UHF TEC – CT 1 [2015-2016]

Q.1(a) A reflex klystron operates under the following conditions:

Vo=600 V, L=1 mm, Rsh=15kΩ, e/m= 1.759*1011 (MKS system), fr=9GHz

The tube is oscillating at fr at the peak of n=2 or 1*3/4 mode . Assume that the transit time
through the gap and beam loading can be neglected.

A) Find the value of the repeller voltage Vr.

B) Find the direct current necessary to give a microwave gap voltage of 200V.
C) What is the electronic efficiency under this condition.

Ans:- From the given data we have

Vo=600 V,

L=1 mm,

Rsh=15kΩ,

e/m= 1.759*1011 (MKS system) ,

fr=9GHz

Mode of oscillation is n=2

Therefore, for reflex klystron,

 Pin(dc)=Vo*Io=600*10 mA

Pin(dc)=6 W

Now, Pout= Vrms *Irms

Pout=
√ √

As n=2 hence X’J2(X’) at X’=2.408 is 1.25

Pout= =

Pout=1.364 W

Efficiency is given by

ὴ=Pout/pin=1.364/6=0.227=22%

Q.1(b) Explain magnetron and derive an equation for Hull cut-off magnetic flux density and Hull
cut-off voltage.

Ans:- Magnetron is used to generate high microwave power. Magnetrons are M-type devices are
crossed field tubes in which the dc magnetic field and dc electric field are perpendicular to each
other. In this tubes, the dc magnetic field plays a direct role in RF interactions. According to
construction , it is classified as

1) Parallel plate Magnetron

2) Cylindrical Cavity Magnetron
Hull cut-off magnetic field equation

( )

( )

( )

Here

=wc-cyclotron angular frequency

( )

Integrating on both side

( )

At r=a dr/dt=0 c=-1/2 wc a2

( )

( )

( ) ---------------------------(1)

ev=1/2*mv2

V2=Vr2+V 2

V2=(dr/dt)2+(r d )2
At r=b dr/dt=0 V=Vo

Now equation 1 becomes

( )

2eVo/m=b2[1/2*wc(1-a2/b2)]2

B2[1/2*wc*({b2-a2}/b2)]2=2eVo/m

Taking square root on both the side

[ ( )] √

Here Boc is hull cut off magnetic field equation

When
 √

Squaring both the side

This is Hull cut off voltage equation.

Q.2(a) Explain two cavity Klystron amplifier. Derive an equation for velocity modulation.

Ans:-

The above figure shows the schematic diagram of two cavity klystron amplifier.
A two cavity Klystron amplifier consist of a cathode, focusing electrodes, two buncher grids
separated by a very small distance forming a gap of two catcher grids with small gap followed by
a collector.

Construction:- A dc supply Vo is connected between anode and cathode .A heater is used to heat
the cathode. A buncher cavity is connected after the cathode for getting RF signal as an input.
Cather cavity is present before the collector for getting amplified output.

Operation:- When a heater gets heated and cathode is connected to negative terminal of dc
voltage source. Electron beam get emitted in the vaccum tube. All cavities are maintained at
ground potential and hence voltage between cathode and cavity is accelerated the beam of
electron. The electron under the influence of RF signal is given to the input port of buncher
cavity. The region in between of this cavities is called drift region.

The electron beam is set at the center of vaccum tube by applying external magnetic field.
The RF signal is coupled to the input cavity by a magnetic probe. From the first grid the electron
moves towards the second grid of the buncher cavity. The amplitude of RF potential between the
grids of bunching cavity is depend on amplitude of incoming signal. When the RF potential at
grid 2 is positive with respect to 1 the electron gets accelerated. As the number of accelerated
electron is equal to decelerated electron, no energy consume for the cavity. The slow down
electron gives energy to the cavity and speed of electron. A second cavity is located at the place
of maximum bunching. If grid 3 is positive with respect to 4 bunches electron slow down and
gives energy to the output cavity. Output power is depend on kinetic energy of electron before
and after passing the intersection space. The anode collects the remaining electron.

The output is greater than input signal and hence amplification takes place hence klystron
is used as amplifier upto 25GHz.

Equation for velocity modulation

Under equilibrium when static energy is equal to kinetic energy.

