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Speed TEMPFET

BTS244Z

®
Speed TEMPFET®
N-Channel
Enhancement mode
1
Logic Level Input 1
Analog driving possible
5 PG-TO263-5-2 5 PG-TO220-5-12
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection •Green Product (RoHS Compliant)
Avalanche rated •AEC Qualified

Type VDS RDS(on) Package


BTS244Z E3062A 55 V 13 m PG-TO263-5-2
BTS244Z E3043 PG-TO220-5-12

D Pin 3 and TAB

G Pin 1
A Pin 2

Temperature
Sensor

K Pin 4
S Pin 5

Pin Symbol Function


1 G Gate
2 A Anode Temperature Sensor
3 D Drain
4 K Cathode Temperature Sensor
5 S Source

Data Sheet 1 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage VDS 55 V
Drain-gate voltage, RGS = 20 k V 55
DGR
Gate source voltage VGS 20
Nominal load current (ISO 10483) ID(ISO) A
VGS = 4.5 V, VDS 0.5 V, TC = 85 °C 19
VGS = 10 V, VDS 0.5 V, TC = 85 °C 26
Continuous drain current 1) ID 35
TC = 100 °C, VGS = 4.5V
Pulsed drain current ID puls 188
Avalanche energy, single pulse EAS 1.65 J
ID = 19 A, RGS = 25
Power dissipation Ptot 170 W
TC = 25 °C
Operating temperature 2) Tj -40 ...+175 °C
Peak temperature ( single event ) Tjpeak 200
Storage temperature Tstg -55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56

1current limited by bond wire


2Note: Thermal trip temperature of temperature sensor is below 175°C

Data Sheet 2 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case: RthJC - - 0.88 K/W
Thermal resistance @ min. footprint Rth(JA) - - 62
Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th)
ID = 130 μA 1.2 1.6 2
ID = 250 μA - 1.65 -
Zero gate voltage drain current IDSS μA
VDS = 50 V, VGS = 0 V, Tj = -40 °C - - 0.1
VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 50 V, VGS = 0 V, Tj = 150 °C - - 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100
VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100
Drain-Source on-state resistance RDS(on) m
VGS = 4.5 V, ID = 19 A - 16 18
VGS = 10 V, ID = 19 A - 11.5 13

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.

Data Sheet 3 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Forward transconductance gfs 25 - - S
VDS>2*ID *RDS(on)max , ID = 35 A
Input capacitance Ciss - 2130 2660 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance Coss - 600 750
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss - 320 400
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time td(on) - 15 25 ns
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Rise time tr - 70 105
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Turn-off delay time td(off) - 40 60
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Fall time tf - 25 40
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2

Gate Charge Characteristics


Gate charge at threshold Qg(th) - 2.5 3.8 nC
VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V
Gate charge at 5.0 V Qg(5) - 50 75
VDD = 40 V, ID = 47 A, V GS = 0 to 5 V
Gate charge total Qg(total) - 85 130
VDD = 40 V, ID = 47 A, V GS = 0 to 10 V
Gate plateau voltage V(plateau) - 4.5 - V
VDD = 40 V, ID = 47 A
Data Sheet 4 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Reverse Diode
Inverse diode continuous forward current IS 35 - - A
TC = 25 °C
Inverse diode direct current,pulsed IFM 188 - -
TC = 25 °C
Inverse diode forward voltage VSD - 1.25 1.8 V
VGS = 0 V, IF = 94 A
Reverse recovery time trr - 110 165 ns
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Reverse recovery charge Qrr - 0.23 0.35 μC
VR = 30 V, IF =IS, diF/dt = 100 A/μs

Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/

Forward voltage VAK(on) V


IAK(on) = 5 mA, Tj = -40...+150 °C - 1.3 1.4
IAK(on) = 1.5 mA, Tj = 150 °C - - 0.9
Sensor override - - 10
tP = 100 μs, Tj = -40...+150 °C
Forward current IAK(on) - - 5 mA
Tj = -40...+150 °C
Sensor override - - 600
tP = 100 μs, Tj = -40...+150 °C

Data Sheet 5 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Sensor Characteristics
Temperature sensor leakage current IAK(off) - - 4 μA
Tj = 150 °C
Min. reset pulse duration 1) treset 100 - - μs
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK(Reset)<0.5V
VAK Recovery time1)2) trecovery - - 150
Tj = -40...+150 °C, IAK(on) = 0.3 mA

Characteristics
Holding current, VAK(off) = 5V IAK(hold) mA
Tj = 25 °C 0.05 - 0.5
Tj = 150 °C 0.05 - 0.3
Thermal trip temperature TTS(on) 150 160 170 °C
VTS = 5V
Turn-off time (Pin G+A and K+S connected) toff 0.5 - 2.5 μs
VTS = 5V, ITS(on) = 2 mA
Reset voltage VAK(reset) 0.5 - - V
Tj = -40...+150°C

Sensor recovery behaviour:


S ensor R E S E T

tre s e t
V A K [V ]

5
4

0
t re c o v e ry
S ensor O N R eset OFF

1See diagram Sensor recovery behaviour


2Time after reset pulse until V
AK reaches 4V again

Data Sheet 6 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

1 Maximum allowable power dissipation 2 Drain current


Ptot = f(TC) ID = f(TC ); VGS 4.5V

180 40

140
30

120
Ptot

25

ID
100
20
80

15
60

10
40

20 5

0 0
-40 0 40 80 120 °C 180 0 20 40 60 80 100 120 140 °C 180

TC TC

3 Typ. transient thermal impedance 4 Transient thermal impedance


ZthJA=f(tp ) @ 6 cm2 cooling area ZthJC = f (tp )
Parameter: D=tp /T parameter : D = tp /T
10 2 10 1

