Fifth Edition, Oxford University Press, 2008.
3. Millman J. and Taub H., “Pulse Digital and Switching Waveforms”, TMH, 2000.
4. Millman and Halkias. C., Integrated Electronics, TMH, 2007.
Block diagram
UJT

A Unijunction transistor is a three terminal semiconductor switching

device.this device has a unique characteristics that when it is triggered , the emitter
current increases regeneratively until is limited by emitter power supply the
unijunction transistor can be employed in a variety of applications switching pulse
generator saw tooth generator etc.

Construction
 It consists of an N type silicon bar with an electrical connection on each end
the leads to these connection are called base leads. Base 1 B1 Base 2 B2 the bar
between the two bases nearer to B2 than B1. A pn junction is formed between a p type
emitter and Bar.the lead to the junction is called emitter lead E.

Operation

The device has normally B2 positive w.r.t B1

If voltage VBB is applied between B2 and B1 with emitter open. Voltage gradient is
established along the n type bar since emitter is located nearer to B2 more than half of
VBB appears between the emitter and B1. the voltage V1 between emitter and B1
establishes a reverse bias on the pn junction and the emitter current is cut off. A small
leakage current flows from B2 to emitter due to minority carriers

If a positive voltage is applied at the emitter the pn junction will remain reverse
biased so long as the input voltage is less than V1 if the input voltage to the emitter
exceeds V1 the pn junction becomes forward biased. under these conditions holes are
injected from the p type material into the n type bar these holes are repelled by
positive B2 terminal and they are attracted towards B1 terminal of the bar. This
accumulation of holes in the emitter to B1 region results in the degrees of resistance
in this section of the bar the internal voltage drop from emitter to b1 is decreased
hence emitter current Ie increases as more holes are injected a condition of saturation
will eventually be reached at this point a emitter current limited by emitter power
supply only the devices is in on state. If a negative pulse is applied to the emitter, the
pn junction is reverse biased and the emitter current is cut off. The device is said to be
off state.

Characteristics of UJT
The curve between Emitter voltage Ve and emitter current Ie of a UJT at a given
voltage Vbb between the bases this is known as emitter characteristic of UJT Initially
in the cut off region as Ve increases from zero ,slight leakage current flows from
terminal B2 to the emitter the current is due to the minority carriers in the reverse
biased diode . Above a certain value of Ve forward Ie begins to flow , increasing until
the peak voltage Vp and current Ip are reached at point P. After the peak point P an
attempt to increase Ve is followed by a sudden increases in emitter current Ie with
decrease in Ve is a negative resistance portion of the curve The negative portion of the
curve lasts until the valley point V is reached with valley point voltage Vv.and valley
point current Iv after the valley point the device is driven to saturation the difference
Vp-Vv is a measure of a switching efficiency of UJT fall of Vbb decreases

Advantages of UJT

It is a Low cost device

It has excellent characteristics

It is a low-power absorbing device under normal operating conditions

TRANSFORMER EQUIVALENT CIRCUIT:
The influences of a transformer’s parameters can best be understood by considering
the equivalent circuit in below. This circuit shows a typical output pulse waveform.
Assuming that this output pulse is the result of injecting an ideal rectangular input
pulse, one can see that a number of parameters are distorted. Overshoot, droop, back
swing, rise time, etc. appear as unwanted signal distortion on the output pulse.
Assuming the pulse transformer is properly matched and the source is delivering an
ideal rectangular pulse, the transformer should have low values of leakage inductance
and distributed capacitance while having a high open circuit inductance. This will
limit the deterioration of the pulse shape. Also, the fact
that the source will never produce an ideal rectangular pulse adds to the problems of
distortion.