SKM 40GD123D

Absolute Maximum Ratings . 7 84 9*    

#
Symbol Conditions Values Units
IGBT
*: 08;; 
&* . 7 84 =; 9* >; 1; +
&*? . 7 84 =; 9* 
7 0  @; 4; +
A: B 8; 
.C . .2:?+.& D . ' >; EEEF 04; 084 9*
 +* 0  E 84;; 
Inverse diode
SEMITRANSTM 6 &( . 7 84 =; 9* >4 1; +
&(? . 7 84 =; 9* 
7 0  @; 4; +
&( 
7 0; G  EG .C 7 04; 9* 14; +
Sixpack
Characteristics . 7 84 9*    
#
Symbol Conditions min. typ. max. Units
SKM 40GD123D
IGBT
SKM 40GDL123D A:  A: 7 *: &* 7 0 + >4 44 $4 
&*: A: 7 ; *: 7 *: .C 7 84 084 9* ;1 ;/ +
*: . .C 7 84 084 9* 0> 0$ 0$ 0= 
*: A: 7 04  .C 7 84 084 9* >> $; 4$ @$ H
*:  &* 7 84 + A: 7 04  
 84 10 1 1@ 

Features *   #     0$ 80 (

* A: 7 ; *: 7 84  # 7 0 !6 ;84 ;1 (
  
    * ;00 ;04 (
       *: $; !
      ?**IF::I E  '
.7 84 084 9* H
           ** 7 $;;  &* 7 84 + @; 

 
  
 ?A 7 ?A## 7 >; H .C 7 084 9* 44 
 !   
"  #  ## A: 7 B 04  >;; 
   $ % &  # >; 
 '
# : :## 1= 81 J
 ( ) #   *+ 
& 

 "
   Inverse diode
 ( 7 :* &( 7 84 +G A: 7 ; G .C 7 84 084 9* 8 0= 84 
,*- , *

 -  
 . .C 7 084  9* 00 08 
.  . .C 7 084  9* 84 >> H
    /    &?? &( 7 84 +G .C 7 84 084  9* 0/ 84 +

   01  K L 7 4;; +LM 04 >4 M*
: A: 7  J
Typical Applications
Thermal characteristics
  
 

 ? C'
 &A-. ;4$ NLO
 .
   # +* ? C',
 &  , 0 NLO
 
  
? '
  ;;4 NLO
 2 #3   " 04
5!6 Mechanical data
   5 4 > 4 
    
 0@4 

GD GDL

1 23-03-2005 SEN © by SEMIKRON

SKM 40GD123D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

2 23-03-2005 SEN © by SEMIKRON

SKM 40GD123D

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f

Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current

3 23-03-2005 SEN © by SEMIKRON

SKM 40GD123D

Fig. 13 Typ. CAL diode recovered charge

UL Recognized Dimensions in mm
File no. E 63 532

* , $@ A,

* , @1 A,

* , $@

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.

4 23-03-2005 SEN © by SEMIKRON