Static energy=Kinetic energy

eVo=1/2*m*Vo2

Vo=√ =0.593*106*√ m/s

Vs=V1*sin(wt)

Transient time across the gap of cavity= t1-to

Tg= (V1<<Vo)

Transient angle Өg=w*Tg=w(t1-to)=wd/Vo

But wt1-wto=wd/Vo

Now A=wto+wd/2Vo and B=wd/2Vo

Using

( )

Here beam coupling coefficient ẞi=sin(Өg/2)/Өg/2

Velocity of electron when they are exciting from input cavity is given by,

Using
Therefore ( )

Q.2(b) A helix travelling tube operates at 5.93GHz under a beam voltage of 10KV and beam
current of 500mA. If the helix impedance is 25 ohm and the interaction length is 20cm, find the
output power gain in dB.

Ans:- Given: Vo=10kV, Io=500mA, Zo=25Ω, l=20cm, f=5.93GHz

We know, V=0.593*106*Vo1/2

V=0.598*108 m/s

Also = =13.44

√ √

Output power gain=-9.54+47.3*N*C

Ap =-9.54+47.3*13.44*0.678

Ap =33.56 dB

Q.3 (a) Determine the conductivity of the diode if,

Electron density = 1018 cm-3
Electron density at lower valley = 1010 cm-3
Electron density at upper valley = 108 cm-3
Temperature = 3000 K.
Given Data-
The conductivity is given as

=1.6*10-19(8000*10-4*1016+180*10-4*1014)
=1.6*10-19*8000*10-4*1016 for nl >>nu
=1.28 mmhos.
Q.3(b) Explain two-valley model theory related to Gunn diode.

Solution-

Two valley model theory is also called as Ridley-Watkins Hilsum (RWH) theory. It is based on
population inversion principle.

 Electron densities in the lower and upper valleys remain the same under an equilibrium
conditions. When the applied electric field is lower than the electric field of the lower valley
(E<Ee),no electron will transfer to the upper valley as shown in fig (a).
 When the applied electric field is higher than that of lower valley and lower than that of upper
valley (El<E<Eu), electron will begin to transfer to the upper valley as shown in fig (b).
 When the applied electric field is higher than that of the upper valley (Eu<E), all electron will
transfer to the upper valley as shown in fig (c).
 If the electron density in the upper and lower valley are nl and nu, conductivity of the n-type
GaAs is

Where e=the electron charge

u=the electron mobility
n=nl + nu is the electron density.

Q.4 (a)-Explain Gunn diode characteristics and obtain condition for negative resistance.
• Gunn diodes are negative resistance devices which are normally used as low power
oscillator at microwave frequencies in transmitter and also as local oscillator in receiver
front ends.
• When a dc voltage is applied across the material, an electric field is established across it.
• At low E-field in the material, most of the electrons will be located in the lower energy
central valley Ґ.
• At higher E-field, most of the electrons will be transferred into the high energy satellite L
and X valleys where the effective electron mass is larger and hence electron mobility is
lower than that in the low energy Ґ valley.
 • When the field is in between threshold value Eth and valley value Ev increases in the field
E causes the Vd to decreases due to the onset of transferred electron effect resulting the
negative mobility u. hence an increase in the field the E causes J to decrease resulting in
the manifestation of diffential negative resistance.
• Since the conductivity is directly proportional to mobility, the conductivity and hence the
current decreases with an increase in E-field or voltage in an intermediate range beyond
the threshold value Vth.
• This is called transferred electron effect and the device is also called “Transferred
Electron Device (TED) or Gunn diode.”

Q.4 (b)Explain Properties of high-field domain

Solution:

• A domain will start to form whenever the electric field in a region of the sample increases above
the threshold electric field will drift with the carrier string through the device.when the electric
field increases,electron drift velocity decreases.
• If additional voltage is applied to the device containing a domain, the domain will increase in
size.
• A domain will not disappear before reaching the anode unless the voltage is dropped
appreciably below threshold.
• New domain formation can be prevented by decreasing the voltage slightly below
threshold

• Domain will modulate the current through a device as the domain passes through regions
of different doping and cross-sectional area or domain may disappear.
• The domain length is inversely proportional to the doping.

• Domain can be detected by a capacitive contact,since voltage changes suddenly as the

domain passes.