K/W
K/W

D=0.5 10 0
1
10
D=0.5
0.2
Z thJC
Z thJA

0.2
0.1
10 -1 0.1
0.05
0.05
10 0
0.02 0.02
0.01 10 -2 0.01

10 -1 Single pulse
10 -3

Single pulse
-2 -4
10 -5 -4 -3 -2 -1 0 1 3
10 -8 -7 -6 -5 -4 -3 -2 -1 0 1 3
10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 10 10 10 s 10

tp tp

Data Sheet 7 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

5 Safe operating area 6 Typ. output characteristic


ID=f(VDS ); D=0.01; TC =25°C ID = f(VDS); Tj =25°C
Parameter: VGS
180

A 10V

7V
140 6V

120
ID

ID
100 5V

80
4.5V

60
4V

40 3.5V

20 3V

0
0 1 2 V 4

VDS

7 On-state resistance 8 On-state resistance


RON = f(Tj ); ID=19A; VGS = 4.5V RON = f(Tj ); ID=19A; VGS = 10V

40 30

m
max. m max.

30
RDS(on)

RDS(on)

typ. 20
25 typ.

20 15

15
10

10

5
5

0 0
-50 -25 0 25 50 75 100 125 °C 175 -50 -25 0 25 50 75 100 125 °C 175

Tj Tj

Data Sheet 8 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

9 Typ. transfer characteristics 10 Typ. input threshold voltage


ID = f(VGS); VDS = 12V; Tj = 25°C VGS(th) = f(Tj); VDS =VGS
Parameter: ID
100 2.4

A V

2.0
80
1.8

VGS(th)
70 130mA
1.6
ID

60 13mA
1.4

50 1.2 1.3mA

40 1.0

0.8 130μA
30
0.6
20
0.4
10
0.2

0 0.0
0 1 2 3 V 5 -50 -25 0 25 50 75 100 125 °C 175
VGS Tj

11 Typ. capacitances 12 Typ. forward charcteristics of


C = f(VDS); VGS =0 V, f=1 MHz reverse diode IF = f(VSD )
tp = 80μs (spread); Parameter: Tj
10 1 10 2

nF 150°C

Ciss 10 1 25°C
IF
C

10 0

Coss
10 0

Crss

10 -1 10 -1
0 4 8 12 16 20 24 28 32 V 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6

VDS VSD

Data Sheet 9 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

13 Typ. gate charge 14 Drain-source break down voltage


VGS = f(QGate); ID puls = 47A V(BR)DSS = f(Tj )

BTS 244 Z
16 66

V V

V(BR)DSS
12 62
VGS

10 0,2 VDS max 60


0,8 VDS max

8 58

6 56

4 54

2 52

0 50
0 20 40 60 80 100 nC 140 -40 0 40 80 120 °C 180
QGate Tj

Data Sheet 10 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Package Outlines

1 Package Outlines

4.4
10 ±0.2
1.27 ±0.1
0...0.3
A B
8.5 1)
1 ±0.3
0.05

2.4

7.55 1)
9.25 ±0.2

1.3 ±0.3
0.1
(15)

2.7 ±0.3
4.7 ±0.5
0...0.15
5 x 0.8 ±0.1 0.5 ±0.1
4 x 1.7
8˚ MAX.
0.25 M A B 0.1 B

1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut. GPT09062

Figure 1 PG-TO263-5-2

10 ±0.2
A
9.9 ±0.2 B
8.5 1) 4.4
3.7 -0.15 1.27 ±0.1

0...0.3
1)
15.65 ±0.3

2.8 ±0.2
12.95
17 ±0.3

0.05
9.25 ±0.2

2.4
11 ±0.5
13 ±0.5

0...0.15 0.5 ±0.1


5 x 0.8 ±0.1 2.4
4 x 1.7
0.25 M A B C

1)
Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.
Figure 2 PG-TO220-5-12

Data Sheet 11 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Package Outlines

Green Product (RoHS compliant)


To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:


http://www.infineon.com/packages. Dimensions in mm

Data Sheet 12 Rev.1.4, 2013-07-26


Speed TEMPFET
BTS244Z

Revision History

2 Revision History

Revision Date Changes


1.4 2013-07-26 page 1, 11: updated package name and package drawing:
PG-TO220-5-62 to PG-TO263-5-2 (SMD)
PG-TO220-5-43 to PG-TO220-5-12 (THD, straight leads);
page 1, 11/12: removed package: PG-TO220-5-3 (THD, staggered leads)
page 1: added sales names for the different packages;
page 8: updated description figure 5
1.3 2009-12-04 updated package drawing of PG-TO220-5-62
1.2 2009-07-31 removed 100ms and DC line in SOA diagram
1.1 2008-11-10 all pages:
added new Infineon logo
Initial version of RoHS-compliant derivate of the BTS244Z
Page 1 and 12: added RoHS compliance statement and Green product feature
Page 1, 11 and 12: Package changed to RoHS compliant version
page 13: added Revision history
page 14: update of disclaimer

Data Sheet 13 Rev.1.4, 2013-07-26


Edition 2013-07-